Abstract: Embodiments of circuits, devices, and methods for a power detection arrangement are disclosed. The power detection arrangement may have a coupler coupled with, and in between, a switch and an output to couple a signal to a detector. The power detection arrangement may include a harmonic suppressor coupled with, and in between, the coupler and the detector to reduce an amount of harmonic signals transmitted back to the coupler. Other embodiments may be described and claimed.

Abstract: Embodiments include but are not limited to apparatuses and systems including a microelectronic device including a die having an active surface, a conductive pillar formed on the active surface of the die, the conductive pillar having a side surface, and a molding material encasing the die and the conductive pillar, including covering the active surface of the die and the side surface of the conductive pillar. Methods for making the same also are described.

Abstract: A SAW coupled resonator filter providing improved rejection outside the passband frequencies includes at least two filter tracks on a piezoelectric substrate with each track having a plurality of acoustically cascaded transducers disposed along a longitudinal axis of the filter track. At least one filter track includes signal pads driven in a differential mode or a balanced mode. The two tracks are electrically connected with crossover bridges crossing over connecting lines between the tracks such that voltages across the crossover bridges are approximately the same in magnitude but substantially out-of-phase. The connecting lines extend between opposing bus bars of split transducers within each of the filter tracks.

Abstract: Embodiments include but are not limited to apparatuses and systems including a unit cell having a source electrode, a gate electrode to receive an input radio frequency (RF) signal, and a drain electrode to output an amplified RF signal. A field plate may be coupled with the source electrode, and a feedback resistor may be coupled between the field plate and the source electrode.

Abstract: A radio frequency (RF) switch using a field effect transistor has 2nd order intermodulation distortion improved through use of a feed forward capacitor electrically connected between the gate and a voltage coupler connected between the source and drain of the FET. With a control voltage provided at the gate through a gate feed resistor for operation of the FET, the feed forward capacitor feeds an RF voltage from the drain terminal and the source terminal to the gate terminal through the gate feed resistor.

Abstract: A SAW device having metal electrodes on a surface of the piezoelectric substrate includes a dielectric layer deposited on the surface. Depositing the layer results in seams extending upward from the electrodes extending above the surface of the substrate. An additional seam results from one seam extending from one electrode joining a second seam extending from an adjacent electrode within the dielectric layer and is generally formed above the height of the electrodes. The additional seam is removed through planarization or the like. The dielectric layer may be further planarized for providing a thickness of the dielectric layer above the electrodes as desired.

Abstract: Embodiments of circuits, devices, and methods related to calibration circuits are disclosed. In various embodiments, a calibration circuit may be used for calibrating a power detector circuit. In various other embodiments, a calibration circuit may be used for calibrating a resistor module. Other embodiments may also be described and claimed.

Abstract: Embodiments of circuits, apparatuses, and systems for a switchable radio frequency (RF) power amplifier are disclosed. Some embodiments include a matching network configured to alternatively provide a first load impedance or second load impedance based at least in part on an amplification mode of a power amplification section. Other embodiments may be described and claimed.

Abstract: A co-integrated HBT/FET apparatus and system, and methods for making the same, are disclosed. A co-integrated HBT/FET apparatus may include a first epitaxial structure formed over a substrate, the first epitaxial structure forming, at least in part, a FET device, a separation layer formed over the first epitaxial structure, and a second epitaxial structure formed over the separation layer, the second epitaxial structure forming, at least in part, a heterojunction bipolar transistor (HBT) device.

Abstract: Embodiments of circuits, apparatuses, and systems for a protection circuit having a control element with an attenuation state to protect against overload conditions. Other embodiments may be described and claimed.

Abstract: Planarization methods for maintaining planar surfaces in the fabrication of such devices as BAW devices and capacitors on a planar or planarized substrate are described. In accordance with the method, a metal layer is deposited and patterned, and an oxide layer is deposited using a high density plasma chemical vapor deposition (HDP CVD) process to a thickness equal to the thickness of the metal layer. The HDP CVD process provides an oxide layer on the patterned metal tapering upward from the edge of the patterned metal layer. Then, after masking and etching the oxide layer from the patterned metal layer, the patterned metal layer and surrounding oxide layer form a substantially planar layer, interrupted by small remaining oxide protrusions at the edges of the patterned layer. These small remaining oxide protrusions may be too small to significantly disturb the flatness of a further oxide or other layer or they may be further mitigated by the application of another HDP CVD oxide film.

