Abstract: An etching method includes: (a) providing a substrate including a base film and a mask having an opening and formed on the base film; (b) etching the base film using plasma; and (c) supplying hydrogen fluoride to the substrate under a pressure of 13.3 Pa or higher.

Abstract: This substrate transfer system is provided with: a load-lock module; an atmospheric transfer module having a first sidewall, a second sidewall and a third sidewall, the first sidewall extending along a first direction and connected to the load-lock module, the second sidewall extending along a second direction perpendicular to the first direction, the third sidewall being disposed on an opposite side of the second sidewall; a first load port extending outward from the second sidewall along the first direction; and a second load port extending outward from the third sidewall along the first direction.

Abstract: A base disposed in a plasma processing chamber. An electrostatic chuck disposed on an upper portion of the base, the electrostatic chuck including a first part and a second part. A first heater electrode layer group including at least one heater electrode layer disposed in the first part. A second heater electrode layer group including at least one heater electrode layer disposed in the second part. A power source is electrically connected to the first heater electrode layer group and the second heater electrode layer group. A controller configured to periodically and sequentially supply DC current from the power source to heater electrode layers included in the first heater electrode layer group and heater electrode layers included in the second heater electrode layer group.

Abstract: A substrate processing apparatus includes: a chamber; a substrate support disposed in the chamber; a plasma generator configured to form a plasma in the chamber; and a controller configured to perform a process including: placing a substrate on the substrate support, the substrate including a first film, a second film and a third film, the first film containing a silicon, the second film having a second aperture, the first film being disposed between the second film and the third film; cooling the substrate to ?30° C. or less; etching the first film through the second aperture with a plasma formed from a first process gas containing a fluorocarbon gas, to form a first aperture of a tapered shape in the first film such that a width of the first aperture gradually decreases toward a bottom of the first aperture; and etching the third film through the first aperture.

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract: A deposition method of forming silicon oxide films collectively on a plurality of substrates in a processing container performs a plurality of execution cycles each of which includes: supplying a silicon material gas containing an organoamino-functionalized oligosiloxane compound into the processing container; and supplying an oxidizing gas into the processing container adjusted to a pressure of 1 Torr to 10 Torr (133 Pa to 1333 Pa).

Abstract: A substrate processing apparatus includes a supply channel through which a liquid to be supplied to a substrate flows; and a foreign substance detecting unit configured to detect a foreign substance in the liquid based on a signal obtained when light, which is near-infrared light, is radiated toward a flow path forming unit constituting a part of the supply channel by a light projector so that light is emitted from the flow path forming unit and a light receiver receives the light emitted from the flow path forming unit.

Abstract: Methods are provided herein for improving oxygen content control in a Metal-Insulator-Metal (MIM) stack of an RERAM cell, while also maintaining throughput. More specifically, a single chamber solution is provided herein for etching and encapsulating the MIM stack of an RERAM cell to control the oxygen content in the memory cell dielectric of the RERAM cell. According to one embodiment, a non-oxygen-containing dielectric encapsulation layer is deposited onto the MIM stack in-situ while the substrate remains within the processing chamber used to etch the MIM stack. By etching the MIM stack and depositing the encapsulation layer within the same processing chamber, the techniques described herein minimize the exposure of the memory cell dielectric to oxygen, while maintaining throughput.

Abstract: A substrate liquid processing apparatus includes: at least one liquid pipe through which a processing liquid flows; a discharge nozzle configured to discharge the processing liquid supplied via the at least one liquid pipe; a valve mechanism configured to regulate a flow of the processing liquid in the at least one liquid pipe; and a liquid detection sensor configured to detect presence or absence of the processing liquid in the at least one liquid pipe, wherein in a state in which the valve mechanism is operating so that the processing liquid in the at least one liquid pipe is located at an upstream of a first pipe measurement site of the at least one liquid pipe, the liquid detection sensor detects the presence or absence of the processing liquid at the first pipe measurement site located at a first measurement point.

Abstract: The present disclosure provides a method for determining the undifferentiated state of pluripotent stem cells, comprising: irradiating a test culture medium in which pluripotent stem cells are cultured with wavelength light having a wavelength in the range of 190 nm to 2,500 nm or a partial range thereof; detecting the reflected light, transmitted light or transmitted reflected light thereof to obtain absorbance spectrum data; and analyzing the absorbance at all or part of the measurement wavelengths in the absorbance spectrum data to determine the undifferentiated state of the pluripotent stem cells.

