Abstract: A processing liquid supply system includes a processing liquid supply path, a pump, a pressure gauge and a flowmeter, and a controller. Through the processing liquid supply path, a processing liquid is supplied to a substrate processing device configured to process a substrate. The pump is provided in the processing liquid supply path. The pressure gauge and the flowmeter are provided downstream of the pump in the processing liquid supply path. The controller controls individual components. The controller detects abnormality in supply of the processing liquid based on a measurement value of the pressure gauge and a measurement value of the flowmeter.

Abstract: A substrate inspection apparatus configured to inspect a substrate by using an image of a surface of the substrate includes a holder configured to hold the substrate; a first light source unit configured to emit visible light to the substrate; a second light source unit configured to emit ultraviolet light to the substrate; a first imaging sensor configured to perform capturing of a visible light image of the substrate by receiving reflected light from the substrate; a second imaging sensor configured to perform capturing of an ultraviolet light image of the substrate by receiving reflected light or scattered light from the substrate; and a controller configured to acquire the visible light image from the first imaging sensor and the ultraviolet light image from the second imaging sensor. The visible light image and the ultraviolet light image are images obtained by imaging a common region of the substrate.

Abstract: An exhaust structure for a flow rate control device 10 includes a main body 11 in which a main body flow path 13 communicating a fluid inlet 13i and a fluid outlet 130 is formed, a control valve 12 provided on the main body flow path, a restriction part 14 provided downstream of the control valve, and a pressure sensor 16 for measuring a pressure between the control valve and the restriction part, a gas source 2 for supplying a gas to the flow rate control device, and an exhaust path 4 branching at a branch point A on a gas supply path between the gas source and the flow rate control device. A first valve V1 is provided in the gas supply path 3 upstream of the branch point, and a second valve V2 is provided in the exhaust path.

Abstract: A communication system includes: a main device; a plurality of subordinate devices communicatively connected to the main device; and a calculation device communicatively connected to the main device and the subordinate devices, wherein a data frame transmitted to the plurality of subordinate devices includes a plurality of datagrams for each of the plurality of subordinate devices, each of the plurality of datagrams including setting data for a corresponding one of the plurality of subordinate devices and monitor data to be written in the corresponding one of the plurality of subordinate devices, and wherein the calculation device is configured to obtain, based on the monitor data for each of the plurality of subordinate devices in the data frame received in a preceding communication cycle, updated setting data for each of the plurality of datagrams in the data frame transmitted to the plurality of subordinate devices in a subsequent communication cycle.

Abstract: A substrate processing apparatus includes a rotary table configured to move each of multiple substrate chucks to, in sequence, a carry-in position where a carry-in of a substrate is performed, a processing position where thinning of the substrate is performed, and a carry-out position where a carry-out of the substrate is performed; a tilt angle adjusting device configured to adjust a tilt angle of the substrate chuck with respect to the rotary table at the processing position; and a tilt angle controller configured to control the tilt angle adjusting device based on a measurement result of a plate thickness measuring device. The plate thickness measuring device measures a plate thickness of the substrate at the carry-out position.

Abstract: An etching method includes: providing, to an interior of a chamber, a substrate having a three-layered film formed by stacking a first silicon oxide-based film, a silicon nitride-based film, and a second silicon oxide-based film; and collectively etching the three-layered film using a HF—NH3-based gas in the interior of the chamber while adjusting a gas ratio in each of the first silicon oxide-based film, the silicon nitride-based film, and the second silicon oxide-based film.

Abstract: A device includes a first set of modules configured for wafer shape correction and a second set of modules configured for wafer bonding. The first set of modules includes a metrology module configured to measure wafer shape data of a first wafer and a second wafer, including relative z-height values of the first wafer and the second wafer. A stressor film deposition module is configured to form a first stressor film on the first wafer. A stressor film modification module is configured to modify the first stressor film based on a first modification map that defines adjustments to internal stresses of the first wafer and is generated based on the wafer shape data. The second set of modules includes an alignment module configured to align the first wafer with the second wafer, and a bonding module configured to bond the first wafer to the second wafer.

Abstract: An etching method for selectively etching a material containing Si and O is provided. The etching method includes providing a substrate containing the material containing Si and O in a chamber, repeating a first period for supplying a basic gas, which is started first, and a second period for supplying a fluorine-containing gas, which is started next, with at least a part of the second period not overlapping with the first period, and heating and removing a reaction product generated by the supply of the basic gas and the supply of the fluorine-containing gas.

Abstract: A substrate processing apparatus configured to process a substrate includes a substrate holder configured to hold, in a combined substrate in which a front surface of a first substrate and a front surface of a second substrate are bonded to each other, the second substrate; a periphery modification unit configured to form a peripheral modification layer by radiating laser light for periphery to an inside of the first substrate held by the substrate holder along a boundary between a peripheral portion of the first substrate as a removing target and a central portion thereof; and an internal modification unit configured to form, after the peripheral modification layer is formed by the periphery modification unit, an internal modification layer by radiating laser light for internal surface to the inside of the first substrate held by the substrate holder along a plane direction of the first substrate.

Abstract: A substrate processing apparatus for processing a substrate includes: a processing container in which the substrate is accommodated; a stage provided in an interior of the processing container and configured to place the substrate thereon; a partition wall provided in the interior of the processing container and surrounding an outer circumference of the stage; an inner gas supplier configured to supply a first gas to an inner side of the partition wall; and an outer gas supplier configured to supply a second gas to an outer side of the partition wall in the interior of the processing container.

