Abstract: A method MT according to an embodiment provides a technique capable of controlling a pattern shape during processing of an organic film and the like. A wafer W as an object to which the method MT in the embodiment is applied includes an etching target layer EL, an organic film OL, and a mask ALM, the organic film OL is constituted by a first region VL1 and a second region VL2, the mask ALM is provided on the first region VL1, the first region VL1 is provided on the second region VL2, and the second region VL2 is provided on the etching target layer EL. In the method MT, the first region VL1 is etched to reach the second region VL2 by generating a plasma of a gas containing nitrogen gas in the processing container 12 in which the wafer W is accommodated, a mask OLM1 is formed from the first region VL1, a protective film SX is conformally formed on a side surface SF of the mask OLM1, the second region VL2 is etched to reach the etching target layer EL to form a mask OLM2 from the second region VL2.
July 4, 2017
Date of Patent:
June 23, 2020
TOKYO ELECTRON LIMITED
Shinya Morikita, Takanori Banse, Yuta Seya, Ryosuke Niitsuma
Abstract: In one embodiment, a vaporizer is connected to a chamber of a substrate processing apparatus through a gas supply line and a gas introduction port. An exhaust device is connected to the gas supply line. The substrate processing apparatus includes a pressure sensor that obtains a measurement value of a pressure of the gas supply line. A method according to the embodiment includes supplying a processing gas to the chamber from the vaporizer through the gas supply line, and monitoring a change of the measurement value obtained by the pressure sensor in a state in which supply of the processing gas to the gas supply line is stopped.
Abstract: In one embodiment, a gas supply line is connected to a chamber of a substrate processing apparatus. A vaporizer is connected to the gas supply line. A flow rate controller is connected to the gas supply line in parallel with the vaporizer through a secondary valve. A primary valve is provided on a primary side of the flow rate controller. A method of the embodiment includes supplying a processing gas to the chamber from the vaporizer through the gas supply line in a state in which the primary valve is closed, the secondary valve is opened, and an exhaust device is operated to set a pressure of the chamber to a predetermined pressure and determining a time-average value of a measurement value obtained by a pressure sensor of the flow rate controller while the supplying the processing gas is performed.
Abstract: A substrate processing apparatus according to an exemplary embodiment to the present disclosure includes: a main body which has therein a processing space capable of accommodating the substrate; a holding unit which holds the substrate in the main body; a supply unit which is provided at a side of the substrate held by the holding unit and supplies the processing fluid into the processing space; a discharge unit which discharges the processing fluid from an inside of the processing space; and a flow path limiting unit which limits a lower end of a flow path at an upstream side which is formed while the processing fluid flows from the supply unit to the discharge unit. Further, an upper end of the flow path limiting unit is disposed at a position higher than the upper surface of the substrate held by the holding unit.
Abstract: A film forming apparatus includes a rotation shaft which is connected to a rotation stage. The rotation stage is accommodated in an inner space of a susceptor, holds a plurality of workpieces, and rotates the workpieces around the central axis. A gas flow along a direction orthogonal to the central axis from an outside of the rotation stage is formed in the susceptor. A wall portion of the susceptor facing a lower surface of the rotation stage includes an intermediate area defined by a first circle larger than a minimum distance between the central axis and the plurality of placing areas and a second circle smaller than a maximum distance between the central axis and the plurality of placing areas. One or more of through holes are formed in the intermediate area.
Abstract: An etching process method is provided that includes outputting a first high frequency power from a first high frequency power supply in a cryogenic temperature environment where the temperature of a substrate is controlled to be less than or equal to ?35° C., supplying a sulfur fluoride-containing gas and a hydrogen-containing gas, generating a plasma from the supplied sulfur fluoride-containing gas and hydrogen-containing gas, and etching a laminated film made up of laminated layers of silicon-containing films having different compositions with the generated plasma.
Abstract: A plasma processing method performed using a plasma processing apparatus includes a first step of forming a first film on a pattern formed on a substrate and having dense and coarse areas, and a second step of performing sputtering or etching on the first film.
Abstract: A substrate processing method includes: providing a substrate having a pattern formed on a surface layer thereof; setting a temperature of the substrate such that a change in the pattern becomes a predetermined change amount; forming a reaction layer having a thickness corresponding to the temperature set in the setting on the surface layer of the substrate; and applying energy to the substrate formed with the reaction layer thereby removing the reaction layer from the surface layer of the substrate.
Abstract: A power feed structure includes a first connecting member group and a ring-shaped first terminal member. The first connecting member group includes a plurality of first connecting members arranged along a circumferential direction of a focus ring disposed in a processing chamber of a plasma processing apparatus to apply a bias potential to the focus ring. The ring-shaped first terminal member is electrically connected to the first connecting members.
Abstract: A system of processing a substrate includes an atmospheric-pressure transfer chamber, at least one vacuum processing chamber, at least two load-lock modules, a vacuum transfer chamber, a plurality of load ports, and a first transfer mechanism and a second transfer mechanism. The load ports are attached to the atmospheric-pressure transfer chamber and detachable containers are mounted on the load ports, respectively. A controller controls the first transfer mechanism and the second transfer mechanism to concurrently transfer a used consumable from the containers to the vacuum processing chamber through the atmospheric-pressure transfer chamber and one of the load-lock modules and to transfer a used consumable from the vacuum processing chamber through the vacuum transfer chamber and another one of the load-lock modules.
