Abstract: A method of optimizing a recipe for a plasma process includes (a) building a virtual metrology (VM) model that predicts a wafer characteristic resulting from the plasma process based on a plasma parameter and (b) building a control model that describes a relationship between the plasma parameter and a recipe parameter. (c) The wafer characteristic is measured after performing the plasma process according to the recipe. (d) Whether the wafer characteristic is within a predetermined range is determined. (e) The VM model and the control model are calibrated based on the wafer characteristic. (f) The recipe is optimized by updating the plasma parameter based on the wafer characteristic using the VM model and updating the recipe parameter based on the plasma parameter using the control model. (c), (d), (e) and (f) are repeated until the wafer characteristic is within the predetermined range.

Abstract: A substrate processing apparatus includes a processing tub configured to store therein a processing liquid in which a substrate is immersed to be processed, the processing liquid including a first component and a second component having a boiling point higher than that of the first component; an adjusting liquid supply configured to supply an adjusting liquid configured to adjust a concentration of the second component into the processing tub, the adjusting liquid including the first component; and a controller configured to control the adjusting liquid supply. When changing the concentration, the controller calculates a liquid surface height in the processing tub corresponding to the concentration after being changed based on a concentration difference between the concentration after being changed and the concentration before being changed, and the controller controls a supply of the adjusting liquid into the processing tub based on the calculated liquid surface height.

Abstract: A plasma processing apparatus includes a processing chamber; a placing table disposed in the processing chamber to place a substrate thereon; an upper electrode facing the placing table; a member configured to adjust a temperature of the upper electrode; a first sensor provided within the member configured to adjust the temperature of the upper electrode, and configured to measure the temperature of the upper electrode; and a first sheet member, disposed between the upper electrode and the first sensor, having a relative dielectric constant of 2.4 or higher at a frequency of 1 MHz.

Abstract: A method of cleaning a stage in a plasma processing apparatus including the stage on which a substrate is placed, a lifting mechanism configured to raise and lower the substrate with respect to the stage, and a high-frequency power supply connected to the stage, includes: separating the stage and the substrate from each other using the lifting mechanism; and after the separating the stage and the substrate from each other, removing a deposit deposited on the stage with plasma generated by supplying a high-frequency power from the high-frequency power supply to the stage. In the separating the stage and the substrate from each other, a separation distance between the stage and the substrate is set such that a combined impedance formed around an outer peripheral portion of the stage is lower than a combined impedance formed immediately above a central portion of the stage.

Abstract: A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

Abstract: A deposition apparatus according to one aspect of the present disclosure includes a vacuum vessel, a rotary table rotatably disposed in the vacuum vessel, a heating device provided below the rotary table, and a radiation adjusting member. The rotary table is configured such that multiple substrates can be placed on the rotary table along a circumferential direction of the rotary table. The heating device is configured to heat the multiple substrates by thermal radiation, and the radiation adjusting member is configured to adjust an amount of radiant heat from the heating device to the plurality of substrates.

Abstract: A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.

Abstract: A plasma processing apparatus includes a plasma processing chamber; a base; an electrostatic chuck; a plurality of electrode layers disposed in the same plane within the electrostatic chuck; a switch group including a plurality of first switches electrically connected to the electrode layers, respectively; a power supply and a measurement unit that are electrically connected to the switch group; a second switch that selects either the power supply or the measurement unit as a connection destination of the switch group; and a controller. The power supply includes a power source that supplies a power to the electrode layers. The measurement unit includes a resistor and a voltmeter that measures a voltage applied to the resistor. The controller is capable of executing a control operation that includes switching the connection destination of the switch group to the measurement unit and then turning ON the plurality of first switches one by one.

Abstract: A method for etching a substrate includes: (a) providing a substrate processing apparatus including a processing chamber that forms a processing space, a substrate support provided inside the processing chamber to hold a substrate, and a power supply that supplies a bias power to at least the substrate support; (b) providing the substrate on the substrate support, the substrate including an underlying layer and an organic material layer on the underlying layer; (c) generating plasma in the processing chamber; and (d) repeating a predetermined cycle including an ON time during which the bias power is supplied to the substrate support and an OFF time during which the bias power is not supplied to the substrate support. The OFF time is 10 msec or longer.

Abstract: A plasma processing system includes a plasma processing chamber, a substrate support, a matching box, an RF power source, and a controller. The substrate support is disposed in the plasma processing chamber. The matching box is electrically connected to the substrate support. The RF power source is electrically connected to the matching box to generate a periodic RF pulse that includes a first power level, a second power level, and a third power level. The controller calculates the load impedance based on the reflected power of the RF pulse in each of first, second, and third time intervals during which the first, second, and third power levels are supplied, respectively, and controls a matching element included in the matching box based on the load impedance calculated in each of the first, second, and third time intervals.

