Abstract: A measuring instrument for optical inspection of an object includes a light source for illuminating an object; a detector; an illuminating beam path extending from the light source to the object; a detection beam path extending from the object to the detector; an illuminating optics disposed in the illuminating beam path and/or an imaging optics disposed in the detection beam path for imaging the object onto the detector; a position evaluation device for determining a distance between two points of the object; and an optical device for imposing a profile of a continuously monotonic function on an intensity of light from the light source. The optical device is disposed in at least one of a pupil plane of the imaging optics, a pupil plane of the illuminating optics, and a plane in the illuminating or imaging beam path conjugate with the pupil plane of the imaging optics or the pupil plane of the illuminating optics.

Abstract: A method is disclosed for eliminating sources of error in the system correction of a coordinate measuring machine. Herein, a number j of reference structures 33 on a rigid reference object 30 are measured in a starting orientation k=0, and the starting coordinates and the reference coordinates of the reference structures 33 on the reference object 30 are determined in a number k>3 of mutually different orientations.

Abstract: A method of determining geometric parameters of a wafer (16) is disclosed. For this purpose, the wafer (16) is inserted in a wafer holder (30). The wafer holder (30) is equipped with at least three mechanical contacting elements (22). The wafer is in mechanical contact with the contacting elements (22). The contacting elements (22) are distributed on the wafer holder (30) in such a way that they define a geometric figure which is configured such that the center point (40) of the wafer (16) comes to lie within the geometric figure. The position of each contacting element (22) is determined. Each desired geometric parameter of the wafer (16) is then calculated from the position of the contacting elements (22).

Abstract: An apparatus (1) for measuring structures (3) on a mask (2) and for calculating structures in a photoresist on a wafer resulting from the structures (3) on the mask (2) is disclosed, wherein the apparatus (1) comprises at least one incident-light illumination means (14) and/or one transmitted-light illumination means (6), wherein the apparatus (1) comprises at least one imaging optics (9) and a detector (11) of a camera (10) for imaging the structures (3) on the mask (2), wherein a first computer program (17) is associated with the detector (11) of the camera (10) and provided for determining the position and/or the dimension of the structure (3) on the mask (2). A method for measuring structures (3) on a mask (2) and for calculating structures in a photoresist on a wafer to be expected from the structures (3) on the mask (2) is also disclosed.

Abstract: A method for acquiring high-resolution images of defects on the upper surface of the wafer edge is disclosed. For this purpose, first the position of at least one defect on the upper surface of the wafer edge is determined. The thus determined position of the defect is stored. Then the wafer is transferred into device for micro-inspection, in which the defect is examined more closely and imaged. The images acquired in the device for micro-inspection are deposited in a directory.

Abstract: A test mask 1 for microscopy is disclosed, which is formed on a substrate of quartz. The test mask 1 comprises a multiplicity of sub-masks 4, which are implemented such that each sub-mask 4 comprises structures which differ within a sub-mask 4 with regard to form and size. In addition, the structures of the individual sub-masks 4 are designed for optical or particle optical measurements according to size.

Abstract: Device for measuring the position of a structure on an object 30 with at least one laser interferometer system 29 to determine a positional displacement of the object 30 in at least one spatial direction, whereby the object is placed on a stage which is translatable in the X and Y coordinate direction An illumination device is provided, which illuminates the structures to be measured. The structure is imaged on a detector 34 via a high-resolution microscope optics in incident light and/or transmitted light in the near UV spectral range. The illumination device is an excimer laser, a frequency multiplied solid-state or gas laser, or an excimer lamp.

Abstract: A method and an apparatus for inspecting a surface of a wafer disclosed. At least one incident-light illuminator is provided to illuminate an area of the surface of the wafer in a first and a second illumination mode, in particular a bright-field and a dark-field illumination. At least one image detector is provided to detect an image of the illuminated area. A storage device is used for storing values on the intensity and the color of an optimized illumination of each incident-light illumination mode.

Abstract: An apparatus for inspecting a wafer, comprising a first illuminator for radiating an illumination beam in a first illumination beam path onto a surface of the wafer and being configured as continuous light source; a second illuminator for radiating an illumination light beam in a second illumination beam path onto a surface of the wafer and being configured as continuous light source; a first detector means defining a first detection beam path; a second detector means defining a second detection beam path, wherein the first and the second detector means have a predetermined spectral sensitivity and detect data of at least an illuminated area moveable in a scanning direction on the surface of the wafer in a plurality of different spectral ranges.

Abstract: An apparatus for inspecting a wafer, comprising at least one illuminator each arranged in an illumination beam path, wherein the at least one illuminator radiates an illumination spot onto a surface of the wafer and being a continuous light source; a detector arranged in a detection beam path has a predetermined spectral sensitivity and records data from the at least one illumination spot from the surface of the wafer; an imager generating a relative movement between the surface of the wafer and the detector, whereby in a meandering movement the illumination spot is passed across the entire surface of the wafer in the scanning direction; and the at least one illumination spot being detected in a plurality of different spectral ranges.

