Abstract: A customized seal ring for a semiconductor device is formed of multiple seal ring cells that are selected and arranged to produce a seal ring design. The cells include first cells that are coupled to ground and second cells that are not coupled to ground. The second cells that are not coupled to ground, include a higher density of metal features in an inner portion thereof, than the first seal ring cells. Dummy metal vias and other metal features that may be present in the inner portion of the second seal ring cells are absent from the inner portion of the first seal ring cells that are coupled to ground. The seal ring design may include various arrangements, including alternating and repeating sequences of the different seal ring cells.

Abstract: A semiconductor device includes an interlayer insulating film; a wiring formed on the interlayer insulating film so as to protrude there from and made of a material having copper as a main component, the wiring having a thickness direction and having a cross sectional shape of an inverted trapezoid that becomes wider in width with distance away from the interlayer insulating film; and a passivation film formed so as to cover the wiring. The passivation film is made of a laminated film in which a first nitride film, an intermediate film, and a second nitride film are laminated in that order from the wiring side. The intermediate film is made of an insulating material differing from those of the first and second nitride films, and has a tapered portion having a cross sectional shape of a trapezoid that becomes narrower in width with distance away from the interlayer insulating film.

Abstract: Various embodiments of an interposer for mounting a semiconductor die, as well as methods for forming the interposer, are disclosed. The interposer includes flexible solder pad elements that are formed from a core material of the interposer, such that the interposer may absorb thermally induced stresses and conform to warped or uneven surfaces. Embodiments of electronic device packages including a semiconductor die mounted to and electrically connected to the interposer, as well as methods for forming the electronic device packages, are also disclosed. In one electronic device package, the semiconductor die is electrically connected to the interposer with wire bonds attached to a routing layer of the interposer. In another electronic device package, the semiconductor die is electrically connected to the interposer by bonding the semiconductor die to the flexible solder pad elements of the interposer in a flip-chip configuration.

Abstract: An assembly process properly positions and align a plurality of first die within a carrier substrate. The first die are positioned within cavities formed in the carrier substrate. The carrier substrate is then aligned with a second substrate having a plurality of second die fabricated therein. The first die and the second die are fabricated using different technologies. Aligning the carrier substrate and the second substrate aligns the first die with the second die. One or more first die can be aligned with each second die. Once aligned, a wafer bonding process is performed to bond the first die to the second die. In some cases, the carrier substrate is removed, leaving behind the first die bonded to the second die of the second substrate. In other cases, the carrier substrate is left in place as a cap. The second substrate is then cut to form die stacks.

Abstract: In one embodiment, a semiconductor device includes a semiconductor substrate having a first surface, and a second surface opposite to the first surface. The second surface defines a redistribution trench. The substrate has a via hole extending therethrough. The semiconductor device also includes a through via disposed in the via hole. The through via may include a via hole insulating layer, a barrier layer, sequentially formed on an inner wall of the via hole. The through via may further include a conductive connector adjacent the barrier layer. The semiconductor device additionally includes an insulation layer pattern formed on the second surface of the substrate. The insulation layer pattern defines an opening that exposes a region of a top surface of the through via. The semiconductor devices includes a redistribution layer disposed in the trench and electrically connected to the through via. The insulation layer pattern overlaps a region of the conductive connector.

Abstract: An embodiment of an apparatus to reduce supply voltage noise with capacitors of an interposer of a stacked die is disclosed. In this embodiment, an interposer is coupled to a first integrated circuit die using a first plurality of interconnects. A substrate is coupled to the interposer using a second plurality of interconnects. The substrate includes a supply voltage plane and a ground plane, each of which is coupled to the first integrated circuit die using the second plurality of interconnects, the interposer, and the first plurality of interconnects. The interposer includes capacitors coupled in parallel using the supply voltage plane, the ground plane, and the second plurality of interconnects, where capacitance from capacitors of the interposer is provided to the first integrated circuit die using the supply voltage plane and the ground plane of the substrate.

