Abstract: A manufacturing method of a display device according to some embodiments includes: forming a protrusion pattern on a carrier glass; coating a polymer on the protrusion pattern to form a polymer layer; forming a stacked structure on the polymer layer, including a transistor and an organic light emitting element connected to the transistor; and separating the carrier glass and the protrusion pattern from the polymer layer, wherein an opening penetrating the polymer layer is formed during the separation of the protrusion pattern.

Abstract: An organic light emitting element includes a first electrode; a first organic layer on the first electrode; a second organic layer on the first organic layer; a second electrode on the second organic layer; and a mixed layer between the first organic layer and the second organic layer. A gap between a highest occupied molecular orbital (HOMO) energy level of the first organic layer and a lowest unoccupied molecular orbital (LUMO) energy level of the second organic layer may be in a range from about 1.35 eV to about 1.70 eV. The mixed layer may emit light having a wavelength in a range from about 740 nm to about 950 nm by exciplex.

Abstract: MEMS device, in which a body made of semiconductor material contains a chamber, and a first column inside the chamber. A cap of semiconductor material is attached to the body and forms a first membrane, a first cavity and a first channel. The chamber is closed on the side of the cap. The first membrane, the first cavity, the first channel and the first column form a capacitive pressure sensor structure. The first membrane is arranged between the first cavity and the second face, the first channel extends between the first cavity and the first face or between the first cavity and the second face and the first column extends towards the first membrane and forms, along with the first membrane, plates of a first capacitor element.

Abstract: An organic electroluminescence display device comprising a plurality of light emitting elements, a sealing film covering the plurality of light emitting elements, and having a top surface which is an inorganic film made of a first inorganic material, a protective film made of an organic material, the protective film covering the sealing film, and a close-fitting layer made of a second inorganic material and located between the top surface of the sealing film and the protective film. The first inorganic material has higher moisture-barrier properties than the second inorganic material, and adhesion between the second inorganic material and the organic material is higher than adhesion between the first inorganic material and the organic material.

Abstract: An organic light emitting diode array substrate, a manufacturing method thereof, and a display device are provided. The organic light emitting diode array substrate includes a base substrate; a first electrode pattern and an insulating layer disposed on the base substrate, wherein the first electrode pattern includes a plurality of first electrodes of strip shape, the first electrodes protrude above the insulating layer to form a step therebetween; an anti-oxidant conductive film disposed on the first electrode pattern and the insulating layer, wherein the anti-oxidant conductive film is disconnected at the step between the first electrodes and the insulating layer.

Abstract: A method of fabricating a hybrid organic-inorganic halide perovskite film includes depositing a precursor layer onto a substrate, the precursor layer comprising metal halide, placing an organic source-material layer onto a boat, the organic source-material layer comprising an organic cation, and annealing the precursor layer and the organic source-material layer in a vacuum chamber enclosed in a constrained volume.

Abstract: An electronic device is disclosed and includes a housing; a display that is exposed through one surface of the housing; a light emitting unit that is disposed on at least a part of a rear surface of the display and includes at least one light source for outputting light of at least one wavelength band; a light receiving unit that includes at least one area for receiving light of the at least one wavelength band; a light blocking element for blocking light, that is output from the at least one light source, from entering a switch for turning on/off at least one pixel of the display; a processor electrically connected with the display, the light emitting unit, and the light receiving unit; and a memory electrically connected with the processor, in which the memory includes instructions that cause, when executed, the processor to output light through the at least one light source in a state where one or more pixels included in a specific area of the display, which includes an area covering the at least one light

Abstract: A display device includes a plurality of pixels each including a first light emitting element with a first light reflecting layer, a second light emitting element with a second light reflecting layer, and a third light emitting element with a third light reflecting layer, arranged in a two-dimensional matrix. Each of the light emitting elements includes a first electrode, an organic layer, and a second electrode. Grooves that each have a light shielding layer are formed in a boundary region between the light emitting elements. A bottom of the first groove and a bottom of the third groove are located at a position higher than a top surface of the first light reflecting layer. A bottom of the second groove is located at a position higher than a top surface of the second light reflecting layer.

Abstract: A semiconductor module may include a host, a first semiconductor device, and a second semiconductor device. The first host line may be connected to the first and second semiconductor device or devices, according to a set mode.

Abstract: A method of manufacturing flexible substrate is provided, the method comprising following steps: pasting a heat dissipation sheet on a carrier substrate; preparing a thermal insulating layer on the heat dissipation sheet; preparing a flexible substrate layer on the thermal insulating layer; preparing a display element on the flexible substrate layer; and separating the carrier substrate and the heat dissipation sheet and obtaining a flexible substrate. The method of manufacturing flexible substrate and the flexible substrate are provided by this invention, which could reduce thickness of flexible substrate and enhances curving property.

Abstract: The present disclosure relates to an OLED display device, including OLED units and a pixel spacer layer having a plurality of opening portions, which are disposed on a substrate. Each OLED unit includes an anode, a light-emitting functional layer and a cathode which are disposed sequentially in a direction away from the substrate. The light-emitting functional layer is disposed in the opening portions. The pixel spacer layer is provided with a via hole. The display device further includes: an auxiliary electrode disposed below the pixel spacer layer, corresponding to a display area, spaced apart from the anode, and connected to the cathode through the via hole in the pixel spacer layer; and a print circuit board disposed at a side of the substrate away from the pixel spacer layer, configured to transmit a signal of the cathode to the auxiliary electrode through an conductive lead.

