Abstract: A method of evaporating an evaporative substance under vacuum comprises bombarding the evaporative substance with electrons from a low voltage arc discharge established between a cathode and an anode which is located in an evaporation chamber and simultaneously supplying additional power for evaporation to the evaporative substance by means of an electron gun which produces an electron energy in excess of one keV. A device for carrying out the invention comprises an evacuable bowl, an evaporation chamber with a receptacle therein for a substance to be evaporated and means for establishing a low voltage arc discharge between a cathode and an anode located in the evaporation chamber, a further provision of an electron gun for bombarding the substance with electrons which has an electron energy more than one kilovolt.

Abstract: Briefly, the apparatus in accordance with this invention features an energy coaxial feedthrough fix-mounted in the wall of the vacuum chamber for supplying electrical and mechanical energy from sources located externally of the vacuum chamber to within the vacuum chamber. Additionally, the apparatus includes a movable coaxial coupler capable of releasably engaging the coaxial feedthrough and additionally releasably latching a substrate holder. Finally, the apparatus includes a linkage assembly located within the chamber connected to the coupler so that the coupler may be located in a first position proximate an access port in the chamber wall to facilitate quick and convenient loading of a substrate holder and a second position in which the coupler may be connected to the feedthrough for uniformly transmitting electrical and mechanical energy to the substrate holder and the substrates thereon.

Abstract: The apparatus comprises a nozzle (2) having three converging tuyeres (3, 4, 5) which project the reagents (SnCl.sub.4 and H.sub.2 O) in the gaseous phase onto the substrate to be plated. Deflector members (6a, 6b), which are adapted to channel the gases between themselves and the substrate, extend on either side of the nozzle (2). The surface (51) of the deflector member (12) which extends in the opposite direction to the direction of movement of the substrate with respect to the nozzle is parallel to the substrate, and the edge (53) which it forms at an acute angle with the extended external wall (5b) of the third tuyere (5) is transversely offset in the direction of the said movement with respect to the axial median plane of the tuyere (3). On the other hand, the surface (52) of the second deflector member (5a) forms a blunt edge (54) with the corresponding longitudinal wall (4b) of the second tuyere.

Abstract: The specification discloses a low-temperature process for depositing a layer of a sulfide of a chosen element, such as zinc sulfide, on the surface of a substrate while simultaneously avoiding damage to the substrate. The process comprises exposing the substrate to a selected vapor phase reactant containing the chosen metal, such as dimethyl zinc, in the presence of neutral, charge-free sulfur atoms formed in a manner which avoids the generation of charged particles and high energy radiation that would damage the substrate. The sulfur atoms react with the vapor phase reactant to form the sulfide thereof, such as zinc sulfide, which deposits as a layer on the surface of the substrate. In a preferred process embodiment, the neutral sulfur atoms are generated by photochemical dissociation. In addition, there is disclosed a process for forming a native sulfide layer on the surface of a chosen substrate by exposing the substrate to neutral, charge-free sulfur atoms.

Abstract: An apparatus for producing improved large area photovoltaic devices by substantially reducing the warpage of relatively large area, relatively thin webs of magnetic substrate material which travel through a plurality of high temperature, low pressure glow discharge deposition chambers. As the web of the substrate material moves through the deposition chambers, it assumes a normal, elongated path of travel. Due to the elevated deposition temperature, the elongated path of travel, the force of gravity, etc., the web has a tendency to warp. Warpage of the web is undesirable as it promotes the deposition of non-uniform semiconductor alloy layers. The improvement of the present invention contemplates the establishment of at least one magnetic field within each deposition chamber which is adapted to urge the web of substrate material out of its normal path of travel into a flat, substantially planar path of travel.

Abstract: The formation of a body of material on a substrate having at least two layers of different composition is made possible by the improved system and method of the present invention with minimized cross contamination between the respective deposition environments in which the layers are deposited. The disclosure relates more specifically to the use of the system and method for the deposition of multi-layered amorphous silicon alloys to form photovoltaic devices. As a preferred embodiment of the invention, first, second, and third glow discharge deposition chambers are provided for depositing respective first, second, and third amorphous silicon alloy layers on a substrate. The second layer is substantially intrinsic in conductivity and differs in composition from the first and third layers which are of opposite conductivity type by the absence of at least one element.

Abstract: A grooved passageway surface in a magnetic gas gate, the gas gate adapted to operatively connect two adjacent chambers, in the first chamber of which process gases are introduced for depositing a first layer upon a magnetic substrate and in the second chamber of which process gases are introduced for depositing a second layer atop the first layer. Since it is important to prevent the second chamber gases from contaminating the first chamber gases, a constant pressure differential established between the chambers is employed to provide a substantially unidirectional flow of gases from the first chamber into the second chamber. Magnetic gas gates have been used in the prior art to reduce the size of gas gate passageways by creating a magnetic field which urges the unlayered surface of the substrate toward a wall of the passageway.

Abstract: Installation for the deposition of thin layers in the reactive vapor phase by plasma.The installation comprises a coaxial conductor, whose core is hollow and is used for introducing gas into a chamber having a row of openings. The conductor is also used for introducing the high frequency field necessary for exciting the gas. A substrate or sample holder moves beneath the row of openings.Application to the deposition of thin layers with a large surface.

Abstract: A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

Abstract: A simple and efficient method of manufacturing a syringe needle is provided herein, which involves spreading a resin solution on the entire inside and outside of a cut stainless steel tube having the dimensions of a syringe needle, hardening the resin on the inside and outside of said cut tube, removing the hardened resin from the outside of the cut tube, grinding one end of the tube with a grinder to form a main bevel, changing the contact angle between the grinder and the cut tube to form side bevels to produce a syringe needle tube having a piercing point at the ground edge of said tube, and washing away grinding materials and pollutants from the tube.

