Patents Examined by Daborah Chacko-Davis
  • Patent number: 12007685
    Abstract: A method for forming a structure of a pellicle-mask structure is provided. The method includes bonding a pellicle frame to a mask through a pellicle frame adhesive. The method also includes forming a vent structure in the pellicle frame. The method further includes bonding a pellicle membrane to the pellicle frame through a pellicle membrane adhesive. A first size of the pellicle membrane adhesive is greater than a second size of the pellicle frame adhesive.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: June 11, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Yun-Yue Lin
  • Patent number: 12001143
    Abstract: A lithography system includes an extreme ultraviolet (EUV) light source, a reticle stage, a reflection layer, and a plurality of light permeable protrusions. The EUV light source is configured for generating an EUV light beam. The reticle stage is configured for holding a reticle with a front surface of the reticle facing in a downward direction. The reflection layer is below the reticle stage. The light permeable protrusions are formed on the reflection layer. Each of the light permeable protrusions includes a bouncing surface facing in a direction that forms an acute angle with the downward direction. A first portion of the EUV light beam from the EUV light source passes through the bouncing surface of each of the light permeable protrusions to the reflection layer and is reflected to the reticle by the reflection layer.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: June 4, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventor: Hung-Jung Hsu
  • Patent number: 11988960
    Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.
    Type: Grant
    Filed: September 6, 2022
    Date of Patent: May 21, 2024
    Assignee: Inpria Corporation
    Inventors: Stephen T. Meyers, Douglas A. Keszler, Kai Jiang, Jeremy T. Anderson, Andrew Grenville
  • Patent number: 11988958
    Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: May 21, 2024
    Assignee: Inpria Corporation
    Inventors: Stephen T. Meyers, Douglas A. Keszler, Kai Jiang, Jeremy T. Anderson, Andrew Grenville
  • Patent number: 11988959
    Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.
    Type: Grant
    Filed: March 28, 2022
    Date of Patent: May 21, 2024
    Assignee: Inpria Corporation
    Inventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Michael K Kocsis, Alan J. Telecky, Brian J. Cardineau
  • Patent number: 11982936
    Abstract: A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsin-Chang Lee, Ping-Hsun Lin, Yen-Cheng Ho, Chih-Cheng Lin, Chia-Jen Chen
  • Patent number: 11977330
    Abstract: A resist composition which generates an acid by exposure and whose solubility in a developing solution changes by the action of an acid. The resist composition contains a high-molecular-weight compound having a constitutional unit represented by General Formula (a0-1), and a high-molecular-weight compound having a constitutional unit represented by General Formula (f01-1) and a constitutional unit including an acid-dissociable group represented by General Formula (f02-r-1).
    Type: Grant
    Filed: December 2, 2020
    Date of Patent: May 7, 2024
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Takaaki Kaiho, Yasuo Someya, Minoru Adegawa
  • Patent number: 11972948
    Abstract: New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.
    Type: Grant
    Filed: June 12, 2019
    Date of Patent: April 30, 2024
    Assignee: Brewer Science, Inc.
    Inventors: Andrea M. Chacko, Vandana Krishnamurthy, Yichen Liang, Hao Lee, Stephen Grannemann, Douglas J. Guerrero
  • Patent number: 11971657
    Abstract: A photoresist developer includes a solvent having Hansen solubility parameters of 15<?d<25, 10<?p<25, and 6<?p<30; an acid having an acid dissociation constant, pKa, of ?15<pKa<4, or a base having a pKa of 40>pKa>9.5; and a chelate.
    Type: Grant
    Filed: April 11, 2022
    Date of Patent: April 30, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: An-Ren Zi, Chin-Hsiang Lin, Ching-Yu Chang, Yahru Cheng
  • Patent number: 11966159
    Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.
    Type: Grant
    Filed: September 6, 2022
    Date of Patent: April 23, 2024
    Assignee: Inpria Corporation
    Inventors: Stephen T. Meyers, Douglas A. Keszler, Kai Jiang, Jeremy T. Anderson, Andrew Grenville
  • Patent number: 11966158
    Abstract: The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: April 23, 2024
    Assignee: Inpria Corporation
    Inventors: Benjamin L. Clark, Dominick Smiddy, Thomas J. Lamkin, Mark Geniza, Joseph B. Edson, Craig M. Gates
  • Patent number: 11960205
    Abstract: Method for manufacturing a horology component, including manufacturing (E1) a first structure (10) from a first photosensitive resin (31) having at least one layer of photosensitive resin having a first pattern obtained by polymerizing the first photosensitive resin by irradiation through at least one mask (4), then developing the first photosensitive resin; and transforming (E2) the first structure (10) into a second structure (1) by structuring at least one surface of the first structure by the addition of a second photosensitive resin (32) to the at least one surface, the second structure (1) being intended to at least partially form a manufacturing mold for the horology component.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: April 16, 2024
    Assignee: ROLEX SA
    Inventors: Florian Calame, Alexandra Maegli, Xavier Multone
  • Patent number: 11960209
    Abstract: A developing treatment method for performing a developing treatment on a resist film on a substrate, includes the following. (A) supplying a developing solution to the substrate and developing the resist film to form a resist pattern; (B) supplying a water-based cleaning liquid to the developed substrate to clean the substrate with the water-based cleaning liquid; (C) applying an aqueous solution of a water-soluble polymer to the substrate cleaned with the water-based cleaning liquid to form a hydrophilic layer having a hydrophilic property on a surface of the substrate; and (D) cleaning the substrate on which the hydrophilic layer has been formed, with a rinse liquid. (B) includes (a) accelerating a rotation speed of the substrate; and (b) after (a), decelerating the rotation speed of the substrate until a start of (C), wherein a deceleration in (b) is lower than an acceleration in (a).