Abstract: An electronic device is disclosed and includes a housing; a display that is exposed through one surface of the housing; a light emitting unit that is disposed on at least a part of a rear surface of the display and includes at least one light source for outputting light of at least one wavelength band; a light receiving unit that includes at least one area for receiving light of the at least one wavelength band; a light blocking element for blocking light, that is output from the at least one light source, from entering a switch for turning on/off at least one pixel of the display; a processor electrically connected with the display, the light emitting unit, and the light receiving unit; and a memory electrically connected with the processor, in which the memory includes instructions that cause, when executed, the processor to output light through the at least one light source in a state where one or more pixels included in a specific area of the display, which includes an area covering the at least one light

Abstract: A semiconductor device includes a substrate having a plurality of active patterns. A plurality of gate electrodes intersects the plurality of active patterns. An active contact is electrically connected to the active patterns. A plurality of vias includes a first regular via and a first dummy via. A plurality of interconnection lines is disposed on the vias. The plurality of interconnection lines includes a first interconnection line disposed on both the first regular via and the first dummy via. The first interconnection line is electrically connected to the active contact through the first regular via. Each of the vias includes a via body portion and a via barrier portion covering a bottom surface and sidewalls of the via body portion. Each of the interconnection lines includes an interconnection line body portion and an interconnection line barrier portion covering a bottom surface and sidewalls of the interconnection line body portion.

Abstract: An organic light-emitting diode array substrate and a manufacturing method thereof and a display device are provided. The OLED array substrate includes a base substrate, a power line and a pixel structure disposed on the base substrate. The power line is disposed under the pixel structure and is at least partially overlapped with the pixel structure; an insulating layer is disposed between the power line and the pixel structure, and a first via hole structure is disposed in the insulating layer; and the power line is connected with a driving transistor in the pixel structure through the first via hole structure.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate and a gate stack covering a portion of the fin structure. The gate stack includes a work function layer and a gate dielectric layer. The semiconductor device structure also includes an isolation element over the semiconductor substrate and adjacent to the gate stack. The isolation element is in direct contact with the work function layer and the gate dielectric layer, and a lower width of the isolation element is greater than an upper width of the isolation element.

Abstract: A display apparatus includes: a substrate including a display area and a non-display area surrounding the display area; a data wiring on the substrate in the display area; a connection wiring on the substrate in the non-display area and including a same material as the data line; an inorganic protective layer on the substrate covering the data line and extending to the non-display area; and an upper organic layer on the substrate covering the connection wiring and at least a portion of the inorganic protection layer, where the upper organic layer includes a first to third upper organic layers, and the second upper organic layer in a side of the upper organic layer adjacent to the display area is in direct contact with the inorganic protective layer, and the third upper organic layer exposes an end of the second upper organic layer in the side of the upper organic layer.

Abstract: A display substrate includes a base substrate, a gate metal pattern, a semiconductor layer, and a data metal pattern. The base substrate includes a display area and a peripheral area. The gate metal pattern includes a gate electrode of a transistor and includes a gate metal member disposed on the peripheral area. The transistor is disposed on the display area. The semiconductor layer includes a channel portion of the transistor and includes a semiconductor member disposed on the peripheral area. The data metal pattern includes a source electrode of the transistor and includes a data metal member disposed on the peripheral area, electrically connected to the gate metal member, and directly contacting the semiconductor member. A maximum thickness of the data metal member in a direction perpendicular to the base substrate is greater than a maximum thickness of the semiconductor member in the direction.

Abstract: An integrated circuit device includes: a first fin active region extending in a first direction parallel to a top surface of a substrate; a second fin active region extending in the first direction and spaced apart from the first fin active region in a second direction different from the first direction; a gate line intersecting the first and second fin active regions; a first source/drain region on one side of the gate line in the first fin active region; and a second source/drain region on one side of the gate line in the second fin active region and facing the first source/drain region, wherein a cross-section of the first source/drain region perpendicular to the first direction has an asymmetric shape with respect to a center line of the first source/drain region in the second direction extending in a third direction perpendicular to the top surface of the substrate.

Abstract: A method for filling gaps between structures includes forming a plurality of high aspect ratio structures adjacent to one another with gaps, forming a first dielectric layer on tops of the structures and conformally depositing a spacer dielectric layer over the structures. The spacer dielectric layer is removed from horizontal surfaces and a protection layer is conformally deposited over the structures. The gaps are filled with a flowable dielectric, which is recessed to a height along sidewalls of the structures by a selective etch process such that the protection layer protects the spacer dielectric layer on sidewalls of the structures. The first dielectric layer and the spacer dielectric layer are exposed above the height using a higher etch resistance than the protection layer to maintain dimensions of the spacer layer dielectric through the etching processes. The gaps are filled by a high density plasma fill.

Abstract: An OLED display device includes a substrate. A first electrode is disposed on the substrate. An organic light emitting layer is disposed on the first electrode. A second electrode is disposed on the organic light emitting layer. A thin film encapsulation layer is disposed on the second electrode. The thin film encapsulation layer includes at least one inorganic layer and at least one organic layer that is disposed alternately with the at least one inorganic layer. The at least one organic layer includes a low refractive index layer overlapping the organic light emitting layer and a high refractive index layer disposed on the low refractive index layer. The high refractive index layer includes a convex surface protruding toward the organic light emitting layer.