Abstract: Provided is a mother substrate comprising a glass substrate including a plurality of cutting lines, an organic film overlapping the plurality of cutting lines on the glass substrate, and a plurality of cells spaced apart from each other with each of the plurality of cutting lines therebetween on the glass substrate.

Abstract: A display substrate has a display area, an opening area and an isolation area located between the display area and the opening area and surrounding the opening area, and the display area is disposed at least partially around the opening area. The display substrate includes a flexible base having a via hole located in the opening area. The flexible base includes an amorphous silicon layer. The amorphous silicon layer includes a first portion located in the isolation area and a second portion located in the display area, and a thickness of the first portion is greater than a thickness of the second portion.

Abstract: A flexible display panel includes a glass substrate, a circuit layer disposed on the glass substrate and configured to drive a pixel, a light-emitting element layer disposed on the circuit layer, an encapsulation layer which covers the circuit layer and the light-emitting element layer, a polarizing plate disposed on the encapsulation layer, and a cover glass disposed on the polarizing plate, at least one of the glass substrate and the cover glass includes a buffer portion, the buffer portion includes an organic filler and glass, the glass of the buffer portion has a thickness less than or equal to a thickness of the glass substrate and includes a pattern of a specific shape, thus, rigidity of a folding portion in which the buffer portion is located can be increased due to the glass in the buffer portion.

Abstract: A display device includes a substrate and a transistor disposed on the substrate and including a semiconductor layer, wherein the semiconductor layer includes a mesh structure, and wherein a plurality of openings are formed in the semiconductor layer.

Abstract: The present invention is about display technology. A display panel and a display device are provided. The display panel includes: a substrate layer; a data line arranged on the substrate layer; a color resist layer which is arranged on the substrate layer and located at two sides of the data line, and includes grooves which are located at least at one side of the data line; a shielding layer arranged on the color resist layer and arranged over the data line; a pixel electrode layer arranged over the shielding layer; and a passivation layer arranged between the shielding layer and the pixel electrode layer and covering the shielding layer and the color resist layer.

Abstract: A light-emitting diode includes a substrate, a distributed Bragg reflector (DBR) structure and a semiconductor layered structure. The DBR structure is disposed on the substrate. The semiconductor layered structure is disposed on the DBR structure opposite to the substrate, and is configured to emit a light having a first wavelength. The DBR structure has a reflectance of not greater than 30% for the light having the first wavelength, and a reflectance of not smaller than 50% for a laser beam having a second wavelength that is different from the first wavelength.

Abstract: A method for manufacturing an electronic device is provided by the disclosure. A flexible substrate is provided, in which the flexible substrate has two surfaces opposite to each other. A circuit is formed on one of the surfaces of the flexible substrate. A through hole is formed in the flexible substrate. A conductive bridge is formed in the through hole. A supporting substrate is attached to the other surface of the flexible substrate. An opening penetrating the supporting substrate is formed, and the opening corresponds to the through hole in the flexible substrate. An electronic component is mounted on the supporting substrate, and the electronic component is allowed to be electrically connected to the circuit through the conductive bridge.

Abstract: A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.

Abstract: The present disclosure provides a flexible display substrate, a method for preparing the same and a display device. The flexible display substrate includes a flexible substrate and a display function layer, the display function layer including a first metal layer and a second metal layer; the flexible display substrate includes a display area and a peripheral area, and the peripheral area including a bending area, a first wiring area located between the display area and the bending area, and a second wiring area located on a surface of the bending area away from the display area; the signal wiring of the first wiring area and the second signal wiring of the second wiring area being electrically connected through the signal connection line of the bending area, and the signal connection line being made of the first metal layer and/or the second metal layer.

Abstract: A semiconductor processing adhesive tape that includes a substrate, a buffer layer which is provided on at least one side of the substrate, and an adhesive layer which is provided on the other side of the substrate, wherein the buffer layer has an energy to break at 23° C. of 13 to 80 MJ/m3.

