Abstract: The present invention is directed to a method for preparing a glass device comprising the steps of: —preparing a mixture comprising: —at least two glass components, —a solvent, —at least one binder system, —optionally at least one defoamer, —blending the mixture to form a blend mixture, —grinding the blend mixture to form a grinded mixture, —casting the grinded mixture to form a layer, and —drying the layer to form a dried layer of a glass device. The present invention is further directed to a glass device, a wavelength converter and a light emitting device comprising the glass device and/or the wavelength converter.

Abstract: A method for manufacturing an organic EL device according to an embodiment of the present invention includes: a step for preparing an element substrate having a substrate and a plurality of organic electroluminescent elements (3) which are supported by the substrate; and a step for forming a thin film encapsulation structure (10) covering the organic electroluminescent elements.

Abstract: Provided is a technique for improving the durability of a semiconductor device. A semiconductor device includes a semiconductor substrate, an electrode on the semiconductor substrate, a solder-joining metal Him on the electrode, an oxidation-inhibiting metal film on the solder-joining metal film, and a solder layer on the oxidation-inhibiting metal film. The solder-joining metal film includes a first portion that does not overlap the oxidation-inhibiting metal film in plan view when the solder-joining metal film and the oxidation-inhibiting metal film are viewed from the oxidation-inhibiting metal film.

Abstract: A printed circuit board includes an insulating material with a bump pad buried in one surface, an adhesive layer stacked on the one surface of the insulating material, an insulating layer stacked on the adhesive layer, and a cavity passing through both of the adhesive layer and the insulating layer to expose the bump pad, wherein the cavity has a cross-sectional area decreasing in a direction toward the insulating material.

Abstract: A component module includes a component holder having a curved upper side, and a radiation-emitting component arranged in a curved shape on the upper side, wherein the component holder includes a heat-distributing region on the upper side, a neutral fiber running inside the component, an adhesive is planar and arranged between the radiation-emitting component and the upper side, and the adhesive fixes the radiation-emitting component on the upper side.

Abstract: An insulating film (2) is provided on a base material (1). The insulating film (2) is a compressive film in which a stress is applied in a direction of peeling away from the base material at a central portion. A recess (3) is formed in the central portion of the insulating film (2) so that a thickness is partially reduced.

Abstract: Disclosed are a fluororesin interfacial agent for LED packaging, and a method for preparing and using the same. The fluororesin interfacial agent for LED packaging comprises a graphene oxide fluororesin sealant and KH550 silane coupling agent solution. Graphene oxide powder in the graphene oxide fluororesin sealant chemically reacts with the KH550 silane coupling agent, and molecular crosslinking is formed, which tightly fixes a bonding interface and a fluororesin matrix like countless molecular anchors, and which greatly improves the bonding capability of fluororesin sealant and ensures the reliability of LED packaging.

Abstract: A 3D semiconductor device, the device including: a first die including first transistors and first interconnect; and a second die including second transistors and second interconnect, where the first die is overlaid by the second die, where the first die has a first die area and the second die has a second die area, where the first die area is at least 10% larger than the second die area, where the second die is pretested, where the second die includes an array of memory cells, where the first die includes control logic to control reads and writes to the array of memory cells, where the second die is bonded to the first die, and where the bonded includes hybrid bonding.

Abstract: An integrated circuit includes pads formed on a back end of the line surface, and decoupling capacitor stacks monolithically formed about the pads. Solder balls are formed on the pads and connect to metal layers within the decoupling capacitor stacks to reduce noise and voltage spikes between the solder balls.

Abstract: A high electron mobility transistor (HEMT) includes a substrate comprising a first surface and a second surface on opposing sides of the substrate, a channel layer on the first surface of the substrate opposite the substrate, a barrier layer on the channel layer, a source contact comprising a first ohmic contact on an upper surface of the barrier layer, and a via extending from the second surface of the substrate to the first ohmic contact.

Abstract: A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer, a second semiconductor layer; a first metal layer arranged on at least a portion of the first semiconductor layer and in contact with the first semiconductor layer; and an electrode layer arranged over the light emitting structure, and having a first electrode layer and a second electrode layer. The first electrode layer is electrically coupled to the first and second semiconductor layers; the second electrode layer is configured for bonding with a package substrate, and includes a first and second bonding regions; the first bonding region is electrically coupled to the first semiconductor layer; the second bonding region is electrically coupled to the second semiconductor layer; and the first metal layer is not overlapped with the first bonding region of the second bonding region in a vertical direction.

