Abstract: In one embodiment, an apparatus includes a clock generator circuit to receive a first clock signal at a first frequency and output a second clock signal at a second frequency less than the first clock frequency. The clock generator circuit may include: a divider circuit to divide the first clock signal to obtain at least a first divided clock signal and a second divided clock signal; and a gating circuit coupled to the divider circuit, the gating circuit to gate the first clock signal with at least one of the first divided clock signal and the second divided clock signal to output the second clock signal.

Abstract: According to certain aspects, a chip includes a pad, a power amplifier, a transformer coupled between an output of the power amplifier and the pad, a transistor coupled between the transformer and a ground, and a first clamp circuit coupled between a gate of the transistor and a drain of the transistor.

Abstract: An amplifier circuit includes: a transistor provided between an input terminal and an output terminal and having a gate connected to the input terminal, a source connected to a ground, and a drain connected to the output terminal; an inductor connected between the source and the ground; an inductor connected between the gate and the input terminal, and switches connected to at least one of the inductors and configured to change a mutual inductance of the inductors.

Abstract: A distortion compensation device includes: a first predistorter configured to compensate for a distortion in an amplifier; and a second predistorter configured to compensate for the distortion in the amplifier, and update distortion compensation characteristics at a higher frequency than that of the first predistorter.

Abstract: A push-push frequency doubler based on complementary transistors is provided. The first differential amplifier circuit receives a differential input signal having an initial frequency, and amplifies the amplitude of the second harmonic of the differential input signal to obtain a first signal. The second differential amplifier circuit receives the differential input signal with the initial frequency and amplifies the amplitude of the second harmonic of the differential input signal to obtain the second signal. Where, the first signal and the second signal are a set of differential signals with the same amplitude and a phase difference of 180°. The output load circuit extracts the second harmonic signal in the first and second signal respectively to obtain and output a pair of differential output signal with first output frequency whose value is twice of the initial frequency. As a result, the frequency doubler with differential output signal is realized.

Abstract: Various examples are directed to amplifier circuits and methods for operating amplifier circuits. The amplifier circuit may comprise a first amplifier stage. The first amplifier stage comprises a first amplifier, a first feedback resistance, a second amplifier, a second feedback resistance, and a gain resistance. A first current source may be electrically coupled to provide a first current across the gain resistance in a first direction. A second current source may be electrically coupled to provide a second current across the gain resistance in a second direction opposite to the first direction.

Abstract: An envelope tracking (ET) radio frequency (RF) front-end circuit is provided. The ET RF front-end circuit includes an ET integrated circuit(s) (ETIC(s)), a local transceiver circuit, a target voltage circuit(s), and a number of power amplifiers. The local transceiver circuit receives an input signal(s) from a coupled baseband transceiver and generates a number of RF signals. The target voltage circuit(s) generates a time-variant ET target voltage(s) based on the input signal(s). The ETIC(s) generates multiple ET voltages based on the time-variant ET target voltage(s). The power amplifiers amplify the RF signals based on the ET voltages. Given that the time-variant ET target voltage(s) is generated inside the self-contained ET RF front-end circuit, it is possible to reduce distortion in the time-variant ET target voltage(s), thus helping to improve operating efficiency of the power amplifiers, especially when the RF signals are modulated with a higher modulation bandwidth (e.g., ?200 MHz).

Abstract: A device includes a semiconductor die including a transistor. The transistor includes a plurality of parallel transistor elements. Each transistor element includes a drain region, a source region, and a gate region. The semiconductor die includes a first temperature sensor between a first transistor element in the plurality of transistor elements and a second transistor element in the plurality of transistor elements. The first temperature sensor is configured to generate a first output signal having a magnitude that is proportional to a temperature of the first temperature sensor.

Abstract: Apparatus and methods for true power detection are provided herein. In certain embodiments, a power amplifier system includes an antenna, a directional coupler, and a power amplifier electrically connected to the antenna by way of a through line of the directional coupler. The power amplifier system further includes a first switch, a second switch, and a combiner that combines a first coupled signal received from a first end of the directional coupler's coupled line through the first switch and a second coupled signal received from a second end of the directional coupler's coupled line through the second switch.

Abstract: Systems and apparatuses are disclosed that include an RF generator configured to generate RF signals having a wavelength. Amplifiers are configured to receive and amplify the RF signals from the RF generator and are separated from each other by a separation distance in a range between about 0.2 times the wavelength and about 10.0 times the wavelength. A power management system is configured to control one or more of the amplifiers based on information received that is associated with the RF signals.

Abstract: A front end module (FEM) integrated circuit (IC) architecture that uses the same LNA in each of several frequency bands extending over a wide frequency range. In some embodiments, switched impedance circuits distributed throughout the front end circuit allow selection of the frequency response and impedances that are optimized for particular performance parameters targeted for a desired device characteristic. Such switched impedance circuits tune the output and input impedance match and adjust the gain of the LNA for specific operating frequencies and gain targets. In addition, adjustments to the bias of the LNA can be used to optimize performance trade-offs between the total direct current (DC) power dissipated versus radio frequency (RF) performance. By selecting appropriate impedances throughout the circuit using switched impedance circuits, the LNA can be selectively tuned to operate optimally at a selected bias for operation within selected frequency bands.

