Abstract: A method for forming a stud bumped semiconductor die is disclosed. The method includes forming a ball at the tip of a coated wire passing through a hole in a capillary, where the coated wire has a core and an oxidation-resistant coating. The formed ball is pressed to the conductive region on the semiconductor die. The coated wire is cut, thereby leaving a conductive stud bump on the conductive region, where the conductive stud bump includes an inner conductive portion and an outer oxidation-resistant layer.

Abstract: A housing is specified for an electronic component having at least two connecting parts (4a, 4b), which are partially in contact with the housing. The conductivity of at least subareas of the housing are set in a defined manner and current paths through the housing are formed between the connecting parts. The housing thus has a defined resistance (2), which is connected in parallel with an electronic component (1), and provides ESD protection for the component (1).

Abstract: An LED housing, in which a heat conducting part has a chip mounting area, a heat connecting area opposed to the chip mounting area and a neck between them. Fixing parts have first ends engaged with the neck. An electrical connecting part has a wire connecting area placed adjacent to the chip mounting area and an external power connecting area connected to the wire connecting area. A housing body of molding material integrally holds the heat conducting part, the fixing parts and the electrical connecting part while isolating the electrical connecting part from the heat conducting part. The LED housing fixes the neck of the heat conducting part at both sides, thereby stably coupling the heat conducting part to the housing body. The fixing parts can spread heat from the heat conducting part to lateral regions of the LED housing, thereby more efficiently spreading heat.

Abstract: The encapsulation lid comprises at least two glass layers of different compositions, a first layer called the bottom layer, which is continuous, and at least a second layer, which is discontinuous and designed so as to define cavities or anfractuosities in this lid. Preferably, the glass layers other than the first layer are preferably formed from low-melting-point frits, thereby allowing such lids to be manufactured economically, without recourse to glass machining.

Abstract: In a ceramic circuit board 1 prepared by integrally joining a circuit layer 4 composed of a clad member including a circuit plate 2 made of an Al plate and an Al—Si brazing material layer 3 to a ceramic substrate 6, a surface of the clad member adjacent to the Al—Si brazing material layer 3 is joined to the ceramic substrate 6 with an Al alloy film 5 therebetween, the Al alloy film 5 having a thickness of less than 1 ?m and being provided on the surface of the ceramic substrate 6. According to this structure, a ceramic circuit board in which the generation of voids in the joint interface can be effectively suppressed, the joint strength of the metal member serving as the circuit layer can be increased, and the heat resistance cycle characteristics can be drastically improved, and a method for producing the same can be provided.

Abstract: Apparatus including a chip substrate having a first chip surface facing away from a second chip surface; an array of microelectronic elements on the first chip surface; and an array of conductors each in communication with one of the microelectronic elements, the conductors passing through the chip substrate and fully spanning a distance between the first and second chip surfaces.

Abstract: A passive matching network is connected to an input/output line for an automatic test equipment drive channel to compensate for capacitances associated with a receiver circuit connected to the line, and also an optional current-mode driver circuit. The matching circuit preferably comprises a T-coil circuit that can include a bridging capacitor; separate T-coil circuits can be provided to separately compensate for receiver circuit and current-mode driver circuit capacitances. The driver and receiver circuits can be implemented on a common layer of an integrated circuit, with the T-coil windings implemented in a separate layer of the same integrated circuit that is spaced from the common layer by at least one dielectric layer.

Abstract: In one aspect, the present invention provides interposers that can mechanically, electrically, and thermally interconnect first and second microelectronic components. An interposer in accordance with the present invention includes a substrate, preferably flexible, having first and second oppositely facing surfaces. Such interposers also include an array of links traversing from the first surface of the substrate to the second surface of the substrate. In accordance with the present invention, each link preferably comprises a buried portion positioned between the first and second surfaces of the substrate. In other aspects of the present invention, microelectronic assemblies having first and second microelectronic components interconnected by an interposer and methods of interconnecting such components are provided.

Abstract: Techniques are provided for reducing the power supply voltage drop introduced by routing conductive traces on an integrated circuit. Techniques for reducing variations in the power supply voltages received in different regions of an integrated circuit are also provided. Power supply voltages are routed within an integrated circuit across conductive traces. The conductive traces are coupled to solder bumps that receive power supply voltages from an external source. Alternate ones of the traces receive a high power supply voltage VDD and a low power supply voltage VSS. The conductive traces reduce the voltage drop in the power supply voltages by providing shorter paths to route the power supply voltages to circuit elements on the integrated circuit.

Abstract: Output pads on an integrated circuit (IC) chip are arranged along a first longer side and are arranged along a second longer side with input pads. The output pads are connected to respective output patterns formed on top and bottom surfaces of a base film. All the output patterns may pass over the first longer side. Alternatively, the output patterns connected to the output pads at the second longer side may pass over a shorter side. These pattern structures establish an effective pad arrangement without increasing the size of a TAB package, yet allowing reduced the chip size.

Abstract: A microelectronic package includes a microelectronic element having faces, contacts and an outer perimeter, and a flexible substrate overlying and spaced from a first face of the microelectronic element, an outer region of the flexible substrate extending beyond the outer perimeter of the microelectronic element. The package includes a plurality of etched conductive posts exposed at a surface of the flexible substrate and being electrically interconnected with the microelectronic element, wherein at least one of the conductive posts is disposed in the outer region of the flexible substrate, and a compliant layer disposed between the first face of the microelectronic element and the flexible substrate, wherein the compliant layer overlies the at least one of the conductive posts that is disposed in the outer region of the flexible substrate.

