Abstract: When a notification is to be shown, an artificial reality notification system can add the notification to a pre-defined location in the user's field of view (e.g., top, side, or bottom) where it stays as a head leashed virtual object until the user's gaze is direct to the notification. When the user's gaze is directed at the notification, the artificial reality notification system make the notification world locked, allowing the user to move her head to bring the notification to the center of her field of view, move closer to the notification to make it larger, move around the notification to see aspects from different angles, etc. The notification can be dismissed if the user never directs her gaze at it for a first threshold amount of time or when the user looks away from the world-locked version for a second threshold amount of time.

Abstract: Semiconductor-on-insulator (SOI) field effect transistors (FETs) including body regions having different thicknesses may be formed on an SOI substrate by selectively thinning a region of a top semiconductor layer while preventing thinning of an additional region of the top semiconductor layer. An oxidation process or an etch process may be used to thin the region of the top semiconductor layer, and a patterned oxidation barrier mask or an etch mask may be used to prevent oxidation or etching of the additional portion of the top semiconductor layer. Shallow trench isolation structures may be formed prior to, or after, the selective thinning processing steps. FETs having different depletion region configurations may be formed using the multiple thicknesses of the patterned portions of the top semiconductor layer. For example, partially depleted SOT FETs and fully depleted SOI FETs may be provided.

Abstract: An integrated circuit is disclosed. The integrated circuit includes conductive rails, signal rails, at least one first via, and at least one first conductive segment. The at least one first via is disposed between the first conductive layer and the second conductive layer, and couples a first signal rail of the signal rails to at least one of the conductive rails. The first signal rail is configured to transmit a supply signal through the at least one first via and the at least one of the conductive rails to at least one element of the integrated circuit. The at least one first conductive segment is disposed between the first conductive layer and the second conductive layer. The at least one first conductive segment is coupled to the at least one of the conductive rails and is separate from the first signal rail.

Abstract: Approaches for foil-based metallization of solar cells and the resulting solar cells are described. For example, a method of fabricating a solar cell involves locating a metal foil above a plurality of alternating N-type and P-type semiconductor regions disposed in or above a substrate. The method also involves laser welding the metal foil to the alternating N-type and P-type semiconductor regions. The method also involves patterning the metal foil by laser ablating through at least a portion of the metal foil at regions in alignment with locations between the alternating N-type and P-type semiconductor regions. The laser welding and the patterning are performed at the same time.

Abstract: An electronic device may include an electronic display having multiple display pixels to display an image based on analog voltage signals. The electronic device may also include optical calibration circuitry to generate digital-to-analog converter (DAC) data based on image data associated with the image and dither circuitry to reduce a bit-depth of the DAC data, generating dithered DAC data. Additionally, the electronic device may include a gamma generator having one or more DACs to generate the analog voltage signals based on the dithered DAC data, which may instruct the gamma generator to generate the analog voltage signals indicative of the image data.

Abstract: The present disclosure provides display substrate and display device, and belongs to the field of display technology. The display substrate of the disclosure has mounting region, first display region adjacent to mounting region, and second display region surrounding first display region and/or mounting region. The display substrate comprises: substrate; driving circuit layer on substrate and comprising pixel driving circuits in first display region and second display region, and arrangement density of pixel driving circuits in second display region is less than that of pixel driving circuits in second display region; and light emitting devices in mounting region, first display region, and second display region, first electrode of each light emitting device being electrically coupled to a corresponding pixel driving circuit, and pixel driving circuit electrically coupled to first electrode of light emitting device in the mounting region being located in first display region.

Abstract: A method for forming a memory device is provided. The method including forming a memory cell stack over a substrate. The memory cell stack includes a bottom metal layer, a top metal layer, and a data storage layer disposed between the bottom metal layer and the top metal layer. The memory cell stack is patterned such that sidewalls of the data storage layer, sidewalls of the top metal layer, and sidewalls of the bottom metal layer are substantially aligned and are slanted at a non-zero angle. A top electrode is formed over the top metal layer.

Abstract: A semiconductor package including a first die, a second die and a transparent encapsulation material is provided. The first die includes a first substrate and an optical coupler formed on the first substrate. The second die is disposed on the first die and includes a transparent portion overlapping the optical coupler. The transparent encapsulation material is disposed on the first die and laterally encapsulates the second die.

Abstract: A composition for a sacrificial film includes a polymer, a solvent, and a plasticize compound having an aromatic ring structure. A package includes a die, through insulating vias (TIV), an encapsulant, and a redistribution structure. The die includes a sensing component. The TIVs surround the die. The encapsulant laterally encapsulates the die and the TIVs. The redistribution structure is over the die, the TIVs, and the encapsulant. The redistribution structure has an opening exposing the sensing component of the die. A top surface of the redistribution structure is slanted.

Abstract: A user may interact and select positions in three-dimensional space arbitrarily through conversion of a two-dimensional positional input into a three-dimensional point in space. The system may allow a user to use one or more user input devices for pointing, annotating, or drawing on virtual objects, real objects or empty space in reference to the location of the three-dimensional point in space within an augmented reality or mixed reality session.

