Abstract: An arrangement of articulated grippers for holding a substrate such as a shoe upper to be treated with a reinforcing substance onto a rotatable cube for pressing against a carrier belt of a reinforcing machine. The gripper comprise arms arranged on two sides of a biased plate, each arm being pivotable about a pintle, the arms each having an end which has a wheel in rolling contact with an extension of the biased plate, the other end of each arm having a pivotable flange which is contactable with the outer surface of a substrate loaded onto the biased plate, so as to hold that substrate thereon as the cube rotates during subsequent machine operation.

Abstract: Semiconductive wafers are processed, i.e., etched or layers deposited thereon, by means of a plasma enhanced chemical vapor processing system wherein the plasma is generated by a train of R.F. power pulses. The pulse repetition rate, pulse length and peak power level of the individual pulses are independently variably controlled to variably control the uniformity of the processing of the semiconductive wafers within the processing gaps.

Abstract: An apparatus for chemically vapor-depositing silicon material on surfaces of a plurality of substrates arranged in a stack that is continuously rotating. A gas distributor formed of a pair of coaxially tubes, in fixed relation with the rotating substrates, provides a pair of gas streams from a pair of parallel slots extending lengthwise of the tube facing the substrates. Gas input through the inner tube is passed through holes conducting gas from the inner tube to the outer tube and into the chamber as two gas streams. Substantially uniform deposition is achieved within .+-.5% with gas high deposition rates effected by high flow gas streams that are not turbulent.

Abstract: Installation for treatment of materials for semi-conductors, starting from slices (30) gathered onto carriers (5) and treated in a series of vacuum chambers. The installation is in modular form, each module (A, B, C, D) including a straight tubular portion (1, 2, 3, 4) which forms with the adjacent modules a continuous tunnel for straight flow of the carriers (5). The carriers are driven and the slices are individually manipulated between the carriers and the treatment apparatus. The invention is applicable to treatment by epitaxis by molecular jets.

Abstract: A bell made of opaque fused silica and intended for use in the deposition of polycrystalline silicon is assembled from at least three individual sections. The sections are joined to one another at end flanges with gaskets between the flanges. The lengths of the individual sections are determined by the temperature distribution along the bell in use.

Abstract: A fluidized bed furnace for coating fuel particles for nuclear reactors, ticularly high temperature reactors, can be emptied without cooling down the reaction tube by substituting an inert gas for the coating gas and then lowering the inner tube through which this gas is fed so as to clear a passage in the surrounding outer gas feed tube through which the kernels may fall down to a diverting device in the intermediate space between the inner and outer tubes that guides the kernels to a discharge tube. The reaction tube is emptied by lowering the feed gas pressure by cutting off the carrier gas flow and regulating the escape of the inert gas through an overflow pipe. After the reactor is emptied, the flow of carrier gas can be restored and the overflow pipe shut, so that the reactor can be refilled, after which the flow of coating gas is restored and another coating operation can begin without delay.

Abstract: To secure accurate control over rapid diffusion such as the diffusion of zinc into gallium arsenide, the source and slices to be processed are isolated from one another during an initial warm-up period. This is done using one vessel for the crystal slice and a second vessel for the source. The source vessel initially blocks an opening in the slice vessel while the source and slice are brought to the desired diffusion temperature. The source vessel is then slid through the opening to a diffusing position in which a trailing part of the source vessel again plugs the opening in the slice vessel and in which an open part of the source vessel is now in the interior of the slice vessel. Use of this arrangement avoids the uncontrolled diffusion which occurs in current diffusion capsules during initial heating of the capsule.

Abstract: A method and a multiple chamber apparatus for the continuous production of tandem, amorphous, photovoltaic solar cells on substrate material, whereby, at least six amorphous layers are continuously and sequentially deposited on the substrate material under steady conditions. The substrate material is driven from a supply core, through at least two triads of deposition chambers, to a take-up core. Each amorphous layer of each p-i-n-type cell is produced in one chamber of the triad of deposition chambers. In the first chamber of each triad of chambers, dopant gases are introduced to deposit a first conductive layer. In the second chamber of each triad of chambers, reaction gases are introduced to deposit an intrinsic layer atop the first layer. And in the third chamber of each triad of chambers, dopant gases are introduced to deposit a second conductive layer, opposite in conductivity from the first conductive layer, atop the intrinsic layer.

Abstract: Apparatus for indexing and accurately registering a selected one of a plurality of deposition masks in operative relationship to a substrate comprising carriage means for supporting a plurality of deposition masks in an aligned spaced relationship relative to each other wherein each of the deposition masks has a selected number of prealigned registration members located thereon in a predetermined pattern and which are adapted to co-act with reference registration members loaded thereagainst, gantry means for supporting a substrate at a deposition station above the surface of the deposition masks having the prealigned registration members located thereon, reference registration members which are located on the substrate or around the periphery of the gantry means and which are directed towards and adapted to be loaded against the prealigned registration members to position the gantry means and the substrate relative to the selected one of said plurality of deposition masks, indexing means for transporting the

Abstract: Mold release agents and means for their application are provided. The release agents are used in coating molds for forming expandible plastics. They are especially applicable to polyurethane-based reaction injection molding (RIM) systems. The release agents, which have a controlled saponified fatty acid content (unsaturated as oleate and/or linoleate and saturated as C.sub.8 to C.sub.12 alkanoate) make for significant advantage with respect to ease of release, prevention of residual build-up, mold and part cleanability, health and safety, cost, etc.

