Abstract: A gate charge and discharge adjustment regulating circuit for a gate control device belongs to the power electronics technology field. The switch control signal is connected to the control terminals of the four analog switches. The gate control signal is loaded on the gate of the correct field effect transistor under the action of the four analog switches to control the switching-on degree so as to achieve the purpose of adjusting the gate driving signal current, that is, regulating the gate charge and discharge currents of the gate control device to realize the change of the switching characteristics and conduction characteristics. The switch control signal is connected to the input terminal of the gate driving module to control the gate driving module to generate the gate driving signal.

Abstract: The present invention belongs to the field of semiconductor technology and relates to a polarization-doped enhancement mode HEMT device. The technical solution of the present invention grows the first barrier layer and the second barrier layer that contain gradient Al composition sequentially on the buffer layer. The gradient trends of the two layers are opposite. The three-dimensional electron gas (3DEG) and the three-dimensional hole gas (3DHG) are induced and generated in the barrier layers due to the inner polarization difference respectively. A trench insulated gate structure is at one side of the source which is away from the metal drain and is in contact with the source. First, since the highly concentrated electrons exist in the entire first barrier layer, the on-state current is improved greatly. Second, the vertical conductive channel between the source and the 3DEG are pinched off by the 3DHG, so as to realize the enhancement mode.

Abstract: The present invention provides a miniature wideband antenna for 5G, which includes a dielectric substrate, a coplanar waveguide feed structure on a front of the dielectric substrate, a main radiator, a second and third radiators and a first radiator on a back of the dielectric substrate. The antenna is small in size with operation band of 3 GHz-30 GHz which covers the various 5G frequency band and covers the current wireless modes of Wi-MAX, W-LAN, UWB and so on. The antenna guarantees future compatibility for various complicated communication modes and has good perspectives for many applications. Based on the antenna, the double-unit and four-unit MIMO antenna adopts orthogonal polarization and metamaterial unit. Thus, high unit separation is achieved without increase on the size of the antenna unit. The present invention has wide applications in small mobile device such as cell phone and laptop.

Abstract: The present invention relates to a lateral high-voltage device. The device includes a dielectric trench region. A doping-overlapping structure with different doping types alternating mode is provided at least below, on a left side of, or on a right side of the dielectric trench region. The device also includes a dielectric layer, a body field plate, a polysilicon gate, a gate oxide layer, a first N-type heavy doping region, a second N-type heavy doping region, a P-type heavy doping region, a P-well region, the first N-type doping pillar, the second N-type doping pillar, the third N-type doping pillar, the first P-type doping pillar, and the second P-type doping pillar. The invention adopts a dielectric trench region in the drift region to keep the breakdown voltage BV of the device while reducing the surface area of the device, and effectively reducing the device's specific On-Resistance RON,sp.

Abstract: The present invention provides a method for associating a user with a base station based on backhaul capacity in heterogeneous cellular network. First, an available base station set is obtained through the SINRs, and the downlink data rate between the new user and each base station in the available base station set is calculated according to the SINR between them; Then, the usable link capacity factor of each base station is calculated based on the used link capacity and the backhaul capacity; Finally, the optimal base station is selected for the new user i under a constraint which is constructed by the bandwidth of the new user and the usable link capacity factor. The backhaul capacity of each base station is taken into account in selecting the optimal base station to associate with for the new user, thus the real time of user association and the overall performance of heterogeneous cellular network can be guaranteed.

Abstract: A low-dropout regulator with super transconductance structure relates to the field of power management technology. The super-transconductance structure refers to the circuit structure in which the voltage signal is converted into a current signal and amplified with a high magnification. The error amplifier EA in the present invention uses the super transconductance structure. The differential input pair of the error amplifier EA samples the difference between the feedback voltage VFB and the dynamic reference voltage VREF1. The difference is converted into a small signal current, which goes through a first-stage of current mirror to be amplified by K1, and through a second-stage of current mirror to be amplified by K2. The amplified signal is used to regulate the gate of the adjustment transistor MP. The error amplifier EA with the super transconductance structure is used to expand the bandwidth of the error amplifier EA.

Abstract: A resistorless CMOS low power voltage reference circuit is provided. The start-up circuit is used to prevent the circuit to stay in the zero state and stop working when the circuit gets out of the zero state. The self-biased VPTAT generating circuit generate the voltage VPTAT which has positive temperature coefficient. The square-law current generating circuit generates a square-law current which is proportional to ?T2 through the VPTAT. Finally, the reference voltage VREF is obtained by introducing the square-law current into the reference voltage output circuit. The reference voltage VREF of this application can realize approximative zero temperature coefficient in the temperature range of ?40° C.˜ 100° C. This application improves temperature characteristic which may be poorer due to temperature nonlinearity of carrier mobility based on the traditional subthreshold reference. This application can reduce the power consumption from ?W level to nW level and realize low power consumption.