Abstract: An electronic apparatus and method for medical examination of human body using haptics is provided. The electronic apparatus controls a first head-mounted display to render a 3D model of an anatomical portion of the body of a human subject. The rendered 3D model includes a region corresponding to defect portion in the anatomical portion. The electronic apparatus transmits a touch input to wearable sensor in contact with the anatomical portion. Such an input corresponds to a human touch on the region of the rendered 3D model. The electronic apparatus receives, based on the touch input, bio-signals associated with the defect portion via the wearable sensor. The bio-signals include physiological signals and somatic sensation information associated with the defect portion. As a response to the human touch, the electronic apparatus controls a wearable haptic device to generate a haptic feedback based on the received set of bio-signals.

Abstract: A package device is provided and includes a redistribution layer. The redistribution layer includes a first dielectric layer, a second dielectric layer, and a conductive layer. The second dielectric layer is disposed on the first dielectric layer, and the second dielectric layer includes a dielectric pattern. The conductive layer is disposed between the first dielectric layer and the second dielectric layer, and the conductive layer includes a first conductive pattern. The dielectric pattern has a through hole, and in a top view of the package device, the first conductive pattern and the through hole are overlapped with each other.

Abstract: There is provided a semiconductor device having a semiconductor element and a protective film that is disposed above the semiconductor element and contains silicon atoms and nitrogen atoms, wherein the protective film has an average number of nitrogen atoms bonded to one silicon atom of less than or equal to 1.35.

Abstract: A semiconductor device includes a semiconductor substrate; and a multilevel wiring structure on the semiconductor substrate, the multilevel wiring structure including at least an intermediate metal layer over the semiconductor substrate and an uppermost metal layer over the intermediate metal layer, and the multilevel wiring structure being divided into a main circuit portion and a scribe portion surrounding the main circuit portion; wherein the scribe portion of the multilevel wiring layer includes at least a metal pad exposed in the intermediate metal layer.

Abstract: A semiconductor device includes a non-volatile memory. The non-volatile memory includes a first dielectric layer disposed on a substrate, a floating gate disposed on the dielectric layer, a control gate. A second dielectric layer is disposed between the floating gate and the control gate, having one of a silicon nitride layer, a silicon oxide layer and multilayers thereof. A third dielectric layer is disposed between the second dielectric layer and the control gate, and includes a dielectric material having a dielectric constant higher than silicon nitride.

Abstract: The disclosure provides integrated circuit (IC) structures and methods to form the same. Methods according to the disclosure may be performed on a substrate having a first doping type, the substrate extending between a first end and a second end. A deep well is formed within the substrate, the deep well including a well boundary defined between the deep well and a remainder of the substrate. The well boundary is horizontally distal to a midpoint between the first end and the second end of the substrate. A first active semiconductor region is formed at least partially over the substrate, and an oppositely-doped second active semiconductor region is formed at least partially over the deep well.

Abstract: An interposer for electrical connection between a CPU chip and a circuit board is provided. The interposer includes a board-shaped base substrate made of glass having a coefficient of thermal expansion ranging from 3.1×10?6/K to 3.4×10?6/K. The interposer further includes a number of holes having diameters ranging from 20 ?m to 200 ?m. The number of holes ranging from 10 to 10,000 per square centimeter. Conductive paths running on one surface of the board extend right into respective holes and therethrough to the other surface of the board in order to form connection points for the chip.

Abstract: A display panel, a display driving method and a display pixel driving circuit therefor are provided. In the display driving method, the light emitting signal includes multiple pulse signals, and the variation trend of the pulse-off durations of the pulse signals is consistent with the variation trend of the light emitting brightness of the light emitting element during the light emitting period, that is, the pulse-off durations decreases sequentially with the decrease of the light emitting brightness of the light emitting element, or sequentially increases with the increase of the light emitting brightness of the light emitting element. Therefore, the flicker problem in the display panel when emitting light can be solved, and improving the image display quality.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes performing an optical proximity correction (OPC) on design patterns of a layout to generate a corrected layout, and forming a photoresist pattern on a substrate using a photomask manufactured based on the corrected layout. The OPC comprises generating develop targets for the design patterns, respectively, choosing first object patterns based on distances between the develop targets, performing a first OPC operation on the design patterns based on a mask rule to generate first correction patterns, choosing second object patterns by considering distances between the first correction patterns and a target error of each of the first correction patterns, and performing a second OPC operation on the first and second object patterns to generate second correction patterns, the performing the second OPC not based on the mask rule.

Abstract: A display device includes: a substrate including a display area and a non-display area; an external common voltage line disposed in the non-display area; a plurality of pixels and a common voltage line disposed in the display area; and a driving voltage line connected to each of the plurality of pixels, wherein a subset of the plurality of pixels overlaps the common voltage line in the display area in a plan view, and the external common voltage line and the common voltage line are connected to each other.