Abstract: In order to suppress a doublet structure in a carbon spectrum due to J-coupling between carbon and hydrogen spins in compounds containing at least one CH group, a first magnetic rf field having a frequency equal to the Larmor frequency of carbon is generated, after which a second magnetic rf field having the Larmor frequency of the hydrogen in the relevant CH group is applied to the examination zone, and the spin resonance signal generated is detected. Decoupling is achieved with a reduced rf load in that a magnetic rf pulse having the duration T and the amplitude B.sub.p is generated a predetermined period of time dt after the end of excitation of the carbon, after which the amplitude of the rf field is immediately reduced to a value B.sub.c and the spin resonance signal is detected, the parameters dt, Bc and Bp being chosen so that the modulation of the spin resonance signal caused by the J-coupling is exactly eliminated.

Abstract: A photomultiplier tube comprising a photocathode (10), focusing electrodes (12, 12') and a fast multiplier structure (20) having a large input surface relative to the photocathode and comprising at least one input dynode (21). According to the invention, said photomultiplier tube comprises, between the photocathode (10) and said focusing multiplier structure (20), a first multiplier stage (30) comprising, in succession and viewed from the assembly consisting of the photocathode (10) and the focusing electrodes (12, 12'), a grid (31), a first multiplier dynode (32) of the apertured-plate type, and an extracting grid (33) having the same pattern as said first multiplier dynode (32), the output of the extracting grid (33) being coupled to said input dynode (21) of the multiplier pattern by means of a focusing electrode (40).

Abstract: An electric steam iron has two heating elements (21, 41), each of high wattage. The elements heat the soleplate (20) and a water tank of a steam generator (40). The elements are connected in such a way that they cannot be switched on simultaneously. The quantity of steam which is delivered by the iron during ironing is regulated by an electronic circuit (FIG. 2) which controls the heating of the steam generator. The heating takes place in a manner in which the steam delivery varies depending on the steam requirements during an ironing cycle (FIGS. 4a-4e). The steam generator can be designed as a pressure tank in which a buffer stock of steam is formed during an interruption in ironing, so that at the beginning of an ironing cycle a large quantity of steam can be delivered and at the same time the soleplate can be heated up.

Abstract: Apparatus for rearranging signal channels of a multi-loop TDM transmission system, each loop having a plurality of high rate channels CI in successive base frames, portions of successive base frames forming a plurality of low rate channels CS. The system capacity can thereby readily be expanded by including additional loops. In order to rearrange a plurality p of asynchronous TDM signals into the correct channels to constitute a plurality of synchronous outgoing TDM signals, the apparatus includes respective units SRI for providing synchronization and rearrangement of the signals in the high rate (CI) channels. The p outputs of the SRI units are connected to p respective inputs of an interloop switching unit CII for switching the CI channels, and also to p respective inputs of an interloop switching unit RCIS which rearranges and switches the CS channels.

Abstract: A magnetic resonance method for in vivo measurement of water-suppressed localized proton spectra, and device for performing the method, utilizes a frequency selective adiabatic fast passage pulse to achieve water suppression. Subsequent to a waiting period after the adiabatic pulse, during which selectively excited water magnetization has longitudinally relaxed until the longitudinal water magnetization has reached an amplitude of zero, an echo resonance signal in which water has been suppressed is generated by means of a volume-selective Hahn spin echo sequence. A spectrum is determined from the echo resonance signal by way of Fourier transformation. The method is particularly suitable for in vivo use in conjunction with surface coils where the rf electromagnetic field is liable to exhibit a substantial inhomogeneity.

Abstract: A depilation apparatus is provided comprising at least one pair of circumferentially cooperating depilation rollers (3, 4, 5, 6) which are arranged at the location of an opening (2) in the apparatus and which are rotatably supported and arranged to be driven in opposite directions of rotation, and also comprising a shear plate (11) which is arranged at the location of the opening in the apparatus, which covers the depletion rollers, and which is formed with elongate hair-entry apertures (12, 13, 14, 15, 16, 17) at the location of the depilation rollers, the elongate hair-entry apertures in the shear plate extending in the longitudinal direction of the depilation rollers and at least up to the ends of the depilation rollers.

