Abstract: Narrow-optical linewidth laser generation devices and methods for generating a narrow-optical linewidth laser beam are provided. One narrow-optical linewidth laser generation devie includes a single-wavelength mirror or multiwavelength mirror (for comb lasers) formed from one or more optical ring resonators coupled with an optical splitter. The optical splitter may in turn be coupled with a quantum dot optical amplifier (QDOA), itself coupled with a phase-tuner. The phase tuner may be further coupled with a broadband mirror. The narrow-optical linewidth laser beam is generated by using a long laser cavity and additionally by using an integrated optical feedback.

Abstract: A transmitter unit for emitting radiation into the surrounding area, including at least one semiconductor laser, which has at least one first emitter possessing a first section and a second section; and at least one control unit for controlling the semiconductor laser. The control unit is configured to apply a first supply variable to the first section of the at least one emitter, and to apply a second supply variable differing from the first supply variable, to the second section of the at least one emitter.

Abstract: A laser device (100), being configured for generating laser pulses by Ken lens based mode locking, comprises a laser resonator (10) with a plurality of resonator mirrors (11.1, 11.2, 11.

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where ?15<x<?1 and 1<x<15 degrees.

Abstract: A cooling device (1) for cooling an electrical component (4), in particular a laser diode, including a base body (2) with at least one outer face (20) and at least one integrated cooling channel (5), in particular a micro-cooling channel, a connecting surface (21) on the outer face (20) of the base body (2) for connecting the electrical component (4) to the base body (2) and a first stabilising layer (11), wherein the first stabilising layer (11) and the connecting surface (21) are arranged at least partially one above the other along a primary direction (P), and wherein the first stabilising layer (11) is offset relative to the outer face (20) towards the interior of the base body (2) by a distance (A) along a direction parallel to the primary direction (P).

Abstract: A laser is disclosed having a housing formed of a block of glass-ceramic. The block is machined (or otherwise formed) to define one or more channels that act as a waveguide in two dimensions for light within the laser resonator. The channels extend between cavities also formed within the block which retain optical components of the laser, e.g. one or more of the gain medium, cavity mirrors, intermediate reflectors etc. The positioning, shape and size of each cavity is bespoke for the optical component it holds in order that each optical component is retained in optical alignment rigidly against the sides of the cavity.

Abstract: A distributed feedback (DFB) laser array includes a substrate, a semiconductor stacked structure, a first electrode layer, and a second electrode layer. The semiconductor stacked structure is formed above a surface of the substrate and includes two light-emitting modules and a tunnel junction. Each light-emitting module of the two light-emitting modules includes an active layer, a first cladding layer, and a second cladding layer. The active layer is installed between the first cladding layer and the second cladding layer, and the active layer has multiple lasing spots along a first direction, wherein the multiple lasing spots are used for generating multiple lasers. The tunnel junction is installed between the two light-emitting modules. The first electrode layer is formed above the semiconductor stacked structure. The second electrode layer is formed above another surface of the substrate.

Abstract: A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.

Abstract: A rare earth-doped optical fiber comprises a fluorosilicate core surrounded by a silica cladding, where the fluorosilicate core comprises an alkaline-earth fluoro-alumino-silicate glass, such as a strontium fluoro-alumino-silicate glass. The rare earth-doped optical fiber may be useful as a high-power fiber laser and/or fiber amplifier. A method of making a rare earth-doped optical fiber comprises: inserting a powder mixture comprising YbF3, SrF2, and Al2O3 into a silica tube; after inserting the powder mixture, heating the silica tube to a temperature of at least about 2000° C., some or all of the powder mixture undergoing melting; drawing the silica tube to obtain a reduced-diameter fiber; and cooling the reduced-diameter fiber. Thus, a rare earth-doped optical fiber comprising a fluorosilicate core surrounded by a silica cladding is formed.

Abstract: Described herein are methods for developing and maintaining pulses that are produced from compact resonant cavities using one or more Q-switches and maintaining the output parameters of these pulses created during repetitive pulsed operation. The deterministic control of the evolution of a Q-switched laser pulse is complicated due to dynamic laser cavity feedback effects and unpredictable environmental inputs. Laser pulse shape control in a compact laser cavity (e.g., length/speed of light <˜1 ns) is especially difficult because closed loop control becomes impossible due to causality. Because various issues cause laser output of these compact resonator cavities to drift over time, described herein are further methods for automatically maintaining those output parameters.

Abstract: An optical device may include an emitter array including a plurality of emitter groups. Each emitter group may be independently addressable from other emitter groups, of the plurality of emitter groups, for independently lasing. Emitters of the plurality of emitter groups may be interspersed within the emitter array such that a minimum emitter-to-emitter distance within the emitter array is less than a minimum emitter-to-emitter distance within any of the emitter groups.