Abstract: A method includes depositing a first dielectric layer over a first conductive feature, depositing a first mask layer over the first dielectric layer, and depositing a second mask layer over the first mask layer. A first opening is patterned in the first mask layer and the second mask layer, the first opening having a first width. A second opening is patterned in a bottom surface of the first opening, the second opening extending into the first dielectric layer, the second opening having a second width. The second width is less than the first width. The first opening is extended into the first dielectric layer and the second opening is extended through the first dielectric layer to expose a top surface of the first conductive feature.

Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.

Abstract: There is set forth herein an optoelectrical device, comprising: a substrate; an interposer dielectric stack formed on the substrate, the interposer dielectric stack including a base interposer dielectric stack, a photonics device dielectric stack, and a bond layer that integrally bonds the photonics device dielectric stack to the base interposer dielectric stack. There is set forth herein a method comprising building an interposer base structure on a first wafer having a first substrate, including fabricating a plurality of through vias in the first substrate and fabricating within an interposer base dielectric stack formed on the first substrate one or more metallization layers; and building a photonics structure on a second wafer having a second substrate, including fabricating one or more photonics devices within a photonics device dielectric stack formed on the second substrate.

Abstract: A display panel includes a peripheral region adjacent to a display region. The display region includes a hole peripheral region, and a recessed region is overlapped with the hole peripheral region. The display panel also includes a barrier layer with a penetrating opening overlapped with the recessed region, a circuit layer on the barrier layer and including a transistor and insulating layers, and a device layer including an organic light emitting area coupled to the circuit layer. In addition, a module hole is overlapped with the hole peripheral region and penetrates the base substrate, and a first groove is overlapped with the hole peripheral region and corresponds to a portion of the base substrate that is recessed from a top surface of the barrier layer and that encloses the module hole. The insulating layers include inorganic layers and an organic layer having side portions enclosing the module hole.

Abstract: A display device and a manufacturing method thereof are provided. The display device includes a flexible panel and a protective film. The flexible panel includes a first panel part, a second panel part, and a bendable part connected between the first panel part and the second panel part. The protective film is bonded to a surface on a non-display side of the flexible panel, and includes a first film part bonded to the first panel part and a second film part bonded to the second panel part. The flexible panel is bent at the bendable part so that the first panel part and the second panel part are overlapped in a first direction perpendicular to the surface.

Abstract: A pixel driving circuit and a display panel are provided. The pixel driving circuit includes a control unit to output a control signal by detecting a voltage difference between two opposite ends of a sampling resistor, and to turn on a fourth switch by the control signal. When the fourth switch is turned on, a second positive voltage received by the pixel driving circuit charges a second node to further speed up a voltage pulling up of the second node to improve a detecting speed of the pixel driving circuit.

Abstract: A display panel includes a substrate including a display area and a peripheral area around the display area, the display area including a front display area, a corner display area extending from a corner of the front display area, and a middle display area between the front display area and the corner display area, a pixel arranged on the front display area and including a display element, a gate driving circuit arranged on a side of the peripheral area, a data driving circuit arranged on the side on which the gate driving circuit is arranged, a gate line connected to the gate driving circuit and extending to be connected to the pixel, and a data line connected to the data driving circuit and extending to be connected to the pixel.

Abstract: An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.

Abstract: A display panel and a manufacturing method thereof are provided. The display panel includes a substrate, a barrier layer, a buffer layer, and a thin-film transistor (TFT) array layer. A plurality of first through-holes arranged apart from each other are defined in a display area, a plurality of second through-holes are defined in a bonding area, and the first through-holes and the second through-holes penetrate from an insulating layer to a side of the substrate near the barrier layer. The first through-holes and the second through-holes are filled with a flexible material, thereby improving bending resistance capability of the display panel, and reducing risks of cracking.

Abstract: A display device including a display panel having a folding area and a bending area, a support member disposed on a bottom surface of the display panel and including a plurality of openings formed in the folding area, an elastic member disposed on a bottom surface of the support member and overlapping the openings in the folding area, and a first adhesive member disposed between the support member and the elastic member.