Abstract: A process for fabricating Ultra Large Scale Integrated (ULSI) circuits in Silicon On Insulator (SOI) technology in which the device structures, which can be bipolar, FET, or a combination, are formed in vertical silicon sidewalls having insulation under and in back thereof so as to create SKI device structures. The silicon sidewall device SOI structures, when fabricated, take the form of cells with each cell having a plurality of either bipolar devices, FET devices, or a combination of these devices, such as collectors, emitters, bases, sources, drains, and gates interconnected within the planes of the regions of the devices in the cells and can be interconnected within the planes of the regions of devices in adjacent cells. Further, the interconnections to adjacent cells can be made from the back of the silicon sidewalls.

Abstract: A dry etching method includes the steps of etching a transparent electrode film by reactive ion etching with a first etching gas, changing the first etching gas to a second etching gas, and etching the transparent electrode film by reactive ion etching with the second etching gas. A chlorine containing gas is employed as the second etching gas.

Abstract: A photo-electric chemical apparatus comprising an electrolyte, a first electrode having an n-type semiconductor member disposed to be in touch with the electrolyte and a second electrode having a carbon cluster member disposed to be in touch with the electrolyte. The first and second electrodes are short-circuited and irradiated with a light beam to thereby generate oxygen and hydrogen. The first electrode is a laminated member consisting of a light transmitting glass, a transparent conducting layer and an n-type semiconductor layer. The second electrode is a laminated member consisting of a light transmitting glass, a transparent conducting layer and a carbon cluster thin film.

Abstract: Process and equipment for manufacturing salts of metals, particularly nickel hypophosphite, are disclosed.

Abstract: The present invention concerns stepped mould inserts, a method of producing the same and high-precision stepped microstructure bodies moulded therewith. The present stepped mould inserts and method of producing the same are more simple than previous methods. The lithographically produced regions of a patterned resist layer, which are exposed by development on a flat plate, are filled with metal. The layer may be mechanically removed, down to a predetermined thickness. After the residues of the resist have been dissolved out, if necessary or desired, this operation is repeated from one to several times. The regions removed from the resist layer are filled with metal, covered and separated from the resist layer, thus providing a multistep metallic mould insert. High-precision microstructure bodies having a multistep structure are produced with the present stepped mould insert.

Abstract: An insulated-gate field-effect transistor 10 is formed on a semiconductor substrate 8. The source 12 and/or drain 20 junction region comprises a heavily doped region 14 (22), a non-overlapped lightly doped region 16 (24), and an overlapped lightly doped region 18 (26). The doping concentration and junction depth of the overlapped 18 and non-overlapped 16 lightly doped regions may be controlled and optimized independently. An insulating layer 50 is formed over a channel region 28 which separates the source 12 and drain 20, and also over the overlapped portions of the source 18 and drain 26. A gate 42 is formed over the insulating layer 50. Two exemplary methods of fabrication are disclosed in detail herein as well as other systems and methods.

Abstract: In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.

Abstract: Biochemically-powered self-exciting electric power source including, inside a container for containing an electrolyte, an anode which is coated with a biochemical compound, a first electrode, and a second electrode, which are electrically separated from one another and immersed in the electrolyte. There is also an electrical stimulator connected between the anode and the first electrode. A user load can be connected between the second electrode and the anode.

Abstract: A hydrometallurgical process for converting zinc sulfide in an ore containing zinc sulfide, said zinc sulfide being chemically converted at elevated temperatures to ZnSO.sub.4.xH.sub.2 O which crystallizes substantially in the monohydrate formas ZnSO.sub.4.H.sub.2 O in a conversion solution having a high concentration of H.sub.2 S.sub.4. The process comprises:i) contacting the zinc sulfide of the ore with the conversion solution which comprises a concentration of sulfuric acid selected from the range of about 45% by weight up to about 70% by weight of the conversion solution and at the elevated temperature in the range of 90.degree. C. to less than boiling point of the conversion solution for the selected concentration of sulfuric acid;ii) maintaining the conversion solution at the elevated temperature and at the range of concentration of the sulfuric acid to ensure continued formation of the crystals of ZnSO.sub.4.H.sub.

Abstract: The improved method comprises contacting a substrate 5 at least once by a liquid containing the elements that compose a pure metal or an alloy with which the small holes or recesses 3a in the substrate 5 are to be filled or covered, whereby the liquid wets the inner surfaces of said small holes or recesses 3a while, at the same time, said pure metal or said alloy is deposited on the surface of said substrate 5. The method is capable of filling small holes or covering small recesses in the surface of the substrate 5 with improved efficiency while, at the same time, it improves the heat resistance and materials stability of the part that contains the formed filling or covering layer.

Abstract: The present invention relates to a transistor in a semiconductor device and method of making thereof which can improve the driving speed, by forming the junction region thicker than the channel and LDD regions so as to reduce the resistance itself of the junction region.