Abstract: A film forming method is a method of forming a film on a substrate top face including a first region in which a metal or a semiconductor is exposed and a second region in which an insulator is exposed. The method includes a SAM forming process of forming a self-assembled monolayer film of a perfluoropolyether group-containing compound on the first region and a film growth process of forming a predetermined film on the second region after execution of SAM forming process.

Abstract: A plasma system includes a plasma apparatus including: a plasma chamber; a pedestal configured to hold a substrate in the chamber; and a radio frequency (RF) electrode configured to excite plasma in the chamber; an electromagnetic (EM) circuit block coupled to the RF electrode, the EM circuit block including: a function generator configured to output a broadband RF waveform, the waveform having EM power distributed over a range of frequencies; a broadband amplifier coupled to an output of the function generator, an operating frequency range of the amplifier including the range of frequencies; and a broadband impedance matching network having an input coupled to an output of the broadband amplifier and an output coupled to a terminal of the RF electrode, an operating frequency range of the broadband impedance matching network including the range of frequencies; and a controller configured to adjust an input parameter of the EM circuit block.

Abstract: A substrate processing apparatus according to the present disclosure includes a substrate holding unit, a fluid supplying unit, a processing-liquid supplying unit, a nozzle, a fluid amount adjusting unit, and a controller. The substrate holding unit holds a substrate to be rotatable. The fluid supplying unit supplies fluid including pressurized vapor or mist of deionized water. The processing-liquid supplying unit supplies processing liquid including at least a sulfuric acid. The nozzle is connected to the fluid supplying unit and the processing-liquid supplying unit to discharge mixed fluid of the fluid and the processing liquid toward the substrate. The fluid amount adjusting unit adjusts a flow volume of the fluid that is flowing through the fluid supplying unit. The controller controls the fluid amount adjusting unit to adjust a ratio of the fluid to the processing liquid.

Abstract: In one embodiment, a substrate imaging apparatus includes: a rotary holding unit that holds and rotates a substrate; a mirror member having a reflecting surface that opposes an end face of the substrate and a peripheral portion of a back surface of the substrate held by the rotary holding unit, the reflecting surface being inclined with respect to a rotation axis of the rotary holding unit; and a camera having an imaging device that receives both first light and second light through a lens, the first light coming from a peripheral portion of a front surface of the substrate held by the rotary holding unit, and the second light being a reflected light of second light which comes from the end face of the substrate held by the rotary holding unit and is reflected by the reflecting surface.

Abstract: A substrate treatment method includes: generating, for each of layers constituting a stacked film on a substrate, a captured image of the substrate after a treatment regarding a relevant layer; and acquiring information indicating a feature amount estimated based on the captured image for each of a plurality of layers including an outermost layer of the stacked film on the substrate.

Abstract: The plasma processing apparatus includes a chamber body, a stage, a gas supply mechanism, a DC power supply, a radio-frequency power supply, and a controller. The gas supply is configured to supply a heat transfer gas to the upper surface of the electrostatic chuck. The controller is configured to control the DC power supply. The controller controls the DC power supply to apply, to the electrostatic chuck, a voltage derived by combining an output of a first function that outputs a smaller value as the absolute value of a self-bias voltage generated according to the plasma becomes larger and an output of a second function that outputs a larger value as the pressure of the heat transfer gas supplied to the upper surface of the electrostatic chuck by the gas supply increases.

Abstract: Provided is an abnormality detection system that includes a first controller configured to control a substrate processing apparatus and a second controller configured to control a device provided in the substrate processing apparatus according to an instruction from the first controller, thereby detecting an abnormality in the device. The second controller includes a storage unit configured to collect status signals for the device for a predetermined time and at a predetermined sampling interval in a predetermined cycle and accumulate the collected status signals for the device, and the first controller includes an abnormality determination unit configured to acquire the accumulated status signals for the device from the second controller at a time interval equal to or longer than the predetermined time, and determine presence or absence of an abnormality in the device.

Abstract: A raw material supply apparatus includes: a raw material supply path through which a raw material gas is supplied into a processing container; a valve provided in the raw material supply path; a pressure sensor configured to detect an internal pressure of the raw material supply path; a raw material exhaust path connected to the raw material supply path and through which the raw material gas in the raw material supply path is exhausted; an opening degree adjustment mechanism provided in the raw material exhaust path and configured to control the internal pressure of the raw material supply path based on an adjustment of an opening degree of the opening degree adjustment mechanism; and a controller configured to perform the adjustment of the opening degree of the opening degree adjustment mechanism based on a value detected by the pressure sensor.