Abstract: A system and method are used to limit a proportion of a programmable patterning means used to pattern a substrate. This is done such that a size of a repeated pattern to be exposed on the substrate is an integer multiple of a size of a pattern exposed on the substrate by the patterned beam.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern of a mask onto a substrate, a holder for holding the substrate and having a first channel for the fluid to flow, and a fluid supply unit for supplying the fluid from the first channel of the holder to at least part of a space between the projection optical system and the substrate, the exposure apparatus exposing the substrate via the projection optical system and the fluid.

Abstract: A transporter is provided for moving a substrate and a patterning device relative to one another in a lithographic apparatus. The transporter includes a beam, a driver, and a slide. The slide is supported by the beam, and the driver is disposed to move the slide relative to the beam in a transport direction. The beam has a concave interior surface transverse to the transport direction, and the slide is supported against the concave interior surface in at least two directions transverse to the transport direction.

Abstract: A lithographic apparatus includes a mask or reticle masking device configured to block radiation. The masking device includes a reflective blade. The reflective blade may include a mirrored blade, which may be used in the scanning (Y) direction, and which moves across the beam of radiation in use. The reflective blade provides within an illumination system an effective slit for a mask or reticle within the lithographic apparatus.

Abstract: An optical integrator having characteristics to reduce effects of manufacturing errors of many minute refraction surfaces integrally formed by, for example, etching on an illumination intensity distribution. An optical integrator (8) comprising an integrally formed plurality of first minute refraction surfaces (80a) and an integrally formed plurality of second minute refraction surfaces (80b). A parameter ? satisfies conditions, |?|<0.2 (where ?=(??1)3·NA2/?n2), where a refracting power ratio ?a/?b between ?a, a refracting power of the first minute refraction surfaces and ?b, a refracting power of the second minute refraction surfaces is ?, numerical aperture on an emission side of the optical integrator is NA, and a difference between a refraction index of a medium on a light entrance side of the second minute refraction surfaces and a refraction index of a medium on a light emission side of the second minute refraction surfaces is ?n.

Abstract: A lithographic apparatus and method, in an embodiment for immersion lithography, are disclosed with a single stage in which levelling and exposure are performed simultaneously.

Abstract: A method of detecting developer endpoint. The method includes illuminating a device region of a substrate with a first optical beam prior to initiating a development stage of processing and detecting a baseline optical signal reflected from the device region of the substrate. The method also includes illuminating the device region of the substrate with a second optical beam during a development stage of processing and detecting an endpoint optical signal reflected from the device region of the substrate. The method further includes comparing the baseline optical signal to the endpoint optical signal and determining a developer endpoint based on the comparing step.

Abstract: An apparatus and method maintain immersion fluid in the gap adjacent to the projection lens during the exchange of a work piece in a lithography machine. The apparatus and method include an optical assembly that projects an image onto a work piece and a stage assembly including a work piece table that supports the work piece adjacent to the optical assembly. An environmental system is provided to supply and remove an immersion fluid from the gap between the optical assembly and the work piece on the stage assembly. After exposure of the work piece is complete, an exchange system removes the work piece and replaces it with a second work piece. An immersion fluid containment system maintains the immersion liquid in the gap during removal of the first work piece and replacement with the second work piece.

Abstract: For the correction of anamorphism in the case of a projection lens of an EUV projection exposure apparatus for wafers it is proposed to tilt the reticle bearing the pattern to be projected and preferably also the wafer by a small angle about an axis that is perpendicular to the axis A of the lens and perpendicular to the scan direction and that in each instance passes through the middle of the light field generated on the reticle or on the wafer. For the correction of a substantially antisymmetric quadratic distortion the reticle and/or the substrate is instead rotated about an axis of rotation that is disposed at least approximately parallel to an optical axis of the projection lens.

Abstract: The present invention provides methods and apparatus for accomplishing a phase shift lithography process using a off axis light to reduce the effect of zero order light to improve the process window for maskless phase shift lithography systems and methodologies. A lithography system is provided. The lithography system provided uses off axis light beams projected onto a mirror array configured to generate a phase shift optical image pattern. This pattern is projected onto a photoimageable layer formed on the target substrate to facilitate pattern transfer.

Abstract: An exposure apparatus which exposes a pattern of an original onto a substrate through a projection optical system with a space between the projection optical system and the substrate filled with liquid. The apparatus includes a liquid supply nozzle configured to supply the liquid to the space through a liquid supply opening, a liquid supply unit configured to supply the liquid into the liquid supply nozzle, a liquid recovery unit configured to recover the liquid in the liquid supply nozzle by using a vacuum source, and a gas supply unit configured to supply a gas into the liquid supply nozzle through a pipe connected to the liquid supply opening of the liquid supply nozzle. A gas supply by the gas supply unit is started and a liquid recovery by the liquid recovery unit is started while a liquid supply by the liquid supply unit is stopped.