Abstract: The present disclosure relates to an approach for monitoring the output power of a VCSEL or VCSEL array in a relatively compact, low profile package. A VCSEL device or VCSEL package of the present disclosure may generally be configured with a photodiode for monitoring output power of one or more VCSELs. In some embodiments, one or more VCSEL devices may be arranged over or on a photodetector, such that the photodetector is configured to detect light emitted through a bottom of the VCSEL. In such embodiments, the VCSEL device may have a patterned bottom metal layer and/or an etched substrate to allow light to pass below or behind the VCSEL to the photodiode. In other embodiments, a photodetector may be arranged on a submount adjacent one or more VCSELs, and may be configured to detect light reflected via a diffuser in order to monitor output power.

Abstract: A method for manufacturing an optical semiconductor device having a ridge stripe configuration containing an active layer and current blocking layers which embed both sides of the ridge stripe configuration, comprises steps of forming a mask of an insulating film on a surface of a semiconductor layer containing an active layer, forming a ridge stripe configuration by etching a semiconductor layer using gas containing SiCl4, removing an oxide layer with regard to a Si based residue which is attached on a surface which is etched of the ridge stripe configuration which is formed and removing a Si based residue whose oxide layer is removed.

Abstract: An all-fiber airtight packaging structure with semiconductor saturable absorber mirror includes a ceramic optical fiber ferrule connector, a SESAM, a SESAM fixed block, a TEC chilling plate, a sealing shell, and a cover plate. The cover plate seals the sealing shell by connecting to a sealing shell surface. The TEC chilling plate and the SESAM fixed block are set in the sealing shell. The SESAM fixed block is located above the TEC chilling plate. The SESAM is pasted on the SESAM fixed block. A sealing shell central hole is defined in the sealing shell. The ceramic optical fiber ferrule connector is entered into the sealing shell through the sealing shell central hole, and an output end of ceramic optical fiber ferrule connector is opposited to an end of SESAM which is mounted on the SESAM fixed block.

Abstract: A wavelength selection method for a tunable laser includes: obtaining a target wavelength; and calculating target resistance values of two thermistors, respectively, corresponding to the target wavelength. Each of the two thermistors is used to monitor the temperature of a corresponding one of two wavelength selection components. Each of the target resistance values is calculated according to a relationship between a wavelength drift and a resistance change of the corresponding thermistor and according to an initial wavelength and an initial resistance value of the corresponding thermistor corresponding to the initial wavelength. The method further includes: heating the two wavelength selection components to control their temperatures until real-time resistance values of the two thermistors reach the target resistance values, respectively; and stabilizing the real-time resistance values at the target resistance values and outputting a laser beam having the target wavelength.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a mesa structure disposed on a substrate. The mesa structure includes a first reflector, a second reflector, and an active cavity material structure disposed between the first and second reflectors. The second reflector has an opening extending from a second surface of the second reflector into the second reflector by a predetermined depth. Etching into the second reflector to the predetermined depth reduces the photon lifetime and the threshold gain of the VCSEL, while increasing the modulation bandwidth and maintaining the high reflectivity of the second reflector. Thus, etching the second reflector to the predetermined depth provides an improvement in overshoot control, broader modulation bandwidth, and faster pulsing of the VCSEL such that the VCSEL may provide a high speed, high bandwidth signal with controlled overshoot.

Abstract: A non-reciprocal optical assembly for injection locking a laser to a resonator is described. The laser emits a light beam, and the resonator receives the light beam and returns a feedback light beam to the laser such that the feedback light beam causes injection locking. The non-reciprocal optical assembly is interposed between and optically coupled to the laser and the resonator. The non-reciprocal optical assembly includes a first port that receives the light beam from the laser, and a second port that outputs the light beam to the resonator and receives the feedback light beam from the resonator. The first port also outputs the feedback light beam to the laser. The light beam passes through the non-reciprocal optical assembly with a first power loss, and the feedback light beam passes through the non-reciprocal optical assembly with a second power loss (the first power loss differs from the second power loss).

Abstract: A semiconductor optical device includes: a laser for emitting light; a modulator for modulating the light using an electroabsorption effect; a chip capacitor that is electrically connected in parallel to the laser; a chip inductor that is electrically connected in series to the chip capacitor, is electrically connected in series to the laser and the chip capacitor as a whole, and includes a first terminal and a second terminal; a solder or a conductive adhesive that directly bonds the first terminal of the chip inductor and the chip capacitor to each other; an electrical wiring group in which the laser, the modulator, the chip capacitor, and the chip inductor are electrically connected to each other; and a substrate on which the laser, the modulator, the chip capacitor, and the chip inductor are mounted.

Abstract: An optical package having a patterned submount, an optoelectronic device mounted to the patterned submount, a spacer affixed on one side to the patterned submount, the spacer having a bore hole therethrough wherein the optoelectronic device is positioned, and an optical element affixed to the spacer on a side opposite the patterned submount and covering the spacer bore hole. The patterned submount may be a circuit board. The optoelectronic device may be a VCSEL. The spacer may be affixed to the circuit board, for example, using an epoxy preform or an adhesive laminate. The spacer may, for example, be manufactured from a sheet of stainless steel or from a circuit board. The optical element may be, for example, a diffuser, a concave lens, a convex lens, a holographic element, polarizers, or diffraction gratings. The optical element may be affixed to the spacer using an epoxy preform or an adhesive laminate.

Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.