Abstract: The present invention provides a logic circuit that is programmable to implement a first logic function or a second logic function using as few as four transistors. In one embodiment, the logic circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a first signal line for receiving a first input signal, a second signal line for receiving a second input signal, a control signal line for receiving a control signal, and an output signal line for receiving an output signal. The first transistor and the second transistor are connected in series between the control signal line and the output signal line. The third transistor is connected in series between the first input signal line and the output signal line. The fourth transistor is connected in series between the second input signal line and the output signal line.

Abstract: A self-addressing memory device is provided that can provide blocks of data starting from more than one initial location in the device, and may have the option of reading in either direction. This memory device can efficiently store multiple bitstreams, which may be of different sizes, that are used to configure one or more configurable logic devices. Each stored bitstream can be accessed in any order. In one embodiment, the configurable logic device is a Field Programmable Gate Array ("FPGA"). In one embodiment, the memory device is a Read-Only Memory ("ROM") that is either read up from all zeros or down from all ones. In one embodiment, the ROM includes a bidirectional chip enable chain that permits cascading multiple ROMs.

Abstract: A method is described for testing the programming function of integrated circuit device cells including floating gate elements. To accelerate the testing process, at most two programming pulses are needed, the two pulses being applied with the device at minimum and maximum power supply voltage levels specified for the device. First, the cell state after an initial programming pulse with the device at a minimum power supply voltage level, tested against a minimum reference voltage level, indicates whether the cell is programming properly. If not, testing ceases immediately and the device is rejected after the first pulse. Devices passing the first reading after the first pulse are subjected to a second reading at the target (higher) reference voltage. Devices passing after the second reading are designated as passing and are subjected to the next test in the test flow.

Abstract: The present invention provides a method and apparatus for improving immunity to common mode noise. The present invention prevents common mode noise from exceeding acceptable limits. The present invention is also useful to prevent common mode noise from being converted to differential mode noise by the action of parasitic diodes. One embodiment of the present invention bleeds charge off two differential lines such that the relative voltage differential is maintained, for example during a memory read, until at least one of the lines is low enough that the maximum possible upward noise (common+differential) is insufficient to turn on the parasitic diodes coupled to the positive voltage supply, leaving enough margin on the differential signal to allow a sensing circuit to accurately sense the differential signal.

Abstract: In a field programmable gate array, a test circuit for testing the signal path of a line, through a pass gate, and onto a second line. A memory cell outputs at a V.sub.GG level, where V.sub.GG .gtoreq.V.sub.DD +V.sub.TN. In order to dynamically test the signal path, three transistors and two test signals are used to apply either 0 volts or V.sub.GG to control the pass gate. Two of the transistors are coupled to the memory cell and the pass gate, whereas the third transistor is coupled to the first and second transistors and ground. The two test signals and an inverter control these transistors so that the memory state can be changed to dynamically switch the pass gate according to the test configuration. An electrical signal is then sent through the signal path under test, and the result is monitored.

Abstract: The invention provides a Configurable Logic Element (CLE) preferably included in each of an array of identical tiles. A CLE according to the invention has four function generators. The outputs of two function generators are combined with a fifth independent input in a five-input-function multiplexer or function generator to produce an output that can be any function of five inputs, or some functions of up to nine inputs. The outputs of the other two function generators are similarly combined. The outputs of the two five-input-function multiplexers or function generators are then combined with a sixth independent input in a first six-input-function multiplexer or function generator, and with a different sixth independent input in a second six-input-function multiplexer or function generator.

Abstract: The invention provides an FPGA interconnect structure preferably included in an array of identical tiles. A combination of single-length lines connecting to adjacent tiles and intermediate-length lines connecting to tiles several tiles away creates an interconnect hierarchy which allows any logic block to be connected to any other logic block, yet also allows for fast paths to both adjacent tiles and tiles some distance away. Longer interconnect lines may be included as a third level of hierarchy to permit interconnection of widely separated tiles. In a preferred embodiment, from a given tile an intermediate-length line connects to the tile three tiles away, then continues and connects to the tile six tiles away. In this embodiment, the intermediate-length line does not connect to the intervening tiles one, two, four, and five tiles away.

Abstract: A two-transistor flash EPROM cell for high-speed high-density PLD applications is provided. The two-transistor cell includes a storage transistor connected in series to an access transistor. The storage transistor prevents problems associated with both over-erase and punch-through, and allows for scaling of the gate length to realize 5V cell programming.

Abstract: A flip-flop includes non-volatile storage of a bit for encryption purposes or other applications. The non-volatile bit remains in the flip-flop, substantially unaltered, irrespective of normal flip-flop operation, and is available to be recalled whenever it is needed. The flip-flop is implemented using a pair of CMOS cells. Each cell includes a floating gate formed by connecting the gates of an n-mos transistor and a p-mos transistor. One of the two floating gates is selectively charged by hot electron injection, thereby raising the threshold of that cell. Depending upon which of the two cells is programmed by this process, the flip-flop outputs a logic one or a logic zero during a recall mode.

