Abstract: A semiconductor integrated circuit includes: a current difference sense type of a sense amplifier including: an input line connected to memory cells as a target to be read, a reference line connected to reference cells, and a first pre-charge circuit configured to pre-charge the input line and the reference line; a second pre-charge circuit configured to perform pre-charging of the input line and pre-charging of the reference line; and a control circuit configured to control the second pre-charge circuit so that the second pre-charge circuit may perform both the pre-charging of the input line and the pre-charging of the reference line independently of each other, and start both the pre-charging of the input line and the pre-charging of the reference line earlier than pre-charging by the first pre-charge circuit.

Abstract: A first timing control unit controls an active timing of a first control signal to output a first driving control signal. A first data input/output unit transmits write data from a data input/output buffer to a global input/output line or transmits read data from the global input/output line to the data input/output buffer, in response to the first driving control signal. A second timing control unit controls an active timing of a second control signal to output a second driving control signal. A second data input/output unit transmits the write data from the global input/output line to a local input/output line or transmits the read data from the local input/output line to the global input/output line, in response to the second driving control signal.

Abstract: An information recording/reproducing device includes a first electrode layer, a second electrode layer, a recording layer as a variable resistance between the first and second electrode layer, and a circuit which supplies a voltage to the recording layer to change a resistance of the recording layer. Each of the first and second electrode layers is comprised of IV or III-V semiconductor doped with p-type carrier or n-type carrier.

Abstract: A method of method of writing to a magnetic memory cell includes selecting a magnetic memory cell of a magnetic memory array to be written to, the magnetic memory cell including a pair of MTJs, and setting a bit line (BL) coupled to the magnetic memory cell to a state that causes current to flow through the pair of MTJs in a manner that causes the direction of current flow through one of the MTJs of the pair of MTJs to be in a direction opposite to that of the other MTJ of the pair of MTJs.

Abstract: A ferroelectric memory device having a NAND array of a plurality of ferroelectric memory cells includes: a fully depleted channel layer; a gate electrode layer; and a ferroelectric layer located between the channel layer and the gate electrode layer. The data of the plurality of ferroelectric memory cells is erased by applying a first erase voltage to a bit line and a common source line and applying a second erase voltage to a string selection line and a ground selection line.

Abstract: The present application discloses a memory circuit having a first data line configured to carry a first data line signal and a second data line configured to carry a second data line signal. Further, a first driver is coupled to the first data line and the second data line and configured to establish a first current path for the first data line responsive to the second data line signal. Similarly, a second driver is coupled to the first data line and the second data line and configured to establish a second current path for the second data line responsive to the first data line signal. The memory circuit further has a first driver enabling line configured to selectively enable the first driver and a second driver enabling line configured to selectively enable the second driver.

Abstract: Some embodiments include apparatus and methods having a memory cell included in a device, a control line configured to receive a control signal to access the memory cell, and a first line configured to transfer information to and from the memory cell. The control signal has a first level during a first time interval and a second level during a second time interval of a memory operation. The apparatus and methods also include a module configured to reduce difference between a value of a voltage on the second line and a value of a voltage on a node of the device during a first time portion of the second time interval. Additional apparatus and methods are disclosed.

Abstract: Example embodiments of the inventive concept are directed to solid state device products, intermediate solid state devices, and methods of manufacturing and testing the same, with removable test terminals, which may permit in situ testing of one or more components of the solid state device products.

Abstract: A static random access memory (SRAM) write assist circuit with leakage suppression and level control is described. In one embodiment, the SRAM write assist circuit increases the amount of boost provided in a write cycle, while in another embodiment, the SRAM write assist circuit limits the amount of boost provided at higher supply voltages.

Abstract: A semiconductor device has an e-fuse module and a programming current generator. The e-fuse module includes an array of electrically programmable e-fuse elements. The programming current generator has a set of reference transistor elements, a selector for actuating the reference transistor elements to generate a selected reference current, and a current mirror for applying a programming current that is a function of the selected reference current to a selected e-fuse element of the array to program the resistance of the e-fuse element.

Abstract: An apparatus and method for reducing power consumption in digital circuits, particularly circuits including a charge pump. A driver may selectively drive a signal line, such as a memory device wordline, between a first voltage, which may be a voltage generated by the charge pump, and a different second voltage. A coupling circuit may be coupled between the signal line and the charge pump to selectively couple the signal line to the charge pump responsive to the signal line being driven from the first voltage to the second voltage. For example, the first voltage may be a voltage generated by the charge pump, and the second voltage may be a voltage having a lesser magnitude. As a result, the voltage on the signal line may be discharged into the charge pump when the voltage of the signal line transitions from the first voltage to the second voltage.

