Abstract: Provided are a susceptor for a plasma CVD equipment, characterized in that the surface of the susceptor has raised and depressed portions which are continuously formed, and a steep protrusion is completely removed in the raised portion, and a method of roughening a surface of a susceptor for a plasma CVD equipment, which comprises a step of mechanically flattening the surface of the susceptor, a step of shot-blasting the surface of the thus-flattened susceptor, and a step of polishing the shot-blasted surface of the susceptor chemically, electrochemically and/or mechanically, a steep protrusion being completely removed from the surface of the susceptor, and an Ra value of the susceptor surface being 1 .mu.m.ltoreq.Ra.ltoreq.8 .mu.m. Since the susceptor of the present invention reduces a rate of contact between a wafer substrate and the susceptor surface, adsorption due to charging can be prevented.

Abstract: An apparatus for producing a plasma suitable for semiconductor processing at pressures in the low millitorr range. The apparatus includes a vacuum chamber with a dielectric window, a generally planar coil disposed adjacent the window outside the chamber and coupled to an appropriate power source, and a plasma initiator disposed within the chamber. Once the plasma is initiated, the planar coil sustains the plasma by inductive power coupling. In one embodiment the plasma initiator is a secondary electrode disposed within the chamber and coupled to a second RF power source. In an alternative embodiment both the secondary electrode and a target pedestal are coupled to the secondary RF power source through a power splitter. In an alternative embodiment, the plasma initiator is used to ionize a portion of the process gas and provide a plasma that may then inductively couple with the planar coil.

Abstract: Methods are disclosed for making fiducial marks for charged-particle-beam (CPB) exposure apparatus, especially for performing high-accuracy measurements of aberrations of the CPB optical system in such apparatus. The fiducial marks are made by forming multiple features in a monocrystalline Si substrate. The features are longitudinally extended and are preferably in two groups wherein the features in one group are longitudinally extended in a direction that is perpendicular to the direction in which the features in the other group are longitudinally extended. Where the (110) plane of the monocrystalline Si is the surface of the substrate, the longitudinal direction of each feature is oriented in the <112> direction of the (110) plane.

Abstract: An apparatus and method for depositing thin films on the surface of a device such as a spherical shaped devices. The apparatus includes an enclosure containing a plurality of apertures and two chambers. The apertures connect to conduits for inputting and outputting the devices as well as injecting and releasing different gases and/or processing constituents. A first chamber is formed within the enclosure and includes a plasma torch. A second chamber is formed within the enclosure and includes a heating coil. Devices move through the input conduit and into the first chamber where they are heated by the plasma torch. Because of this heating, radicals, electrons, and ions near the surface of the devices are generated. The heated devices then move into the second chamber where they are further heated by energy from the conductor coil. At this time, the gases and/or processing constituents react with the heated device thereby growing a thin film on its outer surface.

Abstract: Slurry is provided to the surface of the polishing pad by pumping the slurry up through a central port, or by dripping the slurry down onto the surface of the polishing pad from a slurry feed tube. A slurry wiper, which may have one or more flexible members, sweeps the slurry evenly and thinly across the polishing pad. A control system coordinates the distribution of slurry to the polishing pad with the motion of the carrier head.

Abstract: A plasma stream generator with a closed-configuration arc for achieving a stream comprising a central area at a uniform or very low temperature. The generator comprises a higher or even much higher number of electrode pairs than is usual, whereby rows may be formed and, in particular, an elongate stream, i.e. a curtain, may be achieved. The orientation problems resulting from the closeness of the jets and the increased attraction/repulsion therebetween are solved by means of magnetic devices (coils) of which there are generally three for a pair of electrode chambers.

Abstract: A plasma processing chamber includes a substrate holder and a gas distribution plate having an inner surface facing the substrate holder, the inner surface being maintained below a threshold temperature to minimize process drift during processing of substrates. The inner surface is cooled by adding a heat transfer gas such as helium to process gas supplied through the gas distribution plate. The chamber can include a dielectric window between an antenna and the gas distribution plate. The control of the temperature of the inner surface facing the substrate minimizes process drift and degradation of the quality of the processed substrates during sequential processing of the substrates such as during oxide etching of semiconductor wafers.

Abstract: A continuous plasma CVD apparatus, characterized in that frequency of high-frequency bias is in the range of 50-900 KHz, a blocking condenser is provided between a thin film and a high-frequency source so that the product C.multidot.f of electrostatic capacity C of the blocking condenser and frequency f of the high-frequency source is 0.02 [F.multidot.Hz] or more, and the total of impedances of all the rollers provided in the route of from a substrate unwind roller to a rotating drum is 10 k.OMEGA. or more and the total of impedances of all the rollers provided in the route of from the rotating drum to a wind roller is 10 k.OMEGA. or more. According to this apparatus, it becomes possible to continuously form a film without causing damage and deterioration of the substrate.