Abstract: A method of minimizing etch undercut and providing clean metal liftoff in subsequent metal deposition is provided. In one embodiment a bilayer resist mask is employed and used for etching of underlying substrate material and subsequent metal liftoff. In one embodiment, the top layer resist such as positive photoresist which is sensitive to selected range of energy, such as near UV or violet light, is first patterned by standard photolithography techniques and resist development in a first developer to expose portion of a bottom resist layer which is sensitive to a different selected range of energy, such as deep UV light. The exposed portion of the bottom layer resist is then removed by anisotropic etching such as oxygen reactive ion etching using the top layer resist as the etch mask to expose portion of the underlying substrate. This minimizes the undercut in the bottom resist around the top photoresist opening.

Abstract: Embodiments of apparatuses, methods, and systems for a radio frequency (RF) amplifier with a beta correction block are generally described herein. In some embodiments, the beta correction block may be configured relative to an output stage so that a variation in a beta of the output stage is tracked by a corresponding variation of a reference provided by the beta correction block. Other embodiments may be described and claimed.

Abstract: A circuit having a substrate, a generator with a field effect transistor (FET) portion and a heterojunction bipolar transistor (HBT) portion integrated in the substrate, a voltage-to-voltage conveyor integrated in the substrate, a bias circuit, and a power amplifier is disclosed.

Abstract: An interdigital transducer includes an edge gap length between ends of electrodes and the opposing busbar increased sufficiently for reducing or even eliminating tunneling effects through the gap. As a result, a wave velocity of the acoustic wave within the longitudinally extending edge regions is less than the wave velocity within the transducer center region, and the wave velocity within the opposing gap regions is greater than a velocity in the transducer center region, thus an essentially flat propagation mode results within the aperture of the transducer. A SAW transducer or a SAW resonator on a high coupling substrate will thus guide the energy in the transducer region without a need for apodization. Higher equivalent coupling factors as well as lower losses are obtained.

Abstract: An acoustic wave device includes electrodes carried on a surface of a piezoelectric material and an array of reflective obstacles such that elastic energy resulting from a piezoelectric effect is preferentially directed along a primary wave propagation path. The array of reflective obstacles are positioned generally parallel to the surface of the piezoelectric material and redirect acoustic waves typically reflected in other than a desirable direction to along a desired direction generally along the primary propagation path. The obstacles improve performance for SAW and BAW devices by effecting reflected energy and suppressing spurious modes.

Abstract: An output power detection circuit including a detection circuit is disclosed. The output power detection circuit further includes a summing network, wherein a first voltage input of the summing network is capable of receiving a voltage that is proportional with a current flowing through an output stage of an RF amplifier circuit, a second voltage input is coupled with the detection circuit, and an output is capable of providing a summing voltage.

Abstract: Embodiments include but are not limited to apparatuses and systems including a circuit comprising a unit cell including an input and an output, and a harmonic trap, intrinsic to the unit cell, implemented on one of the input and the output. Other embodiments may be described and claimed.

Abstract: Embodiments include but are not limited to apparatuses and systems including a package having stud bumps for die alignment. A package may include a package substrate, and a plurality of stud bumps coupled to the package substrate. The stud bumps may define a die region of the package substrate in which movement of a die disposed within the die region is restricted prior to attachment of the die to the package substrate, wherein the plurality of stud bumps comprise a profile that is less than a profile of the die when attached to the package substrate. Other embodiments may be described.

Abstract: An apparatus and method is disclosed for providing a sensor circuit to detect when an output stage of a radio frequency (RF) power amplifier is driven into a non-linear saturation region and provide an output detection signal that is representative of the degree of saturation of the output stage. The sensor circuit includes a detection element operably coupled with an output stage and a reference voltage element operably coupled with the detection element, the reference voltage element is capable of providing an output detection signal.