Abstract: A light-emitting device includes a lead frame, a light-emitting diode (LED) chip, and an encapsulant. The LED chip is disposed on the lead frame, and includes a substrate, a semiconductor light-emitting unit disposed on a surface of the substrate, and a first electrode and a second electrode, which are disposed on the surface of the substrate, and which are located outwardly of the semiconductor light-emitting unit. The first and second electrodes are electrically connected to a lower surface of the semiconductor light-emitting unit, and are respectively connected to a first wiring bonding region and a second wiring bonding region on the lead frame. The encapsulant encapsulates the LED chip on the lead frame.

Abstract: In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including alignment marks; measuring a position of the wafer by measuring positions of the alignment marks with one or more cameras; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

Abstract: The present invention relates to a method of manufacturing an AlN-based transistor. An AlN-based high electron mobility transistor (HEMT) element according to the present invention may use an AlN buffer layer, and include an AlGaN composition change layer inserted into a GaN/AlN interface to remove or suppress a degree of generation of a two-dimensional hole gas (2DHG), thereby decreasing an influence of a coulomb drag on a two-dimensional electron gas (2DEG) layer and improving mobility of a two-dimensional electron gas (2DEG).

Abstract: A display device, including a flexible substrate, multiple lighting units, and multiple signal lines, is provided. The lighting units and the signal lines are located on the flexible substrate, and the signal lines are respectively electrically connected to the lighting units. Each signal line includes multiple first conductive patterns, at least one second conductive pattern, and at least one third conductive pattern. The first conductive patterns are located on the flexible substrate. The second conductive pattern is located on the first conductive patterns, and two ends of each second conductive pattern are respectively connected to two first conductive patterns. In a stretched state, the two first conductive patterns twist the commonly connected second conductive pattern. The third conductive pattern is superimposed on the second conductive pattern.

Abstract: A method for manufacturing a microelectromechanical structure. The method includes: forming a first and a second functional layer including recesses, a third functional layer, and three insulating layers situated therebetween, a structured lateral area of the third functional layer defining a movable structure, the insulating layers and the first and second functional layers each including a lateral area situated beneath the structured lateral area of the third functional layer and corresponding to a perpendicular projection of the structured lateral area; etching the insulating layers to remove the lateral area of the third insulating layer, and expose the movable structure, all recesses of the first functional layer situated in the lateral area of the first functional layer being formed by narrow trenches, the first functional layer being formed to include an electrically insulated segment in the lateral area which is separated from the remainder of the first functional layer by trenches.

Abstract: The present disclosure relates to methods of processing a semiconductor substrate in a processing chamber, such as a chemical vapor deposition chamber. The chemical vapor deposition chamber includes a spindle mechanism that cooperates with one or more carrier ring forks to move the semiconductor substrate from one station to another station. The methods include monitoring one or more spindle operation parameters and carrying out one or more maintenance steps on the spindle mechanism based on the results of monitoring the one or more spindle operation parameters. The monitored spindle operation parameters provide an indication of undesirable vibration of the semiconductor substrates in the processing chamber. The vibration of the semiconductor substrates in the processing chamber is undesirable because it promotes generation of unwanted particles that deposit onto a surface of the semiconductor substrate.

Abstract: The present disclosure relates to reducing the size of a solid-state imaging apparatus. The solid-state imaging apparatus is configured by laminating a first structure body, comprising a pixel array unit in which pixels for performing photoelectric conversion are two-dimensionally aligned, and a second structure body, comprising an output circuit unit for outputting a pixel signal. The output circuit unit, including a through via which penetrates a semiconductor substrate constituting a part of the second structure body, and a signal output external terminal connected to the outside of the apparatus are arranged under the first structure body, the output circuit unit is connected to the signal output external terminal via the through via, and the outermost surface of the apparatus is a resin layer formed on an upper layer of an on-chip lens of the pixel array unit.

Abstract: The present disclosure provides an array substrate and a method of manufacturing the same and a display panel, which belongs to the field of display technologies. The method of manufacturing the array substrate comprises: providing a base substrate; forming a drive circuit layer on the base substrate, wherein the drive circuit layer includes a switching transistor; forming an insulating material layer on one side of the drive circuit layer distal to the base substrate, wherein the insulating material layer has a connection via-hole exposing at least a part region of a drain electrode of the switching transistor; and forming an electrode layer on one side of the insulating material layer distal to the base substrate, wherein a surface of the electrode layer distal to the base substrate has groove structures extending to the connection via-hole. The manufacturing method may avoid the occurrence of poor coating in forming an orientation layer.

