Abstract: Implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; forming an organic material over the first side of the semiconductor substrate and into the plurality of notches; forming a cavity into each of a plurality of semiconductor die included in the semiconductor substrate; applying a backmetal into the cavity in each of the plurality of semiconductor die included in the semiconductor substrate; and singulating the semiconductor substrate through the organic material into a plurality of semiconductor packages.

Abstract: A fin-type field-effect transistor (FinFET) device includes a plurality of fins formed over a substrate. The semiconductor device further includes a dielectric layer filled in a space between each fin and over a first portion of the plurality of fins and a dielectric trench formed in the dielectric layer. The dielectric trench has a vertical profile. The semiconductor device further includes a second portion of the plurality of fins recessed and exposed in the dielectric trench. The second portion of the plurality of fins have a rounded-convex-shape top profile.

Abstract: A package is disclosed. In one example, the package comprises a carrier comprising a thermally conductive and electrically insulating layer, a laminate comprising a plurality of connected laminate layers, an electronic component mounted between the carrier and the laminate. An encapsulant is at least partially arranged between the carrier and the laminate and encapsulating at least part of the electronic component.

Abstract: A clip preform includes a die contact portion and an aligner structure. An intermediate portion connects the die contact portion to a lead contact portion in the aligner structure. The die contact portion is configured to contact a semiconductor die. The aligner structure is configured to attach the lead contact portion to a lead post. The die contact portion, the intermediate portion, and the aligner structure form a structure of a primary clip for connecting the semiconductor die to the lead post. The clip preform is severable by removing parts of the die contact portion and the intermediate portion of the clip preform to form a secondary clip for connecting the semiconductor die to the lead post. The aligner structure, a remaining part of the die contact portion, and a remaining part of the intermediate portion of the clip preform form a structure of the secondary clip.

Abstract: A method of manufacturing a display panel includes preparing a work substrate that includes a mother substrate that has a plurality of cell areas, a light emitting element layer formed in each of the cell areas, and an encapsulation layer formed on each cell area, disposing a plurality of protective films in the cell areas, respectively, that cover the light emitting element layer and the encapsulation layer, cutting the work substrate along cutting lines at an outer side of the protective films of each cell area to form a preliminary display panel, grinding side surfaces of the preliminary display panel, and removing the protective films from each ground preliminary display panel to form the display panel.

Abstract: An object is to provide a semiconductor device which suppresses poor bonding between a metal pattern and an electrode terminal due to insufficient temperature rise at the time of bonding the metal pattern and the electrode terminal. The electrode terminal is branched into a plurality of branch portions in a width direction on one end side of an extending direction thereof, of the plurality of branch portions, a first branch portion and a second branch portion are bonded on the metal pattern via a bonding material, respectively, the first branch portion has a wider width than that of the second branch portion, and the bonding material between the second branch portion and the metal pattern is thinner than the bonding material between the first branch portion and the metal pattern.

Abstract: A display device includes a plurality of subpixels. The plurality of subpixels include a first subpixel including a first light-emitting layer, and a first subpixel circuit, a second subpixel including a second light-emitting layer, and a second subpixel circuit, a third subpixel including a third light-emitting layer, and a third subpixel circuit, and a fourth subpixel including a fourth light-emitting layer, and a fourth subpixel circuit. An area of an opening exposing a first electrode in the first subpixel is larger than an area of the opening exposing the first electrode in each of the second subpixel, the third subpixel, and the fourth subpixel. A plurality of light emission control lines include a first light emission control line connected to the first subpixel circuit and the third subpixel circuit, and a second emission control line connected to the second subpixel circuit and the fourth subpixel circuit.

Abstract: Implementations of a semiconductor device may include a semiconductor die including a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof where the semiconductor die may be coupled with one of a substrate, a leadframe, an interposer, a package, a bonding surface, or a mounting surface. The thickness may be between 0.1 microns and 125 microns.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a gate dielectric layer on the barrier layer; forming a work function metal layer on the gate dielectric layer; patterning the work function metal layer and the gate dielectric layer; forming a gate electrode on the work function metal layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

Abstract: Provided is a semiconductor module comprising a semiconductor chip, a lead frame including a chip connection portion configured to connect the lead frame to the semiconductor chip, and a bonding member configured to connect the chip connection portion and the semiconductor chip, wherein the semiconductor chip includes a semiconductor substrate, an active portion provided on the semiconductor substrate, and a transverse protective film provided above the active portion and provided to traverse the active portion in a top view, wherein the chip connection portion includes a center portion which covers a center of the transverse protective film in a top view and a first cut-out portion provided from a first end side of the chip connection portion towards the center portion.

