Abstract: In a micro-device integration process, a donor substrate is provided on which to conduct the initial manufacturing and pixelation steps to define the micro devices, including functional, e.g. light emitting layers, sandwiched between top and bottom conductive layers. The microdevices are then transferred to a system substrate for finalizing and electronic control integration. The transfer may be facilitated by various means, including providing a continuous light emitting functional layer, breakable anchors on the donor substrates, temporary intermediate substrates enabling a thermal transfer technique, or temporary intermediate substrates with a breakable substrate bonding layer.

Abstract: A microdevice structure comprising at least part of an edge of a microdevice is covered with a metal-insulator-semiconductor (MIS) structure, wherein the MIS structure comprises a MIS dielectric layer and a MIS gate conductive layer, at least one gate pad provided to the MIS gate conductive layer, and at least one micro device contact extended upwardly on a top surface of the micro device.

Abstract: Methods and structures are disclosed for highly efficient vertical devices. The vertical device comprising a plurality of planar active layers formed on a substrate, at least one of a top layer of the plurality of the layers is formed as a plurality of nano-pillars and a passivation layer formed on a space between the plurality of the nanopillars.

Abstract: The disclosure is related to creating different functional micro devices by integrating functional tuning materials and creating an encapsulation capsule to protect these materials. Various embodiments of the present disclosure also related to improve light extraction efficiencies of micro devices by mounting micro devices at a proximity of a corner of a pixel active area and arranging QD films with optical layers in a micro device structure.

Abstract: This disclosure is related to arranging to a system comprising of backplane and micro-devices. The backplane components layers may comprise of multiple conductive layers and multiple dielectric or semiconductor layers. The system is a stacked structure The stacking structure can be used with different types of transistors and backplane including but not limited to staggered, inverted staggered, and other types In addition, touch sensing structure can be integrated into the system.

Abstract: What is disclosed is structures and methods to integrate microdevices into system or receiver substrates. The integration of microdevices is facilitated by adding staging pads to microdevices before or after transferring. Creating stages after the transfer of a first microdevice to a substrate for the subsequent microdevice transfer to the first (or the second) microdevice transfer. The stage improves the surface profile of the substrate so that next microdevice can be transferred without the first microdevice on the substrate get damaged by or interfere with the surface of the donor or transfer head. Some embodiments further relate to tiled display device and more particularly, to stacking tiles to a backplane to form the tiled display device.

Abstract: Structures and methods are disclosed for fabricating a color optoelectronic solid state array device. In one embodiment, different color devices are combined to form a color optoelectronic solid state array. The micro device array comprises stacked layers, monolithic devices and backplanes. In addition, reflectors, image sources, light sensors and dichroic mirrors have been integrated.

Abstract: The present disclosure deals with a method of integrating microdevices on a backplane using bonded pads. The process has a substrate having microdevices with bonding of selective microdevices through connecting pads on the microdevices and corresponding pads on the backplane, forming anchors and leaving the bonded selective set of microdevices on the backplane by separating the micro device substrate.

Abstract: The present disclosure relates to a solid state micro device structure that has a microdevice formed on a substrate, with p and n doped layers, active layers between at least the two doped layers, pads coupled to each doped layer, and wherein the n-doped layer is modulated to have a lower conductivity towards an edge of the device. The invention further involves, dielectric layer, conductive layer, passivation layer and MIS structure.

Abstract: A method of selectively transferring micro devices from a donor substrate to contact pads on a receiver substrate. Micro devices being attached to a donor substrate with a donor force. The donor substrate and receiver substrate are aligned and brought together so that selected micro devices meet corresponding contact pads. A receiver force is generated to hold selected micro devices to the contact pads on the receiver substrate. The donor force is weakened and the substrates are moved apart leaving selected micro devices on the receiver substrate. Several methods of generating the receiver force are disclosed, including adhesive, mechanical and electrostatic techniques.

