Abstract: A system, apparatus, and method for remotely detecting defects in a structure may proceed non-destructively. A mobile sensing platform may place sensors in a desired positioning relative to the structure. The desired position may include a non-contacting relation between the sensors and structure. The mobile sensing platform may project laser beams onto the structure and sense backscattered light via the sensors. Variations in the backscattered light may correspond to motion of the structure, such as vibrations. By calculating the frequency and amplitude of the vibrations, defects in the structure may be detected. By correcting for noise, such as that associated with acceleration of the mobile sensing platform, accuracy and precision of defect detection may be enhanced.

Abstract: An assembly for saturating or aerating a medium with fluid. At least one hollow cylinder having gates and vents embedded within a grain mass. A target section of grain mass is identified and the gates and vents activated to provide influent flow to the target section in both vertical and horizontal directions.

Abstract: An article of fabric of a generally tubular shape body having an inner skin-facing surface with a generally symmetric inner circumference and an outer-facing surface having a generally non-symmetric outer circumference.

Abstract: A system may perform adaptive target presence probability to predict a location of a user (e.g., target) at a given time based on accumulated observations. For example, the system may track a location of the user over time and generate observation data associated with a user profile. The observation data may include a plurality of observations, with a single observation corresponding to a location and time at which the user was detected. The system may apply a clustering algorithm to the observation data to generate probability distributions (e.g., clusters) associated with discrete locations. For example, the system may group observations that are in proximity to each other and separate the groups based on location. Using the probability distribution for an individual cluster, the system may determine a likelihood that the user is present at a location corresponding to the cluster.

Abstract: A service manages a plurality of virtual machine instances for low latency execution of user codes. The service can provide the capability to execute user code in response to events triggered on an auxillary service to provide implicit and automatic rate matching and scaling between events being triggered on the auxiliary service and the corresponding execution of user code on various virtual machine instances. An auxiliary service may be configured as an event triggering service to detect events and generate event messages for execution of the user codes. The service can request, receive, or poll for event messages directly from the auxiliary service or via an intermediary message service. Event messages can be rapidly converted to requests to execute user code on the service. The time from processing the event message to initiating a request to begin code execution is less than a predetermined duration, for example, 100 ms.

Abstract: A sensing device can include an accelerometer, a transceiver, and a computing device in communication with the accelerometer and transceiver. The computing device can transmit a first set of signals at a first power level to a remote device. The computing device can determine, via the accelerometer, a movement of the sensing device. The computing device can increase a power level for transmission from the first power level to a second power level in response to the movement. The computing device can transmit future signals at the second power level to the remote device.

Abstract: A wireless mobile device in a public communication network receives network-initiated signaling or messaging, while operating in a battery-conserving mode, or modes that, keep(s) minimal baseband processing functions awake. The baseband processing functions process incoming signaling or data in a received message to determine whether to act further on information in the incoming message by enabling additional processing capability in the mobile device. The mobile device may have permanent template criteria values, either coded in firmware or implemented in hardware, or temporary template criteria values, stored in RAM or processor registers, that are compared to values of an incoming message or datagram from the mobile network to determine whether to perform additional actions, such as awakening an application processor.

Abstract: A tonneau cover for covering the opening of a cargo bed of a pickup truck. The tonneau cover includes a sandwich panel including a structural core, a first layered section, and a second layered section. The structural core has a top surface and a bottom surface. The first layered section is coupled to the top surface of the structural core, and a second layered section is coupled to the bottom surface of the structural core. Each of the first and second layered sections includes a reinforcement layer, and at least one of the reinforcement layers of the first and second layered sections is a carbon fiber mat. The tonneau cover may have a single panel configuration or a tri-panel configuration.

Abstract: Disclosed herein is a multilayered tape comprising a first layer; where the first layer comprises a first surface and second surface; the first surface of the first layer having a surface texture; a second layer; the second layer having a first surface and a second surface; where the first surface of the second layer is closer to the second surface of the first layer than the second surface of the second layer; where the second surface of the second layer contains at least one partition that is parallel to a longitudinal direction of the multilayered tape.

Abstract: A gaming machine is programmed to initiate a spin and determine that a first occurrence of a splitting symbol is displayed at a first symbol position on a first reel of the plurality of reels, determine to activate a splitting symbol feature during the spin based at least in part on an output of a random number generator, replace the splitting symbol on the first reel with an activated splitting symbol, activate the splitting symbol feature as one of a first splitting symbol feature and a second splitting symbol feature, the activating includes inserting an additional symbol into one or more symbol positions such that the first symbol position includes only the first occurrence of the splitting symbol, and such that each of the one or more symbol positions includes one of the one or more second occurrences of the splitting symbol and the additional symbol.

Abstract: Power conversion systems and methods to control a multiphase multilevel regenerative power converter with multilevel phase circuits that individually include multiple regenerative power stages with respective power stage outputs connected in series, each of the multiple regenerative power stages comprising a DC link circuit a switching rectifier coupled between a respective transformer secondary circuit and the DC link circuit, and a switching inverter coupled between the DC link circuit and the respective power stage output, including a controller that provides inverter switching control signals to control the respective switching inverters, provides rectifier switching control signals to control the respective switching rectifiers, and controls a non-zero phase relationship between the rectifier switching control signals of the respective switching rectifiers.