Abstract: An improved spacer means for separating and inhibiting the shorting together of conductive plates in an RF plasma reactor used in Plasma Enhanced Chemical Vapor Deposition (PECVD) processing of semiconductor devices. The improved spacer means inhibits the accumulation of conductive films on the surface of the separating means by substantially precluding the plasma field, and hence, inhibiting depositions in areas where recessed grooves are in the surface of the separating means. Accordingly, a direct electrical path on the spacer means between the multiple conductive plates of the RF plasma reactor is inhibited. As a result, the reactors can run for longer periods of time and deposit greater thicknesses of conductive films without the conductive plates shorting together causing shutdown of the process.

Abstract: An apparatus for depositing metal or alloy films by a thermal decomposition process on a substrate includes a furnace having a number of selectively heated zones. The temperature of each zone is controllable so as to provide compensation for changes in the concentration of reactant materials in the different regions of the furnace. Means are provided for the safe handling of highly pyrophoric organometallic reactants. The apparatus may be used for the deposition of aluminium/silicon alloy films on semiconductor wafers in the manufacture of integrated circuits.

Abstract: Susceptor formed with a base and with a pedestal made of materials respectively having low and high radio-frequency (r-f) absorptivities. Mercury is carried in a cavity in the base and a semiconductor substrate is carried in a cavity in the pedestal. When an r-f field is applied to the susceptor, the substrate is heated to a higher temperature than the mercury.

Abstract: A semiconductor device manufacturing unit in which plasma gas is maintained sealed in a quartz tube by a magnet disposed outside the quartz tube to make the density of plasma gas high and uniform thereby improving the quality of CVD films deposited with the gas and reducing the processing time for semiconductor wafers. A wafer holder is movably mounted in the quartz tube. A support bar is provided for moving the wafer holder with the support bar serving additionally as a ground electrode. An RF electrode and magnet are disposed outside the quartz tube. A heater may be disposed outside the RF electrode and magnet.

Abstract: A plasma arc discharge method for deposition of metallic and semiconductor layers on a substrate for the purpose of producing semiconductor grade materials such as silicon at a reduced cost. Magnetic fields are used so that silicon ions and electrons can be directed toward a target area where they are deposited. The ions and electrons are preferably injected as a compound in gaseous of liquid form but may also be injected in liquid elemental form or vaporized from a thermionic cathode. The magnetic fields include an accelerating magnetic field and a focusing magnetic field. The accelerating magnetic field is adjusted to support a desired high ion flux rate and the focusing magnet can control the plasma beam direction and divergence.The silicon provided in a compound form or in the form of metallurigical silicon is purified during the deposition process by a carrier substance which may be a part of the compound or separately injected.

Abstract: A method and a multiple chamber apparatus for the continuous production of tandem, amorphous, photovoltaic cells on substrate material, whereby, at least six amorphous semiconductor layers are continuously and sequentially deposited on the substrate material under steady state conditions. The substrate material is driven from a supply core, through at least two triads of deposition chambers, to a take-up core. Each amorphous layer of each p-i-n-type cell is produced in one chamber of the triad of deposition chambers. In the first chamber of each triad of chambers, a dopant gas mixture is introduced to deposit a first conductive semiconductor layer atop the substrate. In the second chamber of each triad of chambers, a gas mixture is introduced to deposit an intrinsic layer atop the first layer. And in the third chamber of each triad of chambers, a dopant gas mixture is introduced to deposit a second conductive layer, opposite in conductivity from the first conductive layer, atop the intrinsic layer.

Abstract: An external isolation module adapted to operatively interconnect at least one pair of a plurality of adjacent vacuum chambers through which a substrate travels and into which reaction materials are introduced. The external isolation module provides a passageway for the substrate between adjacent chambers while substantially preventing the diffusion of reaction materials from one of the chambers into the adjacent chamber. An accessible, environmentally-sealed, reaction material-isolating passageway is thereby formed.

Abstract: A process gas introduction and channeling system for use with apparatus adapted to produce photovoltaic devices by depositing semiconductor layers onto continuously moving substrate material. The deposition apparatus preferably includes at least one deposition chamber having (1) a region in which process gases are decomposed and (2) a manifold from which process gases are introduced to flow through the downstream decomposition region. In the preferred embodiment, as the process gases flow through the decomposition region, they are disassociated and recombined under the influence of an electromagnetic field. The species and combinations of process gases thus formed are deposited onto the substrate material.

Abstract: A vacuum coating vessel is provided comprising a casing having a vacuum coating compartment separated from a vapor source compartment by a partition having vapor ports. A slidable shutter plate is provided on the vapor source compartment side of the partition. The shutter plate, in an open position, aligns vapor ports therein with the ones in the partition, and, in a closed, closes the vapor ports with `O`-ring seals. A mechanism is provided for moving the shutter plate away from and then towards the partition at the beginning and end respectively of each stroke to avoid scraping the `O`-rings and to ensure that the `O`-rings are kept as clean as possible. The vapor ports of the shutter plate and the partition are chamfered away from the vapor source compartment so that the `O`-ring sealing surfaces around the vapor ports in the partition are masked when the shutter plate is in the open position.

Abstract: A layer of dielectric material, carrying printed or thick-film circuit components on opposite surfaces, is provided with one or more bores extending between aligned circuit points to be conductively interconnected. The layer is sandwiched between two masks having a perforation of larger diameter in line with each bore, such perforation communicating with a respective chamber in an adjoining member forming part of a pair of clamp jaws pressing the masks against the layer. A conductive liquid or paste in one chamber is pumped through each bore from one chamber into the other, via the adjoining perforations, by the respective application of pressure and suction to these chambers with the aid of membranes or pistons moving codirectionally in one or more strokes.