Abstract: An integrated circuit package system with multi-chip module is provided including: providing an upper substrate having an upper chip thereon; positioning a lower chip under the upper chip, the lower chip having bottom interconnects thereon; encapsulating the upper chip and the lower chip with a chip encapsulant on the upper substrate with the bottom interconnects exposed; mounting the lower chip over a lower substrate with a gap between the chip encapsulant and the lower substrate; and filling the gap with a package encapsulant or chip attach adhesive.

Abstract: A method for fabricating a semiconductor device includes forming, over a substrate, a plurality of first conductive structures which are separated from one another; forming multi-layered dielectric patterns including a first dielectric layer which covers upper ends and both sidewalls of the first conductive structures; removing portions of the first dielectric layer starting from lower end portions of the first conductive structures to define air gaps, and forming second conductive structures which are filled between the first conductive structures.

Abstract: An integrated circuit package system includes: providing an internal device; encapsulating the internal device with an encapsulation having an outer surface; and forming a redistribution line having connection points on the outer surface of the encapsulation.

Abstract: In a package process of backside illumination image sensor, a wafer including a plurality of pads is provided. A first carrier is processed to form a plurality of blind vias therein. The first carrier is adhered to the wafer so that the blind vias face to the pads correspondingly. A spacing layer is formed and a plurality of sensing components are disposed. A second carrier is adhered on the spacing layer. Subsequently, a carrier thinning process is performed so that the blind vias become the through holes. An insulating layer is formed on the first carrier. An electrically conductive layer is formed on the insulating layer and filled in the though holes to electrically connect to the pads. The package process can achieve the exact alignment of the through holes and the pads, thereby increasing the package efficiency and improving the package quality.

Abstract: Some exemplary embodiments of a III-nitride switching device with an emulated diode have been disclosed. One exemplary embodiment comprises a GaN switching device fabricated on a substrate comprising a high threshold GaN transistor coupled across a low threshold GaN transistor, wherein a gate and a source of the low threshold GaN transistor are shorted with an interconnect metal to function as a parallel diode in a reverse mode. The high threshold GaN transistor is configured to provide noise immunity for the GaN switching device when in a forward mode. The high threshold GaN transistor and the low threshold GaN transistor are typically fabricated on the same substrate, and with significantly different thresholds. As a result, the superior switching characteristics of III-nitride devices may be leveraged while retaining the functionality and the monolithic structure of the inherent body diode in traditional silicon FETs.

Abstract: The invention relates to a MIG- or MAG-welding gun, comprising a hand-held grip for supporting, handling and aiming the welding gun during a welding process, the grip including a body member (1). The grip further includes a grip member (2) pivotable relative to the body member (1) and lying alongside the body member over at least part of the same lengthwise extent as the body member. The grip member (2) has its free end pivotable to such a distance from the body member (1) that a hand grasping around the pivotable grip member (2) fits between the body member (1) and the pivotable grip member (2), the body member (1) resting on top of the hand. When the pivotable grip member (2) has its free end is in its position pivoted into the engagement with the body member (1), these two components constitute jointly a handle for the hand to grasp around.

Abstract: In general, embodiments of the present invention provide a chip package with multiple TSV configurations. Specifically, the chip package typically includes a backend layer (e.g., metal interconnect layer); a substrate coupled to the backend layer; a set (at least one) of backend side interconnects extending (e.g., angularly) from a side surface of the backend layer to a bottom surface of the backend layer; a set of optional vertical TSVs extending from a top surface of the backend layer through the substrate; and a network organizer positioned in the substrate organizer for handling communications made using the set of backend side interconnects and the set of vertical TSVs. A set of connections (e.g., controlled collapse chip connections (C4s) can be positioned adjacent to any of the vias to provide connectively to other hardware elements such as additional chip packages, buses, etc.