Abstract: A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

Abstract: A processing apparatus includes: a processing container having a substantially cylindrical shape; a gas nozzle extending in a longitudinal direction of the processing container along an inside of a side wall of the processing container; an exhaust body formed on the side wall on an opposite side of the processing container to face the processing gas nozzle; and an adjustment gas nozzle configured to eject a concentration adjustment gas toward a center of the processing container. The adjustment gas nozzle is provided within an angle range in which the exhaust body is formed at a central angle with reference to the center of the processing container in a plan view from the longitudinal direction.

Abstract: A substrate processing apparatus includes a temperature detector, a calculation unit and an execution unit. The temperature detector is configured to detect a temperature of a substrate on which a processing liquid is discharged. The calculation unit is configured to calculate, by using a given calculation formula, an etching amount of the substrate based on the temperature detected by the temperature detector. The execution unit configured to perform an etching processing on the substrate by the processing liquid based on the etching amount.

Abstract: A plasma processing apparatus includes a processing vessel; a placing table, serving as a lower electrode, disposed within the processing vessel; an upper electrode serving as a facing electrode of the placing table; a plasma processor configured to form a gas within the processing vessel into plasma by supplying a high frequency power and to process a processing target object on the placing table with the plasma; a cover member configured to cover the upper electrode from thereabove; a cooler provided within the cover member and configured to cool the upper electrode with a coolant having a temperature lower than a dew point temperature of exterior air outside the processing vessel; and a gas supply configured to supply a low-dew point gas having a dew point temperature lower than the dew point temperature of the exterior air into a space surrounded by the cover member and the upper electrode.

Abstract: A method for marking a semiconductor substrate at the die level for providing unique authentication and serialization includes projecting a first pattern of actinic radiation onto a layer of photoresist on the substrate using mask-based photolithography, the first pattern defining semiconductor device structures and projecting a second pattern of actinic radiation onto the layer of photoresist using direct-write projection, the second pattern defining a unique wiring structure having a unique electrical signature.

Abstract: A substrate processing method of thinning a substrate having a protective tape attached on a front surface thereof includes measuring a thickness of the protective tape; and grinding, by using a grinder, a rear surface of the substrate held by a substrate holder.

Abstract: In a substrate processing apparatus for processing a substrate, a processing chamber accommodating the substrate is provided. A mounting table is disposed in the processing chamber and configured to attract and hold the substrate using an electrostatic attractive force. A charge amount measurement unit is disposed in the processing chamber and configured to measure charge amount of a substrate attraction surface of the mounting table. A charge neutralization mechanism is configured to neutralize the substrate attraction surface of the mounting table. A retreating mechanism is configured to make the charge amount measurement unit retreat from a measurement position facing the substrate attraction surface of the mounting table.

Abstract: In a plasma processing apparatus, a mounting table includes a heater for adjusting a temperature of a mounting surface mounting thereon a consumable part consumed by plasma processing. A heater control unit controls a supply power to the heater such that the heater reaches a setting temperature. A measurement unit measures, while controlling the supply power to the heater such that the temperature of the heater becomes constant, the supply powers in a non-ignition state where plasma is not ignited and in a transient state where the supply power is decreased after the plasma is ignited. A parameter calculation unit calculates a thickness of the consumable part by performing fitting with a calculation model, which has the thickness of the consumable part as a parameter and calculates the supply power in the transient state, by using the measured supply powers in the non-ignition state and in the transient state.

Abstract: A substrate processing apparatus includes: a rotary stage configured to hold a substrate; a rotary driver configured to rotate the rotary stage around a rotation axis; at least one electric heater installed in the rotary stage; at least one power receiving coil installed in the rotary stage and electrically connected to the electric heater; at least one power feeding coil installed to face the power receiving coil in a direction of the rotation axis with a gap between the power feeding coil and the power receiving coil; and a radio-frequency power supply unit configured to supply radio-frequency power to the power feeding coil.

Abstract: A nozzle standby device configured to allow a nozzle to stand by therein includes a nozzle accommodation unit, having an inner circumferential surface formed to surround a leading end portion of the nozzle, provided with a drain opening facing a discharge opening of the nozzle; and a solvent discharge opening opened within the nozzle accommodation unit. The nozzle accommodation unit has a diameter reducing portion having a first and a second inner circumferential surfaces having different angles with respect to a center line of the nozzle accommodation unit such that an inner diameter of the diameter reducing portion becomes smaller toward the drain opening. An intersection point of two straight lines extending along two opposite portions of the first inner circumferential surface is located above the discharge opening of the nozzle when the leading end portion of the nozzle is placed in the diameter reducing portion.