Abstract: A flexible substrate has at least one bendable region. The flexible substrate includes a flexible base, a first electrode layer disposed on the base, a first insulating layer disposed on a side of the first electrode layer away from the base, and a second electrode layer disposed on a side of the first insulating layer away from the base. The first electrode layer includes at least one first detection electrode, and the second electrode layer includes at least one second detection electrode. An orthogonal projection of a first detection electrode on the base overlaps at least partially with an orthogonal projection of a second detection electrode on the base. A region where orthogonal projections of the first detection electrode and the second detection electrode on the base are located overlaps with a bendable region.

Abstract: A display apparatus includes a substrate, a first insulating layer on the substrate, first metal layers on the first insulating layer and having a compressive stress or a tensile stress of about 100 megapascals (MPa) or less, and a second insulating layer including a first layer covering the first metal layers and a second layer including a material different from a material of the first layer.

Abstract: The present disclosure is related to a flexible display panel. The flexible display panel may include a flexible base substrate. The flexible base substrate may include a bendable region. The flexible display panel may further include a first layer on the flexible base substrate; a trench penetrating at least part of the first layer; a second layer in the trench; and a metal layer on the second layer. The second layer may have a smaller elastic modulus than the first layer. At least part of the second layer and the metal layer may be conformal with the bendable region during bending of the bendable region.

Abstract: A mask for forming a trench in a flexible bendable region of a flexible display panel is provided. The mask includes a first region, a second region, and a third region sandwiched between the first and second regions in a first direction, and the third region has the same pattern as a pattern of a trench to be formed. Light transmission properties of the first and second regions are the same as each other, but are opposite to a light transmission property of the third region. An edge of at least one of the first and second regions proximal to the third region has a plurality of protrusions, and each of the plurality of protrusions has a vertex angle that is at a side proximal to the third region and is not more than 90°. A flexible display panel and a manufacturing method thereof are further provided.

Abstract: Organic light-emitting display substrates and methods of preparing the same, and organic light-emitting display apparatuses are provided. An organic light-emitting display substrate includes a display area and opening areas in the display area.

Abstract: A display device according to an exemplary embodiment includes: a substrate including a display area and a transmission area; a metal blocking layer disposed in the display area of the substrate; an inorganic insulating layer disposed on the metal blocking film; a transistor disposed on the inorganic insulating layer; an emission layer connected to the transistor; and a light blocking layer and a color filter disposed on the emission layer of the display area, wherein the edge of the light blocking layer is protruded toward the transmission area more than the edge of the metal blocking layer.

Abstract: Provided are a light-emitting diode structure and a light-emitting diode manufacturing method. The light-emitting diode manufacturing method comprises the operations of: preparing a lower substrate, which includes a substrate and a separation layer formed on the substrate, and preparing at least one semiconductor rod, which is formed on the separation layer, forming a rod structure, which includes a rod protecting layer formed on the separation layer to surround the at least one semiconductor rod and an auxiliary layer formed on at least part of the rod protecting layer and separating the rod structure from the lower substrate by removing the separation layer, and separating the at least one semiconductor rod from the rod structure.

Abstract: This disclosure provides an array substrate and a display device. In the array substrate, the pixel driving circuit includes a driving transistor, a first transistor and a second transistor. The driving transistor and the first transistor are P-type transistors, and the second transistor is N-type transistor. The array substrate also includes a base substrate, and a first conductive layer arranged at a side of the base substrate and including: a first conductive portion forming a gate electrode of the driving transistor; a first gate line at a side of the first conductive portion, a part of the first gate line being configured to form a gate electrode of the first transistor; and a second gate line at a side of the first gate line away from the first conductive portion, a part of the second gate line being configured to form a first gate electrode of the second transistor.

Abstract: A display device and a method of manufacturing the same are provided. The display device, comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, at least one transistor disposed on the second base substrate, and an organic light emitting diode disposed on the at least one transistor, wherein the first barrier layer includes a silicon oxide, and has an adhesion force of 200 gf/inch or more to the second base substrate.

Abstract: An embodiment of the invention may include a semiconductor structure, method of use and method of manufacture. The structure may include a heating element located underneath a temperature-controlled portion of the device. A method of operating the semiconductor device may include providing current to a thin film heater located beneath a temperature-controlled region of the semiconductor device. The method may include performing temperature dependent operations in the temperature-controlled region.

Abstract: Provided is a semiconductor device that includes a drift region that is of a first conductivity type and is provided in a semiconductor substrate; a base region that is of a second conductivity type and is provided above the drift region; an accumulation region that is of the first conductivity type provided between the base region and the drift region; and an electric field relaxation region that is provided between the base region and the accumulation region, wherein the boundary between the electric field relaxation region and the accumulation region is a location for a half-value for the peak of the doping concentration of the accumulation region, and an integrated concentration of the electric field relaxation region is greater than or equal to 5E14 cm?2 and less than or equal to 5E15 cm?2.

Abstract: A semiconductor device and manufacturing method thereof. Various aspects of the disclosure may, for example, comprise forming a back end of line layer on a dummy substrate, completing at least a first portion of an assembly, and removing the dummy substrate.