Abstract: A printed circuit board (PCB) system includes an integrated circuit (IC) package having a main IC chip that is electrically coupled to a top surface of a package substrate. A first printed circuit board (PCB) is electrically coupled to first contact structures on a bottom surface of the package substrate. A heat dissipation member is coupled to the main IC chip. A memory module is configured to electrically couple, via an interposer, with second contact structures on a top surface of the package substrate while the heat dissipation member dissipates heat from the main IC chip away from one or more memory IC chips on the memory module. The interposer is configured to electrically couple the second contact structures of the IC package with the memory module while the heat dissipation member dissipates heat from the main IC chip away from the one or more memory IC chips.

Abstract: In a general aspect, an electronic device assembly can include a semiconductor device assembly including a ceramic substrate; a patterned metal layer disposed on a first surface of the ceramic substrate; and a semiconductor die disposed on the patterned metal layer. The electronic device assembly can also include a thermal dissipation appliance. Ceramic material of a second surface of the ceramic substrate can be direct-bonded to a surface of the thermal dissipation appliance. The second surface of the ceramic substrate can be opposite the first surface of the ceramic substrate.

Abstract: An electronic package includes an electronic component and a heat dissipation structure, wherein the heat dissipation structure has a plurality of bonding pillars, and a metal layer is formed on the bonding pillars, so as to stably dispose the heat dissipation structure on the electronic component via the bonding pillars and the metal layer.

Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.

Abstract: The present invention discloses a method for packaging a chip-on-film (COF). The method includes: S1, forming a plurality of first pins on a circuit surface of a flexible circuit substrate, and forming a plurality of second pins on a chip to be packaged; S2, arranging to keep the circuit surface always facing downwards, arranging to keep a surface of the chip to be packaged, where the second pins matching the first pins are arranged, always facing upwards, and arranging the first pins and the second pins, to be opposite to each other; and S3, applying a top-down pressure to the flexible circuit substrate, and/or applying a bottom-up pressure to the chip to be packaged, and simultaneously heating at high temperature to solder the first pins and the second pins in a fused eutectic manner. The method of the present invention improves the product yield and stability.

Abstract: A semiconductor device of an embodiment includes a first lead frame, a second lead frame located apart from the first lead frame, a semiconductor chip mounted on the first lead frame, and a conductive member. The conductive member electrically connects an electrode of the semiconductor chip to the second lead frame through a conductive adhesive. The conductive member includes a cut face located apart from a bonding face of the electrode, on which the conductive member is bonded.

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

Abstract: A lead-frame assembly is disclosed, for a semiconductor die and comprising a die attach pad and a plurality of elongate leads spaced apart therefrom; wherein each elongate lead has a first proximal end portion, a second distal end portion and a middle portion therebetween; wherein the die attach pad and each of the plurality of elongate leads each comprise a coating-free portion, and a coated portion having a coating material thereon; wherein a part of a perimeter of the die attach pad proximal each lead is comprised in the coating-free portion, and wherein the proximal end portion of each elongate lead is comprised in the coating-free portion. Associated package assemblies and methods are also disclosed.

Abstract: An anti-fuse device including a substrate, a doped region, a dielectric layer, a first contact, an anti-fuse material layer, and a second contact is provided. The doped region is located in the substrate. The dielectric layer is located on the substrate and has a first opening and a second opening. The first opening and the second opening respectively expose the doped region. The first contact is located in the first opening. The anti-fuse material layer is located between the first contact and the doped region. The second contact is located in the second opening and is electrically connected to the doped region.

Abstract: Semiconductor packages and/or assemblies having microchannels, a microchannel module, and/or a microfluidic network for thermal management, and associated systems and methods, are disclosed herein. The semiconductor package and/or assembly can include a substrate integrated with a microchannel and a coolant disposed within the microchannel to dissipate heat from a memory device and/or a logic device of the semiconductor package and/or assembly. The microchannel can be configured beneath the memory device and/or the logic device.

Abstract: A package structure is provided. The package structure includes a semiconductor die and a thermoelectric structure disposed on the semiconductor die. The thermoelectric structure includes P-type semiconductor blocks, N-type semiconductor blocks and metal pads. The P-type semiconductor blocks and the N-type semiconductor blocks are arranged in alternation with the metal pads connecting the P-type semiconductor blocks and the N-type semiconductor blocks. When a current flowing through one of the N-type semiconductor block, one of the metal pad, and one of the P-type semiconductor block in order, the metal pad between the N-type semiconductor block and the P-type semiconductor block forms a cold junction which absorbs heat generated by the semiconductor die.

