Abstract: An integrated circuit includes a set of active regions in a substrate, a first set of conductive structures, a shallow trench isolation (STI) region, a set of gates and a first set of vias. The set of active regions extend in a first direction and is located on a first level. The first set of conductive structures and the STI region extend in at least the first direction or a second direction, is located on the first level, and is between the set of active regions. The STI region is between the set of active regions and the first set of conductive structures. The set of gates extend in the second direction and overlap the first set of conductive structures. The first set of vias couple the first set of conductive structures to the set of gates.

Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.

Abstract: A manufacturing method of a semiconductor package includes the following steps. A chip is provided. The chip has an active surface and a rear surface opposite to the active surface. The chip includes conductive pads disposed at the active surface. A first solder-containing alloy layer is formed on the rear surface of the chip. A second solder-containing alloy layer is formed on a surface and at a location where the chip is to be attached. The chip is mounted to the surface and the first solder-containing alloy layer is aligned with the second solder-containing alloy layer. A reflow step is performed on the first and second solder-containing alloy layers to form a joint alloy layer between the chip and the surface.

Abstract: A semiconductor package includes a first interposer, a second interposer, and a gap between the first interposer and the second interposer. The first interposer and the second interposer are coplanar. A first die is mounted on the first interposer and the second interposer. The first die includes first connection elements connecting the first die to the first interposer or the second interposer. A redistribution layer (RDL) structure is disposed on bottom surfaces of the first and second interposers for connecting the first interposer with the second interposer. The RDL structure includes at least one bridge trace traversing the gap to electrically connect the first interposer with the second interposer.

Abstract: A semiconductor package is provided including a package substrate, a first semiconductor chip on the substrate, with a first surface and a second surface opposite to each other; a plurality of first connection terminals disposed on the first surface contacting an upper surface of the substrate; a second semiconductor chip disposed on the second surface, with a third surface and a fourth surface opposite to each other; a plurality of second connection terminals disposed on the third surface contacting the second surface, wherein an absolute value between a first area, the sum of areas in which the plurality of first connection terminals contact the upper surface of the package substrate, and a second area, the sum of areas in which the plurality of second connection terminals contact the second surface of the first semiconductor chip, is equal to or less than about 0.3 of the first area.

Abstract: A semiconductor package is provided. The semiconductor package includes: a package substrate having a first surface, a second surface that is provided opposite the first surface and has a concave portion, and a through-hole having a side surface that is oblique with respect to the first surface, and a first diameter of a first opening of the through-hole defined through the first surface being less than a second diameter of a second opening of the through-hole defined through a bottom surface of the concave portion; a plurality of first semiconductor chips provided on the first surface; a second semiconductor chip provided on the bottom surface; and a molding portion provided in the through-hole, and covering the plurality of first semiconductor chips and the second semiconductor chip.

Abstract: An alignment carrier, assembly and methods that enable the precise alignment and assembly of two or more semiconductor die using an interconnect bridge. The alignment carrier includes a substrate composed of a material that has a coefficient of thermal expansion that substantially matches that of an interconnect bridge. The alignment carrier further includes a plurality of solder balls located on the substrate and configured for alignment of two or more semiconductor die.

Abstract: A display apparatus includes a substrate having a first area, a second area, and a bending area disposed therebetween. The substrate is bent at the bending area about a bending axis. An inorganic insulating layer is disposed over the substrate and includes an opening or groove corresponding to the bending area. An organic material layer fills the opening or groove. A first conductive layer extends from the first area to the second area through the bending area. The first conductive layer is disposed over the organic material layer and includes a multipath portion having a plurality of through holes. A length of the multipath portion, in a direction from the first area to the second area, is greater than a width of the opening or groove, in the direction from the first area to the second area.

Abstract: While the use of 2.5D/3D packaging technology results in a compact IC package, it also raises challenges with respect to thermal management. Integrated component packages according to the present disclosure provide a thermal management solution for 2.5D/3D IC packages that include a high-power component integrated with multiple lower-power components. The thermal solution provided by the present disclosure includes a mix of passive cooling by traditional heatsink or cold plate and active cooling by thermoelectric cooling (TEC) elements. Certain methods according to the present disclosure include controlling a temperature during normal operation in an IC package that includes a plurality of lower-power components located adjacent to a high-power component in which the high-power component generates a greater amount of heat relative to each of the lower-power components during normal operation.

Abstract: Apparatus and methods may be implemented to provide multi-layer display assembly apparatus for information handling systems, including portable information handling systems (e.g., such as smart phones, tablet computers, notebook computers, etc.) as well as display assembly apparatus for other types of information handling systems such as desktop computers, servers, etc. The disclosed multi-layer display assembly apparatus may be implemented to include multiple adhesive layers (e.g., two or more adhesive layers) that have different indices of refraction and/or different debonding characteristics, and that are disposed between a display substrate and an transparent protective hardcover such as glass-based or plastic-based cover.