Abstract: A vertical solid state device comprising: a connection pad; and side walls comprising a metal-insulator-semiconductor (MIS) structure; wherein a gate of the MIS structure is shorted to at least one contact of the vertical solid state device and a threshold voltage (VT) of the MIS structure is adjusted to increase the efficiency of the device.

Abstract: Systems, devices and methods for a head-mounted device are provided. In some examples, a head-mounted device comprising a frame having at least one arm, at least one display coupled at a proximity edge of the at least one arm, an electronic system coupled at a proximity another edge of the at least one arm, a data processing unit configured to send and receive data from the display, wherein the data processing unit coupled through the arm between the electronic system and the display; and an optical system configured to project an image from the display to a user's eye, wherein the optical system is mounted at the top of the display.

Abstract: Embodiments disclose methods of transferring selected microdevices on a receiver substrate. In one embodiment, a high resolution display comprising a light emitting device (LED) array may be provided to assist in transferring the microdevices. The LED array can selectively either release a layer by using light or cure a bonding layer. The pixels in the display can be turned on corresponding to a set of selected microdevices with predefined intensities to release the set of selected microdevices from the donor substrate.

Abstract: Devices and methods for patterning the vertical solid state devices are provided. In some examples, a method of fabricating micro devices comprising forming device layers on a substrate, forming a first masking layer on a top layer of the device layers, forming a second masking layer on the first masking layer; and etching the device layers using the first and second masking layers to pattern the device layers.

Abstract: What disclosed are structures and methods for repairing emissive display systems. Various repairing techniques embodiments in accordance with the structures and methods are provided to conquer and mitigate the defected pixels and to increase the yield and reduce the cost of emissive displays systems.

Abstract: A method of selectively transferring micro devices from a donor substrate to contact pads on a receiver substrate. Micro devices being attached to a donor substrate with a donor force. The donor substrate and receiver substrate are aligned and brought together so that selected micro devices meet corresponding contact pads. A receiver force is generated to hold selected micro devices to the contact pads on the receiver substrate. The donor force is weakened and the substrates are moved apart leaving selected micro devices on the receiver substrate. Several methods of generating the receiver force are disclosed, including adhesive, mechanical and electrostatic techniques.

Abstract: A method of selectively transferring micro devices from a donor substrate to contact pads on a receiver substrate. The method may comprise: providing a donor substrate comprising the plurality of micro devices, transferring the plurality of micro devices to an intermediate substrate, aligning a selected set of micro devices on the intermediate substrate proximal to the system substrate, providing a photo-sensitive layer between the selected set of micro devices and the system receiver; turning on the selected micro devices, curing the photo-sensitive layer in between the selected set of micro devices and the system substrate by light emitted by the selected micro devices; and bonding the selected set of micro devices to the corresponding contact pads on the system substrate.

Abstract: The disclosure is related to creating different functional micro devices by integrating functional tuning materials and creating an encapsulation capsule to protect these materials. Various embodiments of the present disclosure also related to improve light extraction efficiencies of micro devices by mounting micro devices at a proximity of a corner of a pixel active area and arranging QD films with optical layers in a micro device structure.

Abstract: An optoelectronic device comprising a pad substrate comprising an array of pads connected to a driving circuit; and a device layer structure deposited on a substrate, wherein the device layer structure including a plurality of active layers and conductive layers; and a pillar layer formed on or part of a first conductive layer, wherein the pillar layer is patterned into array of pillars to create pixelated micro devices and wherein the array of pillars is bonded to the array of pads. The redundant pillars that are not bonded to the array of pads may be provided a fixed voltage or used as sensors.

Abstract: The disclosure is related to creating different functional micro devices by integrating functional tuning materials and creating an encapsulation capsule to protect these materials. Various embodiments of the present disclosure also related to improve light extraction efficiencies of micro devices by mounting micro devices at a proximity of a corner of a pixel active area and arranging QD films with optical layers in a micro device structure.