Abstract: In one embodiment, a method for data transmission is provided comprising determining a set of frequency bands available for data transmission from a plurality of frequency bands; determining whether there is a frequency band of the plurality of frequency bands that lies between two frequency bands of the set of frequency bands and is not in the set of frequency bands; selecting, in case that there is a frequency band of the plurality of frequency bands that lies between two frequency bands of the set of frequency bands and is not in the set of frequency bands, another set of frequency bands from the plurality of frequency bands such that there is no frequency band of the plurality of frequency bands that lies between two frequency bands of the other set and is not in the other set; and transmitting the data using the other set of frequency bands.

Abstract: An apparatus including a sensor configured to sense a physical quantity, an actuator configured to manipulate the physical quantity in a predefined manner, and a detection circuit configured to output an alarm signal in case the sensor does not react to the manipulation of the physical quantity in an expected way.

Abstract: A protection arrangement for a power semiconductor component made of a plurality of cells, in which a current sensor made of a current sense transistor and current sense resistors and also a temperature sensor, is disclosed. The current sense transistor and the temperature sensor are provided in a gap or in different gaps between the cells, while the current sense resistor is fitted directly on at least one cell. The temperature sensor may, include a plurality of stages which are located from the center of the power semiconductor component to an edge of the latter in the gap between two cells.

Abstract: In an embodiment, a method for controlling an output voltage of a power supply system is disclosed. The method includes regulating the power supply to a first voltage. After regulating the power supply to a first voltage, the power supply is regulated to a second voltage, which includes changing an input to the power supply system, and altering charge at an output of the power supply system until the output voltage reaches the second output voltage.

Abstract: Barrier layers for conductive features and methods of formation thereof are disclosed. A first barrier material is deposited on top surfaces of an insulating material, and a second barrier material is deposited on sidewalls of the insulating material, wherein the second barrier material is different than the first barrier material. The first barrier material induces grain growth of a subsequently deposited conductive material at a first rate, and the second barrier material induces grain growth of the conductive material at a second rate, wherein the second rate is slower than the first rate.

Abstract: A component arrangement having an evaluation circuit for detecting wear on connections is disclosed. The component arrangement has the following features: a semiconductor body having at least one semiconductor component which is integrated in the semiconductor body and has at least one first connection zone, a first contact zone which is applied to the semiconductor body and contact-connects the at least one first connection zone in an electrically conductive manner, a contact element which is connected to the contact zone in an electrically conductive manner by means of at least one connection, the at least one contact zone having at least two contact zone sections which are arranged at a distance from one another and are each connected to the contact element in an electrically conductive manner by means of at least one connection, and an evaluation circuit being connected to the two contact zone sections.

Abstract: A method for fabricating a field-effect transistor with local source/drain insulation. The method includes forming and patterning a gate stack with a gate layer and a gate dielectric on a semiconductor substrate; forming source and drain depressions at the gate stack in the semiconductor substrate; forming a depression insulation layer at least in a bottom region of the source and drain depressions; and filling the at least partially insulated source and drain depressions with a filling layer for realizing source and drain regions.

Abstract: The disclosure relates to a system and method for identification of pneumatic drives. The pneumatic actuating drive is controlled by an electro-pneumatic position regulator, which is equipped with a microcontroller, at least one electro-pneumatic transducer for controlling the pressure-medium flow to and from the drive, and a communication interface. After the position regulator has been started up with an initial setting, a nominal value profile and an actual value profile can be analyzed during operation and, if a control error exceeds a predeterminable minimum value, the manipulated variable from the position regulator can be temporarily replaced by a test signal during which operating parameters of the controlled system are recorded from which current regulator parameters are determined.

Abstract: A monitor structure for monitoring a change of a memory content in a memory field of a non-volatile memory comprising a reference transistor in the memory field and a monitor transistor. The monitor transistor and the reference transistor comprise a common floating gate. Moreover, the memory field is arranged in a first well, and the monitor transistor in a second well. The first well and the second well are of different doping types.

Abstract: One embodiment of the present invention relates to a variable capacitor that operates without moving mechanical parts. In this capacitor electrically conductive electrodes are separated by an enclosed chamber filled with an electrically conductive material. The electrically conductive material can freely vary its position within the chamber. The capacitance of the device will vary as position of the conductive material changes due to external mechanical motion (ex: rotation vibration, etc.) of the device. Other embodiments of this device are also disclosed.

