Abstract: A semiconductor device of the present invention includes an insulating film made of a low dielectric constant material having a smaller specific dielectric constant than SiO2, a wiring trench formed in the insulating film, a first barrier film made of SiO2 or SiCO formed at least on the side surface of the wiring trench, Cu wiring mainly composed of Cu embedded in the wiring trench, and a second barrier film made of a compound containing Si, O and a predetermined metallic element covering the surface of the Cu wiring opposed to the wiring trench.

Abstract: A memory device having die-stacking modules that are interchangeable within a Package-on-Package (PoP) and provide separate Chip Enable (CE) signals for all memory die in the die-stacking modules.

Abstract: A mold (10) including a first mold part (12) and a second mold part (14) define a mold cavity (16) therebetween. A gate (18) is formed in at least one of the first and second mold parts (12) and (14) such that the gate (18) communicates with the mold cavity (16). A vent (20) having a constricted portion (22) is arranged to communicate with the mold cavity (16). A substrate (28) including a base substrate (30) and an electrically conductive pattern (32) and (34) formed on the base substrate (30) may be received in the mold (10). A solder resist layer (36) is formed on the base substrate (30) and a portion of the electrically conductive pattern (32). A plurality of grooves (38) and (40) is formed in a staggered arrangement around a periphery of a molding area (42) on the substrate (28).

Abstract: Provided are a power device package, which can be made compact by vertically stacking substrates on which semiconductor chips are mounted, and a method of fabricating the power device package.

Abstract: A method of manufacturing a semiconductor device includes preparing a semiconductor chip having a main surface, forming a conductive portion made from a material having conductivity and malleability on the main surface, arranging the semiconductor chip within a die after the step of forming the conductive portion, the die having an inner surface facing the main surface with a spacing therebetween, and a protruding portion protruding from the inner surface to press the conductive portion, and forming a sealing resin portion having a surface and an opening by filling the die with a resin and then removing the die, the surface facing the main surface, the opening passing through between the conductive portion and the surface.

Abstract: Between a logic LSI (4) arranged on one side of a DRAM (1) and jointed to the DRAM and a radiating member (6) arranged on the other side of the DRAM (1) for irradiating the heats of the DRAM (1) and the logic LSI (4), there is disposed a heat bypass passage (5), which extends inbetween while bypassing the DRAM (1). Thus, it is possible to provide a semiconductor device, which can irradiate the heat generated from the logic LSI such as CPU or GPU thereby to reduce the temperature rise and the temperature distribution.

Abstract: A semiconductor device includes an integrated circuit (IC) die including a substrate, and at least one through substrate via (TSV) that extends through the substrate to a protruding integral tip that includes sidewalls and a distal end. The protruding integral tip has a tip height between 1 and 50 ?m. A metal layer is on the bottom surface of the IC die, and the sidewalls and the distal end of the protruding integral tips. A semiconductor device can include an IC die that includes TSVs and a package substrate such as a lead-frame, where the IC die includes a metal layer and an electrically conductive die attach adhesive layer, such as a solder filled polymer wherein the solder is arranged in an electrically interconnected network, between the metal layer and the die pad of the lead-frame.

Abstract: A system on chip comprising a RF shield is disclosed. In one embodiment, the system on chip includes a RF component disposed on a chip, first redistribution lines disposed above the system on chip, the first redistribution lines coupled to I/O connection nodes. The system on chip further includes second redistribution lines disposed above the RF component, the second redistribution lines coupled to ground potential nodes. The second redistribution lines include a first set of parallel metal lines coupled together by a second set of parallel metal lines.

Abstract: A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by attaching the sensor wafer to a handle wafer using a removable interface layer. Once the sensor wafer is attached to the handle wafer, the sensor wafer is backside thinned to a given thickness. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer.

Abstract: A transistor outline package is provided for a semiconductor integrated device suitable for use in a control module of an automobile for connection between a printed circuit board and a bus bar of such a module. The package includes a package housing, having a first end suitable for mounting to a PCB and which has a width. The package is also formed with a leadframe which includes a heat sink and ground plane blade suitable for connection to a bus bar, a plurality of connector leads suitable for connection to a PCB and at least one source tab lead suitable for connection to a module connector of such a control module. The plurality of connection leads and the source tab lead extend from the first end of the package housing side by side in the direction along and within the width of the first end of the package housing.

Abstract: A bridge stack integrated circuit package-on-package system is provided including forming a first integrated circuit package system having a first substrate, forming a second integrated circuit package system having a second substrate, and mounting a bridge integrated circuit package system on the first substrate and on the second substrate.

Abstract: An interposer has an opening in the central portion. A plurality of first electrode terminals are formed on the front surface near the opening of the interposer, a plurality of second electrode terminals are formed on the front surface of the peripheral portion thereof and corresponding ones of the plurality of first and second electrode terminals are electrically connected to one another via a plurality of wirings. A plurality of bump electrodes is formed on the front surface of a child chip. A plurality of bump electrodes containing a plurality of bump electrodes for connection with the exterior are formed on the front surface of a parent chip. The front surfaces of the parent chip and child chip are set to face each other with the interposer disposed therebetween and the bump electrodes are electrically connected to one another in the opening of the interposer.