Abstract: The present invention relates to the field of semiconductor switches, and relates more particularly to a GaN-based bidirectional switch device. The present invention provides a gate-controlled tunneling bidirectional switch device without Ohmic-contact, which avoids a series of negative effects (such as current collapse, incompatibility with traditional CMOS process) caused by the high temperature ohm annealing process. Each insulated gate structure near schottky-contact controls the band structure of the schottky-contact to change the working state of the device, realizing the bidirectional switch's ability of bidirectional conducting and blocking. Due to the only presence of schottky in this invention, no heavy elements such as gold is needed, and this device is compatible with traditional CMOS technology.

Abstract: A low-dropout regulator with super transconductance structure relates to the field of power management technology. The super-transconductance structure refers to the circuit structure in which the voltage signal is converted into a current signal and amplified with a high magnification. The error amplifier EA in the present invention uses the super transconductance structure. The differential input pair of the error amplifier EA samples the difference between the feedback voltage VFB and the dynamic reference voltage VREF1. The difference is converted into a small signal current, which goes through a first-stage of current mirror to be amplified by K1, and through a second-stage of current mirror to be amplified by K2. The amplified signal is used to regulate the gate of the adjustment transistor MP. The error amplifier EA with the super transconductance structure is used to expand the bandwidth of the error amplifier EA.

Abstract: The present invention provides an M2M data processing method. The method includes: receiving a registration request sent by an M2M device; obtaining a filled capability model according to a capability model and capability information of the M2M device after authentication on the registration request succeeds, where the capability model includes three types of capabilities: a communication capability, a control capability, and a measurement capability, each capability is divided into multiple subentries, and the filled capability model describes at least one subentry corresponding to three types of capabilities of the M2M device; updating an overall capability model according to the filled capability model, where capability information of all registered M2M devices managed by an M2M service platform is recorded in the overall capability model in a type division manner of the capability model.

Abstract: The present invention discloses an unconditional secure communication method based on beam-forming and security code, which comprises the following steps of: Legitimate users send to the signal pie-encoded and modulated, meanwhile eavesdropper receives signals and calculates the bit error rate; computing security coding parameters, legitimate received users send pilot sequence, and legitimate sending users estimate legitimate channel, and extract information on legal channel coding and modulating signal was SVD pre-coding and sending; the signal was decoded, that will be judgment and demodulation then the signal after decoding do security code is transmitted to message or tapping, due to lack of legal channel information, eavesdropper cannot lift pre-coding processing of the received signal with the high bit error rate. This method can establish advantages channel of the wiretap model channel and to ensure that legitimate users can receive signals at the lower bit error rate.

Abstract: The invention discloses a monitoring system for estimation of phase conductor parameters of overhead high voltage transmission lines. Particularly, these parameters include electric current, conductor clearance from ground and wind induced conductor motion. This is realized by utilizing magnetic field sensing at various points or of various components with state of art Tunnel Magneto resistive sensors. The measured data is then divided into two groups, where one group performs the reconstruction using magnetic field and the other group validates the reconstructed results. For each group, initial conductor to sensor position coefficients are stored in two different sensitivity matrices in memory. For a change in conductor spatial position, the sensitivity matrices are altered which is estimated for each group and then validated by comparison. Errors in the reconstruction process are minimized by sensor placement at optimal points which ensures the condition number remains close to unity.

Abstract: A wavy micro gas chromatography column includes a silicon substrate and a bonded glass cover. A micro channel having a rectangular cross section is etched on the silicon substrate and coated with a stationary phase film. A projection figure of the micro channel on the silicon substrate includes multiple regular wavy curves. Each wavy curve is formed through alternately connecting first upper arcs with first lower arcs. Because the groove has a curving structure, the carrier gas velocity is decreased as the increase of the arc angle, resulting in an improvement of the flow uniformity at the zones between two adjacent bends but also an enlarging nonsymmetric distribution at the bends. Thus, an optimal curving structure can make the overall flow more even, and in turn achieve a better separation performance compared to the straight channel columns. Meanwhile, a wavy channel realizes a longer column length on a given area.

