Abstract: A substrate processing system includes a stage on which a substrate is placed, a heater configured to heat the substrate by being supplied with power, a power supply part configured to supply power to the heater, a sensor configured to measure a resistance value of the heater, and a controller. The controller is configured to: store a conversion table in which a plurality of resistance values are associated with a plurality of temperatures; and acquire a reference resistance value measured by the sensor when a heater temperature is equal to a reference temperature. The controller is further configured to: acquire a temperature adjustment resistance value measured by the sensor after the substrate is heated by the heater; and control the power supply part based on the conversion table, the reference temperature, the reference resistance value, and the temperature adjustment resistance value.

Abstract: A substrate processing apparatus includes a holder configured to hold a substrate horizontally; a substrate rotating unit configured to rotate the holder; a nozzle configured to supply a fluid onto a top surface of the substrate; a supply unit configured to supply the fluid to the nozzle; and a moving unit configured to move the nozzle in a diametrical direction of the substrate. The nozzle includes a first nozzle member configured to discharge the fluid and a second nozzle member configured to discharge the fluid in a direction different from a direction in which the first nozzle member discharges the fluid. Discharge lines of the first and the second nozzle members intersect with each other at an intersection point. The supply unit includes a first and a second flow rate controllers configured to respectively control discharge amounts of the first and the second nozzle members independently.

Abstract: There is provided a liquid processing apparatus comprising: a stage on which a substrate is placed; a nozzle configured to supply a processing liquid to the substrate placed on the stage and perform a processing on the substrate; a capturing part configured to capture an image of the nozzle so as to acquire image data; and a detector configured to detect a liquid level based on a plurality of the image data acquired by the capturing part at different timings within a period in which a supply of the processing liquid from the nozzle is not performed, wherein the liquid level is formed by the processing liquid or a liquid other than the processing liquid in a processing liquid flow path provided inside the nozzle.

Abstract: A film forming method includes: preparing a substrate having a surface on which a first film containing boron and a second film made of a material different from that of the first film are formed; supplying a raw material gas, which contains halogen and an element X other than halogen, to the surface of the substrate; and supplying a plasmarized reaction gas, which contains oxygen, to the surface of the substrate, wherein a third film as an oxide film of the element X is selectively formed on the second film with respect to the first film by alternately supplying the raw material gas and the plasmarized reaction gas.

Abstract: The present disclosure provides various embodiments of an improved wet atomic layer etching (ALE) process. More specifically, the present disclosure provides various embodiments of methods that improve a wet ALE process by providing a dynamic ALE cycle timing schedule that balances throughput and etch rate with post-etch surface roughness. As described in more detail below, the methods disclosed herein may adjust the purge timing between ALE cycles and/or between individual surface modification and selective dissolution steps to provide a desired throughput, etch rate and/or post-etch surface roughness in a wet ALE process.

Abstract: A substrate processing apparatus including: a processing container; an injector provided inside the processing container to have a shape extending in a longitudinal direction and configured to supply a processing gas; a holder fixed to the injector; a windmill fixed to the holder; a first driving-gas supply part configured to supply a driving-gas that rotates the windmill in a first direction; a second driving-gas supply part configured to supply the driving-gas that rotates the windmill in a second direction opposite the first direction; and a driving-gas controller configured to control the supply of the driving-gas from the first driving-gas supply part and the second driving-gas supply part. The injector is rotated about the longitudinal direction corresponding to a rotational axis by rotating the windmill through the supply of the driving-gas from at least one of the first and second driving-gas supply parts under the control of the driving-gas controller.

Abstract: A method of plasma processing includes generating a glow phase of an electropositive plasma in a plasma processing chamber containing a first species, a second species, and a substrate comprising a major surface and generating an electronegative plasma in an afterglow phase of the electropositive plasma in the plasma processing chamber by combining the electrons of the electropositive plasma with atoms or molecules of the second species. The electropositive plasma includes positive ions of the first species and electrons. The electronegative plasma includes the positive ions and negative ions of the second species. The method further includes, in the afterglow phase, cyclically performing steps of generating neutral particles by applying a negative bias voltage at the substrate and applying a non-negative bias voltage at the substrate. The average velocity of the neutral particles is towards and substantially normal to the major surface of the substrate.

Abstract: A substrate treatment apparatus includes: treatment parts each of which performs a predetermined treatment; and a transfer mechanism which transfers a transfer object. Transfer objects are transferred in a predetermined transfer-in order into the substrate treatment apparatus. The substrate treatment apparatus includes a controller which acquires a process job. The controller determines before starting transfer of one transfer object to the treatment part, when the process job is different between the one transfer object and a preceding transfer object transferred into the substrate treatment apparatus prior to the one transfer object and a same kind of treatment is included in the respective process jobs thereof, a possibility of performing preceding execution of executing the same kind of treatment on the one transfer object previous to completion of the same kind of treatment on the preceding transfer object.

Abstract: A substrate processing method includes providing a substrate containing a metal surface and a dielectric material surface, selectively forming a sacrificial capping layer containing a self-assembled monolayer on the metal surface, removing the sacrificial capping layer to restore the metal surface, and processing the restored metal surface and the dielectric material surface. The sacrificial capping layer may be used to prevent metal diffusion into the dielectric material and to prevent oxidation and contamination of the metal surface while waiting for further processing of the substrate.