Abstract: A system and method for measuring voltage of a medium to high voltage line conductor is disclosed. The system includes an electrical insulator having a surface and an edge, the surface having an opening therein to allow passage of a line conductor therethrough in a direction generally perpendicular to the surface. The system also includes first and second electrodes positioned about the opening on the surface of the electrical insulator and spaced apart from one another to provide a common capacitive divider signal indicative of a voltage potential of the line conductor.

Abstract: A mechanism for continuously referencing signals over multiple layers in laminate packages provides a continuous path for signals from one layer to another while using the ideal voltage reference for all areas of the package and still avoiding discontinuities in the voltage reference. A reference plane adjustment engine analyzes a package design and identifies an ideal top plane for all areas of the package, including areas under particular chip die(s) and areas that are not under a chip die. The reference plane adjustment engine then modifies the package design to reposition ground planes, source voltage planes, signal planes, and vias between layers to maintain a continuous voltage reference regardless of the top layer. The reference plane adjustment engine provides the resulting mixed voltage plane package design to a design analysis engine. A package fabrication system fabricates the package.

Abstract: A dual-face package has an LSI chip sealed with a mold resin, and electrodes for external connections on both of the front face and the back face. The LSI chip is bonded onto the die pad of a leadframe whose outer lead portions are exposed as back-face electrodes at least the back face. The LSI chip and a plurality of inner lead portions of the leadframe are connected by wiring. At least some of the plurality of inner lead portions have front-face electrodes integrally formed by working a portion of the leadframe. Head faces of the front-face electrodes, or bump electrodes connected to the respective head faces of the front-face electrodes serve as electrodes for external connections to another substrate, element, or the like.

Abstract: An ear hook microphone comprises an ear hook, a cable pole, a cable pole receiving device and a cable pole adjusting device. The ear hook comprises an injection position. The cable pole receiving device is fixed in the injection position and comprises an underlying flange. The cable pole adjusting device is fixed in the cable pole receiving device, which includes a fixed block, a pressing block, a button and a plurality of flexible members. The fixed block includes a base plate. A button hole is formed in the middle of the base plate. Two side plates upwardly extend from the two opposite ends of the base plate respectively. Each of the two side plates opens a through hole at the cable pole. The pressing block is placed between the two side plates. The top end of the button inserts through the button hole then connects with the pressing block. The button comprises a bar. The top end of the bar has a perforated hole. An upborne flange protrudes from the lower portion of the bar.

Abstract: A stiffener molded to a semiconductor substrate, such as a lead frame, and methods of molding the stiffener to the substrate are provided. The stiffener is molded to the substrate to provide rigidity and support to the substrate. The stiffener material can comprise a polymeric material molded to the substrate by a molding technique such as transfer molding, injection molding, and spray molding, or using an encapsulating material. One or more dies, chips, or other semiconductor or microelectronic devices can be disposed on the substrate to form a die assembly. The stiffener can be molded to a substrate comprising one or more dies, over which an encapsulating material can be applied to produce a semiconductor die package.

Abstract: In a substrate for a stacking-type semiconductor device including a connection terminal provided for a connection with a semiconductor chip to be stacked and an external terminal connected to the connection terminal through a conductor provided in a substrate, connection terminals of a power supply, a ground and the like, which terminals have an identical node, are electrically continuous with each other. Thus, it is possible to facilitate an inspection of electrical continuity between each connection terminal and an external terminal corresponding to each connection terminal by minimum addition of inspecting terminals. Further, it is possible to improve reliability of a stacking-type semiconductor module.

Abstract: An integrated circuit package system includes: providing a substrate having a top side with a trace conductor connected to a bottom side with a system interconnect; forming a bump ring on the substrate, the bump ring having an inner cavity area over the trace conductor and an outer bump area; applying a substrate mask layer adjacent a perimeter of the outer bump area; connecting a device to the trace conductor below the bump ring; and applying a compound between the device and the substrate.

Abstract: A semiconductor system (200) of one or more semiconductor interposers (201) with a certain dimension (210), conductive vias (212) extending from the first to the second surface, with terminals and attached non-reflow metal studs (215) at the ends of the vias. A semiconducting interposer surface may include discrete electronic components or an integrated circuit. One or more semiconductor chips (202, 203) have a dimension (220, 230) narrower than the interposer dimension, and an active surface with terminals and non-reflow metal studs (224, 234). One chip is flip-attached to the first interposer surface, and another chip to the second interposer surface, so that the interposer dimension projects over the chip dimension. An insulating substrate (204) has terminals and reflow bodies (242) to connect to the studs of the projecting interposer.