Abstract: A dynamic sense current supply circuit and an associated method for rapidly characterizing a resistive memory array is disclosed. In one embodiment, the disclosed circuit comprises a first and second dynamically programmable current mirror sub-circuit. Responsive to a bank of control signals, each dynamically programmable current mirror sub-circuit provides a dynamically adjustable current scaling factor. These scaling factors are used to scale a supplied reference current to generate a plurality of sense currents which can be used within a plurality of read operations on a resistive memory array. A digital circuit is also provided to sense and store the result of each read operation.

Abstract: An integrated circuit includes a static random access memory (SRAM) array coupled to a first voltage supply node and a second voltage supply node. The first and second voltage supply nodes provide a retention voltage across the SRAM array. A current limiter is disposed between the SRAM array and the first voltage supply node, and a voltage regulator is coupled in parallel with the current limiter between the SRAM array and the first voltage supply node. The voltage regulator is configured to maintain the retention voltage across the SRAM array above a predetermined level.

Abstract: The memory cell array has memory cells each positioned at respective intersections between a plurality of first wirings and a plurality of second wirings. Each of the memory cells has a rectifier element and a variable resistance element connected in series. The resistance element may have at least a first resistance value and a second resistance value higher than the first resistance value. The contact arrangement portion is formed to arrange a plurality of contacts on a plane. The contacts are connected to the first wirings or the second wirings. The probe can move along the plane to electrically contact with either of the contacts.

Abstract: A method is for operating a nonvolatile memory device, where the memory device includes a memory cell array and a page buffer block. The method includes loading program data into the page buffer block, loading random sequence data into the page buffer block, generating randomized data by executing a logic operation, such as a bit-wise XOR operation, in the page buffer circuit on the program data and the first random sequence data, and programming the randomized data into the memory cell array.

Abstract: A repair circuit of a semiconductor apparatus includes a transmission control unit configured to generate first through nth (n is an integer equal to or greater than 2) control signals in response to a repair information signal, and enable all mth through nth control signals when the repair information signal indicating an mth (m is an integer equal to or greater than 1 and equal to or less than n) TSV is inputted; transmission units configured to allocate transmission paths for first through nth signals to first through nth TSVs and a repair TSV in response to the first through nth control signals; and receiving units configured to receive the signals transmitted from the first through nth TSVs and the repair TSV in response to the first through nth control signals.

Abstract: A static random access memory (SRAM) includes a data line for transferring data to and from the memory and at least one reset line, a plurality of storage cells, each cell including an asymmetric feedback loop; an access device for selectively providing a connection between the at data line and the cell's first access node; a reset device for selectively providing a connection between a reset line and the cell's second access node. The SRAM further includes data access control circuitry for generating control signals for independently controlling the access device and the reset device and to generate a data access control signal. The SRAM also generates a reset control signal to trigger the reset device to provide the connection between the at least one reset line and the second access node in response to a write request to write the complementary predetermined value to the storage cell.

Abstract: To store, in a memory block whose word lines are written successively in a word line writing order, a plurality of data pages that are ordered by logical page address, the pages are written to the word lines so that every page that is written to any one of the word lines has a higher logical page address than any page that is written to a subsequently written word line, regardless of the sequence in which the pages are received for writing. Alternatively, the pages are written to the word lines so that for every pair of written word lines, the word line of the pair that is earlier in the writing order has written thereto a page having a higher logical page address than at least one page written to the other word line of the pair.

Abstract: A nonvolatile memory device and method using phase changes in a substrate to alter optical properties of the substrate for the purpose of data storage. The memory device includes a substrate containing a phase change material having phases comprising amorphous and crystalline phases. The phase change material has optical properties that change depending on whether the phase change material is in the amorphous phase or the crystalline phase. The memory device is further equipped with one or more devices that generate light and transmit the light into the substrate, and one or more devices that cause the phase change material to change between the amorphous and crystalline phases thereof. At least one optical sensing device detects light that passes into the phase change material to the optical sensing device and generates electrical signals based thereon, which are converted into bit values if they exceed a threshold.

Abstract: The present invention relates to a synchronous semiconductor memory device with double data rate, and more particularly, to a synchronous semiconductor memory device for inputting and outputting data using a free-running clock and inserting a preamble indicative of start of data into the outputted data. A semiconductor memory device of the present invention receives a data read command from the exterior of the memory device in response to a predetermined clock signal inputted from the exterior, and outputting data including a preamble in response to the clock signal.