Abstract: An object is to enable a change in a frequency for which an electric signal based on an optical signal is measured by a spectrum analyzer. An optical measurement device includes a first photoconductive switch that receives predetermined pulse light from a first laser light source, and outputs terahertz light having the same repetition frequency as the repetition frequency of the predetermined pulse light. The optical measurement device also includes a second photoconductive switch that receives the terahertz light and a sampling light pulse, and outputs a signal corresponding to a power of the terahertz light at a time point when the sampling light pulse is received.

Abstract: A method and apparatus for in-situ metrology of a workpiece disposed in a vacuum processing chamber. The apparatus may include an optical assembly external to the processing chamber configured to focus a relatively large optical spot over a relatively large working distance to acquire a TE and TM spectra from a periodic array on the workpiece. The workpiece may be disposed in the processing chamber with an arbitrary orientation which is first determined via a reflectance measurement. TE and/or TM spectra may then be acquired by initiating a periodic triggering of a flash lamp based on the determined workpiece orientation to account for variation in placement of the workpiece within the processing chamber. The periodic array from which spectra are collected may be a memory array being fabricated in a semiconductor wafer.

Abstract: A distinguishing size for distinguishing a pseudo defect from a defect caused by a process trouble is stored in a first storage area. Defect data are stored in a second storage area. A processing unit detects a defect on a wafer surface, and stores the defect data in the second storage area. Before a defect detection process is completed for all areas of the wafer surface, a size of a defect detected in a partial area is compared with the distinguishing size stored in the first storage area. If the detected defect has a size equal to or larger than the distinguishing size, an alarm is output through an output unit, whereas if a defect having a size equal to or larger than the distinguishing size is not detected, the defect detection process is executed for the area still not subjected to the defect detection process.

Abstract: The invention encompasses analyzers and analyzer systems that include a single molecule analyzer, methods of using the analyzer and analyzer systems to analyze samples, either for single molecules or for molecular complexes. The single molecule uses electromagnetic radiation that is translated through the sample to detect the presence or absence of a single molecule. The single molecule analyzer provided herein is useful for diagnostics because the analyzer detects single molecules with zero carryover between samples.

Abstract: The invention relates to a system for determining a position by emitting a first laser beam (7) by a laser source (6) positioned in a reference system onto a detector (1) and simultaneously detecting the first laser beam (7) by the detector (1), thus defining an emission direction of the laser source (7). The detector (1) has a segmented detection area comprising a plurality of discrete partial detection areas (17), each having a defined partial detection direction and at least two partial detection directions thereof being different. When detecting the first laser beam (7), an impingement point (9) of the first laser beam (7) on the detector (1) is detected by means of at least one partial detection area (17), and when determining the incidence direction (10), said direction is derived from the at least one partial detection direction. The location of the detector (1) relative to the laser source (6) and the reference system is then determined using the emission direction and the incidence direction (10).

Abstract: A device for handling a substantially circular wafer is provided. The device includes an interior accessible through a plurality of entrances, and a plurality of sensors consisting of two sensors for each one of the plurality of entrances, each sensor capable of detecting a presence of the substantially circular wafer, at a predetermined location within the interior, wherein the plurality of sensors are arranged so that at least two of the plurality of sensors detect the wafer for any position of the wafer entirely within the interior, wherein a first one of the two sensors is positioned to detect the wafer when the wafer has passed entirely into the interior through one of the plurality of entrances, and a second one of the two sensors is positioned immediately outside a diameter of the wafer when the wafer has passed entirely into the interior through one of the plurality of entrances.

Abstract: A method for measuring the roundness profiles moved forward in longitudinal direction inside a rolling mill, using two laser scanners, respectively provided with a light-sensitive sensor and a laser. At least three shadow edges that fit against the round profile to be measured and enclose the round profile to form a polygon are generated and measured and the corresponding tangents are computed.

Abstract: A semiconductor wafer may include a dummy field configured to enable overlay measurements. The enhanced dummy field may include a plurality of encoding blocs that enable OVL measurements to be made throughout the enhanced dummy field.

Abstract: Disclosed are methods and systems for dynamic feature detection of physical features of objects in the field of view of a sensor. Dynamic feature detection substantially reduces the effects of accidental alignment of physical features with the pixel grid of a digital image by using the relative motion of objects or material in and/or through the field of view to capture and process a plurality of images that correspond to a plurality of alignments. Estimates of the position, weight, and other attributes of a feature are based on an analysis of the appearance of the feature as it moves in the field of view and appears at a plurality of pixel grid alignments. The resulting reliability and accuracy is superior to prior art static feature detection systems and methods.

Abstract: Provided is a measurement device. The measurement device includes a sensor, a wavelength-tunable light source, an additional light source, a coupler, and an optical power measurer. The sensor accepts a sample. The wavelength-tunable light source irradiates wavelength-tunable light to detect a reaction of the sensor. The additional light source irradiates wavelength-fixed light to detect an initial time of the reaction. The coupler combines the wavelength-tunable light source and the additional light source and irradiates the combined input light on the sensor. The optical power measurer detects the reaction of the sensor from an output light transmitted through or reflected by the sensor.

Abstract: The invention relates to a method of characterizing a scattering medium. According to the invention, the processing on the electromagnetic radiation scattered by the scattering medium is carried out for an unpolarized signal. In this way, only the anisotrophic incoherent transport of radiation induced by the scattering medium is obtained in the characterization according to the invention. According to the invention, the data representative of the angular variation of the first image representing the unpolarized scattered radiation is representative of the purely isotrophic part of the scattering. Having obtained this purely isotrophic part, it is then possible, according to the invention, to calculate a second image representative of the non-isotrophic part of the scattering. This non-isotrophic part represents the anisotrophic transport of radiation induced by the medium at the moment of scattering.

