Abstract: Provided is a method of fabricating a light-emitting diode (LED) device. The method includes providing a substrate having opposite first and second sides. A semiconductor layer is formed on the first side of the substrate. The method includes forming a photoresist layer over the semiconductor layer. The method includes patterning the photoresist layer into a plurality of photoresist components. The photoresist components are separated by openings. The method includes filling the openings with a plurality of thermally conductive components. The method includes separating the semiconductor layer into a plurality of dies using a radiation process that is performed to the substrate from the second side. Each of the first regions of the substrate is aligned with one of the conductive components.

Abstract: A Light-Emitting Diode (LED) lamp includes a heat sink with a number of passive air flow ducts defined at least partially by fins of the heat sink and a cover plate over the fins. The heat sink includes a body with a cavity, a number of fins radiating outwards from the body, and a cover plate covering the fins. Each passive air flow duct includes top and bottom openings for air flow.

Abstract: A method includes providing an LED element including a substrate and a gallium nitride (GaN) layer disposed on the substrate. The GaN layer is treated. The treatment includes performing an ion implantation process on the GaN layer. The ion implantation process may provide a roughened surface region of the GaN layer. In an embodiment, the ion implantation process is performed at a temperature of less than approximately 25 degrees Celsius. In a further embodiment, the substrate is at a temperature less than approximately zero degrees Celsius during the ion implantation process.

Abstract: The present disclosure discloses an apparatus for thermally protecting an LED device. The apparatus includes a substrate. The apparatus includes a plurality of light-emitting devices disposed over the substrate. A selected one of the plurality of light-emitting devices is at least partially surrounded by the rest of the plurality of light-emitting devices. The apparatus includes a feedback mechanism electrically coupled to the selected light-emitting device. The feedback mechanism is operable to detect a change in a temperature of the selected light-emitting device. The feedback mechanism is also operable to adjust an electrical current through at least the selected light-emitting device in response to the detected change in the temperature.

Abstract: A method of forming a light-emitting device (LED) package component includes providing a substrate; forming an LED on the substrate; and lifting the LED off the substrate. A carrier wafer is provided, which includes a through-substrate via (TSV) configured to electrically connecting features on opposite sides of the carrier wafer. The LED is bonded onto the carrier wafer, with the LED electrically connected to the TSV.

Abstract: The present disclosure provides a method including providing a light-emitting diode (LED) device (e.g., a LED element and PCB) and a heat sink. The LED device is bonded to the heat sink by applying an ultrasonic energy. In an embodiment, the bonding may form a bond comprising copper and aluminum. The PCB may be a metal core PCB (MC-PCB).

Abstract: An optical emitter includes a Light-Emitting Diode (LED) on a package wafer, transparent insulators, and one or more transparent electrical connectors between the LED die and one or more contact pads on the packaging wafer. The transparent insulators are deposited on the package wafer with LED dies attached using a lithography or a screen printing method. The transparent electrical connectors are deposited using physical vapor deposition, chemical vapor deposition, spin coating, spray coating, or screen printing and may be patterned using a lithography process and etching.

Abstract: The present disclosure involves a method of packaging light-emitting diodes (LEDs). According to the method, a plurality of LEDs is provided over an adhesive tape. The adhesive tape is disposed on a substrate. In some embodiments, the substrate may be a glass substrate, a silicon substrate, a ceramic substrate, and a gallium nitride substrate. A phosphor layer is coated over the plurality of LEDs. The phosphor layer is then cured. The tape and the substrate are removed after the curing of the phosphor layer. A replacement tape is then attached to the plurality of LEDs. A dicing process is then performed to the plurality of LEDs after the substrate has been removed. The removed substrate may then be reused for a future LED packaging process.

Abstract: The present disclosure provides a light emitting diode (LED) apparatus. The LED apparatus includes an LED emitter having a top surface; and a phosphor feature disposed on the LED emitter. The phosphor feature includes a first phosphor film disposed on the top surface of the LED emitter and having a first dimension defined in a direction parallel to the top surface of the LED emitter; a second phosphor film disposed on the first phosphor film and having a second dimension defined in the direction; and the second dimension is substantially less than the first dimension.

