Patents Assigned to TriQuint Semiconductor, Inc.
  • Patent number: 8174315
    Abstract: According to an embodiment, a method is provided that includes: adapting the impedance of the load dependent on working conditions of the active device using a controllable output-side adaptation network coupled between an output-side terminal of a transformer and an output-side node, to generate an adapted impedance of the load, adjusting the adapted impedance independent of the working conditions of the active device, using the transformer including a first inductor having a first terminal to receive the output of the active device via the input-side node, a second inductor having an output-side terminal, where the second inductor is magnetically coupled to the first inductor.
    Type: Grant
    Filed: April 27, 2009
    Date of Patent: May 8, 2012
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Tobias Mangold, Andreas Weisgerber
  • Patent number: 8164389
    Abstract: Embodiments of circuits, apparatuses, and systems for an overdrive protection circuit arranged at an input to a primary power transistor to protect against overdrive conditions, where the overdrive protection circuit includes a sensing resistor. Other embodiments may be described and claimed.
    Type: Grant
    Filed: May 26, 2010
    Date of Patent: April 24, 2012
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Xiaopeng Sun, Mehra Mokalla, Wenlong Ma, Barry Jia-Fu Lin
  • Patent number: 8164387
    Abstract: Embodiments of circuits and systems for a harmonic tuning network coupled with a radio frequency (RF) push-pull power amplifier to terminate both second- and third-harmonic energies are disclosed. Other embodiments may also be described and claimed.
    Type: Grant
    Filed: June 30, 2010
    Date of Patent: April 24, 2012
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Thomas R. Apel, Jun Zhao
  • Patent number: 8159048
    Abstract: Embodiments of methods, apparatus, devices and/or systems associated with bipolar junction transistor are disclosed.
    Type: Grant
    Filed: January 30, 2004
    Date of Patent: April 17, 2012
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Thomas R. Apel, Jeremy R. Middleton
  • Publication number: 20120080768
    Abstract: Embodiments include but are not limited to apparatuses and systems including a microelectronic device including a die having a first surface and a second surface opposite the first surface, a conductive pillar formed on the first surface of the die, and an encapsulant material encasing the die, including covering the first surface, the second surface, and at least a portion of a side surface of the conductive pillar. Methods for making the same also are described.
    Type: Application
    Filed: October 3, 2011
    Publication date: April 5, 2012
    Applicant: TRIQUINT SEMICONDUCTOR, INC.
    Inventors: Frank J. Juskey, Paul Bantz, Otto Berger
  • Patent number: 8149500
    Abstract: In an embodiment, set forth by way of example and not limitation, a Bragg mirror includes a first bi-layer of a first thickness and a second bi-layer of a second thickness which is different from the first thickness. In this exemplary embodiment, the first bi-layer consists essentially of a first high impedance layer and a first low impedance layer, and the second bi-layer of a second thickness which is different from the first thickness, the second bi-layer consisting essentially of a second high impedance layer and a second low impedance layer. Preferably, the first bi-layer is configured to substantially reflect a first wavelength and the second bi-layer is configured to substantially reflect a second wavelength different from the first wavelength.
    Type: Grant
    Filed: January 30, 2010
    Date of Patent: April 3, 2012
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Ed Godshalk, Guillaume Bouche
  • Patent number: 8143654
    Abstract: Embodiments of apparatuses, articles, methods, and systems for a monolithic microwave integrated circuit with a substrate having a diamond layer are generally described herein. Other embodiments may be described and claimed.
    Type: Grant
    Filed: January 16, 2008
    Date of Patent: March 27, 2012
    Assignee: TriQuint Semiconductor, Inc.
    Inventor: Paul Saunier
  • Patent number: 8144441
    Abstract: An apparatus and method is disclosed for providing an electrostatic discharge protection circuit for compound semiconductor devices and circuits. The electrostatic discharge protection circuit comprises a first terminal and a second terminal. The electrostatic discharge protection circuit further comprises a transistor shunt element that is operably coupled between the first terminal and the second terminal; the transistor shunt element is capable of providing a bi-directional discharge path between the first terminal and the second terminal. The electrostatic discharge protection circuit further comprises a shut-off element that is operably coupled with the second terminal; the shut-off element is capable of keeping the transistor shunt element turned-off.