Abstract: The present invention relates to the technical field of the power semiconductor device relates to a reverse conducting insulated gate bipolar transistor (RC-IGBT). The RC-IGBT comprises a P-type region, an N-type emitter region, a P-type body contact region, a dielectric trench, a collector region, and an electrical filed cutting-off region. The beneficial effect of the present invention is that, when compared with traditional RC-IGBT, the IGBT of the present invention can eliminate negative resistance effect and effectively improve the performance of forward and reverse conduction.

Abstract: The present invention relates to the field of semiconductor technology, particularly to a super-junction schottky diode. According to the present invention, the effective area of schottky junction is increased by forming the schottky junction in the trench located in the body of the device. Therefore, the current capacity of this novel schottky diode can be greatly improved. In addition, a super-junction structure is used to improve the device's reverse breakdown voltage and reduce the reverse leakage current. The super-junction schottky diode provided in the present invention can achieve a larger forward current, a lower on-resistance and a better reverse breakdown characteristic.

Abstract: Edge termination structures for power semiconductor devices (or power devices) are disclosed. The purpose of this invention is to reduce the difficulty of deep trench etching and dielectric filling by adopting an inverted trapezoidal trench. In order to save the area of edge termination and get a high blocking voltage on condition that the angle between the sidewall of the trench and horizontal is large, fixed charges are introduced at a particular location in the trench. Due to the Coulomb interaction between the ionized impurity in the drift region and the fixed charges, the depletion region of the terminal PN junction can extend fully, which relieves the concentration of electric field there. Therefore, the edge termination can exhibit a high breakdown voltage near to that of the parallel plane junction with a smaller area and the reduced technical difficulty of deep trench etching and dielectric filling.

Abstract: A light splitting module for obtaining spectrums of an object to be tested is disclosed, which sequentially includes a light entrance window, a diffuser and a filter array along a light entrance direction, wherein the filter array is an angle modulated filter array which has multiple subareas and includes multiple filters with different center wavelengths respectively corresponding to the subareas. Also, a dual-mode multiplexing optical device is disclosed, which includes the light splitting module, an illumination module and a light field imaging module, can realize the integration of spectral detection and light field imaging, so it can be applied to material spectral detection, digital image detection and digital focusing for obtaining high-resolution imaging results; and simultaneously, the modules of the device are detachable, so that users can use the device as required.

Abstract: A spatial terahertz wave phase modulator based on the high electron mobility transistor is provided. The phase modulator combines the quick-response high electron mobility transistor with a novel metamaterial resonant structure, so as to rapidly modulate terahertz wave phases in a free space. The phase modulator includes a semiconductor substrate, an HEMT epitaxial layer, a periodical metamaterial resonant structure and a muff-coupling circuit. A concentration of 2-dimensional electron gas in the HEMT epitaxial layer is controlled through loading voltage signals, so as to change an electromagnetic resonation mode of the metamaterial resonant structure, thereby achieving phase modulation of terahertz waves. The phase modulator has a phase modulation depth of over 90 degrees within a large bandwidth, and a maximum phase modulation depth is about 140 degrees. Furthermore, the phase modulator is simple in structure, easy to machine, high in modulation speed, convenient to use, and easy to package.

Abstract: A method for distributedly measuring polarization transmission matrices of an optical fiber includes steps of: inputting a fully polarized pulse into the optical fiber with linear birefringence only; and demodulating polarization states of Rayleigh backscattered light at different points on the optical fiber from a pulse input end; after demodulating, dividing the polarization states of the Rayleigh backscattered light into Q groups in sequence, wherein every three polarization states are divided into one group; calculating a transmission matrix of Group N; and solving the equation set using a numerical analysis method for obtaining multiple solutions, and screening the multiple solutions according to characteristics of the polarization transmission matrix, wherein each time of screening provides a unique solution Mx(N) of the equation set; continually updating MA values for iteration, so as to obtain the distribution of polarization transmission matrices of the optical fiber.

Abstract: The present invention discloses a method for retrieving atmospheric aerosol based on statistical segmentation. Firstly a multi-band remote sensing image including an apparent reflectance and an aerosol optical thickness look-up table corresponding to a retrieval band is obtained, then pixels are partitioned and screened according to apparent reflectance segments of a mid-infrared 2.1 micrometer band. After that the retained pixel sets are further partitioned and screened according to the apparent reflectance segments of the mid-infrared 1.6 micrometer band. Finally the obtained pixel sets are partitioned into two categories according to the pixel number, one category including pixels having more pixels, the other including those with less pixels. The category with more pixels is taken as the reference part for retrieval.