Abstract: An electronic device is disclosed, which includes: a substrate; a first metal layer, disposed on the substrate and having a first hole; a second metal layer, disposed on the substrate and having a second hole; a light detecting element for detecting a light passing through the first hole and the second hole; a transistor, disposed on the substrate; and a light shielding layer, disposed between the substrate and the transistor.

Abstract: In one example, an electronic device comprises a base substrate comprising a base substrate conductive structure, a first electronic component over a first side of the base substrate, an encapsulant over the first side of the base substrate, wherein the encapsulant contacts a lateral side of the electronic component, an interposer substrate over a first side of the encapsulant and comprising an interposer substrate conductive structure, and a vertical interconnect in the encapsulant and coupled with the base substrate conductive structure and the interposer substrate conductive structure. A first one of the base substrate or the interposer substrate comprises a redistribution layer (RDL) substrate, and a second one of the base substrate or the interposer substrate comprises a laminate substrate. Other examples and related methods are also disclosed herein.

Abstract: A display substrate includes: a base substrate having a first side and a second side opposite to each other; a transmitter arranged on the first side of the base substrate, and configured to convert a first display electrical signal into a conduction signal; a first light-emitting element arranged on a side of the transmitter away from the base substrate, wherein the first light-emitting element emits light under a driving action of the first display electrical signal; a receiver arranged on the second side of the base substrate, and configured to receive the conduction signal and convert the conduction signal into a second display electrical signal; and a second light-emitting element arranged on a side of the receiver away from the base substrate, wherein the second light-emitting element emits light under a driving action of the second display electrical signal.

Abstract: A semiconductor device includes an array of flexible connectors configured to mitigate thermomechanical stresses. In one embodiment, a semiconductor assembly includes a substrate coupled to an array of flexible connectors. Each flexible connector can be transformed between a resting configuration and a loaded configuration. Each flexible connector includes a conductive wire electrically coupled to the substrate and a support material at least partially surrounding the conductive wire. The conductive wire has a first shape when the flexible connector is in the resting configuration and a second, different shape when the flexible connector is in the loaded configuration. The first shape includes at least two apices spaced apart from each other in a vertical dimension by a first distance, and the second shape includes the two apices spaced apart from each other in the vertical dimension by a second distance different than the first distance.

Abstract: A method of manufacturing a display system includes forming a display element having a display active area over a silicon backplane, forming a display driver integrated circuit (DDIC), and bonding the display element to the display driver integrated circuit (DDIC). The display active area may include a light emitting diode such as an organic light emitting diode (OLED). Separately forming the display and the display circuitry may simplify formation of the OLED and allow for a higher density control interface between the display and the DDIC.

Abstract: Implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; forming an organic material over the first side of the semiconductor substrate and into the plurality of notches; forming a cavity into each of a plurality of semiconductor die included in the semiconductor substrate; applying a backmetal into the cavity in each of the plurality of semiconductor die included in the semiconductor substrate; and singulating the semiconductor substrate through the organic material into a plurality of semiconductor packages.

Abstract: A semiconductor structure includes a semiconductor substrate, a semiconductor device and a heating structure. The semiconductor substrate includes a device region and a heating region surrounding the device region. The semiconductor device is located on the device region. The heating structure is located on the heating region and includes an intrinsic semiconductor area, at least one heating element and at least one heating pad. The intrinsic semiconductor area is surrounding the semiconductor device. The at least one heating element is located at a periphery of the intrinsic semiconductor area. The at least one heating pad is joined with the at least one heating element, wherein the at least one heating pad includes a plurality of contact structures, and a voltage is supplied from the plurality of contact structures to control a temperature of the at least one heating element.

Abstract: A fin-type field-effect transistor (FinFET) device includes a plurality of fins formed over a substrate. The semiconductor device further includes a dielectric layer filled in a space between each fin and over a first portion of the plurality of fins and a dielectric trench formed in the dielectric layer. The dielectric trench has a vertical profile. The semiconductor device further includes a second portion of the plurality of fins recessed and exposed in the dielectric trench. The second portion of the plurality of fins have a rounded-convex-shape top profile.

Abstract: A display device includes a substrate including a display area including a plurality of pixels, a peripheral area around the display area, and a bending area disposed in the peripheral area. A plurality of transistors is disposed in each pixel; a driving voltage line is disposed in the display area and transmits a driving voltage; a driving voltage transmission line is disposed in the peripheral area and is connected to the driving voltage line; and a conductive overlap layer overlaps at least one of the plurality of transistors.