Abstract: The present disclosure relates to single-ended-to-differential amplifiers and radio frequency receivers. One example single-ended-to-differential amplifier includes a first inverting amplifier, a second inverting amplifier, and a third inverting amplifier. Both an input end of the first inverting amplifier and an input end of the second inverting amplifier are coupled to an input end of the single-ended-to-differential amplifier, an output end of the first inverting amplifier is coupled to an input end of the third inverting amplifier, an output end of the second inverting amplifier is coupled to a first output end of the single-ended-to-differential amplifier, and an output end of the third inverting amplifier is coupled to a second output end of the single-ended-to-differential amplifier. An impedance element is coupled between the input end of the first inverting amplifier and the output end of the first inverting amplifier.

Abstract: Methods and circuital arrangements for turning OFF branches of a multi-branch cascode amplifier are presented. First and second switching arrangements coupled to a branch allow turning OFF the branch while protecting transistors of the branch from a supply voltage that may be greater than a tolerable voltage of the transistors. The first switching arrangement includes a transistor-based switch that is in series connection with the transistors of the branch. The first switching arrangement drops the supply voltage during the OFF state of the branch and provides a conduction path for a current through the branch during the ON state of the branch. A resistor and a shunting switch are coupled to a gate of the transistor-based switch to reduce parasitic coupling effects of the transistor-based switch upon an RF signal coupled to the branch during the ON state and OFF state of the branch.

Abstract: A switching power amplifier includes logic circuitry that generates first and second components of a differential signal, based on received amplitude code and a delayed version of the same. The amplitude code includes a sign and a magnitude. When the sign is positive, a first logic path is configured to generate the first component based on the received amplitude code and the second logic path is configured to generate the second component based on the delayed amplitude code. When the sign is negative, the first logic path is configured to generate the first component based on the delayed amplitude code and the second logic path is configured to generate the second component based on the received amplitude code. The switching power amplifier further includes a differential-to-single ended conversion circuit configured to generate a single-ended signal based on the differential signal.

Abstract: A power amplifier circuit includes a first transistor disposed on a semiconductor substrate; a second transistor disposed on the semiconductor substrate and configured to supply a bias current based on a first current which is a part of a control current to the first transistor; a third transistor disposed on the semiconductor substrate and having a collector configured to be supplied with a second current which is a part of the control current and an emitter configured to output a third current based on the second current; a first bump electrically connected to an emitter of the first transistor and disposed so as to overlap a first disposition area in which the first transistor is disposed in plan view of the semiconductor substrate; and a second bump disposed so as to overlap a second disposition area in which the third transistor is disposed in the plan view.

Abstract: An active feedback low-noise amplifier includes a feedback transistor whose source couples through a feedback path to an input signal node. A bias transistor biases the source of the feedback transistor with a bias current responsive to an input signal carried on the input signal node.

Abstract: Low noise amplifiers (LNAs) with low noise figure are provided. In certain embodiments, an LNA includes a single-ended LNA stage including an input for receiving a single-ended input signal from an antenna and an output for providing a single-ended amplified signal, a balun for converting the single-ended amplified signal to a differential signal, and a variable gain differential amplification stage for amplifying the differential signal from the balun. Implementing the LNA in this manner provides low noise figure, high gain, flexibility in controlling gain, and less sensitivity to ground/supply impedance.

Abstract: An envelope tracking (ET) power amplifier apparatus is provided. The ET power amplifier apparatus includes an amplifier circuit configured to amplify a radio frequency (RF) signal based on an ET voltage and a tracker circuit configured to generate the ET voltage based on an ET target voltage. The ET power amplifier apparatus also includes a control circuit. The control circuit is configured to dynamically determine a voltage standing wave ratio (VSWR) change at a voltage output relative to a nominal VSWR and cause an adjustment to the ET voltage. By dynamically determining the VSWR change and adjusting the ET voltage in response to the VSWR change, the amplifier circuit can operate under a required EVM threshold across all phase angles of the RF signal.

Abstract: A signal receiver includes a data sampler receiving a differential input signal having first and second input signals and determining bit values of the differential input signal based on first and second reference voltages, and a reference voltage generator performing a pre-tuning operation and a post-tuning operation to generate the reference voltages. The reference voltage generator performs the pre-tuning operation by generating first and second initial voltages and adjusting one of the initial voltages to generate third and fourth voltages. After the pre-tuning operation, the reference voltage generator performs the post-tuning operation by increasing or decreasing the third voltage to generate the first reference voltage and decreasing or increasing the fourth voltage to generate the second reference voltage based on a comparison result between the third voltage and the first input signal and a second comparison result between the fourth voltage and second input signal.

Abstract: A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs). Cascode circuits, each having a “common source” configured input FET and a “common gate” configured output FET, serve as the LNAs. An amplifier-branch control switch, configured to withstand relatively high voltage differentials by means of a relatively thick gate oxide layer and coupled between a terminal of the output FET and a power supply, controls the ON and OFF state of each LNA while enabling use of a relatively thin gate oxide layer for the output FETs, thus improving LNA performance. Some embodiments may include a split cascode amplifier and/or a power amplifier.