Abstract: Apparatus for sensing deposition of a thin film layer of a material from a source onto a substrate having a carriage assembly including a predetermined number of apertures for selectively passing predetermined portions of a material from the source along each of a plurality of predetermined paths located in the proximity of the substrate under conditions correlated to that under which the material is deposited through a deposition path onto the substrate, inhibiting elements positioned relative to the carriage assembly for selectively inhibiting passage of predetermined portions of the material through a selected number of the predetermined number of the apertures, and a monitor for monitoring a selected parameter of the thin film material which is passed through other than the selected number of apertures of the carriage assembly wherein the monitor includes a plurality of detectors one of each of which is positioned along one of the plurality of predetermined paths and being adapted to sense a predetermined

Abstract: Silicon carbide shapes of the general type shown and described in U.S. Pat. No. 4,125,756 are densified and nitrided in such a way as to produce shapes with improved durability and reduction in temperature span in response to voltage changes.

Abstract: Apparatus for sensing deposition of a thin film layer of a material from a source onto a substrate having a carriage assembly including a predetermined number of apertures for selectively passing predetermined portions of a material from the source along each of a plurality of predetermined paths located in the proximity of the substrate under conditions correlated to that under which the material is deposited through a deposition path onto the substrate, inhibiting elements positioned relative to the carriage assembly for selectively inhibiting passage of predetermined portions of the material through a selected number of the predetermined number of the apertures, and a monitior for monitoring a selected parameter of the thin film material which is passed through other than the selected number of apertures of the carriage assembly wherein the monitor includes a plurality of detectors one of each of which is positioned along one of the plurality of predetermined paths and being adapted to sense a predetermine

Abstract: An apparatus for chemically activated depositing in a plasma. Said apparatus includes a chamber (1) in which a vacuum is maintained, said chamber being closed by means of a top plate (2) and a bottom plate (3) which are removable. Said apparatus further includes a substrate support (5) disposed about said axis, a reactive gas distributor manifold and means (4) for setting up a plasma inside said chamber (1). Said manifold (8) has two circular end portions (9,10) interconnected by pipes (11) in which gas outlet orifices are provided; said pipes being rotatable at a uniform speed about the axis of the chamber inside said substrate support; said support being of polygonal cross-section and constituted by rectangular longitudinally extending facets on which the substrates (7) are deposited.The invention is used to deposit chromium, silicon, aluminium and the like.

Abstract: Apparatus for manufacturing metal layers and glow polymer layers which are superimposed and laterally offset relative to one another has two vacuum chambers which are separated from one another by air locks and has a cylinder with cavities in the surface thereof in which substrates for the layers are mounted on supports. Each cavity includes a displaceable diaphragm with a diaphragm aperture structure through which the layers are deposited. The cylinder, together with lock jaws, forms the air locks, so that the supports traverse both vacuum chambers. In a first vacuum chamber structures are provided for the manufacture of glow polymer layers and in a second vacuum chamber metallization structures are provided for the manufacture of the metal layers. In each cavity devices are provided for the displacement of the diaphragms between the glow polymer and metallization chambers.

Abstract: This invention relates to a process of selective galvanizing of materials adapted to be galvanized by immersion in hot conditions characterized by the application on said materials, prior to immersing them into a bath of melted zinc, on those spots on which no galvanizing is desired, calcium carbonate alone, or a mixture thereof with an alkali metal chlorinated-s-triazine trione, or with an alkali metal salt of an oxygen-containing chlorine compound.

Abstract: A chemical vapor deposition reactor (40) is disclosed. The reactor (40) has a vertically mounted tube (43), axially disposed within a chamber (41). A plurality of spaced, planar, wafer holders (44--44), having resistance heated portions (45--45) thereon, are fixedly mounted to and radially extend from the tube (43). Silicon wafers (13--13) are placed on the resistance heated portions of the holders (44--44) and reactant gases are caused to radially flow through apertures (91--91) in the tube (43), between adjacent heated holders (44--44) and across the surface of the wafers (13--13) to deposit doped silicon thereon. Undeposited reactants and gases are removed via an axisymmetric exhaust port 81.

Abstract: Non-aqueous solvents are removed from a substrate, e.g., paper, by contacting the substrate with a condensable, vaporous heat transfer medium that is in a superheated state, e.g., superheated steam, and maintaining said substrate in contact with said superheated heat transfer medium, while also maintaining said heat transfer medium in superheated state, for a period of time sufficient to effect removal of said non-aqueous liquid from said substrate without concomitant condensation of said superheated heat transfer medium thereon. The superheated heat transfer medium, as well as being the source of energy for evaporating the solvent, acts as a solvent vapor transport medium. Upon evaporation of the solvent, the solvent vapor-heat transfer medium mixture can be sent to a recovery zone to easily recover said solvent via condensation of the mixture and thereby avoid the discharge of said solvent vapors into the atmosphere.

Abstract: A nozzle beam source for use in the vapor deposition of electrode materials such as gold, during the fabrication of precision quartz-crystal resonators, or the like. The nozzle beam source includes a graphite crucible and source tube, a tungsten wick within the source tube, and graphite-to-graphite mechanical seals.

Abstract: A method for manufacturing a semiconductor integrated circuit device having contact apertures with finely-controlled dimensions of 1 .mu.m or less. An ion bombardment layer is formed by bombarding predetermined portions of the substrate of the semiconductor device with nitrogen ions using a direct ion beam imaging technique. The ion bombardment layer is converted into an oxidation-resistant layer by annealing, and an insulating oxide layer is formed on the surface of the substrate in regions other than those on which the oxidation-resistant layer is formed by oxidation. Thereafter, contact recesses are formed upon removing the oxidation-resistant layer.