Abstract: A CMP polishing liquid comprises water and an abrasive particle, wherein the abrasive particle comprises a composite particle having a core including a first particle, and a second particle provided on the core, the first particle contains silica, the second particle contains cerium hydroxide, and the pH of the CMP polishing liquid is equal to or lower than 9.5.

Abstract: Methods of selectively etching metals and metal nitrides from the surface of a substrate are described. The etch selectively removes metals and metal nitrides relative to silicon-containing layers such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The etch removes material in a conformal manner by including an oxidation operation which creates a thin uniform metal oxide. The thin uniform metal oxide is then removed by exposing the metal oxide to a metal-halogen precursor in a substrate processing region. The metal oxide may be removed to completion and the etch may stop once the uniform metal oxide layer is removed. Etches described herein may be used to uniformly trim back material on high aspect ratio features which ordinarily show higher etch rates near the opening of a gap compared to deep within the gap.

Abstract: The present invention relates to an aqueous composition for and a process for etching copper and copper alloys applying said aqueous composition. The aqueous composition comprises a source for Fe3+ ions, at least one acid, at least one triazole or tetrazole derivative, and at least one etching additive selected from N-alkylated iminodipropionic acid, salts thereof, modified polyglycol ethers and quaternary ureylene polymers. The aqueous composition is particularly useful for making of fine structures in the manufacture of printed circuit boards, IC substrates and the like.

Abstract: The present invention provides a slurry for chemical mechanical polishing, containing abrasive grain (a), compound (b) having an amino group having a pKa of more than 9, and not less than 3 hydroxyl groups, and water.

Abstract: A slurry for polishing a phase change material, such as Ge—Sb—Te, or germanium-antimony-tellurium (GST), includes abrasive particles of sizes that minimize at least one of damage to (e.g., scratching of) a polished surface of phase change material, an amount of force to be applied during polishing, and a static etch rate of the phase change material, while optionally providing selectivity for the phase change material over adjacent dielectric materials. A polishing method includes applying a slurry with one or more of the above-noted properties to a phase change material, as well as bringing the polishing pad into frictional contact with the phase change material. Polishing systems are disclosed that include a plurality of sources of solids (e.g., abrasive particles) and provide for selectivity in the solids that are applied to a substrate or polishing pad.

Abstract: There is provided a manufacturing method of a semiconductor device having an N-type semiconductor layer on a P-type semiconductor layer. The manufacturing method comprises: a dry etching process of performing dry etching to go through the N-type semiconductor layer in a thickness direction and make the plane in the thickness direction of the P-type semiconductor layer exposed; and a annealing process of annealing the P-type semiconductor layer in an atmosphere containing oxygen, after the dry etching process. This manufacturing method improves the electrical properties of the P-type semiconductor layer.

Abstract: A polishing composition of the present invention contains a water-soluble polymer and abrasive grains. The water-soluble polymer is an anionic compound having an acid dissociation constant pKa of 3 or less. Specific examples of such a compound include polyvinylsulfonic acid, polystyrenesulfonic acid, polyallylsulfonic acid, polyethyl acrylate sulfonic acid, polybutyl acrylate sulfonic acid, poly(2-acrylamide-2-methylpropanesulfonic acid), and polyisoprenesulfonic acid. The abrasive grains exhibit a negative zeta potential at a pH of 3.5 or less. Specific examples of such abrasive grains include colloidal silica.

Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, a polyhydroxy aromatic compound, a polyvinyl alcohol, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

Abstract: A method of manufacturing a touch screen panel, including forming first and second conductive layers and an organic insulating layer on a substrate; forming a first organic insulating pattern having a first thickness and a second organic insulating pattern having a second thickness, the second thickness being larger than the first thickness; forming first and second conductive patterns; exposing a part of the second conductive pattern to form a third organic insulating pattern having a thickness smaller than the second thickness; removing the exposed second conductive pattern; forming an organic insulating capping layer surrounding the first and second conductive patterns positioned under the third organic insulating pattern; and forming a third conductive layer on the first conductive pattern and the organic insulating capping layer, the first conductive pattern being exposed, and then forming a connection pattern electrically connected with the exposed first conductive pattern using a second mask.

Abstract: A method for processing substrate in a chamber, which has at least one plasma generating source, a reactive gas source for providing reactive gas into the interior region of the chamber, and a non-reactive gas source for providing non-reactive gas into the interior region, is provided. The method includes performing a mixed-mode pulsing (MMP) preparation phase, including flowing reactive gas into the interior region and forming a first plasma to process the substrate that is disposed on a work piece holder. The method further includes performing a MMP reactive phase, including flowing at least non-reactive gas into the interior region, and forming a second plasma to process the substrate, the second plasma is formed with a reactive gas flow during the MMP reactive phase that is less than a reactive gas flow during the MMP preparation phase. Perform the method steps a plurality of times.

