Abstract: A display device is applicable to a display-related technical field, and a display device using micro light emitting diodes (LED) are disclosed. The display device using light emitting diodes includes a wiring substrate in which a plurality of unit pixels is defined, a first wiring electrode and a second wiring electrode arranged on the wiring substrate, a first electrode pad and a second electrode pad respectively connected to the first wiring electrode and the second wiring electrode, and at least one light emitting diode electrically connected to the first electrode pad and the second electrode pad in each unit pixel region to form a subpixel.

Abstract: A semiconductor die includes semiconductor substrate and interconnection structure. Interconnection structure includes first conductive lines, first conductive patterns, first pillar stacks, second pillar stacks, gate patterns. First conductive lines extend parallel to each other in first direction and are embedded in interlayer dielectric layer. First conductive patterns are disposed in row along first direction and are embedded in interlayer dielectric layer beside first conductive lines. First pillar stacks include first pairs of metallic blocks separated by first dielectric material blocks. Second pillar stacks include second pairs of metallic blocks separated by second dielectric material blocks. Each second pillar stack is electrically connected to respective first conductive pattern. Gate patterns extend substantially perpendicular to first conductive lines. Each gate pattern directly contacts one respective second pillar stack and extends over a group of first pillar stacks.

Abstract: A power semiconductor module arrangement includes: a housing; a substrate arranged in or forming a bottom of the housing, the substrate including a dielectric insulation layer and a first metallization layer attached to the dielectric insulation layer; a semiconductor arrangement on the substrate; and bus bars electrically coupled to each other by the semiconductor arrangement and/or the first metallization layer. Each bus bar has opposing first and second ends, a first surface having a first outline, and a second surface opposite the first surface, the second surface having a second outline that is a projection of the first outline. The first end of each bus bar is electrically and mechanically coupled to the substrate, the second end extending to the outside of the housing. The outline of the first surface of a bus bar is identical to the outline of the first surface of each of the other bus bars.

Abstract: Various methods and systems are provided for a multi-frequency transducer array. In one example, the transducer array may be fabricated via a wafer scale approach, where a first comb structure, with a first type of element, is formed by dicing a first acoustic stack and a second comb structure, with a second type of element, is formed by dicing a second acoustic stack. Combining the first and second comb structures may form a multi-frequency transducer array.

Abstract: Provided is an organic light emitting device (OLED) having an emission spectrum, the OLED comprising: an anode; a cathode; and an emissive region, disposed between the anode and the cathode, comprising: a first host material having a highest occupied molecular orbital (HOMO) energy and a lowest unoccupied molecular orbital (LUMO) energy; and an emitter material having a HOMO energy and a LUMO energy; wherein, the emitter material is singlet fluorescent emitter or a doublet fluorescent emitter; High HOMO energy is the highest HOMO energy among all materials in the emissive region; Low LUMO energy is the lowest LUMO energy among all materials in the emissive region; ?E is the energy gap between the High HOMO energy and the Low LUMO energy; when the emitter material is a singlet fluorescent emitter, then ES is the singlet energy S1 of the emitter material, which is the lowest S1 energy among all materials in the organic emissive region; when the emitter material is a doublet fluorescent emitter, then ES i

Abstract: A method for forming a shielding layer over a semiconductor package is provided. The method comprises: providing a jig having a metal frame and a carrier tape attached onto the metal frame via an adhesive layer; forming an opening through the adhesive layer and the carrier tape; disposing a semiconductor package on the jig over the opening such that the semiconductor package is supported on and attached to the carrier tape via the adhesive layer; forming a groove in the adhesive layer and around the opening by isotropic etching; forming a shielding layer over the semiconductor package and the jig; and removing the semiconductor package with the shielding layer from the jig.

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques directed to creating a transistor structure by selectively growing a 2D TMD directly in a stacked channel configuration, such as a stacked nanowire or nanoribbon formation. In embodiments, this TMD growth may occur for all of the nanowires or nanoribbons in the transistor structure in one stage. Placement of a SAM on a plurality of dielectric layers within the transistor structure stack facilitates channel deposition and channel geometry in the stacked channel configuration. Other embodiments may be described and/or claimed.

Abstract: A laminated structure including, a ground substrate with a crystalline oxide film containing gallium oxide as a main component and a root-mean-square of a roughness on a surface of the crystalline oxide film is 0.2 ?m or less. A diameter of the ground substrate is 50 mm or more and TTV of the ground substrate is 30 ?m or less.

Abstract: A display device including: a substrate; first to third light emitting portions on the substrate; a light sensing portion on the substrate and configured to sense an incident light, a light blocking layer having a light blocking opening that overlaps the light sensing portion; a first color filter on the first light emitting portion, and configured to transmit the first light, and block the second light and the third light; a second color filter on the second light emitting portion, overlapping the light blocking opening, and configured to transmit the second light, and block the first light and the third light; a third color filter on the third light emitting portion, and configured to transmit the third light, and block the first light and the second light; and a first light blocking pattern on the second color filter and overlapping a portion of the light blocking opening.

Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

Abstract: A camera may include an organic substrate for placement of one or more components. An image sensor may be attached to the organic substrate to capture light passing through one or more lenses of the camera. The image sensor and the organic substrate may be moved, using an actuator, relative to the lenses in one or more directions. The organic substrate may be one single piece of an organic printed circuit board (PCB), or include multiple separate organic PCBs joined together. The organic substrate may include a first recess at a first side towards the lenses, and/or a second recess at a second side opposite the first side near an edge of the organic substrate.

Abstract: This application provides a perovskite solar cell structurally including a transparent electrode, an electron transport layer, a perovskite layer, a hole transport layer and a second electrode in sequence, where the perovskite layer may include a main perovskite layer and a one-dimensional perovskite coating layer covering surface and periphery of the main perovskite layer, where the one-dimensional perovskite coating layer may include: a first overlay layer disposed between the main perovskite layer and the electron transport layer; and a second overlay layer disposed between the main perovskite layer and the hole transport layer.

Abstract: A method of manufacturing a memory device includes providing a substrate, forming a stack layer on the substrate, and forming a hard mask layer on the stack layer. The hard mask layer has a protrusion. The method includes forming a patterned mandrel on the hard mask layer, the patterned mandrel includes a first mandrel disposed adjacent to the protrusion, a second mandrel disposed on the top surface of the protrusion, and a third mandrel. The method further includes using the patterned mandrel as a mask, the hard mask layer and the stack layer are sequentially patterned to form a dummy structure and a word line structure on the substrate. The portion of the stack layer corresponding to the first and second mandrels is formed as the dummy structure. The portion of the stack layer corresponding to the third mandrel is formed as the word line structure.

Abstract: Semiconductor structures and method for forming the same are provide. The method includes forming a fin structure extending in a first direction over a substrate and forming spacers on sidewalls of the fin structure to laterally sandwiched the fin structure in a second direction. The method further includes etching the fin structure in a third direction to form a recess between the spacers and forming a doped region in the fin structure exposed by the recess. The method further includes removing an upper portion of the doped region and annealing a bottom portion of the doped region after removing the upper portion of the doped region. The method further includes forming a source/drain structure over the bottom portion of the doped region.

Abstract: A display panel including a drive substrate, a first LED structure, a second LED structure and a third LED structure that are disposed to be sequentially stacked and at least one electrical switching member. The at least one electrical switching member is disposed on a side of the third LED structure adjacent to the drive substrate. One of the electrical switching members is correspondingly connected to and disposed on one of the conductive pads. At least one of the first independent electrode, the second independent electrode, and the third independent electrode is connected to one of the electrical switching members through a through-hole.

Abstract: A passivation layer is formed over an interconnect structure. An opening is etched at least partially through the passivation layer. A first conductive layer is deposited over the passivation layer. The first conductive layer partially fills the opening. An insulator layer is deposited over the first conductive layer. The insulator layer partially fills the opening. A second conductive layer is deposited over the insulator layer. The second conductive layer completely fills the opening. A first conductive structure is formed that is electrically coupled to the first conductive layer. A second conductive structure is formed that is electrically coupled to the second conductive layer.

Abstract: Systems and methods for controlling one or more qubits in a quantum processor are disclosed. The system comprises a quantum processor comprising one or more spin-based qubits; and a dielectric resonator positioned in proximity to the quantum processor. The dielectric resonator provides a magnetic field. The quantum processor is positioned in a portion of the magnetic field provided by the resonator such that the portion of the magnetic field controls the spin transitions of the one or more spin-based qubits of the quantum processor.

Abstract: The object is to provide a technology for enabling reduction of adhesion of a bonding material to a particular electrode. A semiconductor device includes: a semiconductor element with a surface including a first electrode and a second electrode; a protective film formed on the surface of the semiconductor element and having insulating properties, the protective film exposing the first electrode and the second electrode; a metal lead electrode bonded to the first electrode exposed from the protective film; and a bonding material with which the first electrode exposed from the protective film is bonded to the metal lead electrode. The metal lead electrode includes an abutment portion being a protrusion abutting the protective film and blocking between the bonding material and the second electrode in a cross-sectional view.

Abstract: A semiconductor device with a novel structure is provided. The semiconductor device includes a first electrode, a transistor including a back gate, a capacitor including a pair of electrodes, and a first insulator that can have ferroelectricity between the back gate of the transistor and a semiconductor. The first insulator overlaps with the semiconductor with a second insulator therebetween. One of a source electrode and a drain of the transistor is electrically connected to the first electrode. The other of the source and the drain of the transistor is electrically connected to one electrode of the pair of electrodes. The pair of electrodes are each in contact with the first insulator and include a region where the pair of electrodes overlap with each other with the first insulator therebetween. As the first insulator, a ferroelectric is used.

Abstract: Disclosed is a chip-on-film package capable of preventing damage to a surface thereof. The chip-on-film package includes a flexible base film, a first metal wiring layer formed on a first surface of the base film, a first surface insulating layer formed on the first metal wiring layer, a semiconductor chip connected to the first metal wiring layer through an opening formed in the first surface insulating layer, and a spacer formed on the first surface insulating layer within a target area, which is an area within which the first surface insulating layer and a structure of a display panel contact each other. At least one groove is formed in the first surface insulating layer within the target area, and the spacer includes a first spacer filled in the groove.