Abstract: Semiconductor devices and corresponding methods of manufacturing the same are disclosed. For example, a plurality of first semiconductor channels vertically spaced from one another and a plurality of second semiconductor channels vertically spaced from one another can be provided. The plurality of first semiconductor channels each have a first sidewall in contact with a first dielectric structure and the plurality of second semiconductor channels each have a first sidewall in contact with a second dielectric structure. A cavity can be formed between the first sidewalls of the plurality of first and second semiconductor channels. Gate structures can be formed around at least a top surface, a bottom surface, and a second sidewall of the first and second semiconductor channels.

Abstract: A plasma processing apparatus comprises a chamber, a substrate support, a plasma generator, a bias power supply and a chuck power supply. The substrate support includes a base and a dielectric part. The base includes a base member and an electrode. The base member is made of a dielectric or an insulator. The electrode is formed on an upper surface of the base member. The electrode forms an upper surface of the base. The dielectric part provides a supporting surface on which a substrate is placed. The dielectric part extends from the upper surface of the base to the supporting surface and is made of only a dielectric. The bias power supply and the chuck power supply are electrically connected to the electrode of the base.

Abstract: Semiconductor devices and corresponding methods of manufacturing the same are disclosed. For example, a plurality of first semiconductor channels vertically spaced from one another and a plurality of second semiconductor channels vertically spaced from one another can be provided. The plurality of first semiconductor channels each have a first sidewall in contact with a dielectric structure and the plurality of second semiconductor channels each have a first sidewall in contact with the dielectric structure. Gate structures can be formed around at least a top surface, a bottom surface, and a second sidewall of the first and second semiconductor channels.

Abstract: A measuring unit is provided in an electrode disposed inside a chamber or a wire connected to the electrode and measures either a voltage or a current. A gas supply unit supplies a gas to be made into plasma into the chamber. A radio-frequency power supply supplies radio-frequency power in a pulse form making the gas supplied into the chamber plasma to the chamber. A detector detects an end point of plasma processing from a change in any of a voltage, a current, and a phase difference between the voltage and the current measured by the measuring unit with a timing synchronized with a cycle of pulses of the radio-frequency power.

Abstract: An etching method of the present disclosure includes preparing a substrate having a first region and a second region, the substrate including a multilayer film in which two or more types of silicon containing films are stacked in the first region, and a monolayer film formed from one type of silicon containing film in the second region, and etching the multilayer film and the monolayer film at the same time, in which in the etching, the multilayer film and the monolayer film are etched at the same time by plasma generated from a processing gas that contains a hydrogen fluoride gas, a phosphorus containing gas, and a carbon containing gas, a first recess having a first width is formed in the multilayer film, and a second recess having a second width wider than the first width is formed in the monolayer film.

Abstract: A substrate processing apparatus includes: a mixer configured to mix sulfuric acid as a first component and a second component different from the first component to prepare an etchant; a nozzle configured to eject the etchant to a substrate; a first component supplier including a first flow path that supplies the first component to the mixer, a first instantaneous flowmeter and a first flow rate controller provided in the first flow path; a second component supplier including a second flow path different from the first flow path and configured to supply the second component to the mixer, a second instantaneous flowmeter and a second flow rate controller provided in the second flow path; and a controller configured to control the first and second flow rate controllers using average flow rates of the first component and the second component during the ejection of the etchant to the substrate.

Abstract: A method of processing a substrate includes forming a first layer stack on a substrate, the first layer stack including conductive layers and dielectric layers that alternate in the first layer stack. An opening is formed in the first layer stack, the opening extending through each of the conductive layers in the first layer stack such that sidewalls of each of the conductive layers are exposed within the opening. A second stack of layers is formed within the opening, the second stack of layers including channel layers of semiconductor material positioned in the second stack such that each channel layer contacts exposed sidewalls of a respective conductive layer of the first layer stack. Transistor channels are from the channel layers of the second stack such that each transistor channel extends between exposed sidewalls of a respective conductive layer within the opening.

Abstract: A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.

Abstract: A transfer method transfers a substrate between a transfer unit configured to hold and transfer the substrate and a substrate stage serving as a transfer destination or a transfer source of the substrate. The transfer method includes: acquiring positional information of the transfer unit and positional information of the substrate stage; determining whether or not there is a risk for the substrate to contact with the substrate stage, based on the acquired positional information of the transfer unit and positional information of the substrate stage; and when determined that there is a risk for the substrate to contact with the substrate stage, notifying the risk according to the determination at the determining.

Abstract: A measurement method performed by a semiconductor manufacturing apparatus including a chamber is provided. In the measurement method, first measurement data including a signal of a resonance frequency of the chamber is acquired as reference data, in response to transmitting an electrical signal into the chamber while a jig capable of performing wireless communication is not placed in the chamber. Subsequently, second measurement data including the signal of the resonance frequency of the chamber and including a signal of a resonance frequency of a sensor installed in the jig is acquired, in response to transmitting an electrical signal into the chamber while the jig is placed in the chamber. By subtracting the reference data from the second measurement data, third measurement data is calculated.

Abstract: A plasma processing apparatus includes a stage for supporting a target object in a chamber defined by a chamber body. The stage includes a lower electrode, an electrostatic chuck provided on the lower electrode, heaters provided in the electrostatic chuck, and terminals electrically connected to the heaters. A conductor pipe electrically connects a high frequency power supply and the lower electrode and extends from the lower electrode to the outside of the chamber body. Power supply lines supply power from a heater controller to the heaters. Filters partially forming the power supply lines prevent the inflow of high frequency power from the heaters to the heater controller. The power supply lines include wirings which respectively connect the terminals and the filters and extend to the outside of the chamber body through an inner bore of the conductor pipe.