Abstract: Embodiments of the present disclosure provide an OLED array substrate, a method for fabricating an OLED array substrate, an OLED pixel circuit, an OLED array substrate including the OLED pixel circuit, and a display device including the OLED array substrate. The OLED array substrate includes a substrate, an OLED arranged on the substrate, and a photosensor positioned between the OLED and the substrate. The photosensor includes a first electrode, a photosensitive layer, and a second electrode sequentially arranged from bottom to top. The OLED includes an anode, an organic light-emitting layer, and a cathode sequentially arranged from bottom to top. The anode includes a first portion and a second portion.

Abstract: A semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; and a microelectromechanical systems (MEMS) element, including a sensitive area, disposed at the first surface of the substrate. The semiconductor device further includes at least one electrical interconnect structure electrically connected to the first surface of the substrate, and a flexible carrier electrically connected to the at least one electrical interconnect structure, where the flexible carrier wraps around the semiconductor chip and extends over the second surface of the substrate such that a folded cavity is formed around the semiconductor chip.

Abstract: A display device includes a first insulation layer on a first gate electrode, an active pattern on the first insulation layer and including an NMOS area and a PMOS area, the PMOS area overlapping the first gate electrode, a second insulation layer on the active pattern. The active pattern includes an NMOS area and a PMOS area, with the PMOS area overlapping the first gate electrode. In addition, a second gate electrode is on the second insulation layer and overlaps the NMOS area. An active-protecting pattern is in the same layer as the second gate electrode and passes through the second insulation layer to contact the PMOS area. A third insulation layer is on the active-protecting pattern and the second gate electrode. A data metal electrode passes through the third insulation layer and contacts the active-protecting pattern.

Abstract: In various embodiments, lighting systems include a carrier having a plurality of conductive elements disposed thereon and a light-emitting array. The light-emitting array is disposed over the carrier and includes a plurality of light-emitting diodes (LEDs), each of which has at least two electrical contacts electrically connected to conductive elements.

Abstract: The present invention is directed to a wavelength converter comprising: —a phosphor layer and—a filter layer, wherein the filter layer is directly attached to the phosphor layer and wherein the wavelength converter has an overall thickness of between 20 ?m to 80 ?m. Furthermore, the present invention is directed to a light emitting device assembly and methods for preparing a wavelength converter and methods for preparing a light emitting device assembly.

Abstract: An integrated circuit system, structure and/or component is provided that includes an integrated electrical power source in a form of a unique, environmentally-friendly energy harvesting element or component. The energy harvesting component provides a mechanism for generating autonomous renewable energy, or a renewable energy supplement, in the integrated circuit system, structure and/or component. The energy harvesting element includes a first conductor layer, a low work function layer, a dielectric layer, and a second conductor layer that are particularly configured to promote electron migration from the low work function layer, through the dielectric layer, to the facing surface of the second conductor layer in a manner that develops an electric potential between the first conductor layer and the second conductor layer. An energy harvesting component includes a plurality of energy harvesting elements electrically connected to one another to increase a power output of the electric harvesting component.

Abstract: A display device includes a substrate, a transistor, a pad portion, a passivation layer, and a pixel definition layer. The substrate includes a display area and a peripheral area disposed at an edge of the display area. The transistor is disposed on the display area. The pad portion is disposed on the peripheral area. The passivation layer is disposed on the transistor. The pixel definition layer is disposed on the passivation layer. A portion of the passivation layer extends to the peripheral area. An upper surface of the portion of the passivation layer disposed on the display area is substantially flat. An upper surface of the portion of passivation layer disposed at the peripheral area has an uneven structure. The uneven structure includes a recess portion and a convex portion. The pixel definition layer covers the portion of the passivation layer disposed on the peripheral area.

Abstract: A photo-detecting apparatus includes an absorption layer configured to absorb photons and to generate photo-carriers from the absorbed photons, wherein the absorption layer includes germanium. A carrier guiding unit is electrically coupled to the absorption layer, wherein the carrier guiding unit includes a first switch including a first gate terminal.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a control device arranged within a substrate and having a terminal. A first memory device is coupled between the terminal of the control device and a first bit-line. A second memory device is coupled between the terminal of the control device and a second bit-line.