Abstract: Disclosed is a semiconductor memory device which includes a read data latch that holds read data from a phase change memory and latches write data entered from outside and holds write data entered from outside, a write data latch that holds the write data for a cell for the time duration of a preset number of cycles until start of data write, a transfer switch that controls whether or not an output of the read data latch is to be transferred to the write data latch, a comparator circuit that decides whether or not data transferred to the write data latch via the transfer switch and held in the write data latch and data in the read data latch are coincident with each other, and a write flag latch that latches an output of the comparator circuit. Data is written only in case there is a write request and the result of comparison of the comparator circuit indicates non-coincidence, that is, only in bits in need of data writing.

Abstract: According to a preferred embodiment of the present invention, an analog memory includes a first to third memory blocks. Each of the first to third memory blocks includes a plurality of capacitive elements for storing electric charges corresponding to an input signal, an output line for transferring the electric charges, and a plurality of MOS transistors each for changing connection between the capacitive element and the output line. When a signal is outputted from the output line to a buffer circuit by sequentially connecting the capacitive element to the output line in the first memory block, all connections between the capacitive elements and the output line are disconnected in the second and third memory blocks with the output line of the first memory block and the output line of the second memory block connected.

Abstract: A semiconductor memory device to/from which a data signal is input/output in synchronism with a clock, including: an input signal delaying circuit for delaying an input signal to output the delayed input signal; a delayed clock generation circuit for delaying an input clock by different amounts of delay time to thereby generate a plurality of delayed clocks; a plurality of delayed input signal holding circuits for holding the delayed input signal on the plurality of delayed clocks, respectively; an input signal latch timing determination circuit for outputting a determination signal indicating a timing at which to latch the delayed input signal, based on a plurality of held signals held by the delayed input signal holding circuits; and a held signal selector circuit for integrating the plurality of held signals into a single signal.

Abstract: A signal aligning circuit includes a plurality of pads receiving input signals in parallel 1 bit by 1 bit; a first transferring unit for transferring the input signals as first signals in synchronization with a first clock signal of an internal clock, and transferring the input signals as second signals in synchronization with a second clock signal of the internal clock; a second transferring unit for transferring the first signals in synchronization with the second clock signal of the internal clock; and an aligning unit for aligning the first and second signals transferred from the first and second transferring units and outputting the aligned signal as output signals.

Abstract: In accordance with at least one embodiment, a method, apparatus, and article of manufacture are provided for configuring a virtual boundary register in a programmable logic device (PLD), transmitting a first user-definable-command operation code (opcode) to the PLD to effect programming of a memory device coupled to the PLD, and preferably transmitting a second user-definable-command opcode to the PLD, the second user-definable-command opcode causing the physical boundary scan circuitry to load the virtual boundary register. The foregoing is preferably achieved in accordance with a boundary scan standard (e.g., Institute of Electrical and Electronics Engineers, Inc. (IEEE) 1149.1, dated 2001).

Abstract: A voltage generator for nonvolatile memory that generates an applied voltage to be applied to a nonvolatile memory includes a first voltage generator to generate a first voltage corresponding to the applied voltage, a reference voltage generator to generate a reference voltage, a comparator to compare the first voltage with the reference voltage and output a boost operation control signal according to a comparison result, and a booster to generate the applied voltage in a pulse-like voltage waveform by starting or stopping boost operation based on the boost operation control signal. The applied voltage corresponding to the first voltage upon inversion of the boost operation control signal is varied within one pulse-like voltage waveform by varying one of the first voltage and the reference voltage.

Abstract: A latch-based integrated circuit random access memory having selectable bit write capability that is less susceptible to disturbing data stored in unselected bits during write operations by utilizing an inhibit signal to block writing of the unselected bits.

Abstract: A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.

Abstract: A memory reading apparatus transfers digital data from a memory array that is independent of external clocking rate, where the data transmission time is not limited by the external clock period, and the internal timing of controls permits flexible column selection and no conflicts in the timing between external clock signals and internal bit line sensing ready signal. The memory read apparatus has a data read path circuit and a memory read control apparatus. The data read path circuit is in communication with the memory to acquire the selected data read from the memory, synchronize the selected data, and transfer the selected data from the memory. The memory read control apparatus is in communications with the data read path circuit for selecting the data to be read from the memory, for providing self-feedback signals for synchronizing the selected data for transfer from the memory.

Abstract: The magnetic fields generated by the electric current flowing through the respective lines are pulled into a magnetic yoke whereby the magnetic fields are concentrated on a magnetoresistive element including the magnetosensitive layer. Namely, the opposite magnetic fields are brought close to each other in the magnetosensitive layer in reading of information to cancel each other efficiently.

