Abstract: A substrate processing method for removing liquid on a substrate having an uneven pattern formed on a surface of the substrate and drying the substrate. The substrate processing method includes: forming a laminate having a two-layer structure including a first material in a solid state forming a lower layer and a second material in a solid state forming an upper layer, in a concave portion of the pattern; removing the second material from the concave portion by performing at least one of a heating process, a light-emitting process, and a reaction process using gas with respect to the second material to sublimate, decompose, and gas-react the second material; and removing the first material from the concave portion by performing at least one of the heating process, the light-emitting process, and the reaction process using gas with respect to the first material to sublimate, decompose, and gas-react the first material.

Abstract: A liquid processing apparatus includes a heating member, a substrate holder, a processing liquid supply and a coil. The heating member is disposed adjacent to a portion of a substrate and has an insulating member. The substrate holder is configured to hold the substrate. The processing liquid supply is configured to supply a processing liquid onto the substrate held by the substrate holder. The coil is configured to heat the heating member inductively to heat the portion of the substrate.

Abstract: A substrate processing apparatus includes a substrate holder configured to hold a substrate, a rotary driver configured to rotate the substrate holder around a rotation axis, a processing liquid nozzle configured to eject a processing liquid toward a peripheral portion of the substrate, and a gas nozzle configured to eject a gas toward the processing liquid from a time at which the processing liquid is ejected from an ejection port of the processing liquid nozzle until a time at which the processing liquid arrives at a liquid arrival point on the substrate.

Abstract: A measurement part controls power supplied to a heater such that a temperature of the heater becomes constant by using a heater controller, and measures the supplied power in an unignited state in which plasma is not ignited and a transient state in which the power supplied to the heater decreases after plasma is ignited. A parameter calculator performs fitting on a calculation model, which includes a heat input amount from the plasma as a parameter, for calculating the power supplied in the transient state by using the power supplied in the unignited state and the transient state and measured by the measurement part, and calculates the heat input amount. An output part configured to output information based on the heat input amount calculated by the parameter calculator.

Abstract: There is provided a focus ring that is capable of preventing deposits from adhering to a member having a lower temperature in a gap between two members having different temperatures. A focus ring 25 is disposed to surround a peripheral portion of a wafer W in a chamber 11 of a substrate processing apparatus 10. The focus ring 25 includes an inner focus ring 25a and an outer focus ring 25b. Here, the inner focus ring 25a is placed adjacent to the wafer W and configured to be cooled; and the outer focus ring 25b is placed so as to surround the inner focus ring 25a and configured not to be cooled. Further, a block member 25c is provided in a gap between the inner focus ring 25a and the outer focus ring 25b.

Abstract: The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.

Abstract: An execution device according to an exemplary embodiment includes an operation device, an acceleration sensor, and an arithmetic device. The operation device is a device for executing a predetermined operation. The acceleration sensor measures acceleration applied to the execution device. The arithmetic device measures an elapsed time after the acceleration measured by the acceleration sensor becomes a value within a reference range, and when a predetermined time elapses while the acceleration remains a value within the reference range, causes the operation device to execute the predetermined operation.

Abstract: An inspection apparatus for a substrate, comprising: a placing member on which a substrate is placed; a holder configured to hold a probe card having probes; positioning members to be in contact with an upper surface of the placing member to define a height of the placing member with respect to the probes; an adjustment mechanism configured to adjust heights of the positioning members; a detection device; and a control. The controller is configured to execute: positioning the positioning member to a reference height at which an overdrive amount becomes zero, based on the detection results of the probes, the placing member, and the positioning member; and acquiring a height of the positioning member at which a desired overdrive amount is obtained, and raising the placing member while adjusting a driving amount of the adjustment mechanism until the placing member reaches the height.

Abstract: A plasma processing apparatus includes: a chamber; a substrate support including a lower electrode; an upper electrode disposed above the substrate support; a first RF power supply that is electrically connected to the upper electrode and generates a first RF signal, in which the first RF signal has a first power level during a first state within a repeating period and a zero power level during second to fourth states within the repeating period; a second RF power supply that is electrically connected to the lower electrode and generates a second RF signal, in which the second RF signal has a zero power level during the first and second states, a second power level during the third state, and a third power level during the fourth state; and a DC power supply that is electrically connected to the upper electrode and generates a DC signal.

Abstract: A plasma processing apparatus includes a substrate support. The substrate support includes a base, an electrostatic chuck, a chuck electrode, and an electrode structure. The electrostatic chuck is disposed on the base and has a central region and an annular region. The chuck electrode is disposed in the central region. The electrode structure is disposed below the chuck electrode in the central region and is placed in an electrically floating state. The electrode structure includes a first electrode layer, a second electrode layer disposed below the first electrode layer, and one or more connectors that connect the first electrode layer and the second electrode layer. At least one bias power supply is electrically coupled to the substrate support.

Abstract: In a plasma processing apparatus, a mounting table includes a heater for adjusting a temperature of a mounting surface mounting thereon a consumable part consumed by plasma processing. A heater control unit controls a supply power to the heater such that the heater reaches a setting temperature. A measurement unit measures, while controlling the supply power to the heater such that the temperature of the heater becomes constant, the supply powers in a non-ignition state where plasma is not ignited and in a transient state where the supply power is decreased after the plasma is ignited. A parameter calculation unit calculates a thickness of the consumable part by performing fitting with a calculation model, which has the thickness of the consumable part as a parameter and calculates the supply power in the transient state, by using the measured supply powers in the non-ignition state and in the transient state.