    Type: Grant
    Filed: August 30, 2006
    Date of Patent: March 27, 2012
    Assignee: Triquint Semiconductor, Inc.
    Inventors: Andrew T. Ping, Dominic J. Ogbonnah
  • Patent number: 8107903
    Abstract: Embodiments of apparatuses, methods, and systems for a radio frequency amplification circuit utilizing a variable voltage generator are generally described herein. Other embodiments may be described and claimed.
    Type: Grant
    Filed: November 7, 2008
    Date of Patent: January 31, 2012
    Assignee: TriQuint Semiconductor, Inc.
    Inventor: Steve LeSage
  • Patent number: 8102207
    Abstract: An apparatus and method to improve broadband amplifier linearization. The present circuits make use of pre-distortion techniques to improve the 3rd order distortion of an amplifier to reduce the amount of DC power required to achieve a given system requirement. In addition, the amplifiers have broadband characteristics which lend themselves to simplified pre-distortion. A pre-distortion linearizer circuit is connected across the input terminals of an amplifier. The linearizer circuit includes multiple diodes to improve the clipping performance of the linearizer. In addition, RC circuits align the phase of the linearizer distortion to be opposite that of the amplifier.
    Type: Grant
    Filed: October 16, 2009
    Date of Patent: January 24, 2012
    Assignee: TriQuint Semiconductor, Inc.
    Inventor: Chris J. Day
  • Publication number: 20120007658
    Abstract: Embodiments of circuits, devices, and methods related to a radio frequency switch are disclosed. In various embodiments, a circuit may comprise a series path including a series transistor to be switched on during a first mode of operation; a shunt path including a shunt transistor to be switched off during the first mode of operation; and a return path including a return transistor to be switched on during the first mode of operation. Other embodiments may also be described and claimed.
    Type: Application
    Filed: July 8, 2010
    Publication date: January 12, 2012
    Applicant: TRIQUINT SEMICONDUCTOR, INC.
    Inventor: Wolfram Stiebler
  • Patent number: 8093959
    Abstract: Embodiments of a microelectronic device including laminate baluns are generally described herein. A microelectronic device may include a laminate structure including a plurality of laminate layers, a first balun element disposed in the laminate structure, and a second balun element disposed in the laminate structure, wherein at least a portion of the first balun element is situated over the second balun element. Other embodiments may be described and claimed.
    Type: Grant
    Filed: March 16, 2009
    Date of Patent: January 10, 2012
    Assignee: Triquint Semiconductor, Inc.
    Inventor: Thomas R. Apel
  • Patent number: 8085117
    Abstract: A piezoelectric boundary acoustic wave (PBAW) device includes a slotted dielectric body disposed over one surface of a piezoelectric body and electrodes forming an IDT at the interface between the piezoelectric body and the dielectric body. The thickness of the electrode is set so that the acoustic velocity of the boundary acoustic waves is less than acoustic waves propagating in the piezoelectric body.
    Type: Grant
    Filed: July 29, 2009
    Date of Patent: December 27, 2011
    Assignee: Triquint Semiconductor, Inc.
    Inventors: Benjamin P. Abbott, Marc Solal, Michael Wang, Kenya Hashimoto
  • Publication number: 20110291765
    Abstract: Embodiments of circuits, apparatuses, and systems for an overdrive protection circuit arranged at an input to a primary power transistor to protect against overdrive conditions, where the overdrive protection circuit includes a sensing resistor. Other embodiments may be described and claimed.
    Type: Application
    Filed: May 26, 2010
    Publication date: December 1, 2011
    Applicant: TRIQUINT SEMICONDUCTOR, INC.
