Abstract: A method for cleaning a substrate processing apparatus includes mounting a substrate on a mounting portion of an electrostatic chuck of the substrate processing apparatus to process the substrate; mounting a protector including a small diameter portion that covers the mounting portion and a large diameter portion that is disposed apart from an edge ring disposed on an outer periphery of the mounting portion and has a diameter larger than that of the small diameter portion, on the mounting portion; and supplying a cleaning gas, thereby removing by-products deposited between the mounting portion and the edge ring.

Abstract: A plasma processing method includes performing a first plasma processing in a processing chamber in a first period, and performing a second plasma processing in the processing chamber during a second period continuously after the first period. In the first period and the second period, a first radio-frequency power for bias is continuously supplied to a lower electrode. A second radio-frequency power for plasma generation may be supplied as a pulsed radio-frequency power in a first partial period in each cycle of the first radio-frequency power in the first period. The second radio-frequency power may be supplied as a pulsed radio-frequency power in a second partial period in each cycle of the first radio-frequency power in the second period.

Abstract: A method of manufacturing a semiconductor device includes a first laminating step, a second laminating step, a third laminating step, a first annealing step, and a fourth laminating step. In the first laminating step, a first electrode film is laminated on a substrate. In the second laminating step, a capacitive insulator is laminated on the first electrode film. In the third laminating step, a metal oxide is laminated on the capacitive insulator. In the first annealing step, the first electrode film, the capacitive insulator, and the metal oxide, which are laminated on the substrate, are annealed. In the fourth laminating step, a second electrode film is laminated on the annealed metal oxide. The capacitive insulator is an oxide that contains at least one of zirconium and hafnium, and the metal oxide is an oxide that contains at least one of tungsten, molybdenum, and vanadium.

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a chamber, a member, and a heater. Plasma is generated in an internal space of the chamber. The member is partially located in the internal space of the chamber. The heater is configured to heat the member. The member extends outward from the internal space of the chamber and is exposed to a space outside the chamber.

Abstract: A substrate liquid processing apparatus includes a processing liquid storage unit configured to store a processing liquid therein; a processing liquid drain unit configured to drain the processing liquid from the processing liquid storage unit; and a control unit. The control unit performs a first control in a constant concentration mode in which a concentration of the processing liquid in the processing liquid storage unit is regulated to a predetermined set concentration and a second control in a concentration changing mode in which the concentration of the processing liquid is changed. In the second control, a set concentration after concentration change is compared with a set concentration before the concentration change, and when the set concentration after the concentration change is lower, the control unit controls the processing liquid drain unit to start draining of the processing liquid.

Abstract: A temperature sensor, a temperature measuring device comprising the temperature sensor, and a temperature measuring method using the temperature sensor are disclosed. The temperature sensor is disposed at a measurement target having an extremely low temperature and transmits temperature measurement data to a temperature measurement output unit through a lead wire. The temperature sensor includes a housing, an electric resistor disposed in the housing, and a thermal anchor portion disposed inside or outside the housing and connected to the lead wire. Further, the lead wire extending from the thermal anchor portion is connected to the temperature measurement output unit.

Abstract: An apparatus includes a venting mechanism for venting a treatment vessel, a gas supply path including an upstream flow path to which a gas is supplied from a gas source, and multiple branch paths formed by branching a downstream side of the upstream flow path into multiple paths, each branch path being connected to the treatment vessel. The apparatus further includes first valves respectively provided in the branch paths to divert the gas to the branch paths, each first valve having a variable opening degree without being closed completely, a second valve provided in the upstream flow path to supply the gas or shut off the supply of the gas to a downstream side thereof, a pressure sensor that detects a pressure in the treatment vessel, and an abnormality detector that detects an abnormality in the downstream side of the second valve based on the detected pressure.

Abstract: A substrate processing method includes: increasing a temperature of a substrate by heating the substrate; after the increasing the temperature of the substrate, forming a liquid film of a pre-wetting liquid on a first surface of the substrate by supplying the pre-wetting liquid to the first surface of the substrate while heating and rotating the substrate at a first rotational speed; after the forming the liquid film, processing the first surface of the substrate with a chemical liquid by supplying the chemical liquid to the first surface of the substrate while heating and rotating the substrate at a second rotational speed that is lower than the second rotational speed; and after the processing the first surface of the substrate, decreasing the temperature of the substrate.

Abstract: A solution treatment apparatus applies a coating solution onto a substrate. The apparatus includes a holder holding and rotating the substrate; a coating solution supplier supplying the coating solution to the substrate on the holder; and an inner cup surrounding the holder from a lateral side and having a peripheral edge side upper surface inclining down outward in a radial direction from an apex part located below a peripheral edge side of the substrate on the holder. The inner cup has discharge ports formed along a circumferential direction at the apex part; and the discharge ports are formed to discharge a cleaning solution and make the cleaning solution flow down along the peripheral edge side upper surface of the inner cup, thereby cleaning the peripheral edge side upper surface, and to discharge the cleaning solution outward in the radial direction and obliquely upward.

