Abstract: A tunable laser device based on silicon photonics includes a substrate configured with a patterned region comprising one or more vertical stoppers, an edge stopper facing a first direction, a first alignment feature structure formed in the patterned region along the first direction, and a bond pad disposed between the vertical stoppers. Additionally, the tunable laser includes an integrated coupler built in the substrate located at the edge stopper and a laser diode chip including a gain region covered by a P-type electrode and a second alignment feature structure formed beyond the P-type electrode. The laser diode chip is flipped to rest against the one or more vertical stoppers with the P-type electrode attached to the bond pad and the gain region coupled to the integrated coupler. Moreover, the tunable laser includes a tuning filter fabricated in the substrate and coupled via a wire waveguide to the integrated coupler.

Abstract: An arrangement monitors an optical element. The arrangement includes: a light source configured to emit radiation onto a surface of the optical element; a detector configured to detect the radiation that has been at least partially reflected at the surface of the optical element; and a holder for the optical element, in which the light source and the detector are integrated. The holder has a cooling region through which a cooling liquid is configured to flow, the cooling region being in contact with the optical element. The holder has a reservoir, through which a beam path between the light source and the detector extends. The reservoir is configured to receive the cooling liquid leaking out at the optical element in case of a leakage.

Abstract: A single longitudinal mode ring Raman laser including: a pump source outputting a pump light power, resonantly coupled to a first ring resonator; a optical measurement and piezo-actuator for stabilising the resonant coupling of the pump light power to a first ring resonator; a first ring resonator including a Raman gain medium, wherein the Raman gain medium receives the pump light power and undergoes Raman lasing generating resonated Stokes power at the corresponding Stokes output wavelength; the first ring resonator acting as a feedback loop for the pump light power and the resonated Stokes power and outputting a portion of the Stokes power as the laser output.

Abstract: In a laser device that emits pulsed laser light by emitting excitation light to a laser medium in a state in which a first voltage is applied to a Q switch and changing the voltage applied to the Q switch from a first voltage to a second voltage after the emission of the excitation light, the application start timing of the first voltage during a normal operation is set to a timing at which the intensity of the pulsed laser light periodically changing due to the vibration of the Q switch is maximized.

Abstract: A corrected mesa structure for a VCSEL device is particularly configured to compensate for variations in the shape of the created oxide aperture that result from anisotropic oxidation. In particular, a corrected mesa shape is derived by determining the shape of an as-created aperture formed by oxidizing a circular mesa structure, and then ascertaining the compensation required to convert the as-created shape into a desired (“target”) shaped aperture opening. The compensation value is then used to modify the shape of the mesa itself such that a following anisotropic oxidation yields a target-shaped oxide aperture.

Abstract: A GaN-based VCSEL chip based on porous DBR and a manufacturing method of the same, wherein the chip includes: a substrate; a buffer layer formed on the substrate; a bottom porous DBR layer formed on the buffer layer; an n-type doped GaN layer formed on the bottom porous DBR layer, which is etched downward on its periphery to form a mesa; an active layer formed on the n-type doped GaN layer; an electron blocking layer formed on the active layer; a p-type doped GaN layer formed on the electron blocking layer; a current limiting layer formed on the p-type doped GaN layer with a current window formed at a center thereof, wherein the current limiting layer covers sidewalls of the active layer, the electron blocking layer and the convex portion of the n-type doped GaN layer; a transparent electrode formed on the p-type doped GaN layer; an n-electrode formed on the mesa of the n-type doped GaN layer; a p-electrode formed on the transparent electrode with a recess formed therein; and a dielectric DBR layer formed on

Abstract: A miniature illuminator is described which is suitable for assembly into mobile electronics devices such as cell phones and computer tablets. Features of the invention overcome the complexity of current miniature illuminators by using single molded structure which includes all the electrical feedthrough connections and has the features necessary for accurate mounting of optical components. The molded structure includes laser safety connections which provide an electrical interrupt signal when the illuminator is damaged in a way that could result in propagation of non-eye safe illuminator beams. In an alternate operation the illuminator provides a signal when a subject gets too close to the illuminator and would receive unsafe VCSEL illuminator beam. The laser safety feature is integrated into the molded Illuminator package so that separate electrically connected structures to achieve this function are eliminated.

Abstract: A wafer may comprise a substrate layer and a plurality of vertical cavity surface emitting lasers (VCSELs) formed on or within the substrate layer. A respective trench-to-trench distance associated with the plurality of VCSELs may vary across the wafer based on a predicted variation of an oxidation rate of an oxidation layer across the wafer.

Abstract: A laser arrangement includes a laser array, and an optical arrangement. The laser array includes lasers in a first pattern emitting a same laser emission profile around a first optical axis with a divergence angle ?/2. The optical arrangement has a diffusor with an array of optical elements in a second pattern, with a second optical axis, and with an illumination pattern along a first illumination axis in a field-of-view if laser light is received within a defined range smaller than or equal to a range of angles between ?/+? with respect to the second optical axis. A row of lasers parallel to the first illumination axis has a pitch p. A row of m optical elements is parallel to the first axis. Each optical element has a diameter L, and contacts its neighbor. The n lasers and the m optical elements satisfy n*p=m*L with a deviation smaller than +/?5%.

