Abstract: An apparatus for regulating the evaporation rate of oxidizable substances in reactive vacuum deposition by the metered addition of oxygen to a vacuum deposition chamber during deposition, wherein the addition of oxygen to a predetermined value, the pressure "p" in the vacuum chamber is measured, and the evaporation rate "r" for any pressure changes is regulated such that the ratio of pressure to evaporation rate p:r is maintained substantially constant.

Abstract: Printed circuit boards which are to be tin-plated pass through a liquid application station in a horizontal direction, and thereafter through an activation station for the activation of the applied liquid. Then the printed circuit boards arrive at a receiver element of substantially U-shaped cross-sectional configuration, which subsequently is pivoted about a horizontal pivot shaft, out of a horizontal take-up position into a vertical transfer position. During this pivotal movement the printed circuit board bears upon a support element or part which supports the printed circuit board. By means of grippers the printed circuit board, previously brought by the receiver element into a vertical position, is immersed in vertical position into a solder bath. After a certain residence time the printed circuit board is inserted by the gripper into a further receiver element likewise having a U-shaped cross-sectional configuration, this receiver element being located in a vertical receiving position.

Abstract: For certain related dimensions of features of a nozzle feeding a fluidized bed reactor from below, it has been found that a central flow of a coating gas is squeezed down in diameter in passing through a constriction at the nozzle end by the action of the surrounding dilution gas flow, without the setting up of turbulence such as might have been expected, which would cause deposits from the decomposition of the coating gas at the constriction. The spacing between the mouth of the central tube that feeds the coating gas and the constriction at the end of the nozzle should be in the range of 20 to 70 mm, the diameter of the constriction aperture should be in the range from 3 to 10 mm and the diameter of the central channel should be greater than the constriction aperture diameter but not more than 3.5 times the latter diameter. For coating particles having a density of about 10 g/m.sup.3 and a diameter of about 200 .mu.m , the constriction aperture diameter should not exceed 7 mm.

Abstract: A method for wiping coated wire or strip which emerges vertically from a bath of molten metal, wherein the coated wire or strip, passes vertically through a pad wiping zone located above and spaced apart from the bath of molten metal. A pad wiping assembly is provided above the bath of molten metal and is adjustable by adjustment means from a position exterior the bath of molten metal.The pad wiping assembly includes pad wiping material in the form of compressed non-combustible material and strip or wire wiping pads are replaceable.

Abstract: Heat treating stranded together conductors in a reeled condition by passing electrical current along a path through some of the conductors in one direction around the reel and then through other conductors in the opposite direction around the reel. In preferred methods, the current is passed in one direction through one half of the conductors and then in the opposite direction through the other half.

Abstract: A protective mask for protecting a portion of a surface area of a generally non-porous member wherein the portion of the area to be protected is substantially smooth. The mask encloses a housing having a back face and a plurality of enclosing side walls, suction means for attaching the mask to the member, and release means.

Abstract: A device for simultaneously producing a plurality of substrate disks each having a plurality of different layers by a liquid phase epitaxy as each substrate disk is moved sequentially through different melts contained in the liquid phase characterized by a first unit having tongues slidably received therein and a plurality of chambers spaced along the direction of sliding of said tongues, a second unit having a crucible for each of said chambers being disposed for relatively movement on the first unit from a position with the crucible out of communication with the chamber to a position in communication for transferring the melt from the crucible to the chamber and each of the said tongues having aligned recesses for receiving the substrate disk so that a row of substrate disks can be passed from one chamber to the next following chamber so that the disks in each row receive epitaxial layers sequentially.

Abstract: A workpiece holder for semiconductor workpieces during treatment with a substantially cylindrical casing shaped like a hockey puck having an upper surface for receiving a workpiece, a lower surface, at least one bore between the surfaces for applying a vacuum and a hollow interior for a heat absorbing composition preferably one which melts above ambient temperature but below temperatures which might damage workpieces. Suitable compositions include Glauber's salt, and calcium chloride hexahydrate. In one embodiment, curved, substantially radially extending vanes are preferably provided in the interior space for causing radial flow when the casing is rotated or oscillated. In a second embodiment, a plurality of bores extend between a manifold which extends radially and a plurality of circumferential grooves.

Abstract: A process for carrying out chemical vapor deposition under increased pressure is provided. By carrying out chemical vapor deposition under increased pressure, a boundry layer of reduced thickness is formed which permit formation of a chemical vapor reaction film in the minute necking portions on the surface of the substrate formed during formation of the electrical components, such as a transistor or an integrated circuit. The step of chemical vapor deposition under increased pressure may be followed by chemical vapor deposition at normal or reduced pressure for forming a film of uniform thickness across the wafer.

Abstract: Erosion and abrasion resistant refractory metal carbide articles are provided having multiphase alloy of borides including titanium boride, binder metal boride, and titanium-binder metal-refractory metal borides by diffusion of titanium initially to convert the refractory metal carbide to its constituents which are then reacted with boron, forming a new added surface in replacement of the original article surface, and bridging the original surface locus.

