Abstract: A display substrate, a manufacturing method thereof and a display device. In a plane parallel to the display substrate, the display substrate includes a plurality of sub-pixels, at least one sub-pixel includes a pixel driving circuit and a light emitting device connected to the pixel driving circuit, the pixel driving circuit at least includes a storage capacitor, a driving transistor and at least one switching transistor; in a plane perpendicular to the display substrate, the display substrate includes a semiconductor layer and a plurality of conductive layers; and a gate electrode of the driving transistor and a gate electrode of the at least one switching transistor are arranged on different conductive layers respectively.

Abstract: A light-emitting device includes: a first electrode; a second electrode facing the first electrode; an interlayer between the first electrode and the second electrode and including an emission layer; and a first capping layer and a second capping layer outside the second electrode, wherein the first capping layer includes at least one compound selected from compounds represented by Formulae 1-1 to 1-3, as defined herein, and the second capping layer includes at least one compound selected from compounds represented by Formulae 2-1 to 2-6, as defined herein.

Abstract: An opto-electronic device includes a nucleating inhibiting coating (NIC) disposed on a first layer surface of the device in a first portion of a lateral aspect thereof; and a conductive coating disposed on a second layer surface of the device in a second portion of the lateral aspect thereof; wherein an initial sticking probability for forming the conductive coating onto a surface of the NIC in the first portion, is substantially less than the initial sticking probability for forming the conductive coating onto the surface in the second portion, such that the surface of the NIC in the first portion is substantially devoid of the conductive coating.

Abstract: The disclosure provides a manufacturing method of a mass transfer device. The manufacturing method includes the following. A transfer substrate coated with an adhesive layer is provided. A light emitting diode is transferred from an original substrate to the transfer substrate. A supporting structure is etched on the light emitting diode, where the supporting structure includes at least two supporting columns extending from the transfer substrate, and ends of the at least two supporting columns away from the transfer substrate are connected with the light emitting diode, so that the light emitting diode is arranged separately from the transfer substrate. The adhesive layer is removed, so that the light emitting diode is fixed on the transfer substrate only through the supporting structure. In addition, the disclosure also provides a mass transfer device and display equipment.

Abstract: A semiconductor memory cell comprising an electrically floating body having two stable states is disclosed. A method of operating the memory cell is disclosed.

Abstract: A semiconductor structure includes: a pad structure disposed above a substrate; and a capacitor structure which is disposed between the substrate and the pad structure, is arranged to be opposite to the pad structure, and includes at least two capacitor units connected in parallel and spaced apart from each other, each of the capacitor units includes at least one capacitor device.

Abstract: Provided are a semiconductor structure and a method for manufacturing the same. The method for manufacturing a semiconductor structure includes that a substrate is provided, and a first structure is formed on the substrate; a first supporting layer is formed, the first supporting layer covering the first structure; a second supporting layer is formed, the second supporting layer covering the first supporting layer; and the first supporting layer and the second supporting layer on an upper surface of the first structure, and the first supporting layer between the first structure and the second supporting layer are removed, a top surface of the second supporting layer being higher than the top surface of the first structure.

Abstract: Disclosed is a light emitting display panel in which a portion overlapped with data lines is patterned in a cathode electrode, and a light emitting display apparatus using the same. The light emitting display panel comprises a substrate, a first signal line along a first direction of the substrate, a first insulating film covering the first signal line, a second insulating film covering the first insulating film, an anode electrode patterned by each pixel, a bank covering ends of the anode electrode, a first light emitting layer on the anode electrode disposed at a first side of the bank, a second light emitting layer on the anode electrode disposed at a second side of the bank, a first cathode electrode on the first light emitting layer, and a second cathode electrode on the second light emitting layer, wherein the first and second cathode electrodes are separated from each other on the upper surface of the bank.

Abstract: A display panel and a display device are provided. The display panel includes: a display part including a plurality of data lines; a fan-out part including a plurality of fan-out lines; and a lead wire part including a plurality of first lead wires which are respectively connected with the plurality of data lines through the plurality of fan-out lines, and the plurality of fan-out lines are fanned out between the lead wire part and the display part. The plurality of first lead wires each include a first lead wire subpart and a compensation part to form a plurality of first lead wire subparts and a plurality of compensation parts, the plurality of first lead wire subparts are respectively connected with the plurality of compensation parts; the first lead subparts (WS1) have a width different from that of the compensation parts.

Abstract: An embodiment of the present disclosure comprises a display device including a substrate including a display area and a peripheral area around the display area, a thin-film transistor on the substrate in the display area and a display element electrically connected to the thin-film transistor, and a first voltage line and a second voltage line located on the substrate in the peripheral area and supplying power for driving the display element, wherein the first voltage line is a common voltage line and entirely surrounds the display area, the second voltage line is a driving voltage line and is arranged to correspond to one side of the display area, and the first voltage line and the second voltage line are on different layers.

Abstract: An object of the present invention is to provide a n-type semiconductor element having improved n-type semiconductor characteristics and excellent stability, where the n-type semiconductor element includes a second insulating layer, where the second insulating layer contains: A. (a) a compound having one carbon-carbon double bond or one conjugated system bound to at least one group represented by general formula (1) and at least one group represented by general formula (2); and (b) a polymer; or B. a polymer having, in its molecular structure, the remaining group after removing some hydrogen atoms from R1, R2, R3, or R4 in the compound (a), or the remaining group after removing some hydrogen atoms from the carbon-carbon double bond or the conjugated system in the compound (a).

Abstract: An object of the present invention is to provide a n-type semiconductor element having improved n-type semiconductor characteristics and excellent stability with a convenient process, where the n-type semiconductor element includes: a substrate; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer for insulating the semiconductor layer from the gate electrode; and a second insulating layer positioned on the opposite side of the semiconductor layer from the gate insulating layer and in contact with the semiconductor layer, where the semiconductor layer contains nanocarbon, and the second insulating layer contains (a) a compound with an ionization potential in vacuum of 7.0 eV or less, and (b) a polymer.

Abstract: A display device includes signal lines and pixels connected thereto. A first pixel includes a first transistor including a first gate electrode, a first channel region overlapping the first gate electrode, a first source region, and a second drain region facing the first source region, with the first channel region interposed between the first source region and the second drain region. A third transistor includes a third gate electrode, a third channel region overlapping the third gate electrode, a third drain region connected to the first gate electrode, and a third source region facing the third drain region with the third channel region interposed between the third source region and the third drain region. A shielding part overlaps a boundary between the third source region and the third channel region and does not overlap a boundary between the third drain region and the third channel region.

Abstract: A display panel, a manufacturing method thereof and a display apparatus are provided. In some embodiments, the display panel includes a substrate, pixel structures in an array, a protruding ring, an encapsulation layer, and solid sealant. The substrate includes a predetermined hole region, first adjacent region surrounding the hole region, second adjacent region surrounding the first adjacent region, and a display region surrounding the second adjacent region and in which the pixel structures are located. The protruding ring is located in the second adjacent region. The encapsulation layer covers the pixel structures and sides of the protruding ring away from the substrate. The protruding ring and the encapsulation layer covering the protruding ring form a dam. The solid sealant fills the first adjacent region and the hole region enclosed by the dam and is provided with an opening configured to release stress generated by the solid sealant during full curing.

Abstract: An display device may include a substrate including an active area and an inactive area surrounding the active area, a plurality of thin film transistors disposed in the active area, each of the thin film transistor including a semiconductor layer and a first electrode, a light emitting elements disposed in the active area, each of the light emitting element including an anode electrode and an organic light emitting layer, a connection area and a peripheral area disposed in the inactive area, and a first reflective electrode disposed in the connection area.

Abstract: A light emitting device, a display device comprising same, and a method for manufacturing a display device are provided. The light emitting device comprises: a first conductivity type semiconductor doped to have a first polarity, an active layer on the first conductivity type semiconductor, a second conductivity type semiconductor on the active layer and doped to have a second polarity different from the first polarity and an insulating material layer surrounding side surfaces of the first conductivity type semiconductor, the second conductivity type semiconductor, and the active layer, wherein the insulating material layer includes an insulating material film and an element orienter bonded to an outer peripheral surface of the insulating material film.

Abstract: In an example, the present invention provides a method of manufacturing a solar module. The method includes providing a substrate member having a surface region, the surface region comprising a spatial region, a first end strip comprising a first edge region and a first interior region, the first interior region comprising a first bus bar, a plurality of strips, a second end strip comprising a second edge region and a second interior region, the second edge region comprising a second bus bar, the first end strip, the plurality of strips, and the second end strip arranged in parallel to each other and occupying the spatial region such that the first end strip, the second end strip, and the plurality of strips consists of a total number of five (5) strips. The method includes separating each of the plurality of strips, arranging the plurality of strips in a string configuration, and using the string in the solar module.

Abstract: It is an object of the present invention to provide an organic EL element including a capping layer constituted by two layers consisting of a first capping layer and a second capping layer that has a refractive index that is higher than that of the first capping layer, in order to improve the light extraction efficiency compared with an organic EL element including a capping layer constituted by a single layer. The present invention provides an organic electroluminescent element at least including an anode, a hole transport layer, a light emitting layer, an electron transport layer, a cathode, and a capping layer arranged in this order, wherein the capping layer has a structure constituted by two layers consisting of a first capping layer and a second capping layer, a refractive index of the second capping layer is higher than a refractive index of the first capping layer throughout a wavelength range from 450 to 650 nm, and the second capping layer contains an arylamine compound having a specific structure.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure include a first electrode, a second electrode opposed to the first electrode, and an organic photoelectric conversion layer provided between the first electrode and the second electrode and formed using a plurality of materials having average particle diameters different from each other, the plurality of materials including at least fullerene or a derivative thereof, and a particle diameter ratio, of a first material having a smallest average particle diameter among the plurality of materials with respect to a second material having a largest average particle diameter among the plurality of materials, is 0.6 or less.

Abstract: The present application discloses a QLED manufacturing method, which includes following steps of: providing a substrate provided with a bottom electrode, and preparing a quantum dot light emitting layer on the substrate; illuminating after depositing a first compound solution on a surface of the quantum dot light emitting layer, here a first compound is a compound capable of being photodegraded into ions after the illumination.