Abstract: The detachment of a semiconductor chip (1) from a foil (4) and picking the semiconductor chip (1) from the foil (4) takes place with the support of a chip ejector (6), that has a ramp (16), the surface (17) of which is formed concave and ends at a stripping edge (18) projecting from the surface (9) of the chip ejector (6), and a support area (13) with grooves (12) arranged next to the stripping edge (18). Vacuum can be applied to the grooves (12). The detachment and picking of the semiconductor chip (1) from the foil (4) takes place in that the wafer table (5) is shifted relative to the chip ejector (6) in order to pull the foil (4) over the stripping edge (18) protruding from the surface (9) of the chip ejector (6), whereby the semiconductor chip (1) temporarily detaches itself at least partially from the foil (4) and lands on the foil (4) above the support area (13), and in that the chip gripper (7) picks the semiconductor chip (1) presented on the support area (13).

Abstract: A microelectronic topography includes a dielectric layer (DL) with a surface higher than an adjacent bulk metal feature (BMF) and further includes a barrier layer (BL) upon the BMF and extending higher than the DL. Another microelectronic topography includes a BL with a metal-oxide layer having a metal element concentration which is disproportionate relative to concentrations of the element within metal alloy layers on either side of the metal-oxide layer. A method includes forming a BL upon a BMF such that portions of a first DL adjacent to the BMF are exposed, selectively depositing a second DL upon the BL, cleaning the topography thereafter, and blanket depositing a third DL upon the cleaned topography. Another method includes polishing a microelectronic topography such that a metallization layer is coplanar with a DL and further includes spraying a deionized water based fluid upon the polished topography to remove debris from the DL.

Abstract: Disclosed are a metal line of a semiconductor device and a method of manufacturing the same. In one embodiment, the metal line includes a first interlayer dielectric layer pattern formed on a lower interconnection structure and having a via hole that exposes a lower interconnection of the lower interconnection structure, a first barrier pattern selectively covering a sidewall of the via hole and the lower interconnection, a second interlayer dielectric layer pattern on the first interlayer dielectric layer pattern and having a trench that exposes the via hole, a second barrier pattern covering an inner wall of the trench and the first barrier pattern, a seed pattern formed on the second barrier pattern, and a copper line formed on the seed pattern.

Abstract: A contact device for use with a power semiconductor component in a power semiconductor module or a disc-type thyristor, the module or thyristor having a molded body with a first recess disposed above the component. The contact device makes electrical contact with the auxiliary connection of the component, and is disposed within a second recess in the module or thyristor. The contact device includes a spring having a pin-like extension at a first end thereof that faces the component and a metal molded body that is arranged at the opposite end thereof and has a first connecting device formed as a flat section of the metal molded body. The flat section is arranged generally parallel to the component, and has a second connecting device for connection to a connecting cable. The connecting device may also have a multipart insulating housing for holding the contact spring and the metal molded body.

Abstract: A stacked semiconductor package includes a substrate having first and second contact pads. A first stacked package group is disposed on the substrate, and the first stacked package group includes first semiconductor chips stacked in a stair form to expose first edge bonding pads. First conductive wires are used to electrically couple the first edge bonding pads and the first contact pads. An adhesive member is disposed on the uppermost first semiconductor chip, and a second stacked package group is disposed on the adhesive member. The second stacked package group includes second semiconductor chips that are stacked in a stair form to expose second edge bonding pads. When the second stacked package group is disposed on the adhesive member, the bottommost second semiconductor chips is aligned with the uppermost first semiconductor chip. Second conductive wires are used to electrically couple the second edge bonding pads and the second contact pads.

Abstract: Provided, is a reliable semiconductor device with a layered interconnect structure that may develop no trouble of voids and interconnect breakdowns, in which the layered interconnect structure comprises a conductor film and a neighboring film as so layered on a semiconductor substrate that the neighboring film is contacted with the conductor film.

Abstract: In a pad forming region electrically connecting an element forming region to the outside, in which a low dielectric constant insulating film is formed in association with in the element forming region, a Cu film serving as a via formed in the low dielectric constant insulating film in the pad forming region is disposed in higher density than that of a Cu film serving as a via in the element forming region. Hereby, when an internal stress occurs, the stress is prevented from disproportionately concentrating on the via, and deterioration of a function of a wiring caused thereby can be avoided.

Abstract: A flip chip lead frame package includes a die and a lead frame having a die paddle and leads, and has interconnection between the active site of the die and the die paddle. Also, methods for making the package are disclosed.

Abstract: The disclosed subject matter includes a semiconductor optical device with a stable optical characteristic, an excellent radiant efficiency, and a high mounting reliability. A casing can be configured with a concaved-shaped cavity that includes an opening and a bottom portion. Each of one end portions of first/second lead frame electrodes 3a, 3b can be exposed on the bottom portion. The first one end portion can include an optical chip mounted thereon, and the second one end portion can be connected to another electrode of the optical chip via a bonding wire. The first lead frame electrode extends from an outside surface substantially perpendicular to the bottom portion and is bent in a direction towards the opening. The second lead frame electrode extends from an outside surface of the casing that is opposite to the outside surface from which the first electrode extends. Various physical configurations of the electrodes are disclosed.

