Abstract: A rotary tube reactor, having at least one treatment line composed of tubes whose individual sections have gas chambers which are sealed from each other and wherein each section has a gas outlet and adjacent sections are joined together by material passages, is used for thermal treatment. In accordance with the invention, the reactor is used for the thermal treatment of carbon containing materials, the production of activated carbon, the activation of zeolite granules, the production of pyrophorous metals in the form of powder to lumpy solid materials and substances in liquid form with the evolution of gas.

Abstract: An apparatus useful for double crucible Czochralski crystal growth comprises an inner crucible fixed within an outer crucible wherein the inner crucible contains an extra volume or reservoir of semiconductor melt when flow of semiconductor melt from the outer crucible into the inner crucible through means interconnecting the crucibles ceases.

Abstract: A Czochralski-type crystal growing apparatus (10) supports a crystal (12) with respect to a melt (14) by a plurality of flexible cables (41, 42 and 43). The supporting lengths of the cables are radially offset in a horizontal plane from a vertical central axis (29) about which the growing crystal (12) is rotated with respect to the melt (14). Because of their radially offset position, the cables have the capacity to oppose a torque which is typically generated by the relative rotation of the crystal with respect to the melt. The supporting cables (41, 42 and 43) also impart increased orientational stability to a lower support bracket (26) which holds the crystal (12) relative to the melt (14).

Abstract: Spray dried products exhibiting improved dispersibility in solvent medium are obtained from a highly porous foraminous mat. The mat is comprised of a multiplicity of spheroidal dry particles bonded or fused together in an aggregate form. The fused particles of the mat are structurally arranged to provide a multiplicity of communicating pores and channels extending through the mat permitting the flow of a gas through the mat. The mat can be subdivided into pieces of the required size or reduced to a fine powder, if desired.

Abstract: A method of growing single crystals of beta SiC from solution using molten lithium as a solvent for polycrystalline SiC feed material. Reasonable growth rates are accomplished at temperatures in the range of about 1330.degree. C. to about 1500.degree. C.

Abstract: Process for the preparation of alpha mercuric iodide monocrystals by growth in solution, wherein an alpha mercuric iodide solution in an organic sulphoxide is used and wherein growth is brought about on a nucleus located in a cavity able to block the growth defects of the monocrystal.The invention also relates to the alpha mercuric iodide monocrystals with octahedral-pinacoid habits obtained.

Abstract: A method for performing successive mass production of identical semiconductor devices each having a multi-layer structure consisting of a plurality of epitaxial layers successively deposited on a substrate without requiring, for each deposition, any steps of cooling and re-heating a boat provided with a plurality of wells each containing a solution therein. An upper portion of each well is maintained at a predetermined temperature higher than that of a lower portion of the well which communicates with the upper portion so as to establish a constant temperature difference between the upper portion and the lower portion during the deposition of the epitaxial layers. A semiconductive solute material is soaked in the solution contained in the well to maintain the solution at a saturated concentration in the upper portion of the well and at a supersaturated concentration in the lower portion thereof.

Abstract: A method of producing thin single-crystal sheets is disclosed. A thin single-crystal layer is formed on a substrate, with the material of the layer having a different absorption coefficient for laser radiation than does the material of the substrate at their interface. The laser radiation is focused into a region contiguous to the interface and extending the width of the interface, and is swept across the entire interface region. The energy that is absorbed from the laser radiation in the focus region liquifies material in this region. The layer is progressively separated from the substrate as the laser radiation is swept across the interface, until the entire layer is separated from the substrate. The method is applicable to the production of thin single-crystal sheets of semiconductor material which may be used, for example, in the manufacture of solar cells or integrated circuits.

Abstract: The oxygen content of Czochralski grown silicon rods is characterized by annealing portions of the rods at selected times and temperatures and measuring the resistivity shift which is then related to the oxygen content of that portion of the rod. The rod can be selected for use in unipolar or bipolar device manufacture prior to cutting the rod into wafers.

Abstract: Manufacture of granules built up from a core and an envelope in a fluidized bed of nuclei. A stream of liquid containing the enveloping material is hydraulically sprayed within the bed from the bottom upwards by means of at least one hydraulic sprayer surrounded by a coaxial, annular, converging aperture through which auxiliary gas is discharged at such a vertical velocity that the conical stream of droplets is narrowed to a stream having an apex angle of less than 20.degree., and in such a quantity that a cavity of dilute fluidized phase is formed above each sprayer, which cavity is located entirely within the bed.

Abstract: A thermal reactor apparatus and method of pyrolyticaly decomposing silane gas into liquid silicon product and hydrogen by-product gas is disclosed. The thermal reactor (1) has a reaction chamber (21) which is heated well above the decomposition temperature of silane. An injecter probe (100) introduces the silane gas tangentially into the reaction chamber (21) to form a first, outer, forwardly moving vortex (22) containing the liquid silicon product and a second, inner, rearwardly moving vortex (23) containing the by-product hydrogen gas. The liquid silicon in the first outer vortex (22) deposits onto the interior walls (28) of the reaction chamber (21) to form an equilibrium skull layer (26) which flows to the forward or bottom end of the reaction chamber where it is removed. The by-product hydrogen gas in the second inner vortex (23) is removed from the top or rear of the reaction chamber by a vortex finder (30).