Abstract: A method for measuring overlay shift is disclosed. An image is acquired of at least one reference element that comprises at least one first pattern element in a first plane and at least one second pattern element in a second plane. An image of a measurement element is likewise acquired. The shift value between the reference element and measurement element is ascertained by comparing the image of the reference element with the image of the measurement element. An output on a user interface indicates whether a predefined tolerance value is being exceeded.

Abstract: To determine an edge bead removal line (17) on a wafer (10), first lines or edges (38, 40, 42, 44) in the edge area (19) of the wafer (10) are detected. A first line area (48) and a second line area (50) are defined on either side of these lines (38, 40, 42, 44). The structures (36) present in these edge areas (48, 50) are compared to each other. From the result of the comparison it is determined whether or not an edge bead removal line (17) is present.

Abstract: A method is disclosed for selecting a minimum of one wavelength 320 or a minimum of one wavelength range 206 of electromagnetic radiation to be used for object testing, whereby a first spectrum is captured or calculated on a first point of a first object 509, a second spectrum is captured or calculated on a second point of the first 509 or a second object, a difference spectrum is formed from the first and the second spectrum, and the minimum of one wavelength 320 or minimum of one wavelength range 26 is selected in the difference spectrum according to predetermined criteria; as well as a microscope 500 with means of the illumination 502, capture 503, and analysis 504, whereby the illumination means illuminate an object 509, and the capture means capture a first spectrum on a first point on a first object, the capture means capture a second spectrum on a second point of the first or on a second object, and the analysis means form a difference spectrum as a difference between the first and the second spectrum.

Abstract: A method of visualizing measuring values from recorded images of disk-like objects is disclosed. First an image is recorded of at least one disk-like object, and a great number of measuring values is generated. Each measuring value is associated with a color value. Finally a resulting image is generated wherein an area which has resulted in a measuring value on the disk-like substrate is associated with a color value selected from a predetermined palette.

Abstract: The invention refers to an apparatus and a method for measuring the height profile of a semiconductor substrate. In particular, the present invention refers to a confocal wafer inspection apparatus and a method of recording the height profile of an entire wafer by the use of a dispersive element, in front of which there is a slot-shaped aperture, and a two-dimensional detector.

Abstract: The invention concerns an apparatus for inspection of a wafer, encompassing at least two incident-light illumination devices that radiate a respective illuminating light beam which is incident obliquely onto the surface of a wafer to be inspected and respectively defines an illumination axis, an image capture device for capturing an image of the surface in a dark-field arrangement, and a wafer receiving device for receiving the wafer, on whose surface linearly extending features are configured, in a definable orientation. The apparatus is characterized in that the illumination axes are oriented perpendicular to one another, and the apparatus is designed in such a way that a projection of the respective illumination axis onto the surface of the wafer is oriented substantially perpendicular to respective linear features on the surface of the wafer. With the apparatus, macrodefects can be detected and the quality of the edge profile of features configured on the surface of the wafer can be assessed.

Abstract: A wafer handling device (10) comprises at least one tool component (12), a base rack (22) and a robot (20) for moving the wafers (14). In order to improve the accessibility of a wafer handling device (10), the robot (20) is mounted on a coupling rack (26) and with this coupling rack (26) is mounted on the base rack (22) independently of the tool component (12).

Abstract: The invention concerns an apparatus and a method for inspection of a wafer. The apparatus encompasses at least one stroboscopic incident-light illumination device for emitting a pulsed illuminating light beam onto a surface of the wafer and for illuminating a region on the surface of the wafer; and having [sic] at least one image acquisition device for acquiring an image of the respectively illuminated region on the surface of the wafer. The apparatus is characterized, according to the present invention, in that by at least one photodetection device for sensing light of the respective illuminating light beam, and a control device for controlling an image acquisition operation on the basis of the light sensed by the photodetection device, are provided. Intensity fluctuations of the light flashes of the incident-light illumination device are compensated for either by normalizing image data of the illuminated region or by controlling the duration of the light flashes.

Abstract: A method for the high-precision measurement of coordinates on a substrate is disclosed. The substrate is placed on a stage moveable in X/Y coordinate directions. First, a plurality of images of a structure on a substrate are imaged by means of a 2-dimensional detector during the relative movement of a measuring objective in Z coordinate direction and the simultaneous movement of the stage in X and Y coordinate directions.

Abstract: A method for the high-precision measurement of coordinates of at least one structure on a substrate. A stage traversable in X/Y coordinate directions is provided, which is placed in an interferometric-optical measuring system. The structure on the substrate is imaged on at least one detector (34) via a measuring objective (21) having its optical axis (20) aligned in the Z coordinate direction. The structure is imaged with the so-called Dual Scan. Systematic errors can thereby be eliminated.