Abstract: One embodiment of the present invention provides an apparatus that reduces voltage noise for an integrated circuit (IC) device. This apparatus includes a package which is configured to be sandwiched between the IC device and a circuit board. This package has a bottom surface, which is configured to receive electrical connections for power, ground and other signals from the circuit board, and a top surface, which is configured to provide electrical connections for power, ground and the other signals to the IC device. A plurality of bypass capacitors are integrated into the package and are coupled between the power and ground connections for the IC device, so that the plurality of bypass capacitors reduce voltage noise between the power and ground connections for the IC device.

Abstract: A microstructure including in a first layer insulated from a substrate by an insulator layer at least one sensitive element connected to at least one contact pad by an electrical connection and protected by a package cap. The sensitive element, the electrical connection, and the contact pad form an assembly delimited in the first layer by at least one trench, the assembly being covered by the package cap. The package cap includes at least one opening above the contact pad and is integral with the contact pad on the edges of the opening and with a zone located beyond the trench in relation to the assembly. Such a microstructure can find application in particular in microelectromechanical structures.

Abstract: A stacked integrated circuit package system is provided connecting an interconnect between a first integrated circuit device and a substrate, the first integrated circuit device on the substrate, applying a protective dot on the first integrated circuit device, mounting a second integrated circuit device, having an adhesive, on the protective dot, with the adhesive on the first integrated circuit device, connecting the second integrated circuit device and the substrate, and encapsulating the first integrated circuit device, the second integrated circuit device, and the interconnect.

Abstract: Structure and method are provided for plastic encapsulated semiconductor devices having reduced package cross-talk and loss. Semiconductor die are first coated with a buffer region having a lower dielectric constant ? and/or lower loss tangent ? than the plastic encapsulation. The encapsulation surrounds the buffer region providing a solid structure. The lower ? buffer region reduces the stray capacitance and therefore the cross-talk between electrodes on or coupled to the die. The lower ? buffer region reduces the parasitic loss in the encapsulation. Low ? and/or ? buffer regions can be achieved using low density organic and/or inorganic materials. Another way is to disperse hollow microspheres or other fillers in the buffer region. An optional sealing layer formed between the buffer region and the encapsulation can mitigate any buffer layer porosity. The buffer region desirably has ? less than about 3.0 and/or ? less than about 0.005.

Abstract: An optoelectronic component having a basic housing or frame (12) and at least one semiconductor chip (20), specifically a radiation-emitting or -receiving semiconductor chip, in a cavity (18) of the basic housing. In order to increase the efficiency of the optoelectronic component (10), reflectors are provided in the cavity in the region around the semiconductor chip. These reflectors are formed by virtue of the fact that a filling compound (28) filled at least partly into the cavity (18) is provided, the material and the quantity of the filling compound (28) being chosen in such a way that the filling compound, on account of the adhesion force between the filling compound and the basic housing, assumes a form which widens essentially conically from bottom to top in the cavity, and the conical inner areas (30) of the filling compound serve as reflector.

Abstract: A method and apparatus for making reliable miniature semiconductor packages having a reduced height and footprint is provided. The package includes a semiconductor chip having an active surface and a non-active surface and one or more contacts positioned adjacent the semiconductor chip. Electrical connections are formed between the contacts and the semiconductor chip. An adhesive tape provided adjacent the non-active surface of the semiconductor chip and the one or more contacts positioned adjacent the semiconductor chip. An adhesive material provided between the non-active surface of the chip and the adhesive tape.

Abstract: An integrated circuit comprises a plurality of integrated circuit die arranged in a stack, with a given die other than a top die of the stack carrying current for itself and at least one additional die of the stack via substrate conduction. In one arrangement, each of the die other than a bottom die of the stack carries its power supply current by substrate conduction via a bus or other power supply conductor of an underlying die.

Abstract: Provided is a power supply wiring structure which comprises a first and a second power supply wirings, which are disposed on different planes to cross each other two-dimensionally. The first and second power supply wirings are interlayer-connected by a first via at a crossing area where those power supply wirings cross each other. An extension wiring which is formed by partially extending from the crossing area along a wiring extending direction of other power supply wiring is provided at least to either the first power supply wiring or the second power supply wiring. The extension wiring and either the first power supply wiring or the second power supply wiring, which are disposed on a different plane from the extension wiring to face the extension wiring, are interlayer-connected by a second via. Thereby, generation of electro migration can be suppressed.

Abstract: The invention is directed to improvement of reliability of a semiconductor device having penetrating electrodes by preventing a protection film and an insulation film peeling. A peeling prevention layer for preventing an insulation film and a protection layer peeling is formed in corner portions of the semiconductor device. The peeling prevention layer can increase its peeling prevention effect more when formed in a vacant space of the semiconductor device other than the corner portions, for example, between ball-shaped conductive terminals. In a cross section of the semiconductor device, the peeling prevention layer is formed on the insulation film on the back surface of the semiconductor substrate, and the protection layer formed of a solder resist or the like is formed covering the insulation film and the peeling prevention layer. The peeling prevention layer has a lamination structure of a barrier seed layer and a copper layer formed thereon when formed by an electrolytic plating method.