Abstract: A method for cutting a substrate of irregular pattern includes: forming a cutting line on the substrate, wherein the closed region enclosed by the cutting line is the irregular pattern that is required; forming a trough line at the cutting line; and applying an external force to the substrate so as to divide the substrate at the trough line. The method can remarkably improve accuracy and efficiency of cutting a substrate of irregular pattern.

Abstract: Disclosed is an etching method for etching an etching target layer. The etching method includes: a first step of depositing a plasma reaction product on a mask layer made of an organic film formed on the etching target layer; and after the first step, a second step of etching the etching target layer. The mask layer includes a coarse region in which a plurality of openings are formed, and a dense region surrounding the coarse region. The mask layer exists more densely in the dense region than in the coarse region. The coarse region includes a first region and a second region positioned close to the dense region compared to the first region. In the second step of the etching method, a width of the openings in the first region becomes narrower than a width of the openings in the second region.

Abstract: A gas processing method is described. A workpiece is mounted on a platform in a chamber on which a silicon oxide film is formed on a surface of the workpiece; HF gas and a NH3 gas, as reaction gases, are discharged onto the workpiece on the platform from a plurality of gas discharge holes of a shower plate; and a treatment for causing a reaction between the reaction gases and the silicon oxide film on the surface of the workpiece is performed. Subsequently, the reaction product resulting from the treatment is heated and removed by decomposition, whereby etching is performed. The shower plate is divided into a plurality of regions in correspondence with the workpiece, and the gas discharge holes in one or more of the regions are blocked to control a distribution of at least one of the HF gas and the NH3 gas.

Abstract: A method for processing a substrate, the substrate comprising an organic film pattern, the method comprising: a fusion/deformation step of fusing said organic film pattern to deform the fused organic film pattern and a third removal step of removing at least a part of the fused and deformed organic film pattern.

Abstract: Etching a feature of a structure by an etch system is facilitated by varying supply of radio frequency (RF) power pulses to the etch system. The varying provides at least one RF power pulse, of the supplied RF power pulses, that deviates from one or more other RF power pulses, of the supplied RF power pulses, by at least one characteristic.

Abstract: Disclosed is a plasma processing device that provides an object to be treated with plasma treatment. A wafer as an object to be treated, which is attached on the upper surface of adhesive sheet held by a holder frame, is mounted on a stage. In a vacuum chamber that covers the stage therein, plasma is generated, by which the wafer mounted on the stage undergoes plasma treatment. The plasma processing device contains a cover member made of dielectric material. During the plasma treatment on the wafer, the holder frame is covered with a cover member placed at a predetermined position above the stage, at the same time, the wafer is exposed from an opening formed in the center of the cover member.

Abstract: A substrate treatment method includes the steps of: supporting a substrate with a support member; arranging an extension surface such that the extension surface laterally surrounds one major surface of the substrate supported by the support member and extends continuously to the major surface of the substrate supported by the support member; rotating the substrate supported by the support member; and etching the substrate by supplying an etching liquid onto the major surface of the substrate supported by the support member, wherein the extension surface has higher affinity for the etching liquid than the major surface of the substrate supported by the support member.

Abstract: System and methods for plasma processing of a wafer include a chamber with an electrode having a support surface and an outer edge region defined thereon. A radio frequency power is communicated to the electrode via a conductive delivery connection and returned through a conductive return connection. A capacitance is applied to a first end that causes appropriate capacitive adjustment and opposite impedance adjustment at a second end of the conductive delivery connection that is coupled to a dielectric surround structure that surrounds the electrode. The dielectric surround structure presents the opposite impedance adjustment near an outer edge of the electrode, such that increasing the capacitance at the first end causes a corresponding increase of impedance at the second end and a corresponding increase in voltage distribution near the outer edge region of the electrode that decreases toward a center of the support surface of the electrode.

Abstract: An oxide etching method includes loading an object to be processed, on a surface of which a patterned silicon oxide film is formed, in a chamber, supplying HF gas and NH3 gas as reactant gases and a diluent gas to the chamber to conduct a reaction treatment in which the HF gas and the NH3 gas are reacted with the silicon oxide film. Thereafter, a heating process is performed to remove a reaction product generated by the reaction treatment. In the reaction treatment, a pressure in the chamber is increased to a predetermined value by increasing a flow rate of the diluent gas so that no etching residue remains and an etching shape has high verticality after the heating process.

Abstract: A tunable plasma etch process includes generating a plasma in a controlled flow of a source gas including NH3 and NF3 to form a stream of plasma products, controlling a flow of un-activated NH3 that is added to the stream of plasma products to form an etch gas stream; and controlling pressure of the etch gas stream by adjusting at least one of the controlled flow of the source gas and the flow of un-activated NH3 until the pressure is within a tolerance of a desired pressure. An etch rate of at least one of polysilicon and silicon dioxide by the etch gas stream is adjustable by varying a ratio of the controlled flow of the source gas to the flow of un-activated NH3.