Abstract: A method and apparatus make use of data representing changes in wavelength of a radiation source to provide control of focal plane position or to provide correction of sensor data. In the first aspect, the wavelength variation data is provided to control systems that control focus by moving apparatus components including, for example, the mask table, the substrate table or optical elements of the projection optical system. In the second aspect, variation data is used in correcting, e.g., focal plane position data measured by a transmitted image sensor. The two aspects may be combined in a single apparatus or may be used separately.

Abstract: Provided is a method and system for facilitating use of a plurality of individually controllable elements to modulate the intensity of radiation received at each focusing element of an array of focusing elements to control the intensity of the radiation in the areas on the substrate onto which the focusing elements direct the radiation.

Abstract: An immersion lithographic projection apparatus has a liquid confinement structure configured to at least partly confine liquid to a space between a projection system and a substrate, the confinement structure having a buffer surface, when in use, positioned in close proximity to a plane substantially comprising the upper surface of the substrate and of a substrate table holding the substrate, to define a passage having a flow resistance. A recess is provided in the buffer surface, the recess, when in use, being normally full of immersion liquid to enable rapid filling of a gap between the substrate and substrate table as the gap moves under the buffer surface. The recess may be annular or radial and a plurality of recesses may be provided.

Abstract: The present invention relates to an exposure apparatus that includes an illumination system for providing a projection beam of radiation, a support structure for supporting a device provided with a pattern, the device serving to impart the projection beam with a pattern in its cross-section; a table for holding a target object, a projection system for projecting the patterned beam onto the target object and a tilting device for providing the projection beam with a tilt. The tilting device is provided substantially in a pupil plane of the projection system.

Abstract: A multiple exposure system and a multiple exposure method using the same enhance the resolution of the image of the mask pattern transferred to a substrate. The system includes NA controllers that provide excellent resolution with respect to the directions of the short axis and long axis of the mask pattern. In one form of the method, a first exposure process is performed using a first NA controller that provides excellent resolution with respect to the direction of the short axis of the mask pattern and subsequently, a second exposure process is performed using a second NA controller that provides excellent resolution with respect to the direction of the long axis of the mask pattern. Alternatively, the first exposure process and the second or high order exposure process can be sequentially performed using the first and second NA controllers simultaneously.

Abstract: For irradiating a layer a radiation beam is directed and focussed to a spot on the layer, relative movement of the layer relative to the lens is caused so that, successively, different portions of the layer are irradiated and an interspace between a surface of the lens nearest to the layer is maintained. Furthermore, at least a portion of the interspace through which the radiation irradiates the spot on the layer is maintained filled with a liquid, the liquid being supplied via a supply conduit. At least a portion of the liquid fills up a recess through which the radiation irradiates the spot.

Abstract: A lithographic apparatus wherein a dipole illumination mode used for printing a line pattern, is arranged to provide quadrupole illumination. Radiation emanating from the two additional poles and passing the mask pattern without being affected by diffraction is prevented from reaching the wafer by a radiation blocking aperture disposed in the projection system. Astigmatism aberration due to lens heating associated with the dipole illumination mode is reduced by lens heating associated with the additional poles of the quadrupole illumination mode.

Abstract: An exposure apparatus illuminates a pattern with an energy beam and transfers the pattern onto a substrate via a projection optical system. The exposure apparatus includes a substrate stage on which the substrate is mounted that moves within a two-dimensional plane holding the substrate. The apparatus also includes a supply mechanism that supplies liquid to a predetermined spatial area which includes a space between the projection optical system and the substrate on the substrate stage, and an adjustment unit that adjusts exposure conditions based on temperature information on the liquid between the projection optical system and the substrate.

Abstract: The invention is directed to a method for performing a tilted focus test that includes providing a target object, providing a projection beam of radiation using a radiation source, providing at least one reflective device to produce a projected projection beam of radiation onto the target portion, and producing a first projected projection beam of radiation onto the target object using the at least one reflective device in a first orientation. The invention further includes using a tilting device for tilting the at least one reflective device to a second orientation to provide a second projection beam with a tilt relative to said first projection beam, producing a second projected projection beam of radiation onto the target object, determining a lateral shift of the first and second projected projection beams on the target object, and determining from said lateral shift a defocus of the target object with respect to the projected projection beam.

Abstract: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a drying/development processing block, and an interface block. An exposure device is arranged adjacent to the interface block. The drying/development processing block comprises a drying processing group. The interface block comprises an interface transport mechanism. A substrate is subjected to exposure processing by the exposure device, and subsequently transported to the drying processing group by the interface transport mechanism. The substrate is cleaned and dried by the drying processing group.

Abstract: A device manufacturing method according to one embodiment of the invention includes positioning a reflective patterning structure to reflect at least a portion of a beam of radiation as a patterned beam of radiation having a pattern in its cross-section. The method also includes using a projection system to project the patterned beam of radiation to form an image on a target portion of a layer of radiation-sensitive material. Positioning includes at least one among shifting and tilting a nominal reflective surface of the reflective patterning structure with respect to a nominal object plane of the projection system according to a distortion value.