Abstract: A heat treatment unit U2 includes a heat plate 20 configured to place a wafer W thereon and heat the wafer W placed thereon; multiple gap members 22 formed along a front surface 20a of the heat plate 20 on which the wafer W is placed, and configured to support the wafer W to secure a clearance V between the heat plate 20 and the wafer W; a suction unit 70 configured to suck the wafer W toward the heat plate 20; and an elevating pin 51 configured to penetrate the heat plate 20 and configured to be moved up and down to move the wafer W placed on the heat plate 20 up and down. The front surface 20a of the heat plate 20 has a concave region 20d inclined downwards from an outer side toward an inner side thereof.

Abstract: A transfer system configured to transfer a focus ring includes a processing system and a position detection system. The processing system includes a processing apparatus including a chamber main body and a placing table having a substrate placing region and a focus ring placing region; and a transfer device configured to transfer the focus ring. The position detection system includes a light source; multiple optical elements configured to output light and receive reflected light; a driving unit configured to move each optical element to allow each optical element to scan a scanning range; and a controller configured to calculate, based on the reflected light in the scanning range, a positional relationship between the placing table and the focus ring for each optical element. The transfer device is configured to adjust a transfer position of the focus ring onto the focus ring placing region based on the calculated positional relationship.

Abstract: The present disclosure provides a new wet atomic layer etch (ALE) process for etching copper. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching copper in a wet ALE process. By utilizing the new etch chemistries disclosed herein within a wet ALE process, the present disclosure provides a highly selective etch of copper with monolayer precision.

Abstract: A heat exchange unit performs heat exchange using a coolant and is disposed inside a placing table and equipped with heat exchange chambers. The heat exchange chambers are disposed in regions, respectively, set on the placing table. The regions are set along a placing surface of the placing table. A chiller device circulates the coolant with respect to the heat exchange chambers. A temperature detection device includes temperature detectors. The temperature detectors are disposed in the regions, respectively, between the respective heat exchange chambers and the placing surface. A control device controls the chiller device to adjust a pressure of the coolant such that a temperature of the placing table reaches a first temperature range, and controls the chiller device to individually adjust flow rates of the coolant supplied to the heat exchange chambers, respectively, such that all of temperatures measured by the temperature detectors reach the first temperature range.

Abstract: A method of optimizing a recipe for a plasma process includes (a) building a virtual metrology (VM) model that predicts a wafer characteristic resulting from the plasma process based on a plasma parameter and (b) building a control model that describes a relationship between the plasma parameter and a recipe parameter. (c) The wafer characteristic is measured after performing the plasma process according to the recipe. (d) Whether the wafer characteristic is within a predetermined range is determined. (e) The VM model and the control model are calibrated based on the wafer characteristic. (f) The recipe is optimized by updating the plasma parameter based on the wafer characteristic using the VM model and updating the recipe parameter based on the plasma parameter using the control model. (c), (d), (e) and (f) are repeated until the wafer characteristic is within the predetermined range.

Abstract: A substrate processing apparatus includes a processing tub configured to store therein a processing liquid in which a substrate is immersed to be processed, the processing liquid including a first component and a second component having a boiling point higher than that of the first component; an adjusting liquid supply configured to supply an adjusting liquid configured to adjust a concentration of the second component into the processing tub, the adjusting liquid including the first component; and a controller configured to control the adjusting liquid supply. When changing the concentration, the controller calculates a liquid surface height in the processing tub corresponding to the concentration after being changed based on a concentration difference between the concentration after being changed and the concentration before being changed, and the controller controls a supply of the adjusting liquid into the processing tub based on the calculated liquid surface height.

Abstract: A plasma processing apparatus includes a processing chamber; a placing table disposed in the processing chamber to place a substrate thereon; an upper electrode facing the placing table; a member configured to adjust a temperature of the upper electrode; a first sensor provided within the member configured to adjust the temperature of the upper electrode, and configured to measure the temperature of the upper electrode; and a first sheet member, disposed between the upper electrode and the first sensor, having a relative dielectric constant of 2.4 or higher at a frequency of 1 MHz.

Abstract: A method of cleaning a stage in a plasma processing apparatus including the stage on which a substrate is placed, a lifting mechanism configured to raise and lower the substrate with respect to the stage, and a high-frequency power supply connected to the stage, includes: separating the stage and the substrate from each other using the lifting mechanism; and after the separating the stage and the substrate from each other, removing a deposit deposited on the stage with plasma generated by supplying a high-frequency power from the high-frequency power supply to the stage. In the separating the stage and the substrate from each other, a separation distance between the stage and the substrate is set such that a combined impedance formed around an outer peripheral portion of the stage is lower than a combined impedance formed immediately above a central portion of the stage.

Abstract: A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

Abstract: A deposition apparatus according to one aspect of the present disclosure includes a vacuum vessel, a rotary table rotatably disposed in the vacuum vessel, a heating device provided below the rotary table, and a radiation adjusting member. The rotary table is configured such that multiple substrates can be placed on the rotary table along a circumferential direction of the rotary table. The heating device is configured to heat the multiple substrates by thermal radiation, and the radiation adjusting member is configured to adjust an amount of radiant heat from the heating device to the plurality of substrates.

Abstract: A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.