Abstract: A circuit for detecting, whether a voltage difference is below a desired voltage difference comprises a voltage shift resistor, a current provider and a detection circuit. The current provider provides a current flowing through the voltage shift resistor such that the desired voltage difference across the voltage shift resistor is determined by a reference signal. The detection circuit is configured to compare a first voltage at a first input with a voltage at a second input to obtain a signal. The voltage shift resistor is coupled between a conductor for a second voltage and the second input, such that the voltage at the second input differs from the second voltage by the desired voltage difference, and wherein the detection circuit is configured to provide the signal, such that the signal indicates, whether the voltage difference between the first and the second voltage is below the desired voltage difference.

Abstract: An integrated circuit arrangement and method of fabricating the integrated circuit arrangement is provided. At least one integrated electronic component is arranged at a main area of a substrate. The component is arranged in the substrate or is isolated from the substrate by an electrically insulating region. Main channels are formed in the substrate and arranged along the main area. Each main channel is completely surrounded by the substrate transversely with respect to a longitudinal axis. Transverse channels are arranged transversely with respect to the main channels. Each transverse channel opens into at least one main channel. More than about ten transverse channels open into a main channel.

Abstract: The present disclosure relates to circuits and methods for improving the performance of a polar modulator by maintaining the input to a phase modulator.

Abstract: A conference communication system including a conference server which provides a conference for a first and a second communication terminal, a notification device which generates a notification message according to a media data transmission control protocol which is used for signaling whether media data sent out by the first communication terminal have been forwarded to the second communication terminal.

Abstract: A power semiconductor component (1) contains a weakly doped drift zone (9), a drain zone (10) and a MOS structure (12) situated at the front side (2) of the power semiconductor component (1). An edge plate (6) of the first conductivity type is provided at its edge (8) above the drift zone (9). The edge plate (6) is doped more highly than the drift zone (9). Situated above the edge plate (6) is an insulation layer (24) with an overlying field plate (7) made of polysilicon. The field plate (7) forms together with the edge plate (6) a plate capacitor structure which increases the drain-source output capacitance of the power semiconductor component (1), so that fewer radiofrequency interference disturbances are caused by the power semiconductor component (1) during switching.

Abstract: The invention relates to a magnetoresistive device formed to sense an externally applied magnetic field, and a related method. The magnetoresistive device includes a magnetoresistive stripe formed over an underlying, metallic layer that is patterned to produce electrically isolated conductive regions over a substrate, such as a silicon substrate. An insulating layer separates the patterned metallic layer from the magnetoresistive stripe. A plurality of conductive vias is formed to couple the isolated regions of the metallic layer to the magnetoresistive stripe. The conductive vias form local short circuits between the magnetoresistive stripe and the isolated regions of the metallic layer to alter the uniformity of a current flow therein, thereby improving the position and angular sensing accuracy of the magnetoresistive device.

Abstract: Structures and methods of forming crack stop trenches are disclosed. The method includes forming active regions disposed in cell regions of a substrate, the cell regions separated by dicing channels, and forming back end of line (BEOL) layers over the substrate, the BEOL layers being formed over the cell regions and the dicing channels. Crack stop trenches are then formed encircling the cell regions by etching a portion of the BEOL layers surrounding the cell regions. The wafer is diced along the dicing channels.

Abstract: A method for fabrication of a monolithically integrated SOI substrate capacitor has the steps of: forming an insulating trench, which reaches down to the insulator and surrounds a region of the monocrystalline silicon of a SOI structure, doping the monocrystalline silicon region, forming an insulating, which can be nitride, layer region on a portion of the monocrystalline silicon region, forming a doped silicon layer region on the insulating layer region, and forming an insulating outside sidewall spacer on the monocrystalline silicon region, where the outside sidewall spacer surrounds the doped silicon layer region to provide an isolation between the doped silicon layer region and exposed portions of the monocrystalline silicon region. The monocrystalline silicon region, the insulating layer region, and the doped silicon layer region constitute a lower electrode, a dielectric, and an upper electrode of the capacitor.

Abstract: Bridge driver circuit with integrated charge pump is disclosed. One embodiment provides a driving circuit section of a charge pump capacitor being formed with power switch components and/or diodes of a bridge circuit section.

Abstract: One embodiment relates to a control system. In one embodiment, a control system is configured to drive a load based on a set-point of the load, a measured load characteristic and a supply voltage of the load. The controller is configured to determine a duty cycle based on the load characteristic, the set-point, and the supply voltage. The controller is further configured to drive the load in response to the duty cycle.