Abstract: There is provided a substrate processing apparatus comprising: a first placement chamber; a second placement chamber; a transfer robot; and a controller. The controller is configured to: a) control the apparatus such that a position of an object on a fork of the transfer robot is detected as a first position when unloading the object from the first placement chamber; b) control the apparatus such that the object is unloaded from the first placement chamber to a standby position of the first placement chamber and then transferred to a standby position of the second placement chamber; c) control the apparatus such that a position of the object on the fork is detected as a second position when loading the object to the second placement chamber; and d) control the apparatus such that a transfer speed of b) is controlled based on the first position and the second position.

Abstract: A substrate processing method in a substrate processing apparatus includes (a) supplying a process gas that contains a gas containing halogen other than fluorine and a gas containing oxygen, to a processing container in which a stage is disposed, the stage being configured to place thereon a workpiece having an etching target film, (b) performing plasma processing on the workpiece by first plasma generated from the process gas under first plasma generation conditions, (c) performing plasma processing on the workpiece by second plasma generated from the process gas under second plasma generation conditions in which a condition of radio-frequency power and a processing time are different from those in the first plasma generation conditions, and other conditions are the same, and (d) repeating (b) and (c).

Abstract: A disclosed plasma processing apparatus includes a chamber, a plasma generator, a plurality of annular electromagnet units, a power source, at least one optical sensor, and a controller. The plurality of annular electromagnet units are provided coaxially with respect to an axis passing through an internal space of the chamber. The at least one optical sensor detects an emission intensity distribution of plasma along a radial direction in the chamber. The controller controls a power source to adjust currents respectively supplied to the plurality annular electromagnet units according to the emission intensity distribution.

Abstract: An etching method includes: (a) providing a substrate including an etching target film and a mask on the etching target film; (b) after (a), forming a metal-containing deposit on the mask by a first plasma generated from a first processing gas including a metal-containing gas and a hydrogen-containing gas; (c) after (b), deforming or modifying the metal-containing deposit by a second plasma generated from a second processing gas different from the first processing gas; and (d) after (c), etching the etching target film.

Abstract: Provided is a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes: a processing chamber; a substrate support provided in the processing chamber and configured to hold a substrate; a plate facing the substrate support and having a gas introduction port; and a cylindrical member configured to support the plate and surround a periphery of the substrate. The plate and the cylindrical member constitute a component of a SiC member having a SiC film deposited by CVD, and the cylindrical member includes a first portion that is deformable under a load.

Abstract: A substrate drying apparatus, a substrate drying method and a storage medium are capable of sublimating a sublimable substance filled in recesses of a pattern formed on a substrate while preventing pattern collapse. A first unit includes a solution supplier which supplies a sublimable substance solution containing a sublimable substance and a solvent to a processing surface, and a first liquid remover which forms a solid film of the sublimable substance on the processing surface by removing the solvent and a processing liquid from the processing surface. A second unit includes a second liquid remover which vaporize the solvent and the processing liquid remaining in the solid film by heating the substrate, and maintaining the substrate at a temperature within a first temperature range, and a solid film remover which remove the solid film from the processing surface by heating the substrate at a temperature within a second temperature range.

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, a dielectric plate, an upper electrode, an introduction part, a driving shaft, and an actuator. The stage is provided in the processing container. The dielectric plate is provided above the stage via a space in the processing container. The upper electrode has flexibility, is provided above the dielectric plate, and provides a gap between the dielectric plate and the upper electrode. The introduction part is an introduction part of radio frequency waves that are VHF waves or UHF waves, is provided at a horizontal end portion of the space. The driving shaft is coupled to the upper electrode on a central axial line of the processing container. The actuator is configured to move the driving shaft in a vertical direction.

Abstract: A substrate processing system includes: a substrate transfer device; processing units each having a substrate holding mechanism for rotatably holding a substrate received from the substrate transfer device and a processing fluid supply part for supplying a processing fluid to the substrate; and a controller for controlling the substrate transfer device and the processing units according to processing recipe information so as to execute the substrate processing process. When an abnormality in a certain unit of the processing units occurs in the substrate processing process for the substrate to be processed, the controller controls the substrate transfer device and a relief processing unit according to complementary recipe information so that the complementary processing process for a relief substrate is executed in the relief processing unit by transferring the relief substrate to the relief processing unit different from the certain processing unit.

Abstract: A substrate processing apparatus includes: a chamber having a container including at least one substrate-heating region and at least one substrate-cooling region; a heating mechanism configured to heat a first substrate in the at least one substrate-heating region; a cooling mechanism configured to cool a second substrate in the at least one substrate-cooling region while the first substrate is being heated; and a partition provided in the container and configured to separate the at least one substrate-heating region and the at least one substrate-cooling region from each other in terms of heat and pressure.

Abstract: A substrate stage includes: a base portion having a mounting surface; an annular support configured to support a substrate; an annular partition wall configured to divide the mounting surface into an outer region and an inner region in a radial direction of the substrate; a plurality of protrusions provided on the mounting surface and configured to support the substrate with a gap left between an upper end surface of the partition wall and the substrate; an outer flow path in communication with the outer region, and configured to allow a heat transfer gas supplied to a space between the substrate and the mounting surface to flow therethrough; an inner flow path in communication with the inner region, and configured to allow the heat transfer gas to flow therethrough; and an annular diffusion portion configured to diffuse the heat transfer gas along a circumferential direction of the partition wall.

