Patents Assigned to TSMC Solid State Lighting Ltd.
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Patent number: 9214613Abstract: A system and method for manufacturing a light-generating device is described. A preferred embodiment comprises a plurality of LEDs formed on a substrate. Each LED preferably has spacers along the sidewalls of the LED, and a reflective surface is formed on the substrate between the LEDs. The reflective surface is preferably located lower than the active layer of the individual LEDs.Type: GrantFiled: May 2, 2014Date of Patent: December 15, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Ding-Yuan Chen, Chia-Lin Yu, Chen-Hua Yu, Wen-Chih Chiou
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Patent number: 9188288Abstract: A lighting apparatus includes a substrate, a plurality of light-emitting dies, a continuous encapsulation structure, and a gel. The plurality of light-emitting dies are disposed on the substrate and spaced apart from one another. The light-emitting dies each are covered with a respective individual phosphor coating conformally. The continuous encapsulation structure has a curved surface disposed over the substrate and encapsulates the light-emitting dies within. The gel is disposed between the encapsulation structure and the phosphor coating for each of the light-emitting dies. The gel contains diffuser particles. The lighting apparatus has a substantially white appearance in an off state when the plurality of light-emitting dies is turned off.Type: GrantFiled: September 28, 2012Date of Patent: November 17, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Hsiao-Wen Lee, Chi-Xiang Tseng, Yu-Sheng Tang, Jung-Tang Chu
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Patent number: 9184334Abstract: A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.Type: GrantFiled: August 5, 2014Date of Patent: November 10, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Shouli Steve Hsia, Chih-Kuang Yu, Ken Wen-Chien Fu, Hung-Yi Kuo, Hung-Chao Kao, Ming-Feng Wu, Fu-Chih Yang
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Patent number: 9140421Abstract: A lighting device includes a first heat sink having a first surface and a second surface opposite the first surface, a second heat sink having a third surface and a fourth surface opposite the third surface. The third surface of the second heat sink is bonded to the second surface of the first heat sink. The lighting device further includes a plurality of first light emitting diode (LED) modules mounted on the first surface of the first heat sink; and a plurality of second light emitting diode (LED) modules mounted on the fourth surface of the second heat sink. One or more the first LED modules generally radiates lights in a first direction. One or more the second LED modules generally radiates lights in a second direction. The first and second LED modules are covered by respective non-reflective caps. The first LED module and the second LED module are configured to be selectively turned on or off according to a predefined algorithm.Type: GrantFiled: August 12, 2011Date of Patent: September 22, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Wei-Yu Yeh, Pei-Wen Ko
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Patent number: 9099593Abstract: The present disclosure involves an illumination apparatus. The illumination apparatus includes an n-doped semiconductor compound layer, a p-doped semiconductor compound layer spaced apart from the n-doped semiconductor compound layer, and a multiple-quantum-well (MQW) disposed between the first semiconductor compound layer and the second semiconductor compound layer. The MQW includes a plurality of alternating first and second layers. The first layers of the MQW have substantially uniform thicknesses. The second layers have graded thicknesses with respect to distances from the p-doped semiconductor compound layer. A subset of the second layers located most adjacent to the p-doped semiconductor compound layer is doped with a p-type dopant. The doped second layers have graded doping concentration levels that vary with respect to distances from the p-doped semiconductor layer.Type: GrantFiled: September 14, 2012Date of Patent: August 4, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Zhen-Yu Li, Hon-Way Lin, Chung-Pao Lin, Hsing-Kuo Hsia, Hao-Chung Kuo
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Patent number: 9099632Abstract: A package structure includes: a substrate having a first side and a second side opposite to the first side; a metal layer disposed over at least a portion of the second side of the substrate; a light-reflective layer disposed over the first side of the substrate; and a photonic device bonded to the light-reflective layer from the first side. A segment of the metal layer extends through the substrate from the first side to the second side, and a portion of the substrate is completely enclosed in a cross-sectional view by the metal layer. The package structure is free of a bonding wire over the second side of the substrate.Type: GrantFiled: May 21, 2012Date of Patent: August 4, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Chyi Shyuan Chern, Wen-Chien Fu, Hsing-Kuo Hsia, Chih-Kuang Yu, Ching-Hua Chiu, Hung-Yi Kuo