Abstract: A system and method provide a dual beam chromatic point sensor (CPS) system operable to simultaneously measure two surface regions. In one embodiment, a single beam CPS optical pen may have a dual beam assembly attached. First and second measurement beams of the system may be positioned on respective first and second surface regions, and both reflect light through a confocal aperture of the dual beam CPS. At least one set of measurements is determined, comprising a first and second measurement arising from the first and second measurement beams, respectively. At least the first surface region may be moved to acquire sets of measurements at various positions. Each measurement may be determined with extremely fine resolution (e.g., at least as fine as 10 nm). The system and method satisfy applications that require such resolution and accuracy without the use of an interferometer or other costly and complex elements.

Abstract: The present disclosure provides systems and methods for sorting seeds based on identified phenotypes of the seeds. In various embodiments, the system includes an optics and controller station structured and operable to collect image data of a top portion, a bottom portion and a plurality of side portions of each respective seed in a set of seeds, and to analyze the collected image data to determine whether each seed exhibits a desired phenotype. The system further includes a seed loading, transporting and sorting station structured and operable to singulate each seed of the set of seeds from a plurality of seeds in a bulk seed hopper, transport the set of seeds to the optics and controller station, and selectively sort each seed to a respective one of a plurality of seed repositories based on whether each respective seed exhibits the desired phenotype.

Abstract: One embodiment of the present invention provides techniques and systems for determining modeling parameters for a photolithography process. During operation, the system can receive a layout. Next, the system can determine an iso-focal pattern in the layout. The system can then determine multiple aerial-image-intensity values in proximity to the iso-focal pattern by convolving the layout with multiple optical models, wherein the multiple optical models model the photolithography process's optical system under different focus conditions. Next, the system can determine a location in proximity to the iso-focal pattern where the aerial-image-intensity values are substantially insensitive to focus variations. The system can then use the location and the associated aerial-image-intensity values to determine an optical threshold and a resist bias. The optical threshold and the resist bias can then be used for modeling the photolithography process.

Abstract: A method and apparatus are set forth for monitoring lamp condition, comprising directing a beam of light at the lamp, detecting percent transmission of the beam through the lamp, wherein the percent transmission is indicative of lamp blackening, and repeating the directing and detecting of the beam of light periodically to provide an indication of lamp blackening over time, wherein the lamp blackening thereby provides an indication of lamp condition over time.

Abstract: A system for calibrating a spectrometer includes wide field-of-view (WFOV) optics providing a first light path to a WFOV spectrometer, and narrow field-of-view (NFOV) optics providing a second light path to a NFOV spectrometer. A de-focusing optic is selectively positioned in the first or second light paths. A scan controller selectively controls the WFOV or NFOV optics to scan a celestial body. A processor is configured to calibrate the de-focusing optic, while the WFOV optics scan the celestial body. First, the WFOV optics scan the celestial body without the de-focusing optic positioned in the first light path. Second, the WFOV optics scan the celestial body with the de-focusing optic positioned in the first light path. Next, the processor calibrates the NFOV spectrometer, while the NFOV optics and the de-focusing optic scan the celestial body. After the NFOV spectrometer is calibrated, the NFOV spectrometer may be used to measure the albedo of the earth.

Abstract: An optical sensor (10) for fitting to a washing machine or dishwasher is proposed, comprising: a housing (16), an arrangement, which is housed in the housing, of optical components, the optical components comprising a controllable light emitter (26) and a first and a second light receiver (28, 30), and an electronic analysis and control unit (36) which is connected to the light emitter (26) and the two light receivers (28, 30), the first light receiver (28) being arranged at the end of a first light measurement path (54) which starts at the light emitter (26) and runs on a portion outside the housing (16), and the second light receiver (30) being arranged at the end of a second light measurement path (56) which starts at the light emitter (26), and when the sensor is fitted to the machine as specified, the first light measurement path running on a portion through a washing space (14) of the machine, and is the second light measurement path running completely outside this washing space, the analysis and contro

Abstract: A method for calibrating an apparatus for ellipsometric measurements performed on an arbitrarily large or continuously moving sample, using a visible sample reference frame, and one or more laser sources in order to calibrate the ellipsometer for variations in the distance between the ellipsometer apparatus and the sample of interest. Included are techniques for projecting a first laser beam spot from an incident laser source onto a sample, then analyzing the position of the first laser beam spot relative to the center of the sample reference frame using human-aided measurements and confirmations and/or computer vision techniques. Then adjusting pivot points and/or apparatus-to-sample distance to achieve a first beam spot being located about the center of the sample reference frame, and concurrently intersecting the plane of the sample. Other techniques include changing the incidence and reflectance angle using a semi-circular track arc design with a stepping motor activating each goniometer arm.

Abstract: In some embodiments, an inspection system for measuring at least a portion of the threaded surface of an internally threaded component includes at least one measuring probe, a component retention device that allows positioning of the internally threaded component relative to the measuring probe and a processing device in signal communication with the measuring probe to receive threaded surface data therefrom.

Abstract: An alignment mark arrangement includes: a first alignment pattern comprising a plurality of parallel first stripes on a substrate, wherein each of the first stripes includes a first dimension; and a second alignment pattern positioned directly above and overlapping with the first alignment pattern, the second alignment pattern including a plurality of parallel second stripes, wherein each of the second stripes of the second alignment pattern has a second dimension that is larger than the first dimension of each of the first stripes of the first alignment pattern.