Abstract: A test system that is compatible with multiple specifications while maintaining a footprint is provided. The test system includes a plurality of test chambers, each test chamber of the plurality of test chambers including a test head used when a substrate on a stage is tested, and a heating medium supply configured to supply a heating medium to the stage. The heating medium supply is disposed in an area lower than a test area in which the plurality of test chambers are disposed.

Abstract: There is provided a transport apparatus including: an articulated arm including: a first arm in which a drive motor is installed; a second arm configured to be driven by the first arm; a transmission portion configured to convert a rotation of the drive motor into a rotation of the second arm via a joint; a first detector configured to detect a first sensor value corresponding to a rotation angle of an input shaft of the transmission portion; and a second detector configured to detect a second sensor value corresponding to a rotation angle of the second arm; and a controller configured to control the articulated arm, wherein the controller is further configured to control the second arm to a target rotation angle based on the first sensor value and the second sensor value.

Abstract: A measuring method includes placing a substrate on an electrostatic chuck disposed inside a chamber, attracting the substrate onto the electrostatic chuck, generating plasma inside the chamber, detecting an amount of light reflected at the substrate by light emission of the plasma, and calculating a natural frequency of the substrate based on the amount of light.

Abstract: Devices are made by self-aligned quad pitch patterning (SAQP) and methods for making devices by self-aligned quad pitch patterning (SAQP) use a single spacer in the process. An intermediate process step called self-aligned double patterning (SADP) is used to double the pitch following the spacer deposition. A pattern is formed on a substrate, the pattern having ultra-fine resolutions by repeating the SADP step twice for pitch quadrupling and introducing a reversal layer to form a fine trench pattern and hole pattern. An initial pattern is obtained by the X-Y double line exposures. Reverse material is applied on the initial pattern and subsequent etching process converts each initial trench pattern to a line. The pattern designs or pattern layouts have improved LER/LWR (line edge roughness and line width roughness respectively) for below 12 nm lines and trenches in order to create self-aligned cross pitch quad trenches.

Abstract: A substrate processing apparatus includes: a holding part for holding a substrate; a rotating part for rotating the holding part to rotate the substrate together with the holding part; a liquid supply part for supplying a cleaning liquid to a main surface of the substrate; a polishing head for polishing the main surface; a moving part for scanning the polishing head in a radial direction of the substrate while pressing the polishing head against the main surface; and a controller for controlling the rotating part, the liquid supply part, and the moving part. The controller sets a division line that divides the main surface into plural areas in the radial direction, and controls the liquid supply part to supply the cleaning liquid for each area and controls the moving part to scan the polishing head for each area while a subsequent supply of the cleaning liquid is stopped.

Abstract: An apparatus for performing a sputtering process on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed, a target for emitting target particles to be adhered to the substrate by plasma formed in the processing chamber, a magnet, provided on a rear surface of the target, for adjusting a state of the plasma on the surface of the target, and a magnet moving mechanism for repeatedly moving the magnet between a position on one side and a position on the other side set across a center portion on the rear surface of the target. The apparatus further includes a collimator having two regulating plates for limiting an incident angle of the target particles to the substrate, and an arrangement position adjustment mechanism adjusting positions of the two regulating plates according to the movement of the magnet.

Abstract: A method for forming a silicon film includes supplying a first processing gas including a silicon-containing gas to a substrate to deposit a first silicon film under a first processing condition; and supplying a second processing gas including the silicon-containing gas to the substrate to deposit a second silicon film under a second processing condition. A second in-plane distribution of film characteristic when the second silicon film is deposited under the second processing condition is different from a first in-plane distribution of the film characteristic when the first silicon film is deposited under the first processing condition.

Abstract: An additional set of interconnects is created in bulk material, allowing connections to active devices to be made from both above and below. The interconnects below the active devices can form a power distribution network, and the interconnects above the active devices can form a signaling network. Various accommodations can be made to suit different applications, such as encapsulating buried elements, using sacrificial material, and replacing the bulk material with a dielectric. Epitaxial material can be used throughout the formation process, allowing for the creation of a monolithic substrate.

Abstract: A plasma processing apparatus includes: a placement table serving as a lower electrode and configured to place thereon a workpiece to be subjected to a plasma processing; a DC power supply configured to alternately generate a positive DC voltage and a negative DC voltage to be applied to the placement table; and a controller configured to control an overall operation of the plasma processing apparatus. The controller is configured to: measure a voltage of the workpiece placed on the placement table; calculate, based on the measured voltage of the workpiece, a potential difference between the placement table and the workpiece in a period during which the negative DC voltage is applied to the placement table; and control the DC power supply such that a value of the negative DC voltage applied to the placement table is shifted by a shift amount that decreases the calculated potential difference.

Abstract: There is provided an injector that extends in a longitudinal direction, including: a gas introduction part having a circular or a regular polygonal shape in a cross section perpendicular to the longitudinal direction and having no discharge holes; and a gas supply part having a protruded portion in one direction in the cross section perpendicular to the longitudinal direction, and having a plurality of discharge holes formed in a leading end of the protruded portion along the longitudinal direction, wherein a first end of the gas supply part in the longitudinal direction is connected to the gas introduction portion.