    Inventors: Xiaopeng Sun, Mehra Mokalla, Wenlong Ma, Barry Jia-Fu Lin
  • Publication number: 20110292554
    Abstract: Embodiments of circuits, apparatuses, and systems for a protection circuit to protect against overdrive or overvoltage conditions. Other embodiments may be described and claimed.
    Type: Application
    Filed: May 24, 2011
    Publication date: December 1, 2011
    Applicant: TRIQUINT SEMICONDUCTOR, INC.
    Inventors: Jingshi Yao, Peter Hu, Xiaopeng Sun, Barry Jia-Fu Lin, Mehra Mokalla
  • Patent number: 8058768
    Abstract: A bulk acoustic wave, BAW, resonator device comprising first and second metal layers (10, 20) and an intervening piezoelectric layer (30), the first metal layer (10) comprising spaced first and second portions (12, 14), wherein the first and second portions (12, 14) are each arranged as a plurality of interconnected fingers (16, 18), and wherein each of the plurality of fingers (16) of the first portion (12) is acoustically coupled to at least one of the fingers (18) of the second portion (14). In one embodiment the fingers of the first portion (12) are interlaced with the fingers (18) of the second portion (14), thereby providing direct coupling. In another embodiment the acoustic coupling between the fingers of the first and second portions is provided indirectly by further portions (15) of the first metal layer (10).
    Type: Grant
    Filed: May 23, 2006
    Date of Patent: November 15, 2011
    Assignee: Triquint Semiconductor, Inc.
    Inventors: Robert F. Milsom, Frederik W. M. VanHelmont, Andreas B. M. Jansman, Jaap Ruigrok, Hans-Peter Loebl
  • Patent number: 8044553
    Abstract: A SAW device having metal electrodes on a surface of the piezoelectric substrate includes a dielectric layer deposited on the surface. Depositing the layer results in seams extending upward from the electrodes extending above the surface of the substrate. An additional seam results from one seam extending from one electrode joining a second seam extending from an adjacent electrode within the dielectric layer and is generally formed above the height of the electrodes. The additional seam is removed through planarization or the like. The dielectric layer may be further planarized for providing a thickness of the dielectric layer above the electrodes as desired.
    Type: Grant
    Filed: February 22, 2010
    Date of Patent: October 25, 2011
    Assignee: Triquint Semiconductor, Inc.
    Inventors: Alan S. Chen, Taeho Kook, Kurt G. Steiner, Stephen A. Neston, Timothy J. Daniel
  • Publication number: 20110248693
    Abstract: Embodiments of circuits, apparatuses, and systems for a voltage regulator with a control loop for avoiding hard saturation are disclosed. Other embodiments may be described and claimed.
    Type: Application
    Filed: April 9, 2010
    Publication date: October 13, 2011
    Applicant: TRIQUINT SEMICONDUCTOR, INC.
    Inventors: Kiran Karnik, Andrew Labaziewicz
  • Patent number: 8035464
    Abstract: Improved coupling coefficients and desirable filter characteristics are exhibited in a SAW filter including an electrode pattern deposited on a piezoelectric substrate bonded directly to an anti-reflective layer, wherein the anti-reflective layer is bonded to a carrier through an adhesive layer such that a preselected thickness of the anti-reflective layer is sufficient for enhancing an acoustic match between the piezoelectric substrate and the adhesive layer.
    Type: Grant
    Filed: March 5, 2009
    Date of Patent: October 11, 2011
    Assignee: Triquint Semiconductor, Inc.
    Inventors: Benjamin P. Abbott, Robert Aigner, Julien Gratier, Taeho Kook
  • Publication number: 20110241020
    Abstract: Embodiments of a high electron mobility transistor with recessed barrier layer, and methods of forming the same, are disclosed. Other embodiments are also be described and claimed.
    Type: Application
    Filed: March 31, 2010
    Publication date: October 6, 2011
    Applicant: TRIQUINT SEMICONDUCTOR, INC.
    Inventor: Paul Saunier