Abstract: According to an aspect of the present disclosure, a light emitting display device includes a substrate defined by a plurality of sub-pixels and a first overcoating layer disposed on the substrate, a connection electrode and a sacrificial layer disposed on the first overcoating layer, a first electrode disposed on the connection electrode, a second overcoating layer disposed on the sacrificial layer and including an opening that exposes a portion of the first electrode, a dummy first electrode disposed on a top surface of the second overcoating layer and a side surface of the opening and separated from the first electrode, a bank layer covering the dummy first electrode and a portion of the first electrode, and an emission layer and a second electrode disposed on the first electrode and the bank layer.

Abstract: A semiconductor package includes a redistribution substrate including a first redistribution layer, a first molding member on the redistribution substrate, a second redistribution layer on an upper surface of the first molding member and having a redistribution pad, an electrical connection pad on an upper surface of a second molding member and electrically connected to the second redistribution layer, and a passivation layer on the second molding member and having an opening exposing at least a portion of the electrical connection pad. The electrical connection pad includes a conductor layer, including a first metal, and a contact layer on the conductor layer and including a second metal. The redistribution pad includes a third metal, different from the first metal and the second metal. The portion of the electrical connection pad, exposed by the opening, has a width greater than a width of the redistribution pad.

Abstract: A display device includes: in a display area, a first transistor including a first gate electrode; a second transistor electrically connected to the first transistor, including a second gate electrode; a light-emitting element; and in a peripheral area surrounding the display area, a power wiring including: first and second power wiring patterns spaced apart from each other; and a bridge pattern connecting the first and second power wiring patterns; a signal wiring; and an insulating layer covering the power wiring and the signal wiring, and a part of the insulating layer is removed to form an organic layer-removed area, the bridge pattern overlapping the organic layer-removed area, the power wiring and the signal wiring overlap each other in the organic layer-removed area, the signal wiring and the bridge pattern are disposed in a same layers as the first gate electrode and the second gate electrode, respectively.

Abstract: A display apparatus includes: a base substrate; a thin film transistor disposed on the base substrate and including an active pattern; an insulating layer disposed on the active pattern of the thin film transistor; a connection electrode disposed on the insulating layer, and electrically connected to the thin film transistor, wherein the connection electrode includes a curved wiring portion; a first via insulating layer covering the connection electrode; a first electrode disposed on the first via insulating layer; a light emitting layer disposed on the first electrode and at least partially overlapping the connection electrode; and a second electrode disposed on the light emitting layer.

Abstract: Disclosed herein are methods for forming MOSFETs. In some embodiments, a method may include providing a device structure including a plurality of trenches, forming a gate spacer layer over the device structure, and removing the gate spacer layer from a top surface of the device structure and from a first section of each of the plurality of trenches, wherein a portion of the gate spacer layer remains along a second section of each of the plurality of trenches. The method may further include forming a gate oxide layer along the first section of each of the plurality of trenches and along the portion of the gate spacer layer.

Abstract: Provided is a display substrate, a preparation method thereof and a display apparatus. The display substrate includes a base substrate, which has a display area and an encapsulation area, the encapsulation area surrounds the display area, and a hydrophobic structure is arranged on the encapsulation area.

Abstract: A package structure and method of forming the same are provided. The package structure includes a semiconductor unit, a package component and an underfill layer. The semiconductor structure unit includes a first semiconductor structure and a second semiconductor structure disposed as side by side, and an isolation region laterally between the first semiconductor structure and the second semiconductor structure. The isolation region vertically extends from a top surface to a bottom surface of the semiconductor structure unit. The semiconductor structure unit is disposed on and electrically connected to the package component. The underfill layer is disposed to fill a space between the semiconductor structure unit and the package component.

Abstract: Packages and packaging techniques are described in which a patterned carrier substrate can be used to create a reconstituted fanout substrate with a topography that can accommodate components of different thicknesses. In an embodiment, a wiring layer is formed directly on a multiple level topography of a molding compound layer including embedded components.

Abstract: A semiconductor package includes a first package component comprising: a first semiconductor die; a first encapsulant around the first semiconductor die; and a first redistribution structure electrically connected to the semiconductor die. The semiconductor package further includes a second package component bonded to the first package component, wherein the second package component comprises a second semiconductor die; a heat spreader between the first semiconductor die and the second package component; and a second encapsulant between the first package component and the second package component, wherein the second encapsulant has a lower thermal conductivity than the heat spreader.

Abstract: The present disclosure relates to a Gallium-Nitride (GaN) based module, which includes a module substrate, a thinned switch die residing over the module substrate, a first mold compound, and a second mold compound. The thinned switch die includes an electrode region, a number of switch interconnects extending from a bottom surface of the electrode region to the module substrate, an aluminium gallium nitride (AlGaN) barrier layer over a top surface of the electrode region, a GaN buffer layer over the AlGaN barrier layer, and a lateral two-dimensional electron gas (2DEG) layer realized at a heterojunction of the AlGaN barrier layer and the GaN buffer layer. The first mold compound resides over the module substrate, surrounds the thinned switch die, and extends above a top surface of the thinned switch die to form an opening over the top surface of the thinned switch die. The second mold compound fills the opening.