Abstract: Method of providing a pattern of apertures and/or cavities in, for example, a glass duct plate of a plasma-addressed liquid crystal display, in which first a mechanical treatment is performed (for example, by means of powder blasting) and then a wet-chemical etching treatment is performed to render the walls of the ducts microscopically less rough so that the optical disturbance is reduced and the glass becomes clearer again.

Abstract: A substrate processing system that includes a deposition chamber having a reaction zone, first and second electrodes, a mixed frequency RF power supply including a low frequency RF power source and a high frequency RF power source. The high frequency RF power supply provides enough power to form a plasma from a process gas introduced into the reaction zone and the low frequency RF power supply is configured to supply an asymmetrical waveform to either said first or second electrodes to bias the plasma toward the substrate.

Abstract: A carrier for double-side polishing, which has a polishing pad dressing function as well as a polishing function, so that it can do removal of matter stuck to polishing pads and wear correction thereof concurrently with polishing and ensure stable work polishing accuracy. A resin-coated metal or resin ring is provided around the outer periphery of a carrier portion having work retainer holes and abrasive feed holes, and projections are formed on the upper and lower surfaces of the ring. The projections are cylindrical, triangular pyramidal, quadrangular pyramidal or conical, or they may be irregular projections formed by blasting.

Abstract: The present invention generally provides methods for employing a focused particle beam system in the removal of an excess portion from a workpiece having an opaque film patterned on a substrate and more particularly provides methods of gas-assisted etching using an etching gas including bromine.

Abstract: Machine for the deposition, under relative vacuum, of a material on parts (1) in a loose state, comprising a chamber (20, 20') in which there is placed at least one cathode (21, 21') that is negatively polarized with respect to the chamber, and conduits having holes and tubes (11, 12; 11', 12'; 11", 12") for keeping the chamber (20, 20') under a relative vacuum of at least one gaseous agent. The chamber (20, 20') is mounted rotationally about an axis inclined (D, D') with respect to the horizontal inside a housing (10, 10') that carries the relative vacuum, the chamber (20, 20') having an upper aperture (22, 22') for introducing the parts (1) in a loose state and a lower aperture (23, 23') for discharging the parts after the deposition of the material. Application to vacuum deposition techniques.

Abstract: A etcher (10) has an inner chamber (22) that is in communication with a collection chamber (17). A cover (33) is made from a substrate (11) and an outer housing (34). The cover (33) is attached to the etcher (10) so that the substrate (11) is suspended over the inner chamber (22). A recirculating system (29) is used to pass an etchant through a filter, into the inner chamber (22), across the substrate (11), into the collection chamber (17), and into a reservoir.

Abstract: A method of etching an organic reflective coating which is suitable for minimizing the loss of a photoresist film and for improving the anisotropic etch profile is provided, including the steps of forming an organic anti-reflective coating on an etch layer, coating and patterning a photoresist material on the organic anti-reflective coating, and etching the organic anti-reflective coating in an O.sub.2 /CO plasma atmosphere.

Abstract: A process for depositing a dielectric film having a reduced dielectric constant and desirable gap-fill characteristics, at an acceptable deposition rate is disclosed. A filmed deposited according to the present invention possesses acceptable stability, and avoids outgassing of the halogen dopant while resisting shrinkage.A carbon-based dielectric film is deposited on a substrate in a processing chamber by first flowing a process gas into the processing chamber. The process gas includes a gaseous source of carbon (such as methane (CH.sub.4)) and a gaseous source of a halogen (such as a source of fluorine (e.g., C.sub.4 F.sub.8)). A plasma is then formed from the process gas by applying a first and a second RF power component. Preferably, the second RF component has a frequency of between about 200 kHz and 2 MHz and a power level of between about 5 W and 75 W. The first and a second RF power components are applied for a period of time to deposit a halogen-doped carbon-based layer.

Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Abstract: A method for precision polishing non-planar, aspherical surfaces in substrates having variations in figure which are within an order of about ten wavelengths (10 .lambda.) is performed by coating the non-planar, aspherical surface with a thin, uniform layer of material, single-point-diamond turning the layer to achieve a layer surface with an excellent surface figure, and etching the layer surface down into the substrate to completely remove the layer thereby transferring the excellent surface figure to the substrate.

Abstract: The invention is a method of fabricating a device which includes the step of etching a layer of tantalum oxide or niobium oxide. A material comprising chlorine and a material comprising oxygen are applied to the layer and energy is added to the layer in the form of heat or ion bombardment.

Abstract: A method and apparatus for vacuum depositing a coating onto a substrate are provided. The method includes the steps of: introducing an evaporant into a magnetically defined deposition region of a vacuum process chamber, ionizing the evaporant to form a plasma; generating a "magnetic bottle" magnetic field configuration to define the deposition region and to confine the plasma to the deposition region, further increasing the percentage ionization of the plasma to form a highly ionized media; creating a static dc electric field that is generally perpendicular to the magnetic field in the deposition region and parallel to the plane of the substrate; and then moving the substrate through the highly ionized media with the plane of the substrate and its direction of motion generally parallel to the magnetic field lines. The method of the invention is particularly suited to deposition of any atomistic evaporant onto intermediate-sized substrates.