Abstract: A stacked semiconductor package includes a first semiconductor chip having one surface, and an other surface which faces away from the one surface, and first through electrodes which pass through the one surface and the other surface and project out of the other surface; a second semiconductor chip stacked over the one surface of the first semiconductor chip and having second through electrodes which are connected with the first through electrodes; a heat dissipation member disposed over the second semiconductor chip; and a first heat absorbing member disposed to face the other surface of the first semiconductor chip and defined with through holes into which projecting portions of the first through electrodes are inserted.

Abstract: A semiconductor device includes a semiconductor layer, an active region defined in the semiconductor layer, first fingers provided on the active region and arranged in parallel with respect to a first direction, second fingers provided on the active region and interleaved with the first fingers, a bus line that is provided on an outside of the active region and interconnects the first fingers, first air bridges that are provided on the outside of the active region and are extended over the bus line, and that are connected to the second fingers, and second air bridges that are provided on the outside of the active region and are arranged in a second direction which crosses to the first direction, and that interconnect the first air bridges.

Abstract: An integrated circuit device and method for manufacturing an integrated circuit device is disclosed. The integrated circuit device comprises a core device and an input/output circuit. Each of the core device and input/output circuit includes a PMOS structure and an NMOS structure. Each of the PMOS includes a p-type metallic work function layer over a high-k dielectric layer, and each of the NMOS structure includes an n-type metallic work function layer over a high-k dielectric layer. There is an oxide layer under the high-k dielectric layer in the input/output circuit.

Abstract: A microelectronic assembly includes first and second stacked microelectronic elements, each having spaced apart traces extending along a front face and beyond at least a first edge thereof. An insulating region can contact the edges of each microelectronic element and at least portions of the traces of each microelectronic element extending beyond the respective first edges. The insulating region can define first and second side surfaces adjacent the first and second edges of the microelectronic elements. A plurality of spaced apart openings can extend along a side surface of the microelectronic assembly. Electrical conductors connected with respective traces can have portions disposed in respective openings and extending along the respective openings. The electrical conductors may extend to pads or solder balls overlying a face of one of the microelectronic elements.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes first and second stacked body, first and second semiconductor pillars, a connecting portion, a first memory film, and a dividing portion. The stacked bodies include a plurality of electrode films stacked along a first axis and as interelectrode insulating film provided between the electrode films. The first and second semiconductor pillars penetrate through the first and second stacked bodies along the first axis, respectively. The connecting portion electrically connects the first and second semiconductor pillars. The first memory film is provided between the electrode film and the semiconductor pillar. The dividing portion electrically divides the first and second electrode films from each other between the first semiconductor pillar and the second semiconductor pillar, is in contact with the connecting portion, and includes a stacked film including a material used for the first memory film.

Abstract: A device includes a polymer, a device die in the polymer, and a plurality of Through Assembly Vias (TAVs) extending from a top surface to a bottom surface of the polymer. A bulk metal feature is located in the polymer and having a top-view size greater than a top-view size of each of the plurality of TAVs. The bulk metal feature is electrically floating. The polymer, the device die, the plurality of TAVs, and the bulk metal feature are portions of a package.

Abstract: A chip package comprising a carrier, a chip, a plurality of first conductive elements, an encapsulation, and a conductive film is provided. The carrier has a carrying surface and a back surface opposite to the carrying surface. Furthermore, the carrier has a plurality of common contacts in the periphery of the carrying surface. The chip is disposed on the carrying surface and electrically connected to the carrier. In addition, the first conductive elements are disposed on the common contacts respectively. The encapsulation is disposed on the carrying surface and encapsulating the chip. Moreover, the conductive film is disposed over the encapsulation and the first conductive elements, so as to electrically connect with the common contacts via the first conductive elements. A process for fabricating the chip package is further provided. The chip package is capable of preventing the EMI problem and thus provides superior electrical performance.