Abstract: A routing structure is disclosed. A first wiring line coupled to a programming access device and a routing block driver and receiver enabling device and a second wiring line coupled to a programming access device and a routing block driver and receiver enabling device. An insulator-metal-transistor device that includes a top electrode, a middle electrode and a bottom electrode, coupled at the intersection of the first wiring line and the second wiring line.

Abstract: The present disclosure provides a pixel structure, a display panel and a display apparatus. The pixel structure according to an embodiment of the present disclosure includes a pixel structure including: a plurality of pixel units. Each of the plurality of pixel units includes a plurality of sub-pixels, each of the plurality of sub-pixels is divided into at least two target sub-pixels, and a separation region is provided between two adjacent target sub-pixels.

Abstract: A semiconductor package comprises a package substrate, a semiconductor chip on the package substrate, and an interposer substrate on the semiconductor chip. The interposer substrate comprises a first surface facing the semiconductor chip and a trench in the first surface, the trench vertically overlapping the semiconductor chip. An insulating filler is provided between the semiconductor chip and the interposer substrate, and at least partially fills the trench of the interposer substrate.

Abstract: A semiconductor package includes an upper substrate having a first surface and a second surface which are opposite to each other, a lower semiconductor chip disposed on the first surface of the upper substrate, a plurality of conductive pillars disposed on the first surface of the upper substrate at at least one side of the lower semiconductor chip, and an upper semiconductor chip disposed on the second surface of the upper substrate. The lower semiconductor chip and the plurality of conductive pillars are connected to the first surface of the upper substrate, and the upper semiconductor chip is connected to the second surface of the upper substrate.

Abstract: At least one polymer material may be employed to facilitate bonding between the semiconductor dies. Plasma treatment, formation of a blended polymer, or formation of polymer hairs may be employed to enhance bonding. Alternatively, air gaps can be formed by subsequently removing the polymer material to reduce capacitive coupling between adjacent bonding pads.

Abstract: The resent disclosure provides an OLED substrate, a photo mask, and a method of manufacturing the OLED substrate. In one embodiment, an OLED substrate includes: a base substrate; an anode layer on the base substrate; a pixel defining layer on the anode layer, the pixel defining layer having a pattern opening area, the pattern opening area including a plurality of pixel openings arranged in an array manner; and a light-emitting layer formed on the pixel defining layer by evaporation; wherein the pattern opening area has an inward contraction structure with respect to a regular pixel opening area structure in which a plurality of pixel openings are arranged in a manner of an regular array where rows in the regular array are equally spaced from each other and are parallel to each other and columns in the regular array are equally spaced from each other and are parallel to each other.

Abstract: One or more stud bumps may form a conductive column to a component having back side metallization. In an embodiment, the column of stud bumps may be about 130 um vertically (Z-direction). Providing a microelectronics package with a column of stud bumps electrically connected to a component having back side metallization may provide a cost effective electrical interconnect and may enable the incorporation of components of different thicknesses, including that the component thicknesses are independent of each other, in a single fanout package, while providing a thin package profile and back side surface finish integration.

Abstract: A semiconductor package includes a first substrate including a first recess formed in a top surface of the first substrate, a first semiconductor chip disposed in the first recess and mounted on the first substrate, an interposer substrate disposed on the first semiconductor chip and including a second recess formed in a bottom surface of the interposer substrate, an adhesive layer disposed in the second recess and in contact with a top surface of the first semiconductor chip, a plurality of connection terminals spaced apart from the first recess and connecting the first substrate to the interposer substrate, and a molding layer disposed between the first substrate and the interposer substrate.

Abstract: An embodiment package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, and a conductive line electrically connecting a first conductive via to a second conductive via. The conductive line includes a first segment over the first integrated circuit die and having a first lengthwise dimension extending in a first direction and a second segment having a second lengthwise dimension extending in a second direction different than the first direction. The second segment extends over a boundary between the first integrated circuit die and the encapsulant.

Abstract: The disclosure discloses an array substrate, a display panel, and a display device. A first power signal line is configured to be formed by electrically connecting a first signal line located in a first source-drain metal layer and a second signal line located in a second source-drain metal layer through a via hole, which is equivalent to that the first power signal line is composed of the first signal line and the second signal line connected in parallel, and the equivalent resistance of the parallel-connected first signal line and second signal line included in the first power signal line is smaller than the resistance of any of the signal lines. Thus, the resistance of the first power signal line may be effectively reduced, so that an IR drop of a display panel with an array substrate may be reduced, and the display uniformity of the display panel is improved.