Abstract: A static RAM memory is optimized for speed. The memory is divided into major memory matrices and each major memory matrix is divided into memory blocks. The memory blocks are divided in groups that per group have address bits in common, which however are per group coupled to separate pads or sets of pads. These pads are interconnected on the package to common package pins.

Abstract: A capacitor having at least one dielectric layer present between each time a flat electrode and an opposite electrode, in which the electrode(s) and the opposite electrode(s) are staggered with respect to each other so that in the plane of each time one of two opposing end faces of the capacitor they terminate in the same plane and are contacted there by means of external connection contacts, in which at least one electrode in its end area adjacent the external connection contact associated with it comprises a window and that the non-contacted end(s) of the opposite electrode(s) extend(s) in the area of the window(s).

Abstract: A phase comparison circuit includes a double balanced mixer stage which receives a sine signal as well as this sine signal in anti-phase and a square-wave switching signal of the same nominal frequency, two active current mirror circuits are used which incorporate at least two common negative feedback circuit elements, the first of which is operative in the input-sided negative feedback of the first current mirror circuit and in the output-sided negative feedback of the second current mirror circuit and the second of which is operative in the reverse way. The two current mirror circuits are alternately connected to the two balanced mixer stages by means of a switching stage during the half cycle clock of the switching signal.

Abstract: A method and system for transmitting data packets in time slots on a communications network having first and second unidirectional buses which are oppositely directed and a plurality of access units coupled there-between. To form a distributed queue of all data packets, which are to be transmitted on the first bus, each access unit establishes a queue of the data packets therein, transmits a request flag on the second bus for each data packet in the queue in such access unit, keeps count of the number of request flags passing such access unit on the second bus, and transmits the data packet at the head of its queue after a predetermined number of empty time slots has passed such access unit on the first bus.

Abstract: A memory cell is read by first charging a pair of bit lines to given positive potentials and then raising the potential of a cell access line to render access transistors conductive. The cell supply voltage is sufficient to cause substantial hot-electron stress in the n-channel transistors of the cell if it were applied directly across their source-drain paths while they were conductive. However, a limit is imposed on the maximum positive potentials which are applied to the bit lines from the exterior, and on the minimum ratio of the sizes of the cell n-channel amplifier transistors to the sizes of the access transistors, taking into account the threshold voltages of the amplifier transistors, and as a result substantial hot-electron stress does not occur. Substantial hot-electron stress is also prevented during a write operation by arranging that this is effectively preceded by a read operation.

Abstract: An all-pass type active circuit, realizable in the 8-12 GHz band has an inverting stage formed by a field effect transistor Q.sub.1, to whose gate the input signal V.sub.E is applied through a resistor R constituting the resistance of an RC network, and whose gate-source capacitance C.sub.GS is constitutes the capacitance C of the RC network. The parameters of a negative feedback branch inserted between the input V.sub.E and the output V.sub.S of the inverter, including a resistor R.sub.0 and a transmission line L.sub.0, are chosen so that the elements of Z=R.sub.0, l=.tau.v, R.sub.0 =2/G.sub.M0, where Z is the characteristic impedance of L.sub.0, l is the length of L.sub.0, v is the phase velocity of propagation, .tau. is the transit time of the electrons under the gate of Q.sub.1 and G.sub.M0 is the transconductance of Q.sub.1. The phase shift between V.sub.E and V.sub.S at an operating frequency .omega. is a function of the time constant .tau. of the RC network.

Abstract: A shaving apparatus comprises an external shaving member having hair-entry apertures and an internal shaving member which is drivable relative to the external shaving member and which comprises a carrier for at least one cutter, a portion of the cutter being disposed in a recess in the carrier. The cutter is supported by the carrier by means of three supporting projections which are not disposed in line.