Abstract: A lithographic apparatus is disclosed that has a movable article support configured to hold and move an article, a radiation control system configured to control a beam of radiation to be targeted onto the article, the article support, or both, the article to be moved relatively to the radiation control system by the movable article support for measurement, exposure, or both purposes, and a pressure shield that is mechanically uncoupled from the radiation control system to shield against pressure waves induced by the article support so as to help prevent displacement of the radiation control system caused by the pressure waves.

Abstract: An exposure apparatus comprising an illumination optical system configured to illuminate a reticle with a light beam from a light source, and a projection optical system configured to project a pattern image of the reticle onto a substrate, the illumination optical system including a light-shielding member which is arranged near a plane conjugate to a pupil plane of the projection optical system and which can move along an optical axis of the illumination optical system, wherein the light-shielding member is moved such that a light intensity distribution on the pupil plane of the projection optical system becomes nonuniform.

Abstract: A resist pattern forming apparatus comprising a controller having a controlling portion that controls a processing of a coating and developing apparatus with a coating unit and a developing unit being provided therewith and an aligner being connected thereto, while an inspecting portion and the like measures at least one of a plurality of measurement items selected from, a reflection ratio and a film thickness of a base film and a resist film, a line width after the development, an accuracy that the base film matches with a resist pattern, a defect after the development, and so on. The measured data is transmitted to the controller. At the controller, a parameter subject to an amendment is selected based on the corresponding data of each of the measurement item such as the film thickness of the resist and the line width after the development, and the amendment of the parameters subject to the amendment is performed.

Abstract: An immersion lithographic apparatus includes a liquid supply system member configured to contain a liquid in a space between a projection system of the lithographic apparatus and the substrate and a liquid supply system member compensator arranged to compensate an interaction between the liquid supply system member and substrate table.

Abstract: An exposure method forms an immersion area in at least a part of a substrate including a projection area of a projection optical system and projects an image of a mask pattern onto the substrate through liquid between the projection optical system and the substrate. Distribution of the mask pattern is measured (S1) and adjustment is made so that a desired image of the pattern is projected onto the substrate according to distribution of the exposure light incident into the liquid between the projection optical system and the substrate when exposing the substrate (S4 to S6). It is possible to expose the substrate with the pattern accurately regardless of the distribution of the mask pattern.

Abstract: A lithography apparatus includes a resist processing apparatus to perform a process of applying a resist on a substrate, a process of heating a resist film on the substrate, and a process of developing the resist film on the substrate, an immersion exposure apparatus including a projection optical system which projects an image of a pattern on a photomask onto the resist film and configured to perform exposure through liquid located on an optical path between the projection optical system and resist film, a transporting apparatus connected to the resist processing and immersion exposure apparatuses to perform transportation of the substrate between the resist processing and immersion exposure apparatuses, and a temperature/humidity control apparatus configured to control at least one of temperature and humidity in at least one of the resist processing and transporting apparatuses based on temperature and humidity or the in humidity the immersion exposure apparatus.

Abstract: An exposure apparatus configured to expose a substrate to radiant energy via an original plate while scanning of the original plate and the substrate are performed including a projection optical system configured to project light from the original plate onto the substrate, an original plate configured to hold the original plate and to be moved a substrate stage configured to hold the substrate and to be moved a measurement device configured to measure a position of a surface of a substrate facing the projection optical system in a direction of an optical axis of the projection optical system a processor configured to control a movement of the original plate stage, a movement of the substrate stage, and an operation of the measurement device, and an input device configured to input information about a measurement portion in the surface to be measured by the measurement device.

Abstract: The present invention provides a projection optical system which projects an image on a first object plane onto a second object plane, comprising a plurality of optical members inserted in turn from a side of the second object plane, said plurality of optical members being made of an isotropic crystal and including a first optical member and second optical member in each of which <1 1 1> crystal axes are oriented in a direction of an optical axis and a third optical member in which <1 0 0> crystal axes are oriented in the direction of the optical axis, wherein maximum angles ?1, ?2, and ?3 between the optical axis and light beams passing through said first optical member, said second optical member, and said third optical member, respectively, satisfy |?i??j|<5° (i, j=1, 2, 3).

Abstract: An immersion lithography apparatus is disclosed in which liquid is supplied to a space between a projection system and a substrate, and a plate structure is provided to divide the space into two parts. The plate structure has an aperture to allow transmission of the projection beam, has through holes in it to reduce the damping effect of the presence of the plate and optionally has one or more inlets and outlets to provide various flows around the aperture in the plate. An embodiment of the invention may reduce the transportation of contaminants, stray light, temperature gradients, and/or the effect of bubbles on the imaging quality.