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Patent number: 9048113Abstract: A lighting instrument includes: a substrate; a plurality of first light-emitting diodes (LEDs) disposed over the substrate, wherein the first LEDs each have a first value range for a light output characteristic; a plurality of second LEDs disposed over the substrate, wherein the second LEDs each have a second value range for the light output characteristic, the second value range being different from the first value range; a phosphor layer located at a distance above the first LEDs and the second LEDs; and a light-reflective layer that is disposed on a surface of the phosphor layer; wherein the first LEDs interleave with the second LEDs according to a predefined pattern.Type: GrantFiled: February 17, 2014Date of Patent: June 2, 2015Assignee: TSMC Solid State Lighting Ltd.Inventor: Chih-Lin Wang
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Patent number: 9029175Abstract: A photonic device generates light from a full spectrum of lights including white light. The device includes two or more LEDs grown on a substrate, each generating light of a different wavelength and separately controlled. A light-emitting structure is formed on the substrate and apportioned into the two or more LEDs by etching to separate the light-emitting structure into different portions. At least one of the LEDs is coated with a phosphor material so that different wavelengths of light are generated by the LEDs while the same wavelength of light is emitted from the light-emitting structure.Type: GrantFiled: November 20, 2013Date of Patent: May 12, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Hsin-Chieh Huang, Chao-Hsiung Wang
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Publication number: 20150108424Abstract: A Light-Emitting Diode (LED) is formed on a sapphire substrate that is removed from the LED by grinding and then etching the sapphire substrate. The sapphire substrate is ground first to a first specified thickness using a single abrasive or multiple abrasives. The remaining sapphire substrate is removed by dry etching or wet etching.Type: ApplicationFiled: October 18, 2013Publication date: April 23, 2015Applicant: TSMC Solid State Lighting Ltd.Inventors: Hung-Wen Huang, Hsing-Kuo Hsia, Ching-Hua Chiu
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Patent number: 9006770Abstract: A light emitting diode (LED) carrier assembly includes an LED die mounted on a silicon submount, a middle layer that is thermally conductive and electrically isolating disposed below the silicon submount, and a printed circuit board (PCB) disposed below the middle layer. The middle layer is bonded with the silicon submount and the PCB.Type: GrantFiled: May 18, 2011Date of Patent: April 14, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Wei-Yu Yeh, Pei-Wen Ko, Chih-Hsuan Sun, Hsueh-Hung Fu
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Patent number: 9000455Abstract: A shadow mask assembly includes a securing assembly configured to hold a substrate that is configured to hold a plurality of dies. The securing assembly includes a number of guide pins and a shadow mask comprising holes for the guide pins, said holes allowing the guide pins freedom of motion in one direction. The securing assembly includes a number of embedded magnets configured to secure the shadow mask to the securing assembly.Type: GrantFiled: March 10, 2013Date of Patent: April 7, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Ming-Shing Lee, Chyi-Shyuan Chern, Hsin-Hsien Wu, Yung-Chang Chen, Ming-Hua Lo, Chu-Ching Tsai
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Patent number: 8999770Abstract: A semiconductor structure includes a module with a plurality of die regions, a plurality of light-emitting devices disposed upon the substrate so that each of the die regions includes one of the light-emitting devices, and a lens board over the module and adhered to the substrate with glue. The lens board includes a plurality of microlenses each corresponding to one of the die regions, and at each one of the die regions the glue provides an air-tight encapsulation of one of the light-emitting devices by a respective one of the microlenses. Further, phosphor is included as a part of the lens board.Type: GrantFiled: July 24, 2013Date of Patent: April 7, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Tien-Ming Lin, Chih-Hsuan Sun, Wei-Yu Yeh
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Patent number: 8993447Abstract: An apparatus includes a wafer with a number of openings therein. For each opening, an LED device is coupled to a conductive carrier and the wafer in a manner so that each of the coupled LED device and a portion of the conductive carrier at least partially fill the opening. A method of fabricating an LED device includes forming a number of openings in a wafer. The method also includes coupling light-emitting diode (LED) devices to conductive carriers. The LED devices with conductive carriers at least partially fill each of the openings.Type: GrantFiled: April 8, 2013Date of Patent: March 31, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Hsing-Kuo Hsia, Chih-Kuang Yu, Hung-Yi Kuo, Chyi Shyuan Chern
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Patent number: 8981534Abstract: The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from the back side of the substrate. The openings collectively define a pattern on the back side of the substrate from a planar view. In some embodiments, the substrate is a silicon substrate or a silicon carbide substrate. Portions of the silicon substrate vertically aligned with the openings have vertical dimensions that vary from about 100 microns to about 300 microns. A III-V group compound layer is formed over the front side of the silicon substrate. The III-V group compound layer is a component of one of: a light-emitting diode (LED), a laser diode (LD), and a high-electron mobility transistor (HEMT).Type: GrantFiled: September 14, 2012Date of Patent: March 17, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Zhen-Yu Li, Chung-Pao Lin, Hsing-Kuo Hsia, Hao-Chung Kuo, Cindy Huichun Shu, Hsin-Chieh Huang