Abstract: One embodiment of the present invention includes applying a first value to a bit line, boosting word lines associated with the bit line and a common selection line to create a first condition based on the first value, and cutting off a boundary non-volatile storage element associated with the common selection line to maintain the first condition for a particular non-volatile storage element associated with the bit line and common selection line. A second value is applied to the bit line and at least a subset of the word lines are boosted to create a second condition for a different non-volatile storage element associated with the bit line and common selection line. The second condition is based on the second value. The first condition and the second condition overlap in time. Both non-volatile storage elements are programmed concurrently, based on their associated conditions.

Abstract: An exemplary motherboard includes a first slot arranged for mounting a first type of memory, a second slot arranged for mounting a second type of memory, a voltage regulator electronically connected to the first slot and the second slot, and a serial presence detect (SPD) unit connected to the voltage regulator. The first memory and the second memory alternatively mounted on the motherboard, the SPD detects which type of memory is mounted on the motherboard, and the voltage regulator outputs voltages suitable for the type of the memory mounted on the motherboard according to a detection result of the SPD.

Abstract: A nonvolatile semiconductor memory device comprises an array of memory cells each including an antifuse to store information based on a variation in resistance in accordance with destruction of the insulator in the antifuse. The antifuse includes a semiconductor substrate, a first conduction layer formed in the surface of the semiconductor substrate, a first electrode provided on the first conduction layer to be given a first voltage, a second conduction layer provided on the semiconductor substrate with the insulator interposed therebetween, and a second electrode provided on the second conduction layer to be given a second voltage different from the first voltage. The first electrode or the second electrode is formed of a metal silicide.

Abstract: An output buffer includes first and second input transistors, first and second output loads and a current source. The first and second input transistors have first current electrodes that are commonly coupled to each other and control electrodes that are respectively coupled to a first differential input signal and a second differential input signal. The first and second output loads are coupled between a first power supply voltage and the first and second input transistors, respectively, wherein an output terminal is coupled to a node where the first output load is coupled to the first input transistor. The current source is coupled between the first current electrodes of the first and second input transistors and a second power supply voltage, wherein the second output load has an impedance value substantially one half of an impedance value of the first output load. Therefore, a differential output signal may be outputted through a single output terminal.

Abstract: A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.

Abstract: A memory integrated circuit device may include a first temperature sensing unit, a first voltage adjusting unit, and a MOS back bias voltage outputting unit. The first voltage adjusting unit may be configured to output a voltage based on an output signal of the temperature sensing unit such that the voltage output changes based on changes in a sensed temperature. The MOS back bias voltage outputting unit may be configured to receive the voltage output by the voltage adjusting unit and configured to output the MOS back bias voltage based on the voltage output by the first voltage adjusting unit.

Abstract: Methods, devices and systems for non-volatile static random access memory (SRAM) are provided. One method embodiment for operating an SRAM includes transferring data from a pair of static storage nodes of the SRAM to a pair of non-volatile storage nodes when the SRAM is placed in a standby mode. The method further includes transferring data from the pair of non-volatile storage nodes to the pair of static storage nodes when the SRAM exits the standby mode.

Abstract: A memory device including a plurality of memory cells, each with a control gate NMOS transistor sharing a floating gate with a program/erase PMOS transistor which is, in turn, connected in series with an access PMOS transistor. The memory cells are formed in a common N-Well formed in a P-substrate, the NMOS transistor being formed in a p-doped pocket or base. The program/erase PMOS includes a gate, and first and second P+ doped regions formed in the N-Well, wherein the first P+ region is electrically connected to a corresponding bit line. The access PMOS includes a gate, and first and second P+ regions formed within the N-Well, wherein the first P+ region is electrically connected to the second P+ region of the program/erase PMOS, and the gate is electrically connected to a corresponding word line.

Abstract: A method for use with devices in a stacked package is discussed. By preprogramming a unique identifier into a device during manufacture, the device can determine its position in the stack and perform a task based on its position in the stack. In one embodiment, the task is power-up.

Abstract: Semiconductor memory device and operation method thereof includes an output enable signal generator configured to synchronize a read command to a data clock signal to generate an output enable signal according to a CAS latency, a sampling control signal generator configured to generate a sampling control signal that is activated during a period corresponding to an activation timing of the output enable signal and an end timing of data output, a read clock signal generator configured to sample the data clock signal in response to the sampling control signal to generate a read clock signal and a data output circuit configured to output data according to the read clock signal.