Abstract: A cleaning method according to the present disclosure includes a first cleaning operation and a second cleaning operation, wherein the first cleaning operation includes: supplying a first processing gas to the interior of the chamber; and cleaning a region including the placement region of the stage by generating a first plasma from the first processing gas in a space defined by the placement region and the electrode, and the second cleaning operation includes: holding a dummy substrate at a predetermined position spaced by a predetermined distance from the placement region to face the placement region; supplying a second processing gas to the interior of the chamber; and cleaning a region including a periphery of the placement region of the stage by generating a second plasma from the second processing gas in a space defined by the dummy substrate held at the predetermined position and the electrode.

Abstract: A control method includes: calculating a correction value after a predetermined process is executed; and controlling a control target based on an output value of at least one of a real sensor and a virtual sensor during execution of the predetermined process. The calculating includes correcting an output value of the virtual sensor. The controlling includes: controlling the control target based on an output value of the real sensor while monitoring a failure of the real sensor; correcting an output value of the virtual sensor with the correction value when the real sensor fails; and switching from a control based on the output value of the real sensor to a control based on the output value of the virtual sensor after the correcting the output value of the virtual sensor.

Abstract: A heat treatment apparatus according to one aspect of the present disclosure includes a vertically long process chamber, a heater configured to heat the process chamber, and a cooler configured to cool the process chamber. The cooler includes a plurality of discharge holes provided at intervals along a longitudinal direction of the process chamber to discharge cooling fluid toward the process chamber and a plurality of shutters provided corresponding to the plurality of discharge holes. At least one of the plurality of shutters is configured to move to an open position independently of other shutters.

Abstract: An abnormality detection apparatus is provided. The abnormality detection apparatus includes a first generation part configured to generate pseudo-abnormal image data by synthesizing a substantially circular image at a random position of an image of normal image data obtained by photographing equipment that includes a liquid supply and supplies a liquid from the liquid supply without an abnormality, a second generation part configured to generate a determination model for determining whether the equipment is normal or abnormal by performing learning of the normal image data and the pseudo-abnormal image data, an acquisition part configured to acquire image data obtained by photographing the equipment, and a detection part configured detect an abnormality in the equipment from the image data acquired by the acquisition part using the determination model.

Abstract: A technique allows control of the etching rate at an outer periphery of a substrate being processed. A substrate support includes a substrate support portion that supports a substrate, and an edge ring support that supports an edge ring surrounding the substrate supported on the substrate support portion. The edge ring support includes a plurality of heating elements arranged in a circumferential direction of the edge ring support and a plurality of heater power feeders. Each of the plurality of heater power feeders is included in a corresponding heating element of the plurality of heating elements to provide power from an external source to the corresponding heating element.

Abstract: A substrate processing system configured to process a substrate includes a carry-in/out unit configured to carry the substrate from/to an outside thereof; a processing unit configured to process a processing surface of the substrate; a cleaning unit provided between the carry-in/out unit and the processing unit when viewed from a top, and configured to clean the processing surface after being processed in the processing unit; a first transfer unit stacked on top of the cleaning unit, and configured to transfer the substrate; and a second transfer unit provided between the processing unit and the first transfer unit when viewed from the top, and configured to transfer the substrate. The first transfer unit transfers the substrate between the carry-in/out unit and the second transfer unit. The second transfer unit transfers the substrate between the first transfer unit and the processing unit and between the processing unit and the cleaning unit.

Abstract: This inspection apparatus is for inspecting an inspection subject device. The inspection subject device is formed on an object to be inspected, and is a reverse-side irradiation-type imaging device into which light enters from the reverse side opposite to the side where a wiring layer is provided. This inspection apparatus has: a placement table having a transparent surface on which the object to be inspected is placed; a light irradiation mechanism that is provided in the placement table and that irradiates the to-be-inspected object placed on the placement table with light through the placement surface; and an acquisition unit that acquires in-plane distribution of illuminance of light from the placement table.

Abstract: A plasma processing apparatus capable of improving the in-plane uniformity of plasma and a lower stage used for the plasma processing apparatus are anticipated. In an exemplary embodiment, the lower stage is for a lower stage that generates plasma with an upper electrode. The lower stage includes: a lower dielectric body formed of ceramic, a lower electrode embedded in the lower dielectric body, and a heating element embedded in the lower dielectric body. The separation distance between the top surface of the lower dielectric body at the outer edge position thereof and the lower electrode is smaller than the separation distance between the top surface of the lower dielectric body in the central region thereof and the lower electrode. The lower electrode has an inclination region inclined with respect to the top surface between the outer edge position and the central region.

Abstract: A cleaning method for removing a silicon-containing film deposited in a temperature-adjustable process container by a heater and a cooler includes: stabilizing a temperature in the process container to a cleaning temperature; and removing the silicon-containing film by supplying a cleaning gas into the process container stabilized at the cleaning temperature; wherein in the removing the silicon-containing film, a heating capability of the heater and a cooling capability of the cooler are controlled based on the temperature in the process container.