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Patent number: 8981397Abstract: A device includes a textured substrate, which further includes a plurality of trenches. Each of the plurality of trenches includes a first sidewall and a second sidewall opposite the first sidewall. A plurality of reflectors configured to reflect light is formed, with each of the plurality of reflectors being on one of the first sidewalls of the plurality of trenches. The second sidewalls of the plurality of trenches are substantially free from any reflector.Type: GrantFiled: February 12, 2010Date of Patent: March 17, 2015Assignee: TSMC Solid State Lighting Ltd.Inventor: Hsin-Chieh Huang
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Patent number: 8969894Abstract: A light emitting diode (LED) with a micro-structure lens includes a LED die and a micro-structure lens. The micro-structure lens includes a convex lens portion, at least one concentric ridge structure surrounding the convex lens portion, and a lower portion below the convex lens portion and the at least one concentric ridge structure. The lower portion is arranged to be disposed over the LED die. A first optical path length from an edge of the LED die to a top center of the microstructure lens is substantially the same as a second optical path length from the edge of the LED die to a side of the micro-structure lens.Type: GrantFiled: April 15, 2011Date of Patent: March 3, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Hsiao-Wen Lee, Shang-Yu Tsai, Pei-Wen Ko
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Patent number: 8962358Abstract: The present disclosure provides one embodiment of a light-emitting structure. The light-emitting structure includes a carrier substrate having first metal features; a transparent substrate having second metal features; a plurality of light-emitting diodes (LEDs) bonded with the carrier substrate and the transparent substrate, sandwiched between the carrier substrate and the transparent substrate; and metal pillars bonded to the carrier substrate and the transparent substrate, each of the metal pillars being disposed between adjacent two of the plurality of LEDs, wherein the first metal features, the second metal features and the metal pillars are configured to electrically connect the plurality of LEDs.Type: GrantFiled: April 7, 2011Date of Patent: February 24, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Chih-Kuang Yu, Chyi Shyuan Chern
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Patent number: 8946742Abstract: The substrate with through silicon plugs (or vias) described above removes the need for conductive bumps. The process flow is very simple and cost efficient. The structures described combines the separate TSV, redistribution layer, and conductive bump structures into a single structure. By combining the separate structures, a low resistance electrical connection with high heat dissipation capability is created. In addition, the substrate with through silicon plugs (or vias, or trenches) also allows multiple chips to be packaged together. A through silicon trench can surround the one or more chips to provide protection against copper diffusing to neighboring devices during manufacturing. In addition, multiple chips with similar or different functions can be integrated on the TSV substrate. Through silicon plugs with different patterns can be used under a semiconductor chip(s) to improve heat dissipation and to resolve manufacturing concerns.Type: GrantFiled: October 4, 2010Date of Patent: February 3, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Chen-Hua Yu, Hung-Pin Chang, Yung-Chi Lin, Chia-Lin Yu, Jui-Pin Hung, Chien Ling Hwang
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Patent number: 8939611Abstract: The present disclosure involves a lighting apparatus. The lighting apparatus includes a photonic device that generates light. The lighting apparatus includes a printed circuit board (PCB) on which the photonic device is located. The lighting apparatus includes a diffuser cap having a curved profile covering the PCB and the photonic device. The diffuser cap has a textured surface for scattering light generated by the photonic device. The lighting apparatus includes a thermally conductive cup that surrounds the diffuser cap and thermal conductively coupled to the PCB. The cup has a reflective inner surface that reflects light transmitting through the diffuser cap. The lighting apparatus includes a heat dissipation structure for dissipating heat generated by the photonic device. The heat dissipation structure is thermally coupled to the cup.Type: GrantFiled: November 10, 2011Date of Patent: January 27, 2015Assignee: TSMC Solid State Lighting Ltd.Inventors: Pei-Wen Ko, Wei-Yu Yeh
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Patent number: 8921884Abstract: A lighting apparatus includes a substrate. One or more light-emitting devices are disposed over the substrate. A lens is molded over the substrate and over the one or more light-emitting devices. A recess is disposed in the lens. The recess circumferentially surrounds the one or more light-emitting devices in a top view. The recess is at least partially filled with phosphor particles.Type: GrantFiled: May 22, 2014Date of Patent: December 30, 2014Assignee: TSMC Solid State Lighting Ltd.Inventors: Ching-Yi Chen, Yu-Sheng Tang, Hao-Yu Yang, Hsin-Hung Chen, Tzu-Wen Shih