    Type: Grant
    Filed: August 20, 2020
    Date of Patent: April 16, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Akiko Kai, Hiroshi Ichinomiya
  • Patent number: 11953828
    Abstract: Provided is a method of making a circuit pattern. The method includes: Step (A): providing a master substrate comprising a first photosensitive layer containing photosensitive particles; Step (B): providing an energy beam to reduce metal ions in a predetermined area of the first photosensitive layer to form multiple first metal particles; Step (C): removing unreduced photosensitive particles by a fixer to obtain a master mask; wherein the first metal particles form a first predetermined pattern in the master mask; Step (D): providing a chip comprising a second photosensitive layer containing second photosensitive particles; Step (E): putting the master mask on the second photosensitive layer and providing an energy beam to reduce metal ions of an uncovered part of the second photosensitive layer to form multiple atomized second metal particles; Step (F): removing unreduced photosensitive particles by a fixer to obtain the circuit pattern having line spacing at picoscopic/nanoscopic scale.
    Type: Grant
    Filed: February 9, 2021
    Date of Patent: April 9, 2024
    Assignee: LONGSERVING TECHNOLOGY CO., LTD
    Inventor: Ko-Cheng Fang
  • Patent number: 11955343
    Abstract: Two-stage bake photoresists with releasable quenchers for fabricating back end of line (BEOL) interconnects are described. In an example, a photolyzable composition includes an acid-deprotectable photoresist material having substantial transparency at a wavelength, a photo-acid-generating (PAG) component having substantial transparency at the wavelength, and a base-generating component having substantial absorptivity at the wavelength.
    Type: Grant
    Filed: March 22, 2022
    Date of Patent: April 9, 2024
    Assignee: Intel Corporation
    Inventors: Robert L. Bristol, Marie Krysak, James M. Blackwell, Florian Gstrein, Kent N. Frasure
  • Patent number: 11940731
    Abstract: Photoresist topcoat compositions comprise: a matrix polymer and a surface active polymer, wherein the surface active polymer comprises polymerized units of the following general formula (I): wherein: R1 represents a hydrogen atom, a halogen atom, a C1-C4 alkyl group, or a C1-C4 haloalkyl group; R2 independently represents a hydrogen atom or an optionally substituted alkyl group, wherein at least one R2 is not a hydrogen atom, wherein the R2 groups taken together optionally form a cyclic structure, and wherein the total number of carbon atoms for the R2 groups taken together is from 2 to 20; R3 represents an optionally substituted C1-C4 alkylene group, wherein an R2 group optionally forms a cyclic structure with R3; and R4 independently represents C1-C4 fluoroalkyl groups; wherein the total polymerized units of general formula (I) are present in the surface active polymer in an amount of 95 wt % or more based on total polymerized units of the surface active polymer; and wherein the surface active polymer i
    Type: Grant
    Filed: June 24, 2019
    Date of Patent: March 26, 2024
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Irvinder Kaur, Cong Liu, Doris Kang, Chunyi Wu
  • Patent number: 11940726
    Abstract: A lithography apparatus comprises a light source for emitting light; a mask mounting zone where a mask for reflecting the light is disposed; and a mask protective module disposed on the mask to transmit the light from the light source toward the mask. The mask protective module comprises a frame and a membrane supported by the frame, wherein the membrane includes a penetration region for transmitting the light and a peripheral region of which a light transmittance is lower than that of the penetration region.
    Type: Grant
    Filed: June 28, 2022
    Date of Patent: March 26, 2024
    Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
    Inventors: Jinho Ahn, Jung Hwan Kim, Seongchul Hong
  • Patent number: 11935748
    Abstract: A method of fabricating a device is presented. The method includes forming a multilayer stack (101?, 102?, 103?) on a substrate (10?, 100?) which has a principal surface. The multilayer stack includes a supporting layer (102?) formed over the principal surface of the substrate and a photoresist layer (103?) formed on the supporting layer, patterning the multilayer stack to form at least one opening such that the photoresist layer is undercut by the supporting layer and anisotropically dry etching the substrate.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: March 19, 2024
    Assignee: Google LLC
    Inventor: Anthony Edward Megrant
  • Patent number: 11914291
    Abstract: A resist composition comprising a base polymer and an acid generator containing a sulfonium salt which is structured such that an iodized or brominated hydrocarbyl group (exclusive of iodized or brominated aromatic ring) is bonded to a benzene ring via an ester bond-containing group offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.
    Type: Grant
    Filed: May 19, 2020
    Date of Patent: February 27, 2024
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Takayuki Fujiwara
  • Patent number: 11906897
    Abstract: A reflective mask includes a reflective multilayer over a substrate, a capping layer over the reflective multilayer, an absorber layer over the capping layer and including a top surface, and a protection layer directly on the top surface of the absorber layer. The absorber layer is formed of a first material and the protection layer is formed of a second material that is less easily to be oxidized than the first material.
    Type: Grant
    Filed: June 17, 2021
    Date of Patent: February 20, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Pei-Cheng Hsu, Yih-Chen Su, Chi-Kuang Tsai, Ta-Cheng Lien, Tzu Yi Wang, Jong-Yuh Chang, Hsin-Chang Lee