Abstract: The present disclosure involves lighting apparatus. The lighting apparatus includes a first doped semiconductor layer. A light-emitting layer is disposed over the first doped semiconductor layer. A second doped semiconductor layer is disposed over the light-emitting layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. A photo-conversion layer is disposed over the second doped semiconductor layer and over side surfaces of the first and second doped semiconductor layers and the light-emitting layer. The photo-conversion layer has an angular profile.

Abstract: The present disclosure provides a light emitting diode (LED) apparatus. The LED apparatus includes an LED emitter having a top surface; and a phosphor feature disposed on the LED emitter. The phosphor feature includes a first phosphor film disposed on the top surface of the LED emitter and having a first dimension defined in a direction parallel to the top surface of the LED emitter; a second phosphor film disposed on the first phosphor film and having a second dimension defined in the direction; and the second dimension is substantially less than the first dimension.

Abstract: A shadow mask assembly includes a securing assembly configured to hold a substrate that is configured to hold a plurality of dies. The securing assembly includes a number of guide pins and a shadow mask comprising holes for the guide pins, said holes allowing the guide pins freedom of motion in one direction. The securing assembly includes a number of embedded magnets configured to secure the shadow mask to the securing assembly.

Abstract: A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer.

Abstract: A light-emitting diode (LED) device is provided. The LED device is formed by forming an LED structure on a first substrate. A portion of the first substrate is converted to a porous layer, and a conductive substrate is formed over the LED structure on an opposing surface from the first substrate. The first substrate is detached from the LED structure along the porous layer and any remaining materials are removed from the LED structure.

Abstract: The present disclosure provides a light emitting diode (LED) apparatus. The LED apparatus includes an LED emitter having a top surface; and a phosphor feature disposed on the LED emitter. The phosphor feature includes a first phosphor film disposed on the top surface of the LED emitter and having a first dimension defined in a direction parallel to the top surface of the LED emitter; a second phosphor film disposed on the first phosphor film and having a second dimension defined in the direction; and the second dimension is substantially less than the first dimension.

Abstract: A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer.

Abstract: The present disclosure provides a lighting instrument. The lighting instrument includes a recessed light fixture, for example a troffer light or a batten light. The light fixture includes a plurality of light-emitting diode (LED) devices located on a board. The light fixture also includes a diffuser cap located on the board and housing the LED devices therein. The diffuser cap includes a plurality of coating regions. Each coating region is coated by a film containing white particles. The white particles can reflect and diffuse light emitted by the LED devices. The film in each coating region has a different white particle concentration level than other coating regions.

Abstract: The embodiments of a light-emitting-diode-based (LED-based) light bulb and an LED assembly described provide mechanisms of reflecting generated by LED emitters toward the back of the LED-based light bulb. An upper substrate and a lower substrate are used to support upper and lower LED emitters. A slanted and reflective surface between the upper substrate and the lower substrate reflects light generated by the lower LED emitters toward the backside of the LED-based light bulb.

Abstract: The present disclosure involves a light-emitting diode (LED) packaging structure. The LED packaging structure includes a submount having a substrate and a plurality of bond pads on the substrate. The LED packaging structure includes a plurality of p-type LEDs bonded to the substrate through a first subset of the bond pads. The LED packaging structure includes a plurality of n-type LEDs bonded to the substrate through a second subset of the bond pads. Some of the bond pads belong to both the first subset and the second subset of the bond pads. The p-type LEDs and the n-type LEDs are arranged as alternating pairs. The LED packaging structure includes a plurality of transparent and conductive components each disposed over and electrically interconnecting one of the pairs of the p-type and n-type LEDs. The LED packaging structure includes one or more lenses disposed over the n-type LEDs and the p-type LEDs.

Abstract: A leadless package and method for manufacturing silicon based leadless QFN/SON compatible packages are described. In addition the package allows for hermetic sealing of devices while maintaining electrical and optical access. Micro-vias with feed-through metallization through a silicon structure facilitates a surface mount technology-compatible silicon package with bottom SMT pads and top surface device integration. Sloped edges on the SMT side enable solder filleting for post solder inspection. Hermetic seal can be attained for example using anodic bonding of a glass lid or using metal soldering. Metal soldering enables the use of solder bumps to provide electrical connections for the package to the lid with integrated device functionality used for sealing. Hermetically sealed silicon packages eliminates the need for an extra packaging layer required in plastic packages and provides a standard interface for enclosing one or more discrete devices.