Abstract: A projection optical system includes an optical element that includes and locally uses a reflective or refractive area that is substantially axially symmetrical around an optical axis, the optical element being rotatable around the optical axis.

Abstract: A frame that prevents the decrease in the exposure area by preventing the frame from curving inward by the tensile force of the pellicle membrane and makes it possible to obtain a pellicle having excellent dimensional accuracy and attachment position accuracy on a photomask, and a pellicle for photolithography using the frame. A pellicle frame of the present invention comprises, in at least one pair of opposite side members of a generally rectangular frame body, a portion with an arc form curved outward in the center portion of the side members, portions with an arc form curved inward on both sides of the portion curved outward, and portions with a straightly linear form on the outer sides of the portions curved inward. The radius of the portions with an arc form curved inward is preferably ? or larger of the radius of the portion with an arc form curved outward.

Abstract: A method and apparatus for reduction and prevention of residue formation and removal of residues formed in an immersion lithography tool. The apparatus including incorporation of a cleaning mechanism within the immersion head of an immersion lithographic system or including a cleaning mechanism in a cleaning station of an immersion lithographic system.

Abstract: A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an H2 containing gas in at least part of the apparatus includes producing hydrogen radicals from H2 from the H2 containing gas; and bringing the optical element with deposition into contact with at least part of the hydrogen radicals and removing at least part of the deposition. Further, a method for the protection of an optical element of an apparatus including the optical element includes providing a cap layer to the optical element by a deposition process; and during or after use of the apparatus, removing at least part of the cap layer from the optical element in a removal process as described above. The methods can be applied in a lithographic apparatus.

Abstract: A lithography arrangement and lithographic method is described which permits exposure of a substrate with radiation simultaneously with good intensity and contrast. A means for generating electromagnetic radiation and for directing the electromagnetic radiation onto a mask is provided. The mask has structures that essentially run along a predeterminable course direction on the mask. The electromagnetic radiation is at least partially TM-polarized relative to the course direction, so that the TM-polarized electromagnetic radiation has a polarization direction at an angle of 90° with respect to the course direction. A receptacle device for receiving a substrate to be exposed is positioned so that the radiation impinges on the substrate. A means for rotating the polarization direction of the TM-polarized electromagnetic radiation transmitted through the mask is arranged between the mask and the receptacle device to form TE-polarized electromagnetic radiation.

Abstract: Disclose is a method, program product and apparatus for optimizing numerical aperture (“NA”) and sigma of a lithographic system based on the target layout. A pitch or interval analysis is performed to identify the distribution of critical pitch over the design. Based on the pitch or interval analysis, a critical dense pitch is identified. NA, sigma-in, sigma-out parameters are optimized such that the critical feature will print with or without bias adjustment. For features other than the critical dense features, adjustments are made in accordance with OPC, and lithographic apparatus settings are further mutually optimized. Accordingly, lithographic apparatus settings may be optimized for any pattern concurrently with OPC.

Abstract: A method for arranging a semiconductor wafer within a photolithography tool and methods for processing a semiconductor wafer employing such an arrangement process are provided. The arrangement process includes positioning a semiconductor wafer on a stage in a pre-alignment unit of a photolithography tool such that a crystal orientation marker of the wafer is located at a first radial position. Thereafter, the wafer is moved to an exposure unit of the photolithography tool. During one or both of such steps, the semiconductor wafer is rotated such that the crystal orientation marker is relocated to a second, distinct radial position prior to arranging the wafer upon a stage of the exposure unit. In particular, the semiconductor wafer is rotated greater than approximately 10° and less than approximately 170° relative to the first radial position. The arrangement process is performed for lithography processes conducted during fabrication of a semiconductor device.

Abstract: A method is provided for performing photolithography on a substrate which has a first region on a lower level and a second region on an upper level, wherein a first pattern area exists within said first region, a second pattern area exists within said second region, and at least said first and second regions are coated with a photoresist, the method comprising: a) exposing the photoresist through a first mask so as to expose said first region including said first pattern area, and thus create a first pattern in said first pattern area, but not expose said second pattern area; and b) exposing the photoresist through a second mask so as to expose said second pattern area, and thus create a second pattern in said second pattern area, but not expose said first pattern area, and also to expose an area of said first region which lies adjacent said second region.

Abstract: A reflection mirror apparatus, used in a reflection optical system of an exposure apparatus which performs exposure processing by guiding exposure light by reflection, has a mirror having a reflection surface to reflect the exposure light, and radiation plates for radiation-cooling provided in positions away from an outer surface of the mirror. The radiation plates are provided so as to ensure a passage area for the exposure light incident on and reflected from the reflection surface of the mirror. Further, the respective radiation plates are temperature-controlled by cooling liquid flowing through cooling pipes. Thus the temperature rise of the mirror used in the reflection optical system of the exposure apparatus can be suppressed, and the accuracy of surface form of the mirror reflection surface can be maintained.