Abstract: Gallium and nitrogen containing optical devices operable as laser diodes and methods of forming the same are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length, a dimension of less than 150 microns characterizing the width of the chip. The devices have a cavity oriented substantially parallel to the length of the chip.

Abstract: A photonic integrated circuit device includes a passive waveguide section formed over a substrate, a quantum cascade laser (QCL) gain section formed over the substrate and adjacent to the passive waveguide section, and a taper section disposed between and in contact with each of the passive waveguide section and the QCL gain section. In some embodiments, the passive waveguide section includes a passive waveguide core layer disposed between a first cladding layer and a second cladding layer. In some examples, the QCL gain section includes a QCL active region disposed between a first confinement layer and a second confinement layer, where the QCL active region has a lower index of refraction than each of the first and second confinement layers. In some embodiments, the taper section is configured to optically couple the QCL gain section to the passive waveguide section.

Abstract: Embodiments described herein provide a layered structure that comprises a substrate that includes a first porous multilayer of a first porosity, an active quantum well capping layer epitaxially grown over the first porous multilayer, and a second porous multilayer of the first porosity over the active quantum well capping layer, where the second porous multilayer aligns with the first porous multilayer.

Abstract: Surface-emitting laser devices and light-emitting devices including the same are provided. A surface-emitting laser device can include: a first reflective layer and a second reflective layer; and an active region disposed between the first reflective layer and the second reflective layer, wherein the first reflective layer includes a first group first reflective layer and a second group first reflective layer, and the second reflective layer includes a first group second reflective layer and a second group second reflective layer.

Abstract: A surface-mountable electrical device, an assembly including the surface-mountable electrical device, and a method for producing the surface-mountable electrical device is provided. The surface-mountable electrical device includes at least one electrical component which is a semiconductor component and which is intended for generating radiation, a control circuit for pulsed operation of the component, and a capacitor which is connected to the component electrically in series and which is configured for the pulsed energization of the component. The surface-mountable electrical device further includes a lead frame assembly having a plurality of different lead frames as a mounting platform for the component, the capacitor and the control circuit, wherein at least one of the different lead frames of the lead frame assembly is thinner than a further lead frame of the different lead frames and the lead frame assembly lies only partially in a mounting side of the device.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a mesa structure disposed on a substrate. The mesa structure has a first reflector, a second reflector, and an active cavity material structure disposed between the first and second reflectors. The mesa structure defines an optical window through which the VCSEL is configured to emit light. The mesa structure further includes a passivation layer disposed at least within the optical window. The passivation layer is designed to seal the mesa structure to reduce the humidity sensitivity of the VCSEL and to protect the VCSEL from contaminants. The passivation layer also provides an improvement in overshoot control, broader modulation bandwidth, and faster pulsing of the VCSEL such that the VCSEL may provide a high speed, high bandwidth signal with controlled overshoot and dumping behavior.

Abstract: This invention provides a current self-checking regulation circuit based on voltage calibration including a bandgap reference unit, a self-calibration unit, a detection and regulation unit, current mirror units, and a current mirror control unit. The bandgap reference unit is configured to generate a voltage signal, the self-calibration unit is configured to respond to a digital signal of the detection and regulation unit and calibrate the voltage signal of the bandgap reference unit. The detection and regulation unit samples the reference current signal and a mirror current signal of the regulation group current mirror unit and generate a digital control signal according to the reference current signal. and the reference group current mirror unit responds to the digital control signal and outputs a regulated bias current signal meeting needs of the laser driver.

Abstract: Techniques for producing a Brillouin laser are provided. According to some aspects, techniques are based on forward Brillouin scattering and a multimode acousto-optic waveguide in which light is scattered between optical modes of the waveguide via the Brillouin scattering. This process may transfer energy from a waveguide mode of pump light to a waveguide mode of Stokes light. This process may be referred to herein as Stimulated Inter-Modal Brillouin Scattering (SIMS). Since SIMS is based on forward Brillouin scattering, laser (Stokes) light may be output in a different direction than back toward the input pump light, and as such there is no need for a circulator or other non-reciprocal device to protect the pump light as in conventional devices.

Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.

Abstract: A laser device has a photonic crystal surface emitting laser (PCSEL) element. At a first lateral side of the PCSEL element, a reflector is arranged to reflect back into the PCSEL element at least a portion of light travelling out of the PCSEL element through the first lateral side of the PCSEL element. Between the first lateral side of the PCSEL element and the reflector there is interposed an electrically controllable light-transmission region configured to control the transmission of light from the PCSEL element to the reflector, based on an electrical input. Also disclosed is a method of operation of a corresponding laser device.

Abstract: An ultrafast electro-optic laser makes a stabilized comb and includes: a comb generator that produces a frequency comb; a dielectric resonant oscillator; a phase modulator in communication with the dielectric resonant oscillator; an intensity modulator in communication with the phase modulator; an optical tailor in communication with the comb generator and that produces tailored light; a filter cavity in communication with the intensity modulator; a pulse shaper in communication with the filter cavity; a highly nonlinear fiber and compressor in communication with the pulse shaper; an interferometer in communication with the optical tailor and that produces a difference frequency from the tailored light; and an electrical stabilizer in communication with the interferometer and the comb generator and that produces the stabilization signal with a stabilized local oscillator cavity that produces a stabilized local oscillator signal that is converted into the stabilization signal and communicated to the dielectric