Abstract: In-situ hybrid bonding test measurements are provided. A method includes providing a plurality of first contacts of a daisy chain structure on a first substrate and a plurality of second contacts of the daisy chain structure on a second substrate, the plurality of second contacts configured to align with the plurality of first contacts, respectively. The method includes annealing the first substrate and the second substrate to electrically couple the plurality of first contacts to the plurality of second contacts, respectively. The method includes detecting, while annealing the first substrate and the second substrate, a resistance between a first terminal contact of the daisy chain structure and a second terminal contact of the daisy chain structure. The method includes adjusting at least one of an annealing time or an annealing temperature based on the resistance.

Abstract: A semiconductor device includes backside power rails over a bulk semiconductor material, a first bonding dielectric layer over the backside power rails, a first tier of transistors over the first bonding dielectric layer, a second bonding dielectric layer over the first tier of transistors, and a second tier of transistors over the second bonding dielectric layer. The first tier of transistors includes first channel structures having a first epitaxially grown semiconductor material. The second tier of transistors includes second channel structures having a second epitaxially grown semiconductor material. The backside power rails are spaced apart from the first tier of transistors by the first bonding dielectric layer. The first tier of transistors is spaced apart from the second tier of transistors by the second bonding dielectric layer.

Abstract: An information processing method includes: acquiring, by an information processing apparatus, input data to a substrate processing apparatus, intermediate data measured in relation to substrate processing performed by the substrate processing apparatus based on the input data, and processing result data measured in relation to a processing result of the substrate processing; generating, by the information processing apparatus, a processing result prediction model to receive the intermediate data as an input and output a prediction value of the processing result data; estimating, by the information processing apparatus, intermediate data for improving prediction accuracy of the processing result prediction model; and estimating, by the information processing apparatus, input data for obtaining the estimated intermediate data.

Abstract: A disclosed plasma processing method includes a direct-current power source configured to generate a negative direct-current voltage. A bias electrode of a substrate support provided in the chamber is alternately connected to the direct-current power source and the ground. A time until a potential of the bias electrode reaches a ground potential after the bias electrode is connected to the ground is set to be longer than a time until the potential of the bias electrode reaches the negative direct-current voltage after the direct-current power source is connected to the bias electrode.

Abstract: A plasma processing apparatus for performing plasma processing on a substrate, includes: a chamber; a substrate support provided inside the chamber, including a region where the substrate is supported and an edge ring provided around the region, and configured to support the substrate inside the edge ring; a plasma generator provided inside the chamber to generate plasma; a lifter provided inside the chamber to control a distance between the substrate support and the substrate; and a controller, wherein the controller controls: the lifter to position the substrate at a first position spaced apart by a first distance from the substrate support; the plasma generator to generate plasma inside the chamber while the substrate is at the first position; and the lifter to place the substrate on the substrate support inward of the edge ring from the first position while the plasma is generated inside the chamber.

Abstract: Provided is a semiconductor memory device including a first die and a second die disposed on the first die. The first die includes a substrate, a memory cell array having a plurality of memory cells disposed along a first direction perpendicular to a main surface of the substrate, a plurality of first conductive lines electrically connected to the memory cell array and extending in the first direction, the first conductive lines being bit lines or word lines, and a bonding layer having a plurality of bonding pads electrically connected to the plurality of first conductive lines, respectively. At least one of the plurality of bonding pads is provided at a position shifted from the first conductive line to which the at least one bonding pad is connected, when viewed from the first direction. The second die is provided on the bonding layer.

Abstract: A method for fabricating semiconductor devices is disclosed. The method includes forming a first hardmask layer over a substrate. The method includes forming a second hardmask layer over the first hardmask layer. The method includes forming an opening extending through the second hardmask layer and the first hardmask layer. The method includes depositing a polymer layer, wherein the polymer layer includes at least a portion in the opening. The method includes etching the substrate using respective remaining portions of the first hardmask layer and the second hardmask layer, together with the polymer layer, as a mask.

Abstract: Aspects of the present disclosure provide a wafer bonding system, which, for example, can include a wafer bonding tool configured to bond a first wafer and a second wafer to each other in accordance with a first wafer bonding recipe to produce a first post-bond wafer, a metrology tool integrated with the wafer bonding tool, and a tool controller coupled to the wafer bonding tool and the metrology tool. The metrology tool can be configured to measure a physical parameter of the first wafer. The physical parameter of the first wafer representing information relates to topographical features of the first wafer. The tool controller can have a model of a wafer bonding process. The model can include an input indicative of the physical parameter of the first wafer and configured to generate the first wafer bonding recipe based, at least in part, on the physical parameter of the first wafer.

Abstract: A transporter for transporting an object includes a compartment to accommodate the object; an opening portion connectable to a processing apparatus for a substrate; a gate valve to open and close the opening portion; a robotic arm including an end effector, the robotic arm to transfer the object with the end effector to and from the processing apparatus through the opening portion; a first connector structure including a first connector to receive power supplied to the transporter from an external apparatus external to the transporter; a drive to advance the first connector structure toward a second connector structure in the external apparatus to connect the first connector structure to the second connector structure; mover to move the transporter; and controller circuitry to control the drive, and cause the drive to connect the first connector structure to the second connector structure before the opening portion is connected to the processing apparatus.