Abstract: A package structure is provided. The package structure includes an encapsulant and an interposer. The encapsulant has a top surface and a bottom surface opposite to the top surface. The interposer is encapsulated by the encapsulant. The interposer includes a main body, an interconnector, and a stop layer. The main body has a first surface and a second surface opposite to the first surface. The interconnector is disposed on the first surface and exposed from the top surface of the encapsulant. The stop layer is on the second surface, wherein a bottom surface of the stop layer is lower than the second surface.

Abstract: A capacitor includes a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet formed between the first connection terminal and the second connection terminal, and the first connection terminal, the second insulating sheet, and the second connection terminal extend to the outside from the case. A semiconductor module includes a multi-layer terminal portion in which a first power terminal, a first insulating sheet, and a second power terminal are sequentially stacked. The first power terminal includes a first bonding area electrically connected to the first connection terminal, and the second power terminal includes a second bonding area electrically connected to the second connection terminal. The first insulating sheet includes a terrace portion that extends in a direction from the second bonding area towards the first bonding area in a planar view.

Abstract: A soldering structure configured for preventing solder overflow during soldering and a power module, may include a component to be soldered; and a metal layer having a bonding area, to which the component to be soldered is bonded by solder, and a groove portion formed around the bonding area.

Abstract: Implementations of a semiconductor substrate may include a wafer including a first side and a second side; and a support structure coupled to the wafer at a desired location on the first side, the second side, or both the first side and the second side. The support structure may include an organic compound.

Abstract: A semiconductor device package is provided. The semiconductor device package includes providing a first substrate, a computing unit and a power module. The first substrate has a first surface and a second surface opposite to the first surface. The computing unit is adjacent to the first surface. The computing unit includes a semiconductor die. The power module is adjacent to the second surface. The power module includes a power element and a passive element. Each of the semiconductor die, the power element, and the passive element is vertically arranged with respect to each other, and the passive elements are assembled between the semiconductor die and the power element.

Abstract: A semiconductor package includes a die and an encapsulant. The die has an active surface and an opposite backside surface. The encapsulant wraps around the die and has a recess reaching the backside surface. A span of the recess differs from a span of the backside surface and a span of the encapsulant.

Abstract: A semiconductor device includes: a first resistance chain including first upper resistance segments, first resistance via plugs, and first lower resistance segments; a second resistance chain including second upper resistance segments, second resistance via plugs, and second lower resistance segments; and a third resistance chain including third upper resistance segments, third resistance via plugs, and third lower resistance segments, wherein the first upper resistance segments have a first upper effective resistance distance, and the second upper resistance segments have a second upper effective resistance distance, and the third upper resistance segments have a third upper effective resistance distance, and the first upper effective resistance distance is equal to the third upper effective resistance distance, and the second upper effective resistance distance is an integer multiple of the first upper effective resistance distance.

Abstract: A display substrate includes a substrate, and the display substrate includes a first display region with a greatest light transmittance, a second display region, and a third display region on the substrate, the third display region is contiguous to the first and second display regions. A plurality of first sub-pixels are disposed in the first display region, a plurality of second sub-pixels are disposed in the second display region, a plurality of third sub-pixels are disposed in the third display region, and a density of the second sub-pixels is the greatest. A pixel circuit for the first sub-pixels is disposed in the third display region, a first electrode of the first sub-pixel is electrically connected to a corresponding pixel circuit via a wiring, the wiring includes a first segment of transparent conductive material disposed in the first display region and a second segment disposed in the third display region.

Abstract: A package comprising a substrate and an integrated device coupled to the substrate. The substrate comprises at least one dielectric layer; a plurality of interconnects comprising plurality of pad-on-pad interconnects, wherein the plurality of pad-on-pad interconnects is embedded through a first surface of the substrate. The plurality of pad-on-pad interconnects includes a first pad-on-pad interconnect comprising a first pad and a second pad coupled to the first pad. The package further comprising a solder resist layer located over the first surface of the substrate. The solder resist layer comprises a first solder resist layer portion comprising a first thickness; and a second solder resist layer portion comprising a second thickness that is less than the first thickness. The second solder resist layer portion is located between the at least one dielectric layer and the integrated device.

Abstract: An electronic device includes a structured metallization layer including a plurality of contact pads that are electrically isolated from one another, and a metal clip connected in a current shunt measurement arrangement with a semiconductor device, wherein the metal clip includes first, second and third landing pads, a first bridge span connected between the first and second landing pads, and second bridge span connected between the second and third landing pads, wherein the first, second third landing pads are respectively thermally conductively attached to first, second and third contact pads from the structured metallization layer, and wherein the second mounting pad is electrically floating.