Abstract: Mark and method for integrated circuit fabrication with polarized light lithography. A preferred embodiment comprises a first plurality of elements comprised of a first component type, wherein the first component type has a first polarization, and a second plurality of elements comprised of a second component type, wherein the second component type has a second polarization, wherein the first polarization and the second polarization are orthogonal, wherein adjacent elements are of different component types. The alignment marks can be used in an intensity based or a diffraction based alignment process.

Abstract: A semiconductor package on which a semiconductor device can be stacked and fabrication method thereof are provided. The fabrication method includes the steps of mounting and electrically connecting at least one semiconductor chip on the substrate, mounting an electrical connecting structure consisting of an upper layer circuit board and a lower layer circuit board on the substrate and electrically connecting the electrical connecting structure to the substrate, where the semiconductor chip is received in a receiving space formed in the electrical connecting structure; forming an encapsulant on the substrate encapsulating the semiconductor chip and the electrical connecting structure, and after the encapsulant is formed, exposing top surface of the upper layer circuit board with a plurality of solder pads from the encapsulant to allow at least one semiconductor device to electrically connect the upper layer circuit board so as to form a stack structure.

Abstract: An integrated circuit packaging system comprising: fabricating a system-in-package substrate; mounting a first integrated circuit die on the system-in-package substrate; mounting a second integrated circuit die on the system-in-package substrate; and coupling a passive component over and between the first integrated circuit die and the second integrated circuit die.

Abstract: A film-on-wire spacer covers an entire upper surface of a lower electronic component. Accordingly, an upper electronic component is supported above bond pads and lower bond wires of the lower electronic component. This decreases the stress on the upper electronic component, e.g., during wirebonding, and thus decreases the chance of cracking the upper electronic component. Further, the lower bond wires are enclosed in and protected by the film-on-wire spacer. Further, the film-on-wire spacer is thin resulting in a minimum height of the stacked electronic component package.

Abstract: A method of forming a semiconductor device. A first wiring level is formed on a top surface of a substrate. The first wiring level includes alternating layers of a first dielectric material and a second dielectric material. The layers of the first dielectric material includes at least two layers of the first dielectric material. The layers of the second dielectric material includes at least two layers of the second dielectric material. The first dielectric material includes an organic dielectric material. The second dielectric material includes an inorganic dielectric material. The substrate includes one or more dielectric materials. A first layer of the layers of the first dielectric material includes the organic dielectric material being in direct mechanical contact with the substrate. The layers of the first dielectric material and the layers of the second dielectric material are a same number of layers.

Abstract: An electronic device includes a first silicon-based circuit carrying substrate and a die carried by the first silicon-based circuit carrying substrate. The silicon-based circuit carrying substrate is configured to electrically connect the die to other die. The device may include a second silicon-based circuit carrying substrate. The second silicon circuit carrying substrate may be closely coupled to the first silicon-based circuit carrying substrate. The device may also include a second die carried by the second silicon-based circuit carrying substrate.

Abstract: A connector includes a fitting hole into which a signal line is fitted, a tapered portion formed to lead a tip portion of the signal line to the fitting hole, and a bonded portion for bonding the connector to a control substrate. The tapered portion has a tapered shape on a side where the signal line is inserted. The tapered shape is tilted from a peripheral portion of the tapered portion to the fitting hole in a direction along which the signal line is inserted, with the fitting hole set as a center.

Abstract: An integrated circuit package system is provided forming a ring above a paddle and an external interconnect, mounting an integrated circuit die on the paddle, connecting the integrated circuit die and the external interconnect, the external interconnect and the ring, and the ring and the integrated circuit die, and encapsulating the integrated circuit die, the ring, and a portion of the external interconnect and the paddle.

Abstract: A method for generating a pattern includes reading out an interconnect layout and a hole layout, the interconnect layout prescribing interconnect patterns, the hole layout prescribing hole patterns configured to connect to the interconnect patterns; extracting one of the hole patterns to be connected within the same interconnect layer level to one of the interconnect patterns in a pattern processing area; extracting a first processing area including the extracted hole pattern; calculating a first pattern density of the interconnect patterns included in the first processing area; and generating first additional patterns in the first processing area based on the first pattern density.

Abstract: A flip-chip component includes a chip with pads located on the chip and a chip frame, wherein the chip frame is arranged around the chip and is attached to the chip so that the active surface of the chip is substantially planar with a surface of the chip frame. A redistribution layer is attached to the chip and chip frame, and interconnections mechanically connect the redistribution layer and a board. Aspects of the invention improve the reliability of the flip-chip package by reducing shear stresses in the interconnections between the package and a board during changing temperatures. This is achieved by carefully selecting the material of the chip frame and designing the placement of the interconnections so that thermal expansion of the package matches that of the board during changing temperatures.

Abstract: Semiconductor device assemblies include elements such as electronic components and substrates secured together by a fastener that includes an elongated portion extending continuously through an aperture in two or more such elements. Computer systems include such semiconductor device assemblies. Fasteners for securing together such elements include an elongated portion, a first end piece, and a second end piece. Methods of securing together a plurality of semiconductor devices include inserting an elongated portion of a fastener through an aperture in a first semiconductor device and an aperture in at least one additional semiconductor device. Circuit boards include a plurality of apertures disposed in an array corresponding to an array of apertures in a semiconductor device assembly. Each aperture is sized and configured to receive a fastener for maintaining an assembled relationship between the semiconductor device assembly and the circuit board.