Abstract: A bonding pad structure and a method thereof includes: a base metal layer formed on a substrate; first conductive vias arranged in a peripheral region of the base metal layer; an intermediate buffer layer formed above the base metal layer, the intermediate buffer layer spaced from and aligned with the base metal layer, the first conductive vias vertically connecting the base metal layer and the intermediate buffer layer; second conductive vias arranged in a peripheral region of the intermediate buffer layer; a surface bonding layer formed above the intermediate buffer layer, the surface bonding layer spaced from and aligned with the intermediate buffer layer, the second conductive vias vertically connecting the intermediate buffer layer and the surface bonding layer, the intermediate buffer layer comprising a mesh structure, and the first conductive vias and the second conductive vias not vertically aligned with a central region of the intermediate buffer layer.

Abstract: Implementations of image sensor packages may include an image sensor chip, a first layer including an opening therethrough coupled to a first side of the image sensor chip, and a optically transmissive cover coupled to the first layer. The optically transmissive cover, the first layer, and the image sensor chip may form a cavity within the image sensor. The image sensor package may also include at least one electrical contact coupled to a second side of the image sensor chip opposing the first side and an encapsulant coating an entirety of the sidewalls of the image sensor package.

Abstract: Implementations of a semiconductor package may include: a substrate, a case coupled to the substrate and a plurality of press-fit pins. The press-fit pins are molded into and fixedly coupled with the case. The pins are also electrically and mechanically coupled to the substrate.

Abstract: A microelectromechanical system (MEMS) semiconductor device has a first and second semiconductor die. A first semiconductor die is embedded within an encapsulant together with a modular interconnect unit. Alternatively, the first semiconductor die is embedded within a substrate. A second semiconductor die, such as a MEMS die, is disposed over the first semiconductor die and electrically connected to the first semiconductor die through an interconnect structure. In another embodiment, the first semiconductor die is flip chip mounted to the substrate, and the second semiconductor die is wire bonded to the substrate adjacent to the first semiconductor die. In another embodiment, first and second semiconductor die are embedded in an encapsulant and are electrically connected through a build-up interconnect structure. A lid is disposed over the semiconductor die. In a MEMS microphone embodiment, the lid, substrate, or interconnect structure includes an opening over a surface of the MEMS die.

Abstract: An electronic module has a first substrate 11; a second substrate 21 provided in one side of the first substrate 11; and a chip module 100 provided between the first substrate 11 and the second substrate 21. The chip module 100 has an electronic element 13, 23 and a connecting body 60, 70, 80 electrically connected to the electronic element 13, 23. The electronic element 13, 23 extends along a first direction that is a thickness direction of the electronic module.

Abstract: The disclosure relates to chips scale packages and methods of forming such packages or an array of such packages. The semiconductor chip scale package comprises: a semiconductor die, comprising: a first major surface opposing a second major surface; a plurality side walls extending between the first major surface and the second major surface; a plurality of electrical contacts arranged on the second major surface of the semiconductor die; and an inorganic insulating material arranged on the plurality of side walls and on the first major surface.

Abstract: In an embodiment, a composite semiconductor substrate includes a first polymer layer and a plurality of semiconductor dies having a first surface, a second surface opposing the first surface, side faces extending between the first surface and the second surface and a first metallization structure on the first surface. Edge regions of the first surface and at least portions of the side faces are embedded in the first polymer layer. At least one metallic region of the first metallization structure is exposed from the first polymer layer. A second metallization structure is arranged on the second surface of the plurality of semiconductor dies. A second polymer layer is arranged on edge regions of the second surface of the plurality of semiconductor dies and on the first polymer layer in regions between the side faces of neighbouring ones of the plurality of semiconductor dies.

Abstract: A method of forming a semiconductor structure includes forming one or more interconnect lines, the one or more interconnect lines including trenches of a first metal material surrounded by a first interlayer dielectric layer. The method also includes forming pillars of a second metal material different than the first metal material over the one or more interconnect lines utilizing a metal on metal growth process, and forming an etch stop dielectric layer, the pillars of the second metal material shaping the etch stop dielectric layer. The method further includes forming one or more vias to the one or more interconnect lines, the one or more vias being fully aligned to the one or more interconnect lines using the etch stop dielectric layer.

Abstract: The present application provides a semiconductor package with air gaps for reducing capacitive coupling between conductive features and a method for manufacturing the semiconductor package. The semiconductor package includes a first semiconductor structure and a second semiconductor structure bonded with the first semiconductor structure. The first semiconductor structure has a first bonding surface. The second semiconductor structure has a second bonding surface partially in contact with the first bonding surface. A portion of the first bonding surface is separated from a portion of the second bonding surface, a space between the portions of the first and second bonding surfaces is sealed and forms an air gap in the semiconductor package.

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.