Abstract: Shared signal lines for interconnection of logic elements and configuration of a programmable gate array. A signal line which is shared for purposes of interconnection and configuration saves chip space. During configuration, a shared signal line is used to route configuration bits to configuration memory cells, and during operation of the programmable gate array, the shared signal line is used to interconnect logic elements of the programable gate array.

Abstract: A field programmable gate array configured to use RAM control signals as routing and/or logic resources. By using RAM bit lines as routing, and/or to implement Wire-OR functions, and/or with word lines to implement PAL functions, one may increase the efficiency of lines normally used only for programming the control memory.

Abstract: A scan lookahead skip structure that allows a programmable number of test bits, I/O blocks, flip-flops, or columns to be skipped. One embodiment of the structure includes multiplexers to skip the scan paths for several adjacent I/O blocks, flip-flops, or columns, thereby reducing the number of clock cycles and overall delay required to utilize the scan path.

Abstract: A semiconductor device tester and handler interface includes a tester mother board and a handler board. The handler board includes a central area adapted to mount multiple semiconductor devices to be tested by a tester. The tester mother board has a central area, and first and second peripheral groupings of tester contacts fixed in location on the tester mother board. A ring of spaced electrical connectors such as compressible pogo pins on the tester mother board is positioned between the first and the second groupings of tester contacts such that the area of the handler boards available for mounting semiconductor devices is enhanced. This larger area permits testing in parallel of a plurality of semiconductor devices.

Abstract: The invention provides an FPGA interconnect structure preferably included in an array of identical tiles. A combination of single-length lines connecting to adjacent tiles and intermediate-length lines connecting to tiles several tiles away creates an interconnect hierarchy which allows any logic block to be connected to any other logic block, yet also allows for fast paths to both adjacent tiles and tiles some distance away. Longer interconnect lines may be included as a third level of hierarchy to permit interconnection of widely separated tiles. In a preferred embodiment, from a given tile an intermediate-length line connects to the tile three tiles away, then continues and connects to the tile six tiles away. In this embodiment, the intermediate-length line does not connect to the intervening tiles one, two, four, and five tiles away. According to a second aspect of the invention, high fanout signals can be distributed to any tile in the array.

Abstract: Problems associated with excessive crowbar current due to input signal transitions at a buffered programmable interconnect point are solved by inserting a transistor switch between power and ground. The inserted switch is in series with the input buffer and is controlled by a memory cell which also controls the pass/no-pass state of the interconnect. An OFF inserted switch blocks current that flows during switching when the memory cell output causes a no-pass state of the interconnect.

Abstract: A programmable logic device (PLD) performs a self-test blank check erase verify operation on memory elements of the PLD to verify that they are erased prior to programming. An enhanced reference voltage source is provided to reliably generate a reference source voltage at a predetermined voltage level regardless of variations in the on-chip power supply voltage and temperature variations. The reference voltage source includes a first resistor connected between the on-chip voltage source and an output node, a second resistor connected to the output node, and a reference voltage adjustment circuit connected between the second resistor and ground. The reference voltage adjustment circuit is programmable to selectively connect the output node to ground through one or more resistive elements in response to input signals such that the output node is maintained at the predetermined reference voltage.

Abstract: A carry logic circuit for a field programmable gate array (FPGA) which allows a carry input signal to be propagated through the carry logic circuit without passing through a multiplexer of another series connected circuit element. The carry logic circuit uses a function generator of the FPGA to provide a propagate signal in response to first and second input signals provided to the carry logic circuit. Also described are methods for performing a carry logic function in an FPGA.

Abstract: A structure and method for determining whether a first in, first out (FIFO) memory is empty or full when the read address of the memory equals the write address of the memory. The read and write addresses are individually incremented, using a Grey code to avoid decoding glitches. The address space is circular and is divided at least three segments. Portions of the read and write addresses are encoded to indicate the segments in which the read and write addresses are located. These encoded address portions are decoded to determine the relative segment positions of the read and write addresses. If the read address is in the segment prior to the write address, a DIRECTION signal is set to a first state. If the write address is in the segment prior to the read address, the DIRECTION signal is set to a second state. When the read address equals the write address, the state of the DIRECTION signal is used to determine whether the memory is empty or full.

Abstract: An improved arithmetic logic unit (ALU) of an erasable-programmable logic device (EPLD) with a flexible, programmable carry function allows a broad range of functions to be implemented. The inventive circuit utilizes a separately configurable carry chain with multiple logic and arithmetic function capabilities.

Abstract: A balanced truth-and-complement circuit. A driver circuit which generates a signal and its complement in response to an input signal; a switching circuit selects between the signal and its complement in response to external control signals; and a sense amplifier detects and amplifies the signal selected by the switching circuit. The driver circuit has NMOS transistors and inverters arranged so as to connect either the signal or its complement to the switching circuit.