Abstract: A transfer method according to an exemplary embodiment includes: transferring a focus ring onto a stage by a transfer unit; transferring a measuring instrument into an inner region of the transferred focus ring and onto an electrostatic chuck; acquiring a measurement value group by the transferred measuring instrument; and adjusting a transfer position of the focus ring by the transfer unit such that the central position of the electrostatic chuck and the central position of the focus ring coincide with each other based on the measurement value group.
Abstract: There is provided a plasma processing apparatus, including: a chamber main body; a plasma trap installed inside a chamber provided by the chamber main body, and configured to divide the chamber into a first space and a second space; a mounting table installed in the second space; a plasma source configured to excite gases supplied to the first space; and a potential adjustment part including an electrode to be capacitively coupled to a plasma generated in the first space, and configured to adjust a potential of the plasma.
Abstract: The substrate processing method according to an exemplary embodiment includes a low temperature dissolving processing and an etching processing. The low temperature dissolving processing dissolves oxygen in an alkaline aqueous solution cooled to a predetermined temperature lower than the room temperature. The etching processing etches a substrate by supplying the alkaline aqueous solution in which oxygen is dissolved to the substrate.
Abstract: A film forming apparatus of forming a film by supplying a process gas onto a substrate includes a rotation table having a loading region and is configured to revolve the substrate loaded on the loading region; a process gas supply mechanism configured to supply the process gas to a gas supply region to perform film formation on the substrate repeatedly passing through the gas supply region a plurality of times by revolution of the substrate; a first gear disposed on the other surface side of the rotation table and rotated in a rotation direction of the rotation table; a second gear configured with planetary gears engaging with the first gear, disposed to be revolved together with the loading region, and configured to rotate the loading region so as to allow the substrate to be rotated.
Abstract: A method MT includes etching a wafer W using plasma generated in a processing container. The etching includes a process of inclining and rotating a holding structure holding the wafer W during execution of the etching and the process successively creating a plurality of inclined rotation states RT(?, t) with respect to the holding structure. In the inclined rotation states, the wafer W is rotated about a central axis of the wafer W over a predetermined process time while maintaining a state where the central axis is inclined with respect to a reference axis of the processing container which is in the same plane as the central axis. A combination of a value ? of an inclination angle AN of the central axis with respect to the reference axis and the process time t differs for each of the plurality of inclined rotation states.
Abstract: A method of manufacturing a semiconductor device includes: providing a substrate having a base fin structure thereon, the base fin structure including a first stacked portion for forming a channel of a first gate-all-around (GAA) transistor, the first stacked portion including a first channel material, a second stacked portion for forming a channel of a second GAA transistor, the second stacked portion including second channel material, and a sacrificial portion separating the first stack portion from the second stack portion, wherein the first channel material, the second channel material and the sacrificial material have different chemical compositions from each other; exposing the side of the base fin structure to an isotropic etch process which selectively etches one of the first channel material, the second channel material and the sacrificial material; and forming first and second GAA gate structures around said first channel material and said second channel material respectively.
Abstract: Provided is a nozzle system for dispensing a dispense chemical onto a substrate, the system comprising: a nozzle comprising a nozzle body and a nozzle tip; a shielding device coupled to the nozzle tip, the shielding device configured to create a mini-environment for a dispense chemical such that a partial pressure of the dispense chemical is maintained in the shielding device; wherein the nozzle system is configured to meet selected dispense objectives.
Abstract: In a substrate support according to one exemplary embodiment, an adhesive is provided between an upper surface of a base and a lower surface of the electrostatic chuck. The base, the adhesive, and the electrostatic chuck provide a supply path for supplying a heat transfer gas between the electrostatic chuck and a substrate. The upper surface of the base defines one or more grooves. The one or more grooves are further away from a center of the upper surface than the supply path. The adhesive is provided to cover an upper end opening of each of the one or more grooves. The heat transfer gas is capable of being supplied to the one or more grooves via the supply path or a different flow path. The substrate support further includes a pressure sensor to measure pressure in the one or more grooves.
Abstract: A substrate support is provided in a chamber of a plasma processing apparatus according to an exemplary embodiment. The substrate support has a lower electrode and an electrostatic chuck. A matching circuit is connected between a power source and the lower electrode. A first electrical path connects the matching circuit and the lower electrode to each other. A second electrical path different from the lower electrode is provided to supply electric power from the matching circuit to a focus ring. A sheath adjuster is configured to adjust a position of an upper end of a sheath on/above the focus ring. A variable impedance circuit is provided on the first or second electrical path.
Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a container body, and a holding member that conveys the substrate from an outside of the container body into the container body and holds the substrate inside the container body during the processing. A substrate support pin supporting a wafer and a cooling plate cooling the holding member are provided outside the container body.