Abstract: The use of a wire of a metal other than tantalum as a lead wire fixed to a chip formed by sintering tantalum powder is enabled. Prior to the formation of a dielectric film on a chip through anodic oxidation, an insulating material is applied to a surface of the lead wire fixed to the chip at a connection with the chip. With the application of the insulating material, a short circuit between the lead wire and a chemical conversion solution is prevented when the entire chip is drenched in the chemical conversion solution in anodic oxidation, so that a dielectric film of tantalum pentoxide is surely formed on the chip. As the lead wire, an arbitrary metal having conductivity may be used.

Abstract: An electroforming process and apparatus for forming an electroform with a roughened surface. The present invention roughens the surface of the mandrel using a sandblasting device in the center region of the mandrel allowing the two end regions to remain smooth. The intersection of the roughened center region and each of the two end regions form a step. This step on either side of the roughened center region facilitates sealing while the roughened center region enables toner distribution. The electroform created using the step roughened mandrel surface is separated from the mandrel without destroying the mandrel. The step roughened mandrel can then be reused to create another electroform with a roughened surface.

Abstract: A salt water electrolysis process for electrolyzing an aqueous alkali chloride solution capable of preventing the deterioration of a gas diffusion cathode is disclosed. A cation-exchange membrane having closely disposed to one surface thereof an insoluble metal anode and having closely adhered or mechanically attached to the opposite surface thereof a liquid permeable gas diffusion cathode is disposed in an electrolytic cell, and electrolysis is carried out while supplying salt water to the anode chamber and an oxygen-containing gas containing water as steam or fine water droplets to the cathode chamber, and an alkali hydroxide is obtained from the cathode chamber. The water-containing gas directly reaches the gas diffusion cathode and since the alkali hydroxide and the alkali carbonate formed at the surface of the cathode are dissolved in the water in the gas and removed from the electrolytic cell, deterioration of the gas diffusion cathode can be prevented.

Abstract: The invention describes the application of copper damascene connectors to a double level metal process. A dual damascene copper connector whose upper surface is coplanar with the upper surface of the insulating layer in which it is embedded is described. Out-diffusion of copper from the connector is prevented by at least two barrier layers. One or two barrier layers are located at the interface between the connector and the insulating layer while another barrier layer comprises conductive material and covers the upper surface of the connector. When a second damascene connector is formed above the first connector the conductive barrier layer facilitates good contact between the two connectors. It also acts as an etch stop layer during the formation of the second connector. A process for manufacturing this structure is also described. It involves over-filling a trench in the surface of the insulator with copper and then removing the excess by chem.-mech. polishing.

Abstract: A process for producing electrical energy in an internal reforming, high-temperature fuel cell. Steam reforming of a carbonaceous feed gas takes place in the presence of a steam-reforming catalyst in heat-conducting relationship with electrochemical reactions in the fuel cell. The steam reformed feed gas is electrochemically reacted in an anode compartment of the fuel cell. The process is improved by controlled addition of a gaseous, sulfur-containing compound to the carbonaceous feed gas in an amount sufficient to obtain a sulfur coverage on the steam reforming catalyst of between 0.1 to 0.9.

Abstract: The apparatus consists of one or more electrolytic cells containing electrodes made out of metal foils perforated with a very large number of microscopic holes, through which electrolyte is sprayed or pumped, creating a large contact area between the electrolyte and the conductive electrode material. The apparatus can be used for the production of bleaching and oxidizing liquids, both "in-line" and "off-line," for de-lignification and/or bleaching of cellulose fibers or other solids in suspension, or for oxidizing of organic compounds in liquids in connection with COD reduction or disinfection. The apparatus can also be used to create electrostatic effects on fines, colloids and chemicals in liquids, and thereby influence surface tensions, transfer of charges, electrokinetics and adsorption.

Abstract: An improved coated plastic mold for the polymerization of electrophoresis gels. The mold controls the effects of oxygen contamination upon gel polymerization resulting in a more uniform gel with improved properties.

Abstract: A semiconductor device suitable for active-matrix addressed liquid crystal display device equipped with pixel electrodes and comprising a thin film transistor and a capacitor formed on the same insulation substrate, provided that said capacitor is formed from an oxide insulation film provided on the lower electrode and a silicon nitride film. Highly reliable thin film transistors and capacitors can be obtained.

Abstract: Control of sulfate and perchlorate impurity levels is provided in a procedure for manufacturing crystalline sodium chlorate by electrolyzing an aqueous solution of sodium chloride and crystallizing sodium chlorate from the resulting aqueous solution of sodium chlorate and sodium chloride. The mother liquor from the crystallization, or a portion thereof, is treated simultaneously with calcium chloride to remove sulfate ions by precipitating calcium sulfate and with potassium chloride to remove perchlorate ions by precipitating potassium perchlorate.