Abstract: The invention relates to a method of manufacturing a heating element from a flat metal foil blank in which strips (1) are formed whose ends (2) are interconnected by connecting portions (3, 4) with alternate connecting portions disposed at opposite ends of the strips so as to form a meandering pattern and to a heating appliance incorporating such a heating element. In order to make such a foil heating element suitable for use in appliances in which an air stream to be heated passes over the foil heating element the connecting portions (3, 4) are bent in such a way that the strips (1) are tilted out of the plane of the foil blank. Preferably the strips are disposed an an angle .alpha. between 45.degree. and 90.degree. relative to the plane.

Abstract: A lateral MOS transistor includes a semi-insulating field plate adjacent the surface of the device, over the drift region and extending laterally from the drain electrode toward the gate and source electrodes of the transistor. The field plate is connected at one end to the drain electrode, and at the other end to either the gate electrode of the source electrode. In order to improve the turn-on characteristics of the transistor, a surface-adjoining semiconductor top layer is provided in the drift region of the device, between the channel region and the drain region. This top layer is connected to the channel region at selected locations, and serves to improve device turn-on performance by causing a more rapid decrease in ON resistance at turn-on.

Abstract: A semiconductor device includes a silicon layer of a first conductivity type, which is disposed on a dielectric substrate and in which at least two zones of a semiconductor circuit element of a second opposite conductivity type and a contact zone having the same conductivity type as, but a higher doping concentration than the silicon layer are provided, which zones adjoin a surface of the silicon layer. According to the invention, the contact zone extends below the zones of the field effect transistor. This semiconductor device has the advantage that it can be manufactured in a very simple manner. In a method of manufacturing this device, in a silicon layer of a first conductivity type disposed on a dielectric substrate are formed a contact zone having the same conductivity type as, but a higher doping concentration than the silicon layer and at least two zones of a semiconductor circuit element of a second opposite conductivity type.

Abstract: An integrated matrix memory includes standard sub-blocks and a redundant block. Each of the standard sub-blocks has a fixed number of standard sub-blocks, and the redundant block has one or more redundant sub-blocks. For addressing there is provided a detector for the address of a faulty standard sub-block. In that case a redundant sub-block is selected. Selection is realized by way of a sub-bus which forms part of the data path. Thus, a redundant system is achieved in which delay is minimized.

Abstract: A logic analyzer for plural input channels generates trigger signals for first and second triggering modes selected by a multiplexer. In the first mode, a channel selector produces a detection signal in the form of a pulse when the plural input channels simultaneously have logic states matching a reference combination input to the channel selector. In the second mode, the channel selector produces a detection signal in the form of a pulse corresponding to the logic state of a channel selected by a channel selection signal input to the channel selector. The first mode triggering signal exhibits a digital transition when the pulse endures at least as long as a target time period determined by a target count times the interval between clock pulses while the second mode trigger signal exhibits a digital transition when the pulse terminates before enduring for the target time period.

Abstract: The invention relates to a plug pin which receives an LWG coaxially and which consists of a hard basic material having a low coefficient of thermal expansion. An accurate working of the convex surface of the plug pin is possible without any problems in that its outer convex surface is provided on at least a part of its length with a coating, having a thickness of less than 300 .mu.m, in particular less than 150 .mu.m, of a material which can be subjected to a chipping treatment better than the basic material.

Abstract: A semiconductor device includes at least one field effect transistor integrated monolithically on a substrate with a decoupling diode between a d.c. supply conductor and a ground conductor. The transistor is preferably a MESFET formed in a first semiconductor layer of the n-type preferably made of a III-V material. According to the invention, the decoupling diode is constituted by the ground conductor forming a Schottky junction of large surface area polarized in the opposite sense with a second semiconductor layer of the n-type, the supply conductor being resistively connected to the second semiconductor layer. According to a preferred embodiment, the second layer also comprises the resistive load of the transistor.