Abstract: The present invention is a method for forming a cohesive display object and associated display items. The invention contemplates a display object which is at least partially covered with flock (crushed fiberous material, such as rayon) and at least one display item which back side is at least partially covered with flock. The method comprises the steps of coating at least part of the surface of the display object and the back of the display item with a non-drying adhesive; then covering the coated surface with flock. Contact of the adjacent flock-coated surfaces of the display object and items will create a cohesive force and removably secure the display item to the display object.

Abstract: A plasma deposition apparatus having a plasma formation chamber and a specimen chamber which are arranged separately. Gaseous material and microwave power are introduced to the plasma formation chamber to generate plasma by a microwave discharge through electron cyclotron resonance. The plasma is extracted to the specimen chamber from the plasma extracting orifice. In the specimen chamber, the plasma is accelerated by the effect of divergent magnetic field to irradiate the surface of the specimen so as to deposit a thin film on the specimen substrate. A high-quality thin film is formed with a high efficiency at a low temperature. Accordingly, a thin film can be deposited on a specimen substrate having a low heat resistivity. The plasma deposition apparatus is useful for manufacturing various kinds of electronic devices.

Abstract: A method and resulting apparatus for implementing a unique optical sensor that is adapted to be interfaced with a low cost, compact fiber-optic transmission system to provide an accurate indication of a sensed physical parameter (e.g. temperature) of a remote sample. The sensor is fabricated so as to include a semiconductor material that has optical-wavelength-dependent filter characteristics that may be varied as a function of a physical parameter such as temperature.In one embodiment, a graded optical filter fabricated by using thin-film deposition techniques on an amorphous semiconductor material, provides position responsive high-pass filter characteristics. Such filter characteristics are then utilized by moving a light source as a function of a physical parameter and generating an optical signal therefrom having a cutoff frequency dependent upon the position of the light source.

Abstract: An apparatus to deposit material on a substrate, such as in the making of thin solar cells, consists of two chambers. A manifold chamber having a plurality of spaces nozzles assures efficient and uniform deposition on a substrate. The rate of depositions is controlled by an orifice in a passageway connecting the manifold chamber to an evaporation chamber.

Abstract: An apparatus for applying an epoxy glue, solder paste or a similar material to the surface of a planar circuit chip, such as a silicon integrated circuit chip. Positioned just above the liquid epoxy in the bath is a fine mesh, stainless steel screen clamped at its periphery and having supported thereover a leveling paddle with a micrometer adjustment rotatable relative to the bath itself for smoothing the material over the screen surface. After this smoothing or leveling operation, the chip, usually held by a vacuum chuck, is pressed against the screen into the epoxy with the screen functioning as a resilient means enabling the chip to be withdrawn therefrom with uniform deposition of material applied to the undersurface thereof. The apparatus may also have a spongy material such as polyurethane or a sponge neoprene rubber under the screen to enhance chip removal.

Abstract: A contact structure in a double polysilicon device is described in which direct shorts between overlying polysilicon conductors due to a "polysilicon void phenomenon" is overcome by patterning an appropriate etch stop between the conductors.

Abstract: A spinner comprises a rotating spindle for causing a workpiece to spin at a high speed, and a cup disposed around the spindle and provided at a bottom wall thereof with a port for air evacuation. The cup comprises a deflector ring disposed in the interior of the cup and extending inwardly, the deflector ring having an annular barrier at the inner peripheral edge for defining steps projecting from the upper and lower surfaces of the ring, respectively, and the barrier having an inner peripheral surface formed to diverge at least upwardly with respect to the axis of the spindle.

Abstract: In a vacuum container an active (or atomic state) gas consisting of either one of active hydrogen, active oxygen and active nitrogen with a partial pressure of 1.times.10.sup.-3 Torr or less is produced. In an atmosphere of the active (or atomic state) gas, a film, which consists of a compound presenting semiconductor characteristics (CdS, CdSe, ZnSe, ZnS, ZnTe, CdTe) or a solid solution thereof and presents a desired polarity property such as p, n, p.sup.+ or n.sup.+, is vapor-deposited on a substrate at a desired position with a desired thickness, so as to fabricate an evaporation device which is preferable, for example, as a photoconductive target for a television camera tube.

Abstract: Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.

Abstract: This invention relates to coating of substrates in a vacuum system. A beam of molecules incident upon a molecular beam converter is transformed into a molecular beam flowing from the converter toward a substrate to be coated, or on which a layer is to be grown epitaxially. The incident beam is directed onto a heated impingement surface. In most embodiments the impingement surface generally faces the substrate to be coated, and the incident beam strikes the surface from the substrate side. A heating means maintains the impingement surface at a designated temperature. The heating means is separated and shielded from the impingement surface to avoid introducing contaminants from the heating means into the converted molecular beam, and also to avoid adverse physical and chemical effects on the heating means caused by the incident beam and its dissociation products.