Abstract: Aspects of the present disclosure provide a bonding device for bonding two wafers. For example, the bonding device can include a first bonding chuck and a second bonding chuck. The first bonding chuck can have a first bonding head for a first wafer to be mounted thereon. The second bonding chuck can have a plurality of second bonding heads for a second wafer to be mounted thereon. The second bonding heads can be controlled individually to apply local pressures onto the second wafer to move the second wafer toward the first wafer to bond the second wafer to the first wafer, the local pressures corresponding to bow measurement of the first wafer and the second wafer.

Abstract: A disclosed plasma processing apparatus includes a chamber, a plasma generator, a plurality of annular electromagnet units, a power source, at least one optical sensor, and a controller. The plurality of annular electromagnet units are provided coaxially with respect to an axis passing through an internal space of the chamber. The at least one optical sensor detects an emission intensity distribution of plasma along a radial direction in the chamber. The controller controls a power source to adjust currents respectively supplied to the plurality annular electromagnet units according to the emission intensity distribution.

Abstract: A method of manufacturing a semiconductor device includes: forming a first film containing carbon over a silicon nitride film and a first conductive film; forming a first silicon oxide film surrounding the first film over the silicon nitride film and the first conductive film; removing the first film to form, in the first silicon oxide film, a first opening that exposes at least a part of the silicon nitride film and at least a part of the first conductive film; and forming a second conductive film on and in contact with the first conductive film in the first opening.

Abstract: A substrate processing method of a combined substrate in which a first substrate having a surface film stacked thereon and a second substrate are bonded to each other includes separating the first substrate as a removing target from the second substrate; and removing or modifying at least a surface layer of the surface film at a peripheral portion of the second substrate by radiating laser light to an exposed surface of the surface film remaining at the peripheral portion of the second substrate, the exposed surface being exposed as a result of the separating of the first substrate.

Abstract: A method of processing a substrate, including forming a photomask based on a layout of a first surface of a wafer including at least one opaque region and at least one transparent region and the first surface of the wafer being coated with a photosensitive resist; providing the photomask at a first photomask location between the first surface of the wafer and a source of radiation at a predetermined wavelength, the at least one opaque region of the photomask covering a first region of the first surface of the wafer and the at least one transparent region of the photomask exposing a second region of the first surface of the wafer; and exposing the first surface of wafer to a first pattern of radiation, the first pattern of radiation including the second region of the wafer exposed by the at least one transparent region of the photomask.

Abstract: A method includes providing a workpiece in an etching apparatus at ambient temperature, the workpiece comprising a dielectric layer adjacent a conductive layer over a semiconductor substrate. The method includes performing an etching process to selectively remove the dielectric layer relative to the conductive layer. The method further includes, while performing the etching process, cooling the workpiece to a processing temperature that is below the ambient temperature.

Abstract: A substrate processing method includes: (a) preparing a substrate having a first region containing a first material, and a second region containing a second material different from the first material; (b) forming a metal-containing deposit on the first region by using a first plasma generated from a first processing gas containing at least one of carbon and hydrogen, fluorine, and metal; (c) modifying at least the surface of the metal-containing deposit by using a second plasma generated from a second processing gas different from the first processing gas, after (b); and (d) repeating (b) and (c).

Abstract: In one embodiment, a substrate support comprises a support body, a base, and a ceramic member. The support body is configured to support an object thereon. The object includes a substrate. The support body includes a dielectric portion and a bias electrode. The support body provides a first through-hole penetrating from an upper surface of the dielectric portion to a lower surface of the dielectric portion. The base provides a second through-hole communicating with the first through-hole. The ceramic member has permeability allowing a heat-transfer gas to pass therethrough. The ceramic member is filled in an upper end of the first through-hole. The ceramic member is positioned to set a distance between a lower end thereof and the bias electrode to be smaller than a distance between an upper end thereof and the bias electrode, in a direction in which a central axis of the first through-hole extends.

Abstract: One aspect of the present disclosure relates to a method of setting up a test apparatus that is a method of setting up the test apparatus to test a substrate by bringing a probe into contact with an electrode pad formed on a chip on the substrate that is mounted on a stage. The method includes acquiring a first image including the probe in a probe card that is attached to the test apparatus. The method includes calculating first information including a center of gravity, and an angle, for the probe card, based on probe information including a position of the probe that is calculated based on the first image; and probe information or pad information that is pre-provisioned and corresponds to the probe card. The method includes acquiring a second image including the electrode pad on the substrate mounted on the stage.

Abstract: A substrate processing method includes: a pressure increasing process of increasing an internal pressure of a process container to a processing pressure by supplying a process fluid into the process container; and after the pressure increasing process, a circulating process of supplying the process fluid from a second discharge part into the process container and discharging the process fluid in the process container from a fluid discharge part, while maintaining the internal pressure at the processing pressure, wherein the pressure increasing process includes: a first pressure increasing stage of increasing the internal pressure to a switching pressure by supplying the process fluid from a first discharge part into the process container; and after the first pressure increasing stage, a second pressure increasing stage of increasing the internal pressure from the switching pressure to the processing pressure by supplying the process fluid from the second discharge part into the process container.