Abstract: Indium phosphide stoichiometry in III-V semiconductor devices is sensitive to processing conditions during liquid phase epitaxy deposition. Disclosed is a method for determining indium-to-phosphorus ratio in an n-type indium phosphide semiconductor surface layer by monitoring photoluminescence at an absorption band at or near 0.99 electron volt.

Abstract: A method or technique is disclosed for predicting precisely where oxygen precipitation will occur in semiconductor wafers that are being processed in connection with integrated circuit manufacture; the technique is based upon the discovery that such precipitation will occur at resistivity peaks measured prior to any thermal treatment of the wafers. In other words, the technique permits characterizing the wafers by the diametral resistivity profile that is obtained in the initial resistivity measurements, whereby a change in oxygen precipitation can be predicted precisely where compensated intrinsic regions have been measured in the initial measurements.

Abstract: Crystalline semiconductor material is produced in strip or sheet form by a gas process. The corresponding amorphous semiconductor is vapour deposited on to a substrate material which is subsequently removed from the amorphous semiconductor. The semiconductor is then selectively heated to induce crystallization. Devices may be fabricated on the crystalline material in tandem with the deposition and crystallization processes.

Abstract: The antibacterial compound DC-38-V is produced by culturing a microorganism belonging to the genus Streptomyces.

Abstract: This invention encompasses methods and reagents for inactivation of bacterial growth inhibitors present in blood, serum or plasma. It has been found that salicylates and closely related compounds will neutralize bacterial growth inhibitors present in the blood of many patients. The addition of salicylate to conventional growth medium also provides a reagent for monitoring the antibiotic levels in blood by enabling measurement of the effect of the antibiotic against a standard test organism without interference from the bacterial growth inhibitor present in sera.

Abstract: A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 5,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of less than 1 .mu.m and a micro Vickers hardness of 3,500 kg/mm.sup.2 under a load of 100 g, and an amorphous silicon nitride having a micro Vickers hardness of 2,200 kg/mm.sup.2 under a load of 100 g, and is produced by blowing a nitrogen depositing source and a silicon depositing source on a substrate heated at 500.degree.-1,900.degree. C. with a blowpipe composed of a pipe assembly wherein a first pipe for the nitrogen depositing source is surrounded with a second pipe for the silicon depositing source and the distance from an opening end of the first pipe to the substrate is shorter than the distance from an opening end of the second pipe to the substrate.

Abstract: A process for the reduction of the particle size of coarse grain, crystalline zeolitic sodium aluminosilicate of the NaA type obtained in an aqueous alkaline suspension by crystallization of a reaction mixture suspension formed from sodium aluminate solution and sodium silicate solution, said sodium aluminosilicate having a large cation exchange capacity consisting essentially of subjecting said aqueous alkaline suspension of the crystallized sodium aluminosilicate to treatment on a vibrating screen having a substantially uniform mesh size between 25 to 100 .mu.m, the number of vibrations per minute and the amplitude of oscillation of said screen being so selected that at least 99.95 percent by weight, based on the anhydrous weight, of sodium aluminosilicate particles recovered have a particle size of less than 100 .mu.m, the said aqueous alkaline suspension of the crystallized sodium aluminosilicate having a molar ratio of 2.5-5 Na.sub.2 O:1 Al.sub.2 O.sub.3 :1.8 to 2 SiO.sub.2 :50-100 H.sub.2 O.

Abstract: A process for smoothing surfaces of crystalline materials such as sapphire or the like is disclosed which is capable of producing surfaces which are near atomically smooth. The process comprises the steps of substantially atomically removing crystalline material from the surface to be smoothed at a given rate and simultaneously substantially atomically depositing crystalline material on the surface to be smoothed at an independently controlled rate not greater than the given rate of removal. Various embodiments of the process are described in which combinations of evaporation, sputtering, gaseous chemical reaction and reflection of removed material are used to provide the substantially atomic removal and deposition of materials according to this invention.

Abstract: A single crystal of ferrite is grown toward a polycrystal of ferrite by heating a polycrystal of ferrite and a seed of single crystal of ferrite in contact with each other to effect a solid phase reaction. In this method, as the polycrystal of ferrite use is made of the specific polycrystal of ferrite prepared by using iron oxide containing iron oxide having spinel structure, iron oxide having hysteresis of spinel structure or mixture of these iron oxides in an amount of not less than 60% by weight calculated as Fe.sub.2 O.sub.3 as the starting material of iron oxide of the main component of polycrystal of ferrite and the heating is effected at a temperature lower than the temperature at which the discontinuous grain growth of the polycrystal of ferrite is caused.