Abstract: An upper assembly includes a ceiling plate, a base member, and at least one actuator. The ceiling plate is located above a processing space in a chamber in a substrate processing apparatus. The base member is located on the ceiling plate. The at least one actuator lifts the ceiling plate and urges the ceiling plate against the base member.

Abstract: Provided is a substrate support assembly. A base of the substrate support assembly includes a flow path. The first container is configured to change a first capacity therein such that the heat transfer medium is supplied to the flow path via the at least one first pipe by a decrease in the first capacity. A second container is configured to change a second capacity therein such that a gas is supplied to the flow path by a decrease in the second capacity. The first container and the second container are configured such that a decrease in one of the first capacity and the second capacity causes an increase in the other. The heat transfer medium supply further includes at least one third pipe and a valve.

Abstract: A plasma processing apparatus includes: a chamber; a substrate support disposed in the chamber, the substrate support including a lower electrode; an edge ring disposed to surround a substrate on the substrate support; an upper electrode disposed above the substrate support; a first RF power supply; a first DC power supply; and a controller configured to cause: (a) starting supply of a first RF power from the first RF power supply to the upper electrode or the lower electrode; and (b) after (a), starting the application of a first DC voltage from the first DC power supply to the edge ring when a first delay time elapses.

Abstract: Disclosed is a substrate support assembly. A base of the substrate support assembly includes a flow path. The first gas supply is connected to the first container. The first gas supply is configured to supply a first gas to the first container for supplying a first heat transfer medium in the first container to the flow path via at least one first pipe. The second gas supply is connected to the second container. The second gas supply is configured to supply a second gas to the second container. The heat transfer medium supply further includes at least one third pipe and a valve.

Abstract: A plasma processing apparatus is for performing plasma processing in a depressurizable inner space. The apparatus includes a chamber having therein an inner space, a supporting table provided in the inner space and configured to support a substrate to be mounted thereon, one or more first members included in the chamber or separate from the chamber and partially exposed to a depressurized environment including the inner space, and one or more second members included in the chamber or separate from the chamber, each being in contact with a corresponding one of said one or more first members, and partially disposed in an atmospheric pressure environment. The apparatus further includes one or more feeders each of which is configured to supply a coolant to a cavity formed in a corresponding one of said one or more second members.

Abstract: A model management system, a model management method, and a model management program that efficiently manage models applied to a substrate manufacturing process is provided. The model management system separately manages the models applied to the substrate manufacturing process in three or more layers, and includes a first management unit configured to manage a model at a predetermined layer, and one or more second management units configured to manage one or more models at a layer one level lower than the predetermined layer.

Abstract: An electrostatic chuck, includes: a central region configured to support a substrate; at least one through-hole formed in the central region; a first substrate contact portion arranged around the through-hole; and a second substrate contact portion arranged around the first substrate contact portion. The first substrate contact portion and the second substrate contact portion have protrusions protruding upward from the central region. The protrusions are arranged in the first substrate contact portion at a first density. The protrusions are arranged in the second substrate contact portion at a second density lower than the first density.

Abstract: A substrate processing method includes placing a substrate with a dielectric film on a substrate support in a chamber, and etching the dielectric film with plasm generated from a reaction gas containing an HF gas and at least one CxHyFz gas selected from the group consisting of a C4H2F6 gas, a C4H2F8 gas, a C3H2F4 gas, and a C3H2F6 gas. The etching includes setting the substrate support at a temperature of 0° C. or lower and setting the HF gas to a flow rate greater than a flow rate of the CxHyFz gas.

Abstract: A substrate processing method includes preparing a substrate. The substrate includes a first region and a second region providing an opening on the first region. The substrate processing method further includes forming a top deposit on a top of the second region by using a first plasma generated from a first gas. The substrate processing method further includes forming a first film on a surface of the top deposit and a sidewall surface defining the opening, the first film having a thickness decreasing along a depth direction of the opening.

Abstract: A plasma processing apparatus includes: a chamber; a bias power supply that generates an electric bias; a substrate support that supports a substrate and an edge ring in the chamber, and including a first region configured to hold the substrate, a second region provided to surround the first region and hold the edge ring, a first bias electrode provided in the first region to receive the electric bias, a first impedance adjusting electrode provided in the first region to be grounded, a second bias electrode provided in the second region to receive the electric bias, and a second impedance adjusting electrode provided in the second region to be grounded; an impedance adjusting mechanism connected to at least one of the first impedance adjusting electrode and the second impedance adjusting electrode; and an electric path connecting the bias power supply, the first bias electrode, and the second bias electrode.

Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes placing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber. The generating plasma includes etching the silicon-containing film with a chemical species contained in the plasma. A flow rate of the hydrogen fluoride gas is at least 80 vol % of a total flow rate of now-inert components of the first process gas.