Abstract: A method for treating a tumor in a patient by administering to the patient an immunogenic composition including antigenic material inactivated by treatment with a metal-based coordination complex and electromagnetic radiation, wherein the immunogenic composition is effective to elicit an immune response to the antigenic material in the patient after administration and the metal-based coordination complex having a specified formula. An immunogenic composition and a method for preparing it are also disclosed.

Abstract: Aspects of a storage device including a controller are provided which identifies a bad, open block that causes subsequent erase operations to fail in closed blocks due to charge leakage following a previous program operation in the open block. Each time the controller programs an open block, the controller attempts to erase a plurality of closed blocks following each programming of the open block. When the closed blocks fail to erase, the controller determines whether a number of consecutive erase failures after programming the open block meets a threshold, after which the controller re-attempts to erase the closed blocks. After a successful re-attempt, the controller stores a list of open blocks in memory. In response to repeating these steps a number or plurality of times, the controller stores multiple lists of open blocks in memory, and identifies the single common open block between the multiple lists as a bad block.

Abstract: One or more load cells measure the weight of items at a fixture. Weight changes occur as items are picked from or placed to the fixture and may be used to determine when the item was picked or placed, quantity and so forth. Individual weights for a type of item may vary. A set of data comprising weight changes associated with interactions involving a single one of a particular type of item is gathered. These may be weight changes due to picks, places, or both. A model, such as a probability distribution, may be created that relates a particular weight of that type of item to a probability. The model may then be used to process other weight changes and attempt to determine what type of item was involved in an interaction.

Abstract: A semiconductor structure has a first area, a second area and a third area. The second area is arranged between the first area and the third area. The semiconductor structure includes: a substrate; a shallow trench isolation structure arranged in the substrate and configured to isolate the substrate into a plurality of active areas, in which the active areas in the first area form a semiconductor device; a dielectric layer arranged on the substrate; a through hole structure arranged in the third area and penetrating through the dielectric layer and the substrate; and a stress buffer structure arranged in the second area and including a first buffer doped area, in which the first buffer doped area is arranged in the active areas and formed by doping the active areas with a first buffer impurity.

Abstract: A method for forming a memory includes: providing a substrate, a plurality of discrete bit line structures being located on the substrate, and an area surrounded by the adjacent bit line structures and the substrate and having a central axis; forming, on the substrate, a first conductive film filling an area between the adjacent bit line structures; etching the first conductive film by a first etching process to form a first conductive layer; forming a second conductive film on the top surface of the first conductive layer; and etching the second conductive film and the first conductive layer by a second etching process, the remaining second conductive film and the first conductive layer forming a capacitive contact window.

Abstract: An optical proximity correction method includes: obtaining a test mask; obtaining wafer data under current photolithography conditions by the test mask; establishing an optical proximity correction model and a process variation band model by the wafer data; correcting a target pattern according to the optical proximity correction model and the process variation band model to obtain a first correction pattern and a second correction pattern respectively; calculating a difference value between a first simulation contour of the first correction pattern and a second simulation contour of the second correction pattern; and adjusting a correction mode for the target pattern according to the difference value.

Abstract: A semiconductor memory training method includes: selecting two adjacent reference voltages from a plurality of reference voltages as a first reference voltage and a second reference voltage; obtaining a first minimum margin value for the plurality of target signal lines under the first reference voltage; obtaining a second minimum margin value for the plurality of target signal lines under the second reference voltage, according to a minimum margin value for each target signal line under the second reference voltage; determining a target interval for an expected margin value according to the first minimum margin value and the second minimum margin value, the expected margin value being the maximum one among the minimum margin values for the plurality of target signal lines under the plurality of reference voltages; and searching for the expected margin value in the target interval.

Abstract: The present invention relates to a semiconductor structure and a method for forming the same, and a memory and a method for forming the same. The method for forming the semiconductor structure includes: providing a substrate on which a sacrificial layer and an active layer located on the sacrificial layer are formed; patterning the active layer to form several discrete active pillars; removing the sacrificial layer to form a gap; forming a bit line within the gap; and forming a semiconductor pillar on the top of the active pillar. The above method can reduce the planar size of the transistor and increase the storage density of the memory.

Abstract: A semiconductor device includes a substrate, a gate oxide layer, a gate electrode and an injection region. The substrate includes a trench, a source region, a drain region and a channel region. The trench includes trench sidewalls and a trench bottom wall. The gate oxide layer is disposed in the trench. The gate oxide layer includes a groove. The gate electrode is disposed in the groove. The injection region is located on at least a side of the trench bottom wall, and at least a part of the injection region is closer to the drain region than the source region so that a threshold voltage at a portion of the channel region close to the injection region is less than a threshold voltage at a portion of the channel region far from the injection region.