Abstract: An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.

Abstract: A display device includes signal lines and pixels connected thereto. A first pixel includes a first transistor including a first gate electrode, a first channel region overlapping the first gate electrode, a first source region, and a second drain region facing the first source region, with the first channel region interposed between the first source region and the second drain region. A third transistor includes a third gate electrode, a third channel region overlapping the third gate electrode, a third drain region connected to the first gate electrode, and a third source region facing the third drain region with the third channel region interposed between the third source region and the third drain region. A shielding part overlaps a boundary between the third source region and the third channel region and does not overlap a boundary between the third drain region and the third channel region.

Abstract: The various described embodiments provide a transistor with a negative capacitance, and a method of creating the same. The transistor includes a gate structure having a ferroelectric layer. The ferroelectric layer is formed by forming a thick ferroelectric film, annealing the ferroelectric film to have a desired phase, and thinning the ferroelectric film to a desired thickness of the ferroelectric layer. This process ensures that the ferroelectric layer will have ferroelectric properties regardless of its thickness.

Abstract: A pixel definition layer, a display substrate, a display device and an inkjet printing method are provided. The pixel definition layer includes a first pixel definition layer and a second pixel definition layer. The first pixel definition layer includes first openings, which include a first sub-pixel opening and a second sub-pixel opening; and an opening size of the second sub-pixel opening is larger than an opening size of the first sub-pixel opening. The second pixel definition layer is on the first pixel definition layer, and includes second openings, the second openings include a fourth sub-pixel opening and a fifth sub-pixel respectively corresponding to and connecting to the first sub-pixel opening and the second sub-pixel opening. A difference between opening sizes of the fourth sub-pixel opening and the first sub-pixel opening is larger than a difference between opening sizes of the fifth sub-pixel opening and the second sub-pixel opening.

Abstract: A display device includes: a substrate including a display area and a peripheral area outside the display area; a plurality of display elements arranged in the display area; and a pad disposed in the peripheral area and having a multi-layered structure, where the multi-layered structure of the pad includes: a metal layer; a conductive protective layer on a top surface of the metal layer; and a metal thin film on a top surface of the conductive protective layer.

Abstract: An organic light emitting diode display panel is provided, including a first substrate, a second substrate opposite to the first substrate, at least one first light emitting layer on a side of the first substrate facing the second substrate, at least one second light emitting layer on the side of the first substrate facing the second substrate, the at least one second light emitting layer being separated from the at least one first light emitting layer, and at least two third light emitting layers on a side of the second substrate facing the first substrate. The at least one first light emitting layer and the at least one second light emitting layer are aligned with corresponding ones of the at least two third light emitting layers.

Abstract: A display panel, a display screen, and a display terminal are provided. The display panel includes a substrate and a plurality of wavy first electrodes disposed on the substrate. The plurality of first electrodes extend in parallel in the same direction and have an interval between adjacent first electrodes. In an extending direction of the first electrode, a width of the first electrode changes continuously or intermittently, and the interval changes continuously or intermittently.

Abstract: The present disclosure provides a display substrate, a manufacturing method thereof, and a display device. The display substrate includes: a backplane; a transistor layer on a side of the backplane; a first planarization layer on a side of the transistor layer away from the backplane; an auxiliary cathode layer on a side of the first planarization layer away from the transistor layer; a second planarization layer on a side of the auxiliary cathode layer away from the first planarization layer; and a light-emitting element layer on a side of the second planarization layer away from the auxiliary cathode layer. The light-emitting element layer includes a primary cathode layer electrically connected to the auxiliary cathode layer.

Abstract: A three-dimensional (3D) integrated circuit (IC) is provided. In some embodiments, a second IC die is bonded to a first IC die by a first bonding structure. A third IC die is bonded to the second IC die by a second bonding structure. The second bonding structure is arranged between back sides of the second IC die and the third IC die opposite to corresponding interconnect structures and comprises a first TSV (through substrate via) disposed through a second substrate of the second IC die and a second TSV disposed through a third substrate of the third IC die. The second bonding structure further comprises conductive features with oppositely titled sidewalls disposed between the first TSV and the second TSV.

Abstract: The present disclosure discloses a display panel and a display device. The display device includes a first display area and a second display area, where the first display area includes a plurality of first sub-pixel units, and each of the first sub-pixel units includes a first light emitting device and a driving circuit for driving the first light emitting device to emit light; where the second display area includes a plurality of second sub-pixel units and a plurality of first voltage signal lines, each of the second sub-pixel units includes a second light emitting device, and the first voltage signal lines are directly and electrically connected to anodes of the second light emitting devices.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode and formed using a plurality of materials having average particle diameters different from each other, the plurality of materials including at least fullerene or a derivative thereof.

Abstract: An organic light emitting diode (OLED) display includes an OLED panel and an electroconductive (EC) filter. The OLED panel provides an image. The EC filter permits the image to be viewed within a first viewing angle in response to a first voltage applied to the EC filter, and permits the image to be viewed exclusively within a second viewing angle in response to a second voltage applied to the EC filter.

Abstract: A MRAM cell includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a spin torque oscillator stack, and a first nonmagnetic spacer layer located between the free layer and the spin torque oscillator stack.

Abstract: The present disclosure relates to a display panel, a display screen, and a display terminal. The display panel includes a substrate, a pixel-defining layer disposed on the substrate, and an isolation structure disposed on the pixel-defining layer. The isolation structure includes at least two layer structures stacked in sequence along a direction perpendicular to a surface of the substrate. At least one of the at least two layer structures has a width varied continuously or intermittently along an extending direction of the isolation structure. The extending direction of the isolation structure is parallel to the surface of the substrate. The width of the layer structure refers to a size of a projection, along a direction perpendicular to the extending direction, of the layer structure on a plane coplanar with the surface of the substrate.

Abstract: The invention provides an inexpensive flywheel diode having a low power loss. A semiconductor substrate side of a gate electrode provided on a surface of an anode electrode side of a semiconductor substrate including silicon is surrounded by a p layer, an n layer, and a p layer via a gate insulating film. The anode electrode is in contact with the p layer with a low resistance, and is also in contact with the n layer or the p layer, and a Schottky diode is formed between the anode electrode and the n layer or the p layer.

Abstract: Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure. (RNH3)2MA(n?1)M1nX(3n+1)??formula (1), wherein the definitions of R, MA, M1, X, and n are as defined above.

Abstract: A double-sided display panel includes a base substrate, a thin film transistor array, a first OLED light emitting layer located in a top light emitting area and a second OLED light emitting layer located in a bottom light emitting area; the thin film transistor array is located in the top light emitting area; a thin film transistor of the thin film transistor array simultaneously controls a top light emitting subpixel and a bottom light emitting subpixel. Through one OLED back plate to realize double-sided simultaneous display, can reduce whole thickness of the OLED double-sided display panel, simplify manufacturing process, thereby saving manufacturing costs.

Abstract: The embodiments of the invention provides a semiconductor device and a method for manufacturing it The semiconductor device provided by the embodiments of the invention comprises: a first electrode layer; a substrate layer positioned on the first electrode layer; an epitaxy layer positioned on the substrate layer and comprising a first surface far from the substrate layer; a plurality of well regions disposed by extending from the first surface into the epitaxy layer and orthographic projections thereof on the first surface are spaced from each other; a second electrode layer, comprising first metal layers, each disposed between adjacent two of the well regions on the first surface and forms a Schottky contact with the epitaxy layer, wherein the Schottky contact has variable barrier height. The semiconductor device provided by the embodiments of the invention may improve the forward conduction ability without affecting the reverse blocking ability.

Abstract: A source to facilitate precise vapor deposition in processes to obtain organic light emitting diodes (OLEDs) in a display panel, includes forming a plurality of grooves on a first substrate; in filling organic light emitting materials into the grooves and providing a second substrate to receive the vaporized organic light emitting materials. The first substrate is aligned with the second substrate and the first substrate is heated to vaporize the organic light emitting materials in the grooves. The vapor deposition regions of the second substrate form an organic light emitting material layer after the deposition, the layer can then be used in an OLED display panel. The shadow effect is greatly reduced, a method for the procedure is also disclosed.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming first and second well regions with different conductivity types in a semiconductor substrate. A well interface is formed between the first and second well regions. The method also includes patterning the semiconductor substrate to form a first fin structure in the first well region, a second fin structure in the second well region, and a first trench between the first and second fin structures. The first trench exposes the well interface in the semiconductor substrate. The method further includes forming insulating spacers on opposite sidewalls of the first trench and etching the semiconductor substrate below the first trench using the insulating spacers as an etch mask, to form